Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix SIHF540STRL-GE3

Part No.:
SIHF540STRL-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSIHF540STRL-GE3.pdf
Description:
MOSFET N-CH 100V 28A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,669

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SIHF540STRL-GE3 from Vishay Siliconix is a 100 V, 28 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.077 Ω RDS(on) at VGS = 10 V, 72 nC total gate charge, and 175 °C maximum junction temperature - designed for high-current DC-DC converters, motor drives, and industrial power switching.

For engineers reviewing the SIHF540STRL-GE3 datasheet, SIHF540STRL-GE3 pinout, SIHF540STRL-GE3 application, or SIHF540STRL-GE3 equivalent, key selection criteria include avalanche ruggedness (230 mJ single-pulse EAS), fast switching (11 ns td(on), 44 ns tr), PCB-mount thermal performance (RthJA = 40 °C/W), and RoHS-compliant lead-free/halogen-free construction.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology to achieve low on-resistance while maintaining robust unclamped inductive switching capability. Its dynamic dv/dt rating of 5.5 V/ns and repetitive avalanche rating support reliable operation in hard-switched topologies without external snubbers.

The device integrates a fast-recovery body diode (trr = 180–360 ns, Qrr = 1.3–2.8 μC) and exhibits low internal inductance (LD = 4.5 nH, LS = 7.5 nH), enabling stable paralleling and reduced ringing in high-frequency power stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - supports 48 V and 96 V bus systems with margin for transients
RDS(on) @ VGS = 10 V 0.077 Ω - enables ≤2.2 W conduction loss at 17 A continuous drain current
Qg 72 nC - determines gate drive power requirement and switching speed trade-off
EAS 230 mJ - allows safe operation under unclamped inductive load conditions without external protection
TJ(max) +175 °C - permits high ambient operation in enclosed industrial enclosures
ID @ TC = 100 °C 20 A - defines usable current derating for thermally constrained PCB-mount designs
PD (PCB mount) 3.7 W - sets practical power limit when mounted on 1" FR-4 PCB without heatsink

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); standard JEDEC outline per document 73397.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control terminal Receives 10 V logic-level drive; requires <3.6 Ω gate resistance to avoid oscillation during fast switching
D (Drain) High-side power output Connected to exposed copper pad - must be routed to large thermal plane for heat dissipation
S (Source) Reference/return path Common node for gate drive return and current sensing; low-inductance layout critical for diode recovery stability

Key Features

Feature Design Value
Repetitive avalanche rated Enables reliable operation in inductive load switching without external clamping circuits
Dynamic dv/dt rating 5.5 V/ns - suppresses false turn-on during high-slew-rate voltage transients
Fast switching 11 ns turn-on delay + 44 ns rise time - reduces switching losses in 100–500 kHz SMPS designs
Low RDS(on) × Qg figure-of-merit 5.5 nC·Ω - balances conduction and switching loss for high-efficiency mid-power converters
RoHS-compliant, halogen-free Meets IPC-1752A material declaration requirements for industrial and automotive supply chains

Applications

DC-DC Converter Primary Switch Brushed DC Motor Driver

Use Scenario: 48 V input, 12 V/15 A output synchronous buck converter in telecom power shelf.

IC Role / Device Role / Timing Role: High-side main switch handling full load current with PWM-controlled duty cycle.

Use Value: 0.077 Ω RDS(on) limits conduction loss to 1.97 W at 17 A, supporting >94% efficiency at full load.

Use Scenario: H-bridge driver for 24 V, 15 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switching element with PWM-controlled direction and speed.

Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid deceleration without snubber network.

Industrial AC-DC PFC Stage UPS Inverter Output Stage

Use Scenario: Boost PFC switch in 1 kW industrial AC-DC front-end operating at 65 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost transistor with critical conduction mode control.

Use Value: 72 nC Qg enables clean gate drive with standard 1 A peak drivers; 175 °C rating sustains reliability under sustained overload.

Use Scenario: Half-bridge leg in 2 kVA online UPS inverter delivering 230 VAC sine-wave output.

IC Role / Device Role / Timing Role: High-current switching device in high-frequency SPWM stage.

Use Value: Body diode trr ≤ 360 ns and Qrr ≤ 2.8 μC minimize shoot-through risk and reverse recovery loss during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF540NPbF Same die, but TO-220 package; higher RthJC (1.5 °C/W vs. 1.0 °C/W); no surface-mount compatibility Requires through-hole PCB layout and mechanical heatsinking; unsuitable for dense SMT assemblies Select only when board space allows vertical heatsink mounting and reflow soldering is not required.
STP10NK50ZFP Zener-protected superjunction MOSFET; 500 V VDS, 0.58 Ω RDS(on); higher voltage rating but 7.5× higher on-resistance Better suited for universal-input offline SMPS (>300 V DC link); not optimal for 48–100 V bus systems Choose only if system requires >400 V blocking capability and can tolerate higher conduction loss.

