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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF530-GE3

Name: SIHF530-GE3
Brand: Vishay Siliconix
SKU: SIHF530-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF530-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHF530-GE3.pdf

Description:: MOSFET N-CH 100V 14A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF530-GE3 from Vishay Siliconix is a 100 V, 14 A N-channel power MOSFET in TO-220AB package, featuring 0.16 Ω R_DS(on) at V_GS = 10 V, 26 nC total gate charge, and 175 °C maximum junction temperature - designed for DC-DC converters, motor drives, and switching power supplies.

For engineers reviewing the SIHF530-GE3 datasheet, SIHF530-GE3 pinout, SIHF530-GE3 application, or SIHF530-GE3 equivalent, key selection criteria include avalanche ruggedness (69 mJ single-pulse), fast switching (10 ns turn-on delay), dynamic dV/dt rating (5.5 V/ns), and ease of paralleling due to positive R_DS(on) temperature coefficient.

Technical Context

This third-generation power MOSFET uses planar VDMOS technology with optimized cell layout for low conduction loss and robust unclamped inductive switching performance. Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 5 V and 10 V logic-level drivers.

The device integrates a fast-recovery body diode (t_rr = 150–280 ns, Q_rr = 0.85–1.7 μC) and supports repetitive avalanche operation up to 14 A, enabling reliable operation in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on) @ V_GS = 10 V	0.16 Ω - enables ≤2.2 W conduction loss at 14 A continuous drain current
Q_g	26 nC - determines gate drive power requirement (~130 µW per MHz at 5 V swing)
I_D (T_C = 25 °C)	14 A - defines maximum continuous current with heatsink at ambient conditions
E_AS	69 mJ - specifies single-pulse avalanche energy handling without failure
dV/dt Rating	5.5 V/ns - ensures immunity to parasitic turn-on in high-speed switching circuits
T_J Range	–55 to +175 °C - allows operation in industrial and automotive under-hood environments

Pinout & Package

SIHF530-GE3 is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 1.7 °C/W) and mechanical robustness for high-power mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires <26 nC charge for full enhancement
D (Drain)	High-side power terminal	Connected to heatsink tab; carries main load current and sustains 100 V blocking capability
S (Source)	Reference/return terminal	Serves as common return path for load current and gate drive reference; internal connection to body diode cathode

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 14 A repetitive avalanche current and 8.8 mJ energy - eliminates need for external clamping in inductive load switching
Dynamic dV/dt rating	5.5 V/ns immunity - prevents false triggering during high-slew-rate voltage transitions
Fast switching	10 ns turn-on delay + 34 ns rise time - enables >500 kHz operation in SMPS designs
Positive R_DS(on) tempco	Enables stable current sharing when paralleling multiple SIHF530-GE3 devices without external ballasting resistors
175 °C operating temperature	Permits derated operation in sealed enclosures or high-ambient environments without thermal shutdown

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down conversion from 48 V input to 12 V output in telecom power shelves. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 14 A peak current. Use Value: 0.16 Ω R_DS(on) minimizes conduction loss (≤2.2 W), while 26 nC Q_g enables efficient gate driving with low-side driver ICs like IR2104.	Use Scenario: H-bridge control of 24 V, 10 A brushed motors in industrial automation actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with integrated body diode commutation. Use Value: 150–280 ns body diode reverse recovery time and 1.7 μC Q_rr reduce switching losses and EMI during PWM freewheeling.
AC-DC PFC Stage	LED Constant-Current Driver
Use Scenario: Boost switch in active PFC front-end for 1 kW industrial power supply. IC Role / Device Role / Timing Role: Main switching transistor conducting 14 A RMS current at 65 kHz with unclamped inductive stress. Use Value: 69 mJ single-pulse avalanche energy rating protects against line surge events without snubber circuitry.	Use Scenario: Primary-side switch in isolated flyback LED driver delivering 350 mA constant current to high-brightness arrays. IC Role / Device Role / Timing Role: Primary FET controlling energy transfer to secondary side via transformer coupling. Use Value: 175 °C max junction temperature supports compact heatsink design in thermally constrained LED luminaires.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down conversion from 48 V input to 12 V output in telecom power shelves.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 14 A peak current.

Use Value: 0.16 Ω R_DS(on) minimizes conduction loss (≤2.2 W), while 26 nC Q_g enables efficient gate driving with low-side driver ICs like IR2104.

Use Scenario: H-bridge control of 24 V, 10 A brushed motors in industrial automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with integrated body diode commutation.

Use Value: 150–280 ns body diode reverse recovery time and 1.7 μC Q_rr reduce switching losses and EMI during PWM freewheeling.

AC-DC PFC Stage

LED Constant-Current Driver

Use Scenario: Boost switch in active PFC front-end for 1 kW industrial power supply.

IC Role / Device Role / Timing Role: Main switching transistor conducting 14 A RMS current at 65 kHz with unclamped inductive stress.

Use Value: 69 mJ single-pulse avalanche energy rating protects against line surge events without snubber circuitry.

Use Scenario: Primary-side switch in isolated flyback LED driver delivering 350 mA constant current to high-brightness arrays.

IC Role / Device Role / Timing Role: Primary FET controlling energy transfer to secondary side via transformer coupling.

Use Value: 175 °C max junction temperature supports compact heatsink design in thermally constrained LED luminaires.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NF10	100 V, 14 A, R_DS(on) = 0.18 Ω, Q_g = 22 nC, TO-220FP package (full-pack)	Lower gate charge reduces drive loss but higher R_DS(on) increases conduction loss by ~12.5% at 14 A	Prefer STP14NF10 where gate drive efficiency is critical and thermal margin allows higher on-resistance
IRFZ44NPBF	55 V, 49 A, R_DS(on) = 0.028 Ω, Q_g = 71 nC, TO-220AB	Lower voltage rating limits use to ≤36 V systems; higher current capacity suits high-current, low-voltage motor control	Choose IRFZ44NPBF only for 24 V or lower bus applications requiring sub-30 mΩ on-resistance and accepting higher gate drive demand

Compared with STP14NF10 and IRFZ44NPBF, the SIHF530-GE3 offers optimal balance of 100 V rating, moderate gate charge, and proven avalanche ruggedness - making it preferred for 48 V industrial switching where reliability under transient stress is prioritized over minimal conduction loss.

Availability

SIHF530-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and AC-DC power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.

Supply support for SIHF530-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and reliability.

The SIHF530-GE3 belongs to Vishay's third-generation power MOSFET family engineered for commercial and industrial switching applications demanding high avalanche energy, fast switching, and ease of paralleling.

FAQ

What is the maximum continuous drain current for SIHF530-GE3 at 100 °C case temperature?

The SIHF530-GE3 supports 10 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsink sizing using R_thJC = 1.7 °C/W and system ambient conditions to maintain this rating for SIHF530-GE3.

Does SIHF530-GE3 have avalanche capability, and how is it rated?

Yes, SIHF530-GE3 is repetitively avalanche rated with I_AR = 14 A and E_AR = 8.8 mJ, and single-pulse avalanche energy E_AS = 69 mJ. These ratings are validated under defined test conditions (V_DD = 25 V, L = 528 µH, R_g = 25 Ω). The SIHF530-GE3 can sustain repeated inductive switching events without degradation, making it suitable for relay drivers and solenoid controls where snubberless operation is required.

What is the gate threshold voltage range for SIHF530-GE3, and how does it affect drive compatibility?

The SIHF530-GE3 has a gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 µA. This range ensures reliable turn-on with standard 5 V logic outputs and full enhancement with 10 V gate drive. Because the SIHF530-GE3 is not a logic-level MOSFET, it requires ≥4.5 V minimum gate voltage for partial conduction and ≥10 V for specified R_DS(on), so gate drivers must be selected accordingly to avoid linear-mode heating.

How does the body diode performance of SIHF530-GE3 compare to fast recovery diodes?

The SIHF530-GE3 body diode exhibits t_rr = 150–280 ns and Q_rr = 0.85–1.7 µC at T_J = 25 °C, which is typical for standard power MOSFETs but slower than dedicated ultrafast recovery diodes (t_rr < 50 ns). In applications like synchronous rectification or freewheeling, this means the SIHF530-GE3 body diode contributes measurable switching loss and EMI. For high-frequency designs, external Schottky or SiC diodes may be preferred - though the SIHF530-GE3 remains viable in ≤100 kHz topologies.

Is SIHF530-GE3 RoHS-compliant and halogen-free?

Yes, SIHF530-GE3 is both RoHS-compliant and halogen-free, as indicated by the "-GE3" suffix per Vishay's ordering nomenclature. It meets JEDEC JS709B and IEC 61249-2-21 requirements. The device uses matte tin-plated leads and green molding compound, with no brominated flame retardants or antimony trioxide. Full compliance documentation, including material declarations and test reports, is available upon request for SIHF530-GE3.

SIHF530-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHF530-GE3 FAQ

1.How can I place an order for SIHF530-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF530-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF530-GE3 reliable?

The price and inventory of SIHF530-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF530-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF530-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF530-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF530-GE3?

SIHF530-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF530-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF530-GE3?

For technical support, including SIHF530-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF530-GE3 requirements.

6.How does Aetrix verify that SIHF530-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF530-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF530-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF530-GE3?

All SIHF530-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF530-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF530-GE3 part is unused and in its original packaging.

Return procedure for SIHF530-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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