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Vishay Siliconix SIHF530STRL-GE3
- Part No.:
- SIHF530STRL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHF530STRL-GE3.pdf
- Description:
- MOSFET N-CH 100V 14A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:700
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Product details
Overview
SIHF530STRL-GE3 from Vishay Siliconix is a surface-mount N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 100 V drain-source voltage, 14 A continuous drain current at TC = 25 °C, and 0.16 Ω RDS(on) at VGS = 10 V. It supports fast switching, repetitive avalanche operation up to 8.8 mJ, and operates up to 175 °C junction temperature - deployed in DC-DC converters, motor drive half-bridges, and industrial power supplies.
For engineers reviewing the SIHF530STRL-GE3 datasheet, SIHF530STRL-GE3 pinout, SIHF530STRL-GE3 application, or SIHF530STRL-GE3 equivalent, key selection criteria include its 26 nC total gate charge, 5.5 nC gate-source charge, 11 nC gate-drain charge, 1.7 °C/W junction-to-case thermal resistance, and RoHS-compliant lead-free/halogen-free construction per Vishay S20-0683-Rev. D.
Technical Context
This MOSFET uses third-generation silicon process optimized for low RDS(on) and fast switching with ruggedized die design. Its dynamic dv/dt rating of 5.5 V/ns and unclamped inductive switching capability support reliable operation in hard-switched topologies without external snubbers.
The device integrates a co-packaged body diode with 150–280 ns reverse recovery time and 0.85–1.7 μC Qrr, enabling moderate-frequency synchronous rectification and freewheeling in buck and flyback converters where diode conduction is intermittent.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage in high-side switch or bridge-leg configuration without breakdown risk under transient overvoltage. |
| RDS(on) @ VGS = 10 V | 0.16 Ω - Enables ≤2.2 W conduction loss at 11.7 A RMS, suitable for 12–48 V input power stages with <1% efficiency penalty. |
| Qg | 26 nC - Determines gate driver power requirement; drives ~1.3 W loss at 50 kHz with 12 V gate swing and 10 Ω driver impedance. |
| ID (continuous, TC = 25 °C) | 14 A - Supports ≥168 W output in PCB-mounted applications with adequate heatsinking on 1" FR-4 board. |
| EAS | 69 mJ - Withstands single-pulse inductive energy events (e.g., relay coil de-energization or motor phase commutation) without failure. |
| TJ max | 175 °C - Allows operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood or industrial PLC cabinets). |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Receives 10 V logic-level signal to fully enhance channel; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller GPIOs. |
| Drain (D) | High-side power node | Connected to PCB thermal pad; carries full load current and must be routed with minimum trace inductance to limit voltage overshoot during turn-off. |
| Source (S) | Reference node / return path | Serves as local ground reference for gate drive; internal source inductance (7.5 nH) affects switching speed and requires Kelvin source routing in high-di/dt designs. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation in inductive load switching without external clamping; 8.8 mJ EAR supports >100,000 cycles at 14 A IAR. |
| Dynamic dv/dt immunity | 5.5 V/ns rating prevents false turn-on due to parasitic coupling in high-speed half-bridge layouts with shared source paths. |
| Low RthJC | 1.7 °C/W enables direct mounting to copper pour or heatsink; achieves <50 °C rise above case at 14 A with minimal thermal interface material. |
| RoHS-compliant & halogen-free | Meets IPC-1752A material declaration requirements; GE3 suffix confirms lead-free matte tin plating and compliant substrate materials. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Step-down regulation from 24 V to 5 V/3.3 V for embedded control modules in factory automation systems. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with forced PWM mode. Use Value: 0.16 Ω RDS(on) reduces conduction loss by 35% vs. legacy 0.25 Ω devices, improving full-load efficiency from 89% to 92% at 5 A output. |
Use Scenario: H-bridge driver for 12–24 V brushed motors in robotic joint actuators requiring bidirectional torque and regenerative braking. IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 56 A during stall conditions. Use Value: Repetitive avalanche rating absorbs back-EMF spikes during rapid direction reversal, eliminating need for external TVS diodes. |
| Industrial Power Supply | LED Constant-Current Driver |
|
Use Scenario: Primary-side switch in 100–200 W offline flyback converter powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch with 100 V VDS margin over 85–265 VAC input rectified peak (375 V). Use Value: 175 °C TJ max allows derated operation at 125 °C ambient without thermal shutdown, supporting fanless enclosure designs. |
Use Scenario: Dimmable constant-current switch in 40–100 W LED streetlight drivers using analog/PWM dimming. IC Role / Device Role / Timing Role: Series-pass transistor modulating LED string current at 1–10 kHz PWM frequency. Use Value: Fast 34 ns rise time and 24 ns fall time enable precise current regulation with <1% ripple at 10 kHz, meeting IEC 61000-3-2 harmonic limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF530NPbF | Same die, but Pb-containing terminations; RDS(on) = 0.16 Ω, Qg = 26 nC, but not RoHS-compliant. | Restricted to non-RoHS markets or legacy repair programs; incompatible with EU WEEE/RoHS enforcement. | Select only if compliance documentation explicitly permits Pb-based components in target region. |
| STP14NF10 | 100 V, 14 A, RDS(on) = 0.18 Ω, Qg = 22 nC; TO-220 package, higher RthJA (62 °C/W vs. 1.7 °C/W). | Requires through-hole assembly and external heatsink; unsuitable for space-constrained SMT-only boards. | Choose when thermal management via bolted heatsink is preferred over PCB copper area, and lead time for SIHF530STRL-GE3 is constrained. |
Compared with IRF530NPbF, SIHF530STRL-GE3 provides identical electrical performance with RoHS/halogen-free compliance; compared with STP14NF10, it delivers superior thermal performance in surface-mount layouts but requires careful PCB pad design for the D2PAK thermal pad.
Availability
SIHF530STRL-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and LED lighting systems requiring stable component supply across multi-year production cycles.
Supply support for SIHF530STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics since 1962.
The SIHF530STRL-GE3 belongs to Vishay's third-generation D2PAK power MOSFET family, engineered for high-current, high-efficiency switching in industrial and automotive power systems where ruggedness and thermal performance are critical.
FAQ
What is the maximum continuous drain current for SIHF530STRL-GE3 at 100 °C case temperature?
The SIHF530STRL-GE3 supports 10 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to maintain case temperature below this threshold under full load.
Does SIHF530STRL-GE3 have a built-in body diode, and what are its key parameters?
Yes, SIHF530STRL-GE3 integrates a monolithic body diode with typical forward voltage of 2.5 V at 14 A and reverse recovery time of 150–280 ns. Its Qrr is 0.85–1.7 μC, making it suitable for freewheeling in non-synchronous buck converters but not recommended for high-frequency synchronous rectification without external optimization.
What is the gate threshold voltage range for SIHF530STRL-GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SIHF530STRL-GE3 is 2.0–4.0 V at ID = 250 μA. This range confirms logic-level compatibility with 3.3 V and 5 V microcontrollers, but full enhancement requires ≥10 V gate drive to achieve the rated 0.16 Ω RDS(on). A gate driver capable of sourcing/sinking ≥1 A peak current is recommended to minimize switching losses given the 26 nC total gate charge.
Can SIHF530STRL-GE3 be paralleled with identical units, and what design considerations apply?
Yes, SIHF530STRL-GE3 is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. To ensure balanced operation, use matched gate resistors (±5%), symmetrical PCB layout with equal trace lengths, and Kelvin source connections to eliminate common-source inductance imbalance that could cause oscillation or shoot-through.
What is the thermal resistance from junction to case (RthJC) for SIHF530STRL-GE3, and how should it be used in thermal design?
The maximum junction-to-case thermal resistance (RthJC) for SIHF530STRL-GE3 is 1.7 °C/W, measured from die to the exposed drain pad. In thermal modeling, this value defines the dominant heat path when the D2PAK drain tab is soldered directly to a large copper plane or heatsink. For accurate junction temperature prediction, combine RthJC with the thermal resistance of the interface material and heatsink to ambient.
SIHF530STRL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 670 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHF530STRL-GE3 FAQ
1.How can I place an order for SIHF530STRL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHF530STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHF530STRL-GE3 reliable?
The price and inventory of SIHF530STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF530STRL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHF530STRL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF530STRL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHF530STRL-GE3?
SIHF530STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHF530STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHF530STRL-GE3?
For technical support, including SIHF530STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF530STRL-GE3 requirements.
6.How does Aetrix verify that SIHF530STRL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHF530STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF530STRL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHF530STRL-GE3?
All SIHF530STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF530STRL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHF530STRL-GE3 part is unused and in its original packaging.
Return procedure for SIHF530STRL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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