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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF5N50D-E3

Name: SIHF5N50D-E3
Brand: Vishay Siliconix
SKU: SIHF5N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF5N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF5N50D-E3.pdf

Description:: MOSFET N-CH 500V 5.3A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF5N50D-E3 from Vishay Siliconix is a 500 V, 5.3 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in offline SMPS and industrial motor drives. It features 1.5 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and 23 mJ single-pulse avalanche energy rating - enabling robust operation in flyback and LLC resonant converters.

For engineers reviewing the SIHF5N50D-E3 datasheet, SIHF5N50D-E3 pinout, SIHF5N50D-E3 application, or SIHF5N50D-E3 equivalent, this device is selected for high-efficiency, cost-sensitive 50–200 W AC/DC power supplies where low conduction loss, fast switching, and body diode ruggedness are critical design requirements.

Technical Context

The SIHF5N50D-E3 employs a planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to achieve low area-specific on-resistance (R_DS(on) × die area) while maintaining 500 V breakdown voltage. Its 325 pF input capacitance (C_iss) and 6 pF reverse transfer capacitance (C_rss) support clean turn-on/turn-off transitions under 400 V bus conditions.

Designed for unclamped inductive switching (UIS), it sustains 23 mJ avalanche energy per pulse with no degradation when operated within its SOA limits. The integral body diode exhibits 1.2 V forward drop at 4 A and 320 ns reverse recovery time - suitable for synchronous rectification and freewheeling in non-isolated DC/DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus with 25 % margin for transient overvoltage in universal-input offline SMPS
R_DS(on) max	1.5 Ω at V_GS = 10 V - enables <1.9 W conduction loss at 3.5 A RMS in 65 kHz flyback primary switch
Q_g max	20 nC - allows efficient gate drive with standard 1 A peak drivers without excessive Miller-induced oscillation
E_AS	23 mJ - ensures reliable operation during output short-circuit or transformer saturation events
C_iss	325 pF - balances switching speed and EMI control in hard-switched topologies
V_GS(th)	3–5 V - provides clear logic-level turn-on margin above 2.5 V controller outputs
T_J range	−55 °C to +150 °C - supports sealed industrial enclosures and high-ambient welding power supplies

Pinout & Package

TO-220 FULLPAK package with exposed drain pad for enhanced thermal performance; 3-pin through-hole mounting; 4.1 °C/W junction-to-case thermal resistance enables 28.8 W continuous dissipation with minimal heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V gate drive to fully enhance channel; 100 nA leakage ensures stable off-state in high-impedance bias networks
D (Drain)	High-side power terminal	Connected to primary winding or HV rail; electrically tied to metal tab for direct heatsink coupling
S (Source)	Reference node	Serves as return path for load current and gate drive reference; requires low-inductance PCB layout to minimize switching noise

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	30 Ω·nC - reduces combined conduction and switching losses in 65–100 kHz SMPS designs
Avalanche-rated (UIS)	23 mJ - eliminates need for external snubbers in inductive load switching applications
Body diode ruggedness	Rated for repetitive ISD ≤ ID - supports bidirectional current flow in half-bridge freewheeling without secondary diode
Low C_rss/C_iss ratio	6 pF / 325 pF = 0.018 - minimizes Miller effect and improves gate drive stability during dV/dt transients

Applications

Server Power Supply	Plasma Display Power
Use Scenario: Primary-side switch in 12 V/24 V auxiliary rail flyback converter for rack-mounted servers. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 375 V DC bus to isolated secondary winding. Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g enable >89 % efficiency at full load with minimal thermal derating.	Use Scenario: Sustaining switch in plasma display panel (PDP) X- and Y-sustain circuits operating at 200–300 kHz. IC Role / Device Role / Timing Role: Fast-turning high-voltage switch driving resonant tank with repetitive 400 V pulses. Use Value: 24 V/ns dV/dt rating and 320 ns trr body diode ensure clean zero-voltage switching transitions without shoot-through.
Induction Heating Inverter	Battery Charger Stage
Use Scenario: Half-bridge leg switch in 20–50 kHz resonant inverter for domestic induction cooktops. IC Role / Device Role / Timing Role: Medium-power switching transistor handling 15–20 A peak currents with high dv/dt stress. Use Value: 23 mJ E_AS withstands repeated inductive kickback during zero-crossing detection faults.	Use Scenario: Primary-side switch in 300–400 W offline battery charger for e-bikes and power tools. IC Role / Device Role / Timing Role: Main power switch in quasi-resonant (QR) flyback topology delivering regulated 24 V/12 A output. Use Value: −55 °C to +150 °C operating range ensures reliability across outdoor storage and high-temperature charging environments.

Server Power Supply

Plasma Display Power

Use Scenario: Primary-side switch in 12 V/24 V auxiliary rail flyback converter for rack-mounted servers.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from 375 V DC bus to isolated secondary winding.

Use Value: 1.5 Ω R_DS(on) and 20 nC Q_g enable >89 % efficiency at full load with minimal thermal derating.

Use Scenario: Sustaining switch in plasma display panel (PDP) X- and Y-sustain circuits operating at 200–300 kHz.

IC Role / Device Role / Timing Role: Fast-turning high-voltage switch driving resonant tank with repetitive 400 V pulses.

Use Value: 24 V/ns dV/dt rating and 320 ns trr body diode ensure clean zero-voltage switching transitions without shoot-through.

Induction Heating Inverter

Battery Charger Stage

Use Scenario: Half-bridge leg switch in 20–50 kHz resonant inverter for domestic induction cooktops.

IC Role / Device Role / Timing Role: Medium-power switching transistor handling 15–20 A peak currents with high dv/dt stress.

Use Value: 23 mJ E_AS withstands repeated inductive kickback during zero-crossing detection faults.

Use Scenario: Primary-side switch in 300–400 W offline battery charger for e-bikes and power tools.

IC Role / Device Role / Timing Role: Main power switch in quasi-resonant (QR) flyback topology delivering regulated 24 V/12 A output.

Use Value: −55 °C to +150 °C operating range ensures reliability across outdoor storage and high-temperature charging environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.6 Ω, Q_g = 22 nC, TO-220FP package	Higher R_DS(on) and gate charge increase conduction and switching losses by ~8 % at 2.5 A	Acceptable for lower-power (<150 W) designs where thermal margin is available
IRFBC40APBF	500 V, 6.1 A, R_DS(on) = 1.2 Ω, Q_g = 34 nC, TO-220AB package	Lower R_DS(on) improves conduction loss but higher Q_g demands stronger gate driver and increases EMI risk	Preferred where lower on-resistance is prioritized over gate drive simplicity and EMI control

Compared with STP5NK50ZFP and IRFBC40APBF, the SIHF5N50D-E3 delivers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness - making it especially suited for cost-sensitive, thermally constrained 100–250 W industrial and consumer power supplies requiring field reliability without gate drive complexity.

Availability

SIHF5N50D-E3 is available at Aetrix Electronics and suitable for server power supplies, plasma display sustain circuits, induction heating inverters, and battery charger stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHF5N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The D Series Power MOSFET product line targets high-voltage switching in offline AC/DC conversion, motor control, and industrial power systems - emphasizing ruggedness, low FOM, and manufacturability in TO-220 FULLPAK and similar packages.

FAQ

What is the maximum continuous drain current rating for SIHF5N50D-E3 at 100 °C case temperature?

The SIHF5N50D-E3 has a continuous drain current rating of 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied when designing heatsink solutions for sustained high-load operation. The SIHF5N50D-E3 maintains safe operation up to 150 °C junction temperature under these conditions.

Does SIHF5N50D-E3 support logic-level gate drive?

No, the SIHF5N50D-E3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, and it is characterized for full enhancement at V_GS = 10 V. While it may partially turn on with 5 V drive, R_DS(on) remains significantly higher than rated - the SIHF5N50D-E3 requires a 10 V gate drive for guaranteed 1.5 Ω on-resistance and optimal switching performance.

What is the thermal resistance from junction to case for SIHF5N50D-E3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for SIHF5N50D-E3 is 4.1 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to the TO-220 FULLPAK package with proper mounting torque (0.6 Nm for M3 screw) and thermal interface material, enabling calculation of junction temperature rise under defined power dissipation conditions. The SIHF5N50D-E3 achieves this low R_thJC via direct metal tab contact to the drain die.

Is SIHF5N50D-E3 lead-free and RoHS-compliant?

Yes, the SIHF5N50D-E3 is lead-free and complies with RoHS Directive 2011/65/EU, as confirmed by the "Lead (Pb)-free" designation in the Ordering Information section and Vishay's material compliance documentation (see www.vishay.com/doc?99912). The "-E3" suffix explicitly denotes lead-free, halogen-free, and RoHS-compliant packaging for the SIHF5N50D-E3.

Can SIHF5N50D-E3 be used in avalanche mode repeatedly?

The SIHF5N50D-E3 is rated for single-pulse avalanche energy (E_AS) of 23 mJ, but the datasheet does not specify repetitive avalanche capability. Operation in repetitive avalanche mode is not recommended unless validated by the designer under actual circuit conditions - the SIHF5N50D-E3 is intended for controlled switching with appropriate snubbing or clamping, not sustained repetitive avalanche stress.

SIHF5N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 325 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF5N50D-E3 FAQ

1.How can I place an order for SIHF5N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF5N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF5N50D-E3 reliable?

The price and inventory of SIHF5N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF5N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHF5N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF5N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF5N50D-E3?

SIHF5N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF5N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF5N50D-E3?

For technical support, including SIHF5N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF5N50D-E3 requirements.

6.How does Aetrix verify that SIHF5N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF5N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF5N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHF5N50D-E3?

All SIHF5N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF5N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF5N50D-E3 part is unused and in its original packaging.

Return procedure for SIHF5N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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