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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF540S-GE3

Name: SIHF540S-GE3
Brand: Vishay Siliconix
SKU: SIHF540S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF540S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHF540S-GE3.pdf

Description:: MOSFET N-CH 100V 28A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF540S-GE3 from Vishay Siliconix is a 100 V, 28 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.077 Ω R_DS(on) at V_GS = 10 V, 72 nC total gate charge, and 175 °C maximum junction temperature - designed for high-current DC-DC converters, motor drives, and industrial power switching.

For engineers reviewing the SIHF540S-GE3 datasheet, SIHF540S-GE3 pinout, SIHF540S-GE3 application, or SIHF540S-GE3 equivalent, key selection criteria include avalanche ruggedness (230 mJ single-pulse E_AS), fast switching (11 ns t_d(on), 44 ns t_r), PCB-mount thermal performance (R_thJA = 40 °C/W), and RoHS-compliant lead-free/halogen-free construction.

Technical Context

This third-generation power MOSFET employs planar V-groove silicon technology optimized for low conduction loss and robust unclamped inductive switching. Its dynamic dv/dt rating (5.5 V/ns) and repetitive avalanche capability (15 mJ E_AR) support reliable operation in hard-switched topologies without snubbers.

The device integrates a fast-recovery body diode (t_rr = 180–360 ns, Q_rr = 1.3–2.8 μC) with low forward voltage (V_SD = 2.5 V at I_S = 28 A), enabling efficient synchronous rectification and freewheeling in half-bridge and full-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on)	0.077 Ω @ V_GS = 10 V - enables ≤2.2 W conduction loss at 17 A continuous current
I_D (continuous)	28 A @ T_C = 25 °C - delivers high power density in surface-mount thermal design
Q_g	72 nC - determines gate driver power requirement and switching speed trade-off
E_AS	230 mJ - allows safe energy absorption during inductive turn-off without external clamping
T_J(max)	175 °C - permits operation in sealed enclosures or high-ambient industrial environments
P_D	150 W @ T_C = 25 °C - requires heatsink or copper pour for sustained >3.7 W PCB-mount dissipation

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S); 14.61 mm × 10.16 mm footprint; 1.78 mm nominal height; RoHS-compliant matte tin plating over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level drive to fully enhance channel; 11 nC Q_gs defines Miller plateau timing
Drain (D)	High-side power output	Connected to exposed backside metal tab; must be soldered to large copper area for thermal management
Source (S)	Power return / reference node	Provides low-inductance return path; internal source inductance L_S = 7.5 nH affects switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	15 mJ E_AR enables reliable operation under short-circuit or overload without immediate failure
Dynamic dv/dt immunity	5.5 V/ns rating prevents false turn-on during high-slew-rate voltage transitions
Fast switching	11 ns t_d(on) + 44 ns t_r reduces switching losses in 100–500 kHz SMPS designs
PCB-mount power capability	3.7 W dissipation on 1" FR-4 board - eliminates need for discrete heatsink in medium-power apps
Lead (Pb)-free & halogen-free	Meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and RoHS Directive 2011/65/EU

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Driver High-Side
Use Scenario: 48 V input, 12 V/20 A output synchronous buck converter in telecom power shelf. IC Role / Device Role / Timing Role: Main high-side switching element handling 28 A peak current with 100 kHz PWM. Use Value: 0.077 Ω R_DS(on) limits conduction loss to <1.5 W; 230 mJ E_AS absorbs leakage inductance energy during dead-time.	Use Scenario: 24 V/15 A brushed motor control in automated gate actuator with regenerative braking. IC Role / Device Role / Timing Role: High-side switch controlling motor direction and enabling active freewheeling via body diode. Use Value: Fast 180 ns body diode t_rr minimizes reverse recovery loss; 175 °C T_J(max) sustains intermittent stall conditions.
Industrial AC-DC PFC Stage	UPS Inverter Half-Bridge Leg
Use Scenario: Boost PFC stage in 1 kW industrial UPS accepting 90–264 VAC input. IC Role / Device Role / Timing Role: Switching transistor in critical conduction mode (CRM) boost converter operating up to 150 kHz. Use Value: 5.5 V/ns dv/dt immunity prevents spurious turn-on from line noise; 72 nC Q_g compatible with standard gate drivers.	Use Scenario: Output inverter stage converting 380 VDC bus to 230 VAC for backup power delivery. IC Role / Device Role / Timing Role: Upper switch in half-bridge leg driving LC filter; coordinated with complementary low-side device. Use Value: Repetitive avalanche rating handles shoot-through fault energy; 1.0 °C/W R_thJC enables direct heatsink mounting for 150 W dissipation.

DC-DC Converter Primary Switch

Brushed DC Motor Driver High-Side

Use Scenario: 48 V input, 12 V/20 A output synchronous buck converter in telecom power shelf.

IC Role / Device Role / Timing Role: Main high-side switching element handling 28 A peak current with 100 kHz PWM.

Use Value: 0.077 Ω R_DS(on) limits conduction loss to <1.5 W; 230 mJ E_AS absorbs leakage inductance energy during dead-time.

