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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF6N40D-E3

Name: SIHF6N40D-E3
Brand: Vishay Siliconix
SKU: SIHF6N40D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF6N40D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF6N40D-E3.pdf

Description:: MOSFET N-CH 400V 6A TO220

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Product details

Overview

SIHF6N40D-E3 from Vishay Siliconix is a 400 V, 6 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring 1.0 Ω max R_DS(on) at V_GS = 10 V, 18 nC max total gate charge, and 104 mJ single-pulse avalanche energy rating - designed for high-voltage switching in offline SMPS, industrial motor drives, and welding equipment.

For engineers reviewing the SIHF6N40D-E3 datasheet, SIHF6N40D-E3 pinout, SIHF6N40D-E3 application, or SIHF6N40D-E3 equivalent, key selection criteria include its 400 V V_DS rating, low 0.85 Ω typical R_DS(on), fast 12–24 ns turn-on delay, rugged body diode with 236 ns reverse recovery time, and TO-220 FULLPAK thermal performance (R_thJC = 4.1 °C/W).

Technical Context

This MOSFET employs planar vertical DMOS architecture optimized for high-voltage hard-switching applications. Its low C_iss (311 pF typ) and minimized Q_gd/Q_g ratio (4/18 nC) reduce capacitive losses and improve voltage-dependent switching efficiency under 400 V bus conditions.

The device integrates an avalanche-rated body diode with 1.2 V forward drop at 3 A and 24 A pulsed diode current capability. Thermal design leverages the TO-220 FULLPAK's exposed drain copper tab for direct heatsink mounting, enabling 30 W continuous dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	400 V - supports 380 VAC rectified input designs with 20 % margin
R_DS(on) max @ 10 V	1.0 Ω - limits conduction loss to ≤9 W at 3 A DC in TO-220 FULLPAK
Q_g max	18 nC - enables efficient 50–100 kHz switching with standard 12 V gate drivers
E_AS	104 mJ - withstands unclamped inductive turn-off events in motor drive snubbers
I_D cont @ T_C=100 °C	4 A - defines usable current envelope in thermally constrained enclosures
V_SD @ 3 A	1.2 V - sets forward conduction loss during synchronous rectification or freewheeling
trr	236 ns - determines minimum dead-time requirement in half-bridge topologies

Pinout & Package

TO-220 FULLPAK package with isolated mounting tab (drain-connected), 3-pin through-hole outline, 15.87 mm × 10.10 mm × 13.10 mm footprint, and 4.1 °C/W junction-to-case thermal resistance. Mounting torque: 0.6 N·m (M3 screw).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 1.9 Ω gate input resistance minimizes ringing with 9.1 Ω external series resistor
D (Drain)	High-side power terminal	Connected to exposed copper tab; electrically tied to heatsink - requires insulation if heatsink is grounded
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low figure-of-merit (R_DS(on) × Q_g)	≤9 Ω·nC - balances conduction and switching losses in 50–100 kHz SMPS
Avalanche energy rated (UIS)	104 mJ - eliminates need for external clamping in inductive load switching
High body diode ruggedness	24 A pulsed I_SM, 236 ns t_rr - sustains repetitive freewheeling in motor control without degradation
Low input capacitance (C_iss)	311 pF typ - reduces gate drive power and EMI generation at high dV/dt (24 V/ns)
RoHS-compliant lead-free termination	E3 suffix denotes matte tin plating per JEDEC J-STD-609 - compatible with Pb-free reflow profiles

Applications

Server Power Supply	Induction Heating Inverter
Use Scenario: Primary-side switching in 80+ Gold-certified 1 kW telecom rectifier with 380 VDC bus. IC Role / Device Role / Timing Role: High-voltage switch in LLC resonant half-bridge; handles 400 V blocking and 6 A peak primary current. Use Value: 1.0 Ω R_DS(on) and 18 nC Q_g enable >95 % efficiency at 100 kHz while maintaining <85 °C case temperature.	Use Scenario: Half-bridge leg in 20 kHz induction cooker driver delivering 3.5 kW to cooking coil. IC Role / Device Role / Timing Role: Fast-switching power switch with controlled dV/dt (24 V/ns) to minimize EMI in magnetically noisy environment. Use Value: 236 ns reverse recovery time and 104 mJ avalanche rating prevent failure during zero-crossing commutation stress.
Industrial Motor Drive	Battery Charger Output Stage
Use Scenario: Inverter output stage in 3-phase 750 W BLDC driver for HVAC blower system. IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge; conducts continuous 4 A with 125 °C junction limit. Use Value: 4 A continuous rating at T_C = 100 °C ensures stable operation in sealed metal enclosures without forced air.	Use Scenario: Secondary-side synchronous rectifier in 48 V/20 A telecom battery charger with active clamp flyback. IC Role / Device Role / Timing Role: Freewheeling diode replacement; body diode conducts during dead time before gate turn-on. Use Value: 1.2 V V_SD and 24 A I_SM reduce conduction loss by 40 % vs. Schottky diode, improving thermal margin at full load.

Server Power Supply

Induction Heating Inverter

Use Scenario: Primary-side switching in 80+ Gold-certified 1 kW telecom rectifier with 380 VDC bus.

IC Role / Device Role / Timing Role: High-voltage switch in LLC resonant half-bridge; handles 400 V blocking and 6 A peak primary current.

Use Value: 1.0 Ω R_DS(on) and 18 nC Q_g enable >95 % efficiency at 100 kHz while maintaining <85 °C case temperature.

