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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF35N60E-GE3

Name: SIHF35N60E-GE3
Brand: Vishay Siliconix
SKU: SIHF35N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF35N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF35N60E-GE3.pdf

Description:: MOSFET N-CHANNEL 600V 32A TO220

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Product details

Overview

SIHF35N60E-GE3 from Vishay Siliconix is a 600 V, 32 A N-channel enhancement-mode Power MOSFET in TO-220 FULLPAK package, featuring 0.082 Ω R_DS(on) at V_GS = 10 V, 132 nC total gate charge, and 691 mJ single-pulse avalanche energy - optimized for hard-switching PFC and SMPS stages in server power supplies and photovoltaic inverters.

For engineers reviewing the SIHF35N60E-GE3 datasheet, SIHF35N60E-GE3 pinout, SIHF35N60E-GE3 application, or SIHF35N60E-GE3 equivalent, key selection criteria include its low Q_g/R_DS(on) figure-of-merit (88 nC typical), 480 V switching capability under 17 A load, and robust UIS-rated operation in high-reliability industrial power conversion designs.

Technical Context

This E-series MOSFET uses planar stripe silicon technology with optimized cell pitch to achieve 25% lower specific on-resistance versus prior generations. Its gate structure minimizes Miller capacitance (C_rss = 5 pF) and enables fast, controllable turn-on/turn-off transitions - td(on) = 29 ns, tr = 61 ns, td(off) = 78 ns - under 480 V, 17 A conditions with 9.1 Ω gate resistor.

The device integrates an ultra-low forward-voltage body diode (V_SD = 0.9 V typ. at 17 A, T_J = 25 °C) with 455 ns typical reverse recovery time and 8 μC Q_rr, supporting efficient synchronous rectification and ZVS-capable topologies in telecom and renewable energy systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input PFC stages with ≥20% safety margin and withstands 480 V DC bus transients in photovoltaic inverters
R_DS(on) typ	0.082 Ω at V_GS = 10 V, I_D = 17 A - delivers <1.4 W conduction loss at 17 A, enabling compact thermal design in 39 W PD-limited TO-220 FULLPAK
Q_g max	132 nC - enables efficient gate drive with standard 1 A peak drivers while maintaining low switching losses in 100 kHz–300 kHz PWM applications
E_AS	691 mJ - rated for unclamped inductive switching events up to 7 A with 28.2 mH inductance, critical for motor drive fault tolerance
C_iss	2760 pF - low input capacitance reduces gate drive power and improves high-frequency stability in resonant LLC converters
T_J range	−55 °C to +150 °C - qualified for extended temperature operation in welding equipment and outdoor solar inverters
R_thJC	3.2 °C/W - enables direct heatsink mounting with ≤12.5 W junction-to-case thermal rise at full 39 W dissipation

Pinout & Package

TO-220 FULLPAK package with isolated drain tab, 3-pin through-hole outline (15.87 mm × 10.10 mm × 13.10 mm), copper-exposed drain pad for enhanced thermal transfer and electrical isolation from heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 0.5 Ω gate input resistance ensures stable Miller clamping during dV/dt stress up to 57 V/ns
D (Drain)	High-side power terminal	Connected to exposed copper tab - must be electrically isolated from heatsink; handles full 600 V blocking and 80 A pulsed current
S (Source)	Reference node / return path	Common source for gate drive and load current; ties to PCB ground plane; supports 32 A continuous current at T_C = 25 °C

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	6.7 Ω·nC (0.082 Ω × 82 nC typ) - reduces combined conduction + switching loss by >15% vs. legacy 600 V MOSFETs in 100–200 kHz PFC
Avalanche-rated (UIS)	691 mJ single-pulse energy - eliminates need for external snubbers in inductive load switching and enables robust overvoltage protection
Low C_oss (118 pF)	Minimizes capacitive turn-off loss and improves light-load efficiency in flyback and forward converters
Fast body diode recovery	455 ns t_rr, 8 μC Q_rr - reduces diode conduction loss and EMI in half-bridge configurations without requiring external Schottky
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912 - suitable for automotive and industrial green procurement

Applications

Power Factor Correction (PFC)	Photovoltaic Inverters
Use Scenario: Boost PFC stage in 1–3 kW server PSUs operating at 100–300 kHz with 400 V DC output. IC Role / Device Role / Timing Role: Main switching transistor handling 32 A RMS input current and 480 V DC bus voltage. Use Value: Low Q_g and R_DS(on) reduce total losses to <2.1 W at full load, enabling passive cooling and meeting 80 PLUS Titanium efficiency targets.	Use Scenario: DC-AC H-bridge in string inverters converting 600–1000 V DC PV array output to 230 V AC grid. IC Role / Device Role / Timing Role: High-side switch in unipolar modulation topology with 600 V blocking and 17 A peak phase current. Use Value: 691 mJ E_AS rating sustains repeated 600 V inductive turn-off events during anti-islanding protection cycles without derating.
Telecom Server Power Supplies	Industrial Motor Drives
Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter powering 48 V intermediate bus in 5G base station cabinets. IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 250 kHz with 400 V DC input and zero-voltage switching assist. Use Value: 5 pF C_rss minimizes Miller-induced shoot-through risk and enables reliable 250 kHz operation with 9.1 Ω gate resistor.	Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with 3-phase 400 V AC input and 16 kHz PWM carrier. IC Role / Device Role / Timing Role: Output stage transistor conducting 32 A continuous current with 150 °C junction temperature limit. Use Value: −55 °C to +150 °C T_J range and 3.2 °C/W R_thJC support forced-air-cooled designs meeting IEC 61800-5-1 insulation and thermal reliability requirements.

Power Factor Correction (PFC)

Photovoltaic Inverters

Use Scenario: Boost PFC stage in 1–3 kW server PSUs operating at 100–300 kHz with 400 V DC output.

IC Role / Device Role / Timing Role: Main switching transistor handling 32 A RMS input current and 480 V DC bus voltage.

Use Value: Low Q_g and R_DS(on) reduce total losses to <2.1 W at full load, enabling passive cooling and meeting 80 PLUS Titanium efficiency targets.

Use Scenario: DC-AC H-bridge in string inverters converting 600–1000 V DC PV array output to 230 V AC grid.

IC Role / Device Role / Timing Role: High-side switch in unipolar modulation topology with 600 V blocking and 17 A peak phase current.

Use Value: 691 mJ E_AS rating sustains repeated 600 V inductive turn-off events during anti-islanding protection cycles without derating.

Telecom Server Power Supplies

Industrial Motor Drives

Use Scenario: Primary-side switch in 1.5 kW LLC resonant converter powering 48 V intermediate bus in 5G base station cabinets.

IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 250 kHz with 400 V DC input and zero-voltage switching assist.

Use Value: 5 pF C_rss minimizes Miller-induced shoot-through risk and enables reliable 250 kHz operation with 9.1 Ω gate resistor.

Use Scenario: Inverter leg switch in 7.5 kW HVAC compressor drive with 3-phase 400 V AC input and 16 kHz PWM carrier.

IC Role / Device Role / Timing Role: Output stage transistor conducting 32 A continuous current with 150 °C junction temperature limit.

Use Value: −55 °C to +150 °C T_J range and 3.2 °C/W R_thJC support forced-air-cooled designs meeting IEC 61800-5-1 insulation and thermal reliability requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N60M2	600 V, 34 A, R_DS(on) = 0.075 Ω, Q_g = 105 nC, TO-247 package	Higher peak current and lower R_DS(on), but larger footprint and no integrated avalanche rating	Preferred where board space allows TO-247 and higher continuous current is required; requires external avalanche protection
IXFH35N60P	600 V, 35 A, R_DS(on) = 0.085 Ω, Q_g = 120 nC, TO-247 package with enhanced dV/dt immunity	Superior 100 V/ns dV/dt immunity and higher T_J rating (+175 °C), but no halogen-free compliance	Selected for high-noise industrial environments like welding equipment where gate noise immunity is critical

Compared with STW35N60M2 and IXFH35N60P, the SIHF35N60E-GE3 offers the only combination of lead-free/halogen-free compliance, certified UIS rating, and TO-220 FULLPAK thermal performance - making it optimal for space-constrained, green-certified telecom and solar applications where layout simplicity and regulatory alignment are mandatory.

Availability

SIHF35N60E-GE3 is available at Aetrix Electronics and suitable for power factor correction, photovoltaic inverters, and telecom server power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SIHF35N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualification capabilities.

The SIHF35N60E-GE3 belongs to Vishay's E-Series high-voltage Power MOSFET family, engineered specifically for efficiency-critical, high-reliability AC-DC and DC-AC conversion in computing, renewable energy, and industrial automation systems.

FAQ

What is the maximum continuous drain current rating for SIHF35N60E-GE3 at 100 °C case temperature?

The SIHF35N60E-GE3 supports 20 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from 32 A at 25 °C reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation within its 3.2 °C/W R_thJC and 39 W P_D envelope. Designers must verify heatsink interface resistance to maintain T_J ≤ 150 °C under worst-case ambient conditions.

Does SIHF35N60E-GE3 have a fully rated avalanche capability, and how is it tested?

Yes, the SIHF35N60E-GE3 is fully rated for unclamped inductive switching (UIS) with E_AS = 691 mJ, measured per note b: V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, I_AS = 7 A. This validated energy rating allows use in circuits subject to inductive turn-off stress without external snubbers - a key differentiator versus non-UIS-rated 600 V MOSFETs.

What is the typical gate threshold voltage range for SIHF35N60E-GE3, and why does it matter for drive circuit design?

The SIHF35N60E-GE3 has a V_GS(th) range of 2 V to 4 V at I_D = 250 μA. This moderate threshold enables reliable turn-on with standard 10 V gate drivers while avoiding accidental conduction from noise coupling - critical in high-dV/dt environments like motor drives. Designers must ensure gate drive overshoot stays below ±30 V (absolute max V_GS) to prevent oxide damage.

How does the body diode performance of SIHF35N60E-GE3 compare to standard 600 V MOSFETs in hard-switched applications?

The SIHF35N60E-GE3 body diode delivers V_SD = 0.9 V typ. at 17 A and t_rr = 455 ns, significantly faster and lower-loss than conventional 600 V MOSFETs (typically >1.2 V, >1000 ns). This reduces commutation loss and EMI in bridge topologies - verified in Fig. 8 and Fig. 16 of the datasheet - and supports quasi-resonant operation without external diode replacement.

Is SIHF35N60E-GE3 compatible with lead-free reflow soldering processes, and what is the peak temperature limit?

Yes, SIHF35N60E-GE3 is qualified for lead-free assembly with a peak soldering temperature of 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. The TO-220 FULLPAK package meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating bake requirements and supporting standard SMT reflow profiles used in high-volume power supply manufacturing.

SIHF35N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 94mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 132 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2760 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF35N60E-GE3 FAQ

1.How can I place an order for SIHF35N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF35N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF35N60E-GE3 reliable?

The price and inventory of SIHF35N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF35N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF35N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF35N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF35N60E-GE3?

SIHF35N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF35N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF35N60E-GE3?

For technical support, including SIHF35N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF35N60E-GE3 requirements.

6.How does Aetrix verify that SIHF35N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF35N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF35N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF35N60E-GE3?

All SIHF35N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF35N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF35N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHF35N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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