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Vishay Siliconix SIHF520STRL-GE3
- Part No.:
- SIHF520STRL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHF520STRL-GE3.pdf
- Description:
- MOSFET N-CH 100V 9.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,166
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Product details
Overview
SIHF520STRL-GE3 from Vishay Siliconix is a surface-mount N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 9.2 A continuous drain current at 25 °C, and 0.27 Ω RDS(on) at VGS = 10 V. It delivers fast switching, repetitive avalanche capability, and 175 °C operation-used in DC-DC converters, motor drivers, and power supply primary-side switches.
For engineers reviewing the SIHF520STRL-GE3 datasheet, SIHF520STRL-GE3 pinout, SIHF520STRL-GE3 application, or SIHF520STRL-GE3 equivalent, key selection criteria include its 100 V rating, 0.27 Ω on-resistance, 16 nC total gate charge, D2PAK thermal performance (RthJC = 2.5 °C/W), and suitability for high-current surface-mount power switching with avalanche ruggedness.
Technical Context
This MOSFET employs third-generation silicon process technology optimized for low conduction loss and robust switching behavior. Its D2PAK package enables high-power dissipation (60 W at TC = 25 °C) and supports PCB-mount thermal management with 40 °C/W RthJA.
The device features dynamic dV/dt immunity (5.5 V/ns), intrinsic body diode with 110–260 ns reverse recovery time, and gate threshold voltage of 2.0–4.0 V. It is halogen-free per IEC 61249-2-21 and RoHS-compliant with lead-free terminations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for primary-side switch applications up to 48 V input systems with margin. |
| RDS(on) @ VGS = 10 V | 0.27 Ω - Enables <1.4 W conduction loss at 9.2 A, supporting efficient medium-power switching. |
| ID Continuous @ TC = 25 °C | 9.2 A - Sustains high load current in compact surface-mount designs without forced cooling. |
| Qg | 16 nC - Determines gate drive power requirement; compatible with standard 10–18 Ω gate resistors for <30 ns rise/fall times. |
| EAS | 200 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients in motor or solenoid drives. |
| TJ Range | −55 to +175 °C - Supports operation in industrial and automotive under-hood environments without derating below 100 °C ambient. |
| RthJC | 2.5 °C/W - Enables direct heatsinking via exposed drain pad; critical for thermal design in high-duty-cycle applications. |
Pinout & Package
D2PAK (TO-263) package: surface-mount, single-ended 3-lead power package with exposed drain pad for thermal and electrical connection. Dimensions per JEDEC TO-263AB outline; recommended minimum PCB pad: 10.67 mm × 9.02 mm (420 mil × 355 mil).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; 2.0–4.0 V VGS(th) allows compatibility with 5 V logic with margin. |
| 2 (D) | Drain | Main high-side power terminal; electrically and thermally connected to exposed copper pad; carries full load current and dissipates heat. |
| 3 (S) | Source | Power return path; referenced to control ground; used for current sensing and gate drive referencing in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive Avalanche Rated | Enables reliable operation in inductive switching without external snubbers-validated at 9.2 A, 25 V, L = 3.5 mH. |
| Dynamic dV/dt Rating | 5.5 V/ns - Resists false turn-on during high-slew-rate voltage transients in half-bridge or flyback topologies. |
| Fast Switching | 8.8 ns turn-on delay + 30 ns rise time - Reduces switching losses in 100–500 kHz SMPS designs. |
| Halogen-Free Construction | Complies with IEC 61249-2-21 - Meets environmental requirements for industrial and consumer end equipment. |
| 175 °C Operating Temperature | Supports extended thermal headroom in sealed enclosures or high-ambient environments without derating. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Step-down conversion from 24–48 V bus to 5–12 V for embedded controllers and sensors. IC Role / Device Role / Timing Role: High-side synchronous rectifier or primary switch in non-isolated buck topology. Use Value: 0.27 Ω RDS(on) minimizes conduction loss at 5–10 A loads; D2PAK thermal interface sustains >90% efficiency at full load. |
Use Scenario: H-bridge or half-bridge control of 12–36 V brushed motors in robotics and industrial actuators. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling bidirectional current up to 9.2 A. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; 175 °C rating prevents thermal shutdown in stalled conditions. |
| AC-DC Adapter Primary Switch | LED Constant-Current Driver |
|
Use Scenario: Discrete flyback or forward converter primary-side switch in universal-input (90–264 VAC) adapters. IC Role / Device Role / Timing Role: Main power switch operating in discontinuous or quasi-resonant mode at 65–130 kHz. Use Value: 100 V VDS provides margin over reflected output voltage + leakage spikes; 200 mJ EAS handles unclamped inductive energy safely. |
Use Scenario: Constant-current regulation for high-brightness LED strings in architectural and industrial lighting. IC Role / Device Role / Timing Role: PWM-controlled series pass element in buck or boost LED driver stage. Use Value: Fast switching (30 ns rise) enables precise dimming control at >1 kHz PWM frequency; low Qg reduces gate driver losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF520NPbF | Same die, TO-220 package; higher RthJA (62 °C/W), no exposed thermal pad. | Suitable for prototyping or low-volume through-hole designs; not surface-mount compatible. | Select when manual assembly, heatsink mounting, or legacy footprint compatibility is required. |
| STP10NK50ZFP | Zener-protected gate; 500 V VDS, 0.55 Ω RDS(on); higher voltage, lower current, higher on-resistance. | Better suited for offline 230 VAC applications; less efficient at 24–48 V due to higher conduction loss. | Choose only if system requires >400 V blocking capability and can accept reduced current density. |
Compared with IRF520NPbF, SIHF520STRL-GE3 offers superior thermal performance and automated assembly compatibility; versus STP10NK50ZFP, it delivers lower conduction loss and faster switching at the cost of reduced voltage rating-making it optimal for medium-voltage, high-current DC power stages.
Availability
SIHF520STRL-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and LED drivers requiring stable component supply, tape-and-reel packaging for SMT production, and long-term industrial lifecycle support.
Supply support for SIHF520STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SIHF520STRL-GE3 belongs to Vishay's third-generation Power MOSFET family, engineered for cost-effective, ruggedized switching in high-current surface-mount power supplies and motor drives.
FAQ
What is the maximum continuous drain current rating for SIHF520STRL-GE3 at 100 °C case temperature?
The SIHF520STRL-GE3 supports 6.5 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package; at TC = 25 °C, it delivers 9.2 A. Designers must verify PCB copper area and airflow to maintain case temperature within this range for sustained operation.
Does SIHF520STRL-GE3 have avalanche capability, and how is it specified?
Yes, SIHF520STRL-GE3 is repetitively avalanche rated with 6.0 mJ EAR and 200 mJ single-pulse EAS. The datasheet validates avalanche performance at VDD = 25 V, IAS = 9.2 A, L = 3.5 mH, and Rg = 25 Ω. This ruggedness enables reliable operation in inductive switching without external protection components.
What is the gate threshold voltage range for SIHF520STRL-GE3, and how does it affect drive requirements?
The SIHF520STRL-GE3 has a gate threshold voltage (VGS(th)) of 2.0–4.0 V at ID = 250 μA. While it turns on partially at 5 V, full enhancement requires ≥10 V to achieve the specified 0.27 Ω RDS(on). Logic-level drivers must be verified for sufficient gate drive strength to avoid linear-mode operation and thermal runaway.
How does the D2PAK package of SIHF520STRL-GE3 improve thermal performance compared to TO-220?
The D2PAK package of SIHF520STRL-GE3 provides RthJC = 2.5 °C/W-significantly lower than TO-220's typical ~3.5 °C/W-and integrates an exposed drain pad for direct PCB copper thermal spreading. Its surface-mount form enables automated assembly and better board-level thermal coupling, especially with 1"² FR-4 copper pours achieving RthJA ≈ 40 °C/W.
Is SIHF520STRL-GE3 compliant with halogen-free and RoHS standards?
Yes, SIHF520STRL-GE3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant, as confirmed by Vishay's documentation (S16-1000-Rev. D). The "-GE3" suffix denotes lead-free and halogen-free construction, with matte tin plating and no brominated flame retardants in the mold compound.
SIHF520STRL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHF520STRL-GE3 FAQ
1.How can I place an order for SIHF520STRL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHF520STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHF520STRL-GE3 reliable?
The price and inventory of SIHF520STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF520STRL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHF520STRL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF520STRL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHF520STRL-GE3?
SIHF520STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHF520STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHF520STRL-GE3?
For technical support, including SIHF520STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF520STRL-GE3 requirements.
6.How does Aetrix verify that SIHF520STRL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHF520STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF520STRL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHF520STRL-GE3?
All SIHF520STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF520STRL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHF520STRL-GE3 part is unused and in its original packaging.
Return procedure for SIHF520STRL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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