Compared with IRF540NPbF and STP10NK50ZFP, SIHF540STRL-GE3 delivers superior thermal performance in SMT layouts, lower conduction loss in mid-voltage industrial power stages, and optimized gate charge for efficient 100–300 kHz switching - making it the preferred choice for space-constrained, high-reliability 100 V applications.

Availability

SIHF540STRL-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHF540STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHF540STRL-GE3 belongs to Vishay's third-generation D2PAK power MOSFET family, engineered for ruggedized switching in high-current, high-temperature industrial power conversion systems.

FAQ

What is the maximum continuous drain current for SIHF540STRL-GE3 at 100 °C case temperature?

The SIHF540STRL-GE3 supports 20 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under typical PCB-mount conditions and ensures long-term reliability without exceeding the 175 °C maximum junction temperature. The SIHF540STRL-GE3 maintains this rating across its full operating temperature range.

Does SIHF540STRL-GE3 have avalanche capability, and how is it rated?

Yes, the SIHF540STRL-GE3 is repetitively avalanche rated with 15 mJ EAR and single-pulse avalanche energy of 230 mJ (EAS). These values are measured under standardized conditions (VDD = 25 V, IAS = 28 A, TJ starting at 25 °C). The SIHF540STRL-GE3 leverages this ruggedness to withstand inductive switching stresses in motor drives and DC-DC converters without external protection components.

What is the gate threshold voltage range for SIHF540STRL-GE3, and is it compatible with 5 V logic?

The SIHF540STRL-GE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, confirming it is a standard-level MOSFET - not a logic-level device. It requires ≥10 V gate drive for full enhancement and minimal RDS(on). Driving the SIHF540STRL-GE3 with only 5 V will result in significantly elevated on-resistance and excessive conduction loss; a dedicated gate driver or level-shifter is necessary for microcontroller-based control.

How does the body diode performance of SIHF540STRL-GE3 impact its use in synchronous rectification?

The SIHF540STRL-GE3 features a body diode with trr = 180–360 ns and Qrr = 1.3–2.8 μC, which is relatively slow compared to dedicated Schottky or GaN devices. While usable in non-synchronous or freewheeling roles, the SIHF540STRL-GE3 is not recommended for high-frequency synchronous rectification where low Qrr is critical. Its body diode is best applied in low-duty-cycle, medium-frequency freewheeling paths - consistent with its design intent in the SIHF540STRL-GE3 datasheet.

What thermal resistance values apply to SIHF540STRL-GE3 in a standard PCB-mount configuration?

In a standard 1" square FR-4 PCB mount, the SIHF540STRL-GE3 exhibits RthJA = 40 °C/W and RthJC = 1.0 °C/W. These values assume proper copper pour under the exposed drain pad and define realistic thermal limits for layout design. The SIHF540STRL-GE3 achieves this performance via its D2PAK package's low-resistance thermal path from junction to case, enabling 3.7 W power dissipation without external heatsink - a key advantage over TO-220 alternatives.

SIHF540STRL-GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
72 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.7W (Ta), 150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

SIHF540STRL-GE3 FAQ

1.How can I place an order for SIHF540STRL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF540STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF540STRL-GE3 reliable?

The price and inventory of SIHF540STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF540STRL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF540STRL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF540STRL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF540STRL-GE3?

SIHF540STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF540STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF540STRL-GE3?

For technical support, including SIHF540STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF540STRL-GE3 requirements.

6.How does Aetrix verify that SIHF540STRL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF540STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF540STRL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF540STRL-GE3?

All SIHF540STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF540STRL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF540STRL-GE3 part is unused and in its original packaging.

Return procedure for SIHF540STRL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIHF540STRL-GE3 Tags

  • SIHF540STRL-GE3
  • SIHF540STRL-GE3 PDF
  • SIHF540STRL-GE3 Datasheet
  • SIHF540STRL-GE3 Specifications
  • SIHF540STRL-GE3 Images
  • Vishay Siliconix
  • Vishay Siliconix SIHF540STRL-GE3
  • Buy SIHF540STRL-GE3
  • SIHF540STRL-GE3 Price
  • SIHF540STRL-GE3 Distributor
  • SIHF540STRL-GE3 Supplier
  • SIHF540STRL-GE3 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER