Vishay Siliconix SIHF520STRR-GE3

Overview

SIHF520STRR-GE3 from Vishay Siliconix is a surface-mount N-channel Power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 9.2 A continuous drain current at 25 °C, and 0.27 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching, repetitive avalanche capability, and 175 °C operation-ideal for DC-DC converters and motor control circuits requiring rugged high-current switching.

For engineers reviewing the SIHF520STRR-GE3 datasheet, SIHF520STRR-GE3 pinout, SIHF520STRR-GE3 application, or SIHF520STRR-GE3 equivalent, key selection criteria include its 16 nC total gate charge, 200 mJ single-pulse avalanche energy, thermal resistance of 2.5 °C/W junction-to-case, and compatibility with standard D2PAK PCB footprints and reflow profiles.

Technical Context

This third-generation Power MOSFET uses planar V-groove technology optimized for low conduction loss and robust unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers, while dynamic dV/dt rating of 5.5 V/ns supports noise-immune operation in high-speed switching environments.

The device integrates a fast-recovery body diode with 110–260 ns reverse recovery time and 0.53–1.3 μC Q_rr, enabling efficient synchronous rectification and freewheeling in buck converters and H-bridge motor drives without external diode supplementation.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S); 14.61–15.88 mm height; 9.65–10.67 mm width; 8.38–9.65 mm length; RoHS-compliant, halogen-free construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF520NPbF and STP10NK50ZFP, SIHF520STRR-GE3 provides optimal balance of low R_DS(on), moderate gate charge, surface-mount scalability, and cost for 100 V industrial switching-delivering lower thermal resistance and higher power density than TO-220 alternatives while avoiding unnecessary voltage overhead and drive complexity of superjunction devices.

Availability

SIHF520STRR-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor controllers, LED drivers, and industrial power supplies requiring stable component supply, long-term manufacturability, and RoHS/halogen-free compliance.

Supply support for SIHF520STRR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-efficiency performance.

The SIHF520STRR-GE3 belongs to Vishay's third-generation D2PAK Power MOSFET family, engineered for high-current, high-temperature switching in industrial automation, power conversion, and motor control where low on-resistance and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current rating for SIHF520STRR-GE3 at 100 °C case temperature?

The SIHF520STRR-GE3 supports 6.5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package under sustained high-temperature operation and must be validated with actual PCB layout, copper area, and airflow conditions. The SIHF520STRR-GE3 maintains safe operation within its SOA curve up to this current level when mounted on a 1" square FR-4 PCB.

Does SIHF520STRR-GE3 have a built-in body diode, and what are its key parameters?

Yes, the SIHF520STRR-GE3 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 9.2 A continuous source-drain current, 1.8 V forward voltage at 9.2 A and 25 °C, and 110–260 ns reverse recovery time with 0.53–1.3 μC Q_rr. These values enable effective freewheeling in inductive loads, though external Schottky diodes may still be used for ultra-low-loss or high-frequency applications.

What is the gate threshold voltage range for SIHF520STRR-GE3, and how does it affect drive circuit design?

The SIHF520STRR-GE3 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C. This allows reliable enhancement with standard 5 V or 10 V logic-level gate drivers, but full R_DS(on) specification requires V_GS ≥ 10 V. Drive circuits must ensure gate voltage exceeds 4.0 V under worst-case conditions-including PCB trace resistance and driver output impedance-to prevent partial turn-on and excessive heating.

Can SIHF520STRR-GE3 be paralleled with identical units, and what design considerations apply?

Yes, the SIHF520STRR-GE3 is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as junction temperature rises. Successful paralleling requires matched gate drive paths (equal trace length and impedance), symmetrical PCB layout, shared thermal plane, and individual gate resistors (typically 10–22 Ω) to dampen oscillation. The SIHF520STRR-GE3 datasheet explicitly cites "Ease of Paralleling" as a feature.

Is SIHF520STRR-GE3 suitable for avalanche energy handling in inductive switching applications?

Yes, the SIHF520STRR-GE3 is repetitively avalanche-rated with 6.0 mJ per pulse and a single-pulse avalanche energy rating of 200 mJ. It is qualified for unclamped inductive switching per test conditions in Figure 12 (V_DD = 25 V, I_AS = 9.2 A). For reliable operation, designers must limit pulse width and duty cycle per the SOA curves and ensure junction temperature remains below 175 °C during avalanche events. The SIHF520STRR-GE3's ruggedized die design supports this capability without derating.