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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF6N65E-GE3

Name: SIHF6N65E-GE3
Brand: Vishay Siliconix
SKU: SIHF6N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF6N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF6N65E-GE3.pdf

Description:: MOSFET N-CH 650V 7A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF6N65E-GE3 from Vishay Siliconix is a 650 V, 7 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in offline SMPS and PFC stages. It delivers R_DS(on) = 0.6 Ω at V_GS = 10 V, Q_g = 48 nC max, and avalanche-rated (E_AS = 56 mJ), enabling efficient hard-switched flyback and boost converters in telecom rectifiers.

For engineers reviewing the SIHF6N65E-GE3 datasheet, SIHF6N65E-GE3 pinout, SIHF6N65E-GE3 application, or SIHF6N65E-GE3 equivalent, key selection criteria include its 650 V V_DS, low gate charge for reduced drive loss, TO-220 FULLPAK thermal performance (R_thJC = 4.0 °C/W), and UIS-rated ruggedness for unclamped inductive switching.

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized charge balance for low R_DS(on) × Q_g figure-of-merit (FOM). Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode supports freewheeling in discontinuous conduction mode (DCM) topologies, with t_rr = 237 ns and Q_rr = 2.2 μC at T_J = 25 °C - parameters critical for minimizing commutation loss and EMI in high-frequency PFC circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC input rectified to ~560 V DC bus with margin for surge and ringing
R_DS(on) max	0.6 Ω at V_GS = 10 V, I_D = 3 A - enables <1.8 W conduction loss at 3 A, suitable for 100–300 W power stages
Q_g max