Use Scenario: Half-bridge leg in 20 kHz induction cooker driver delivering 3.5 kW to cooking coil.

IC Role / Device Role / Timing Role: Fast-switching power switch with controlled dV/dt (24 V/ns) to minimize EMI in magnetically noisy environment.

Use Value: 236 ns reverse recovery time and 104 mJ avalanche rating prevent failure during zero-crossing commutation stress.

Industrial Motor Drive

Battery Charger Output Stage

Use Scenario: Inverter output stage in 3-phase 750 W BLDC driver for HVAC blower system.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge; conducts continuous 4 A with 125 °C junction limit.

Use Value: 4 A continuous rating at T_C = 100 °C ensures stable operation in sealed metal enclosures without forced air.

Use Scenario: Secondary-side synchronous rectifier in 48 V/20 A telecom battery charger with active clamp flyback.

IC Role / Device Role / Timing Role: Freewheeling diode replacement; body diode conducts during dead time before gate turn-on.

Use Value: 1.2 V V_SD and 24 A I_SM reduce conduction loss by 40 % vs. Schottky diode, improving thermal margin at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK40ZFP	400 V, 5.5 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220FP package	Higher R_DS(on) and gate charge increase conduction and switching losses by ~15 %	Acceptable where lower cost outweighs 0.2 Ω R_DS(on) penalty and layout accommodates same-outline TO-220FP
IXTP6N40P	400 V, 6 A, R_DS(on) = 1.0 Ω, Q_g = 20 nC, TO-220 package (non-FULLPAK)	No exposed drain tab; R_thJC = 3.5 °C/W but requires insulating washer for heatsink mounting	Preferred when electrical isolation between drain and heatsink is mandatory, despite 0.6 °C/W higher thermal resistance

Compared with STP6NK40ZFP and IXTP6N40P, SIHF6N40D-E3 delivers superior thermal performance via its FULLPAK drain-tab interface and lowest Q_g/R_DS(on) ratio - making it optimal for space-constrained, high-efficiency 400 V switching where heatsink coupling and gate drive simplicity are critical.

Availability

SIHF6N40D-E3 is available at Aetrix Electronics and suitable for server power supplies, induction heating inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHF6N40D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The D Series Power MOSFETs, including SIHF6N40D-E3, were engineered for high-voltage hard-switching applications demanding avalanche robustness, low gate charge, and thermal efficiency in compact packages.

FAQ

What is the maximum continuous drain current for SIHF6N40D-E3 at 100 °C case temperature?

The SIHF6N40D-E3 supports 4 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220 FULLPAK package under sustained high-temperature operation and must be validated against actual PCB layout and heatsink performance in the final design. The SIHF6N40D-E3 datasheet confirms this rating with linear derating beyond 100 °C.

Does SIHF6N40D-E3 have avalanche capability, and how is it rated?

Yes, SIHF6N40D-E3 is fully rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 104 mJ at T_J = 25 °C. This rating was measured per JEDEC standard with V_DD = 50 V, L = 2.3 mH, R_g = 25 Ω, and I_AS = 9.5 A. The SIHF6N40D-E3's rugged body diode and optimized silicon structure ensure repeatable avalanche performance without parameter shift.

What is the gate threshold voltage range for SIHF6N40D-E3, and how does it affect drive requirements?

The SIHF6N40D-E3 has a gate-source threshold voltage (V_GS(th)) range of 3 V to 5 V at I_D = 250 μA, confirming it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. This means the SIHF6N40D-E3 is not logic-level compatible and must be driven with a dedicated gate driver capable of sourcing/sinking ≥18 nC at 10–15 V to achieve specified R_DS(on) and switching speed.

How does the TO-220 FULLPAK package of SIHF6N40D-E3 differ from standard TO-220 in thermal performance?

The TO-220 FULLPAK package used by SIHF6N40D-E3 features an exposed copper drain tab that serves as both the electrical drain connection and primary thermal path to the heatsink - eliminating the need for insulating washers and reducing thermal resistance to 4.1 °C/W (junction-to-case). In contrast, standard TO-220 requires isolation hardware and typically achieves only 3.5–4.5 °C/W depending on mounting quality. The SIHF6N40D-E3 leverages this advantage for higher power density.

Is SIHF6N40D-E3 suitable for synchronous rectification, and what body diode parameters support this use?

Yes, SIHF6N40D-E3 is suitable for synchronous rectification due to its characterized body diode: V_SD = 1.2 V at 3 A and 25 °C, t_rr = 236 ns, Q_rr = 1.1 μC, and I_SM = 24 A. These parameters allow predictable timing control and low-loss freewheeling in flyback and LLC converters. The SIHF6N40D-E3's low Q_gd/Q_g ratio further improves controllability during diode conduction transitions.

SIHF6N40D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 311 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF6N40D-E3 FAQ

1.How can I place an order for SIHF6N40D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF6N40D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF6N40D-E3 reliable?

The price and inventory of SIHF6N40D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF6N40D-E3 is usually 5 days.

3.What payment methods are accepted for SIHF6N40D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF6N40D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF6N40D-E3?

SIHF6N40D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF6N40D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF6N40D-E3?

For technical support, including SIHF6N40D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF6N40D-E3 requirements.

6.How does Aetrix verify that SIHF6N40D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF6N40D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF6N40D-E3 meets industry standards.

7.What is the process for return or replacement of SIHF6N40D-E3?

All SIHF6N40D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF6N40D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF6N40D-E3 part is unused and in its original packaging.

Return procedure for SIHF6N40D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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