Use Scenario: 24 V/15 A brushed motor control in automated gate actuator with regenerative braking.

IC Role / Device Role / Timing Role: High-side switch controlling motor direction and enabling active freewheeling via body diode.

Use Value: Fast 180 ns body diode t_rr minimizes reverse recovery loss; 175 °C T_J(max) sustains intermittent stall conditions.

Industrial AC-DC PFC Stage

UPS Inverter Half-Bridge Leg

Use Scenario: Boost PFC stage in 1 kW industrial UPS accepting 90–264 VAC input.

IC Role / Device Role / Timing Role: Switching transistor in critical conduction mode (CRM) boost converter operating up to 150 kHz.

Use Value: 5.5 V/ns dv/dt immunity prevents spurious turn-on from line noise; 72 nC Q_g compatible with standard gate drivers.

Use Scenario: Output inverter stage converting 380 VDC bus to 230 VAC for backup power delivery.

IC Role / Device Role / Timing Role: Upper switch in half-bridge leg driving LC filter; coordinated with complementary low-side device.

Use Value: Repetitive avalanche rating handles shoot-through fault energy; 1.0 °C/W R_thJC enables direct heatsink mounting for 150 W dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPbF	Same die, but TO-220 through-hole package; higher R_thJA (62 °C/W), no surface-mount thermal pad	Requires PCB through-holes and external heatsink; unsuitable for high-density SMT layouts	Select IRF540NPbF only when mechanical mounting constraints preclude D2PAK or when legacy TO-220 footprint reuse is required.
STP10NK50ZFP	Zener-protected superjunction MOSFET; 500 V V_DS, 0.58 Ω R_DS(on), lower Q_g (33 nC), but higher conduction loss at 28 A	Better for 400 V+ flyback or resonant converters; not suitable for 48 V/28 A low-loss primary switches	Choose STP10NK50ZFP for higher-voltage, lower-current ZVS/ZCS topologies where switching loss dominates; avoid for high-current 100 V applications.

Compared with IRF540NPbF and STP10NK50ZFP, SIHF540S-GE3 uniquely balances 100 V rating, ultra-low R_DS(on), and surface-mount thermal performance - making it optimal for space-constrained, high-current industrial power stages where PCB thermal management is prioritized over voltage headroom.

Availability

SIHF540S-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS inverters requiring stable component supply and long-term production continuity.

Supply support for SIHF540S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHF540S-GE3 belongs to Vishay's third-generation D2PAK power MOSFET family, engineered for high-current, surface-mount power conversion with emphasis on ruggedness, thermal efficiency, and manufacturability in high-volume SMT lines.

FAQ

What is the maximum continuous drain current for SIHF540S-GE3 at 100 °C case temperature?

The SIHF540S-GE3 supports 20 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation. Designers must ensure adequate copper pour or heatsinking to maintain T_C ≤ 100 °C when operating near this limit. The SIHF540S-GE3 datasheet specifies linear derating beyond this point at 1.0 W/°C.

Does SIHF540S-GE3 have integrated avalanche protection?

Yes, SIHF540S-GE3 is explicitly rated for repetitive avalanche operation with 15 mJ E_AR and single-pulse avalanche energy of 230 mJ. This ruggedization is built into the silicon structure and validated per JEDEC test methods. The SIHF540S-GE3 does not require external avalanche clamps in properly designed inductive switching circuits, provided pulse width and duty cycle remain within datasheet limits.

What is the gate threshold voltage range for SIHF540S-GE3?

The SIHF540S-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers. The SIHF540S-GE3 remains fully enhanced above 4.0 V, with R_DS(on) specified at V_GS = 10 V to guarantee low conduction loss across process and temperature variation.

Can SIHF540S-GE3 be used in parallel configurations?

Yes, SIHF540S-GE3 is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across multiple devices. The SIHF540S-GE3 datasheet confirms this feature, and layout best practices - such as matched gate trace lengths and Kelvin source connections - are recommended to minimize imbalance. Thermal coupling between paralleled SIHF540S-GE3 units further enhances stability.

What is the body diode reverse recovery time for SIHF540S-GE3?

The SIHF540S-GE3 body diode exhibits a typical reverse recovery time (t_rr) of 180 ns and maximum of 360 ns at T_J = 25 °C, I_F = 17 A, and dI/dt = 100 A/μs. This fast recovery characteristic reduces switching losses in freewheeling and synchronous rectification applications. The SIHF540S-GE3 also specifies Q_rr = 1.3–2.8 μC, enabling accurate loss calculation in high-frequency designs.

SIHF540S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 77mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHF540S-GE3 FAQ

1.How can I place an order for SIHF540S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF540S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF540S-GE3 reliable?

The price and inventory of SIHF540S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF540S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF540S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF540S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF540S-GE3?

SIHF540S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF540S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF540S-GE3?

For technical support, including SIHF540S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF540S-GE3 requirements.

6.How does Aetrix verify that SIHF540S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF540S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF540S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF540S-GE3?

All SIHF540S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF540S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF540S-GE3 part is unused and in its original packaging.

Return procedure for SIHF540S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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