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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF30N60E-GE3

Name: SIHF30N60E-GE3
Brand: Vishay Siliconix
SKU: SIHF30N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF30N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF30N60E-GE3.pdf

Description:: MOSFET N-CH 600V 29A TO220

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Product details

Overview

SIHF30N60E-GE3 from Vishay Siliconix is a 600 V, 29 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 130 nC max, and avalanche-rated (E_AS = 690 mJ), designed for high-efficiency switch-mode power supplies and PFC stages.

For engineers reviewing the SIHF30N60E-GE3 datasheet, SIHF30N60E-GE3 pinout, SIHF30N60E-GE3 application, or SIHF30N60E-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), ultra-low gate charge, robust UIS capability, and thermal performance with R_thJC = 3.4 °C/W - critical for high-power density industrial and telecom power designs.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage switching with fast turn-on/turn-off dynamics: t_d(on) = 40 ns max, t_r = 65 ns max, t_d(off) = 95 ns max, and t_f = 75 ns max under V_DD = 380 V, I_D = 15 A, R_g = 4.7 Ω conditions. Its body diode exhibits t_rr = 605 ns max and Q_rr = 15 μC max, enabling reliable operation in hard-switched and resonant topologies.

The device integrates an intrinsic fast-recovery body diode rated for continuous source-drain current up to 29 A (T_C = 25 °C) and pulsed current up to 65 A, with V_SD = 1.3 V max at I_S = 15 A, T_J = 25 °C. Gate threshold voltage is tightly specified at 2.0–4.0 V, supporting stable drive with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified systems with ≥20 % margin for surge and ringing
R_DS(on) max @ 10 V	0.125 Ω - enables <1.8 W conduction loss at 15 A DC, critical for thermal management in compact SMPS
Q_g max	130 nC - reduces gate driver power demand and switching losses in high-frequency (>100 kHz) PFC designs
E_AS	690 mJ - ensures ruggedness against unclamped inductive switching events without external snubbers
R_thJC	3.4 °C/W - allows >30 W dissipation with modest heatsinking, supporting high-power-density server PSU modules
I_D cont @ T_C = 100 °C	18 A - defines usable current headroom in thermally constrained enclosures with forced air cooling
C_iss	2600 pF typ - impacts Miller effect and gate drive stability; low C_iss/C_oss ratio improves dv/dt immunity

Pinout & Package

TO-220 FULLPAK package with exposed drain tab (electrically connected to Drain), 3-pin through-hole mounting, and industry-standard footprint (D = 15.87 mm, E = 10.10 mm, L = 13.10 mm). Thermal path optimized via direct copper die attach to metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires ≤130 nC charge for full enhancement; sensitive to ESD (±30 V rating)
D (Drain)	High-side power terminal	Connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential
S (Source)	Power return and reference node	Serves as local ground for gate drive loop; low-inductance layout essential to minimize switching oscillation

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	16.25 Ω·nC - directly reduces total switching + conduction loss in high-frequency converters
Avalanche energy rating (UIS)	690 mJ - eliminates need for external clamping circuits in flyback and LLC primary switches
Ultra-low gate charge (Q_g)	130 nC max - lowers gate driver IC stress and enables use of cost-effective 1-A drivers
Fast body diode recovery	t_rr = 605 ns max, Q_rr = 15 μC - minimizes reverse recovery losses and EMI in bridge-leg configurations
High dV/dt immunity	70 V/ns - suppresses false turn-on during high-slew-rate switching transients in high-side applications

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 1–3 kW redundant AC/DC front-end modules with active PFC and LLC resonant conversion. IC Role / Device Role / Timing Role: High-voltage power switch in boost PFC stage and LLC half-bridge primary, operating at 65–150 kHz. Use Value: Low Q_g and R_DS(on) reduce system losses by ~3.2 W per device vs. legacy 600 V MOSFETs, improving efficiency from 95.2 % to 95.8 % at full load.	Use Scenario: 48 V output rectification and isolation in -48 V telecom power systems with distributed architecture. IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch in dual-active-bridge (DAB) isolated DC/DC converters. Use Value: Robust UIS rating withstands bus transients up to 700 V, eliminating failure risk during hot-swap events in central office environments.
Industrial Motor Drives	Solar PV Inverters
Use Scenario: Inverter leg switching in 3–7.5 kW variable frequency drives for HVAC and pump control. IC Role / Device Role / Timing Role: IGBT replacement in 6–12 kHz PWM inverters, leveraging fast switching and low conduction loss. Use Value: R_thJC = 3.4 °C/W enables 29 A continuous operation with passive heatsinking, reducing thermal subsystem cost by 18 %.	Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) topology operating at 16 kHz. Use Value: Body diode Q_rr = 15 μC minimizes shoot-through risk during level transitions, improving reliability over 10-year field life.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 1–3 kW redundant AC/DC front-end modules with active PFC and LLC resonant conversion.

IC Role / Device Role / Timing Role: High-voltage power switch in boost PFC stage and LLC half-bridge primary, operating at 65–150 kHz.

Use Value: Low Q_g and R_DS(on) reduce system losses by ~3.2 W per device vs. legacy 600 V MOSFETs, improving efficiency from 95.2 % to 95.8 % at full load.

Use Scenario: 48 V output rectification and isolation in -48 V telecom power systems with distributed architecture.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch in dual-active-bridge (DAB) isolated DC/DC converters.

Use Value: Robust UIS rating withstands bus transients up to 700 V, eliminating failure risk during hot-swap events in central office environments.

Industrial Motor Drives

Solar PV Inverters

Use Scenario: Inverter leg switching in 3–7.5 kW variable frequency drives for HVAC and pump control.

IC Role / Device Role / Timing Role: IGBT replacement in 6–12 kHz PWM inverters, leveraging fast switching and low conduction loss.

Use Value: R_thJC = 3.4 °C/W enables 29 A continuous operation with passive heatsinking, reducing thermal subsystem cost by 18 %.

Use Scenario: DC link switching in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) topology operating at 16 kHz.

Use Value: Body diode Q_rr = 15 μC minimizes shoot-through risk during level transitions, improving reliability over 10-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	R_DS(on) = 0.13 Ω, Q_g = 125 nC, TO-247 package, no integrated avalanche rating	Larger footprint; higher R_thJC (0.5 °C/W) but lower C_iss; suitable where board space permits larger package	Prefer when higher peak current handling (I_D = 30 A) and lower gate charge outweigh TO-220 FULLPAK's thermal advantage
IXFH30N60P	R_DS(on) = 0.14 Ω, Q_g = 110 nC, TO-247, avalanche-rated (E_AS = 520 mJ), higher V_GS(th) (3.0–5.0 V)	Requires stronger gate drive due to higher threshold; lower E_AS limits ruggedness in high-energy inductive loads	Choose when faster switching (lower Q_gd) is prioritized over avalanche margin and thermal resistance

Compared with STW30NM60ND and IXFH30N60P, SIHF30N60E-GE3 delivers superior thermal performance (R_thJC = 3.4 °C/W) and highest avalanche energy (690 mJ), making it optimal for space-constrained, high-reliability industrial and telecom power where thermal headroom and transient robustness are critical.

Availability

SIHF30N60E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, industrial motor drives, and solar PV inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for SIHF30N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The SIHF30N60E-GE3 belongs to Vishay's E Series Power MOSFET family, engineered specifically for high-voltage, high-efficiency switch-mode power conversion in demanding industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for SIHF30N60E-GE3 at 100 °C case temperature?

The SIHF30N60E-GE3 supports 18 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects derating from the 29 A rating at 25 °C and is validated under steady-state thermal conditions with proper heatsinking. Designers must verify junction temperature remains ≤150 °C using R_thJC = 3.4 °C/W and actual power dissipation in the SIHF30N60E-GE3 application.

Does SIHF30N60E-GE3 have avalanche capability, and how is it rated?

Yes, SIHF30N60E-GE3 is fully avalanche-rated with single-pulse E_AS = 690 mJ at T_J = 25 °C, tested per JEDEC JESD24-1. This rating applies under defined conditions: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A. The SIHF30N60E-GE3 can safely absorb this energy without parametric shift or failure, enabling robust operation in inductive switching circuits without external clamping.

What is the gate threshold voltage range for SIHF30N60E-GE3, and why does it matter?

The SIHF30N60E-GE3 has a gate threshold voltage (V_GS(th)) range of 2.0–4.0 V at I_D = 250 μA. This tight specification ensures consistent turn-on behavior across temperature and process variation. It allows reliable enhancement with standard 10 V gate drivers while providing sufficient noise margin against spurious turn-on - a critical factor in high-noise industrial environments where the SIHF30N60E-GE3 is commonly deployed.

How does the body diode performance of SIHF30N60E-GE3 compare to standard MOSFETs?

The SIHF30N60E-GE3 features an optimized body diode with t_rr = 402–605 ns and Q_rr = 7–15 μC at T_J = 25 °C, significantly faster than generic 600 V MOSFETs. This reduces reverse recovery losses and EMI in bridge configurations. When used in synchronous rectification or freewheeling paths, the SIHF30N60E-GE3's low V_SD = 1.3 V max also cuts conduction loss - a key advantage over discrete diode solutions in the SIHF30N60E-GE3's target applications.

Is SIHF30N60E-GE3 lead (Pb)-free and halogen-free, and what does the "-GE3" suffix indicate?

Yes, SIHF30N60E-GE3 is both lead-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's Green Standard. The "-GE3" suffix explicitly denotes this environmental compliance and confirms packaging in TO-220 FULLPAK with matte tin-plated leads. This makes SIHF30N60E-GE3 suitable for global commercial and industrial deployments where regulatory conformity is mandatory.

SIHF30N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: -

SIHF30N60E-GE3 FAQ

1.How can I place an order for SIHF30N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF30N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF30N60E-GE3 reliable?

The price and inventory of SIHF30N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF30N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF30N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF30N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF30N60E-GE3?

SIHF30N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF30N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF30N60E-GE3?

For technical support, including SIHF30N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF30N60E-GE3 requirements.

6.How does Aetrix verify that SIHF30N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF30N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF30N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF30N60E-GE3?

All SIHF30N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF30N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF30N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHF30N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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