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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF35N60EF-GE3

Name: SIHF35N60EF-GE3
Brand: Vishay Siliconix
SKU: SIHF35N60EF-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF35N60EF-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF35N60EF-GE3.pdf

Description:: MOSFET N-CH 600V 32A TO220

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Product details

Overview

SIHF35N60EF-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring 84 mΩ R_DS(on) at V_GS = 10 V, 134 nC total gate charge, and fast body diode with 150 ns reverse recovery time. It is engineered for high-efficiency switching in server power supplies, PFC stages, and solar inverters.

For engineers reviewing the SIHF35N60EF-GE3 datasheet, SIHF35N60EF-GE3 pinout, SIHF35N60EF-GE3 application, or SIHF35N60EF-GE3 equivalent, key selection criteria include avalanche-rated ruggedness (298 mJ UIS), low C_iss (2568 pF), and optimized FOM (R_DS(on) × Q_g) for reduced conduction and switching losses in hard-switched topologies.

Technical Context

This MOSFET employs planar high-voltage silicon technology with an integrated ultra-fast body diode, enabling reliable operation under repetitive unclamped inductive switching (UIS) stress. Its gate threshold voltage (2.0–4.0 V) and low input capacitance support stable drive in high-frequency SMPS designs up to 100 kHz.

The device uses a single-die configuration with drain-connected tab for low thermal resistance (R_thJC = 3.2 °C/W), and its TO-220 FULLPAK package integrates a copper-exposed drain pad for enhanced heatsinking-critical for continuous 32 A operation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - Supports 480 V DC bus operation with 25 % margin in PFC and PV inverter DC-link stages
R_DS(on) typ @ 10 V	0.084 Ω - Enables ≤2.4 W conduction loss at 17 A, reducing heatsink requirements
Q_g max	134 nC - Low gate drive power demand; compatible with standard 1-A peak gate drivers
E_AS	298 mJ - Rated for robust energy absorption during inductive turn-off transients without failure
t_rr typ	150 ns - Minimizes diode reverse recovery loss and associated EMI in bridge-leg commutation
R_thJC	3.2 °C/W - Allows direct mounting to heatsink; supports 39 W dissipation at ΔT = 125 °C
I_D cont @ T_C = 100 °C	20 A - Sustains full-load operation in compact, thermally constrained telecom rectifiers

Pinout & Package

TO-220 FULLPAK package with isolated mounting hole, copper-exposed drain tab on underside, and 3-pin vertical leadframe (G-D-S layout). Package dimensions comply with Vishay drawing 91359, Option 1 (Facility Code = 9) or Option 2 (Facility Code = Y), both specifying D = 15.87 mm nominal length and E = 10.10 mm nominal width.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 0.5 Ω typical gate input resistance minimizes ringing risk
D (Drain)	High-side power terminal	Internally connected to exposed copper tab; electrically and thermally coupled to heatsink
S (Source)	Power return / reference node	Common source node for gate drive return path and current sensing; low-inductance layout critical

Key Features

Feature	Design Value
Fast body diode	150 ns t_rr, 1.2 V V_SD - Reduces shoot-through risk and improves efficiency in synchronous rectification and half-bridge freewheeling
Low R_DS(on) × Q_g FOM	~11.3 Ω·nC - Balances low conduction loss and fast switching, optimizing total system loss in 50–100 kHz PFC
Avalanche energy rating	298 mJ single-pulse UIS - Eliminates need for external snubbers in inductive load switching circuits
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912
Thermal performance	R_thJC = 3.2 °C/W - Enables higher power density vs. standard TO-220 due to full-pad copper drain contact

Applications

Server Power Supply	PV Inverter DC-Link
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW AC-DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 75 kHz with zero-voltage switching assistance. Use Value: 84 mΩ R_DS(on) and 134 nC Q_g reduce combined conduction + switching loss by ≥12 % versus legacy 650 V MOSFETs, improving full-load efficiency to >96.2 %.	Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase NPC topology, switching at 16 kHz with hard-commutation. Use Value: Avalanche rating (298 mJ) and fast diode (150 ns t_rr) suppress voltage spikes during inductive current interruption, eliminating need for external clamping diodes.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Output inverter stage of 5 kW HVAC variable-frequency drive powering 4-pole induction motor. IC Role / Device Role / Timing Role: Phase-leg high-side switch in 3-phase bridge, conducting 20 A RMS with 10 kHz PWM modulation. Use Value: TO-220 FULLPAK's 3.2 °C/W R_thJC enables direct heatsink mounting without insulating pads, reducing thermal interface resistance by 40 % vs. insulated TO-220.	Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–60 W T8/T5 fluorescent lamps. IC Role / Device Role / Timing Role: High-frequency (40–70 kHz) resonant switch with body-diode freewheeling during dead-time intervals. Use Value: 1.2 V V_SD and 150 ns t_rr minimize lamp ignition delay and acoustic noise while sustaining >50,000-hour lifetime under thermal cycling.

Server Power Supply

PV Inverter DC-Link

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW AC-DC front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, operating at 75 kHz with zero-voltage switching assistance.

Use Value: 84 mΩ R_DS(on) and 134 nC Q_g reduce combined conduction + switching loss by ≥12 % versus legacy 650 V MOSFETs, improving full-load efficiency to >96.2 %.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in three-phase NPC topology, switching at 16 kHz with hard-commutation.

Use Value: Avalanche rating (298 mJ) and fast diode (150 ns t_rr) suppress voltage spikes during inductive current interruption, eliminating need for external clamping diodes.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Output inverter stage of 5 kW HVAC variable-frequency drive powering 4-pole induction motor.

IC Role / Device Role / Timing Role: Phase-leg high-side switch in 3-phase bridge, conducting 20 A RMS with 10 kHz PWM modulation.

Use Value: TO-220 FULLPAK's 3.2 °C/W R_thJC enables direct heatsink mounting without insulating pads, reducing thermal interface resistance by 40 % vs. insulated TO-220.

Use Scenario: Resonant half-bridge switch in electronic ballasts driving 40–60 W T8/T5 fluorescent lamps.

IC Role / Device Role / Timing Role: High-frequency (40–70 kHz) resonant switch with body-diode freewheeling during dead-time intervals.

Use Value: 1.2 V V_SD and 150 ns t_rr minimize lamp ignition delay and acoustic noise while sustaining >50,000-hour lifetime under thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N60M2	600 V, 34 A, R_DS(on) = 0.085 Ω, Q_g = 120 nC, TO-247 package	Higher thermal mass but larger footprint; requires insulating washer for heatsink mounting	Preferred where higher surge current capability and lower Q_g outweigh board space constraints
IXFH35N60P	600 V, 35 A, R_DS(on) = 0.085 Ω, Q_g = 140 nC, TO-247 package with faster t_rr (120 ns)	Superior diode speed but no avalanche rating; not UIS-tested per JEDEC JESD24-11	Selected when diode recovery dominates loss budget and inductive stress is actively clamped

Compared with STW35N60M2 and IXFH35N60P, SIHF35N60EF-GE3 offers the only TO-220 FULLPAK form factor with certified UIS ruggedness, enabling cost-effective, space-constrained designs in telecom and lighting where reliability under transient overload is non-negotiable.

Availability

SIHF35N60EF-GE3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHF35N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The EF Series MOSFETs are designed specifically for high-efficiency, high-voltage switching in server, telecom, and renewable energy systems-emphasizing low FOM, fast body diodes, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current for SIHF35N60EF-GE3 at case temperature 100 °C?

The maximum continuous drain current for SIHF35N60EF-GE3 is 20 A when the case temperature (T_C) is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 32 A at 25 °C reflects thermal limitations of the TO-220 FULLPAK package and ensures safe junction temperature operation below 150 °C. SIHF35N60EF-GE3 must be mounted on an adequately sized heatsink to sustain this current continuously.

Does SIHF35N60EF-GE3 have avalanche energy rating, and what is its value?

Yes, SIHF35N60EF-GE3 is rated for single-pulse unclamped inductive switching (UIS) with an avalanche energy (E_AS) of 298 mJ under test conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 4.6 A. This certified ruggedness allows SIHF35N60EF-GE3 to withstand transient overvoltage events without external protection components in hard-switched converters.

What is the typical reverse recovery time (t_rr) of the body diode in SIHF35N60EF-GE3?

The typical reverse recovery time (t_rr) of the integral body diode in SIHF35N60EF-GE3 is 150 ns, measured at T_J = 25 °C, I_F = I_S = 17 A, di/dt = 100 A/μs, and V_R = 400 V. This fast recovery characteristic reduces switching loss and EMI in freewheeling and synchronous rectification applications. SIHF35N60EF-GE3 leverages this feature in PFC and half-bridge topologies.

What package type does SIHF35N60EF-GE3 use, and how is it thermally optimized?

SIHF35N60EF-GE3 uses the TO-220 FULLPAK package, which features a copper-exposed drain pad on the underside for direct thermal coupling to the heatsink. Its junction-to-case thermal resistance (R_thJC) is 3.2 °C/W, significantly lower than standard TO-220 due to full-surface metal contact. This design allows SIHF35N60EF-GE3 to dissipate 39 W at T_C = 25 °C without requiring insulating hardware.

Is SIHF35N60EF-GE3 lead (Pb)-free and halogen-free?

Yes, SIHF35N60EF-GE3 is lead (Pb)-free and halogen-free, compliant with the EU RoHS Directive 2011/65/EU and Vishay's internal material categorization standards (document #99912). The "-GE3" suffix explicitly denotes this environmental compliance, making SIHF35N60EF-GE3 suitable for green manufacturing and export to regulated markets without restriction.

SIHF35N60EF-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: EF

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 97mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 134 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2568 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF35N60EF-GE3 FAQ

1.How can I place an order for SIHF35N60EF-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF35N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF35N60EF-GE3 reliable?

The price and inventory of SIHF35N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF35N60EF-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF35N60EF-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF35N60EF-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF35N60EF-GE3?

SIHF35N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF35N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF35N60EF-GE3?

For technical support, including SIHF35N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF35N60EF-GE3 requirements.

6.How does Aetrix verify that SIHF35N60EF-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF35N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF35N60EF-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF35N60EF-GE3?

All SIHF35N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF35N60EF-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF35N60EF-GE3 part is unused and in its original packaging.

Return procedure for SIHF35N60EF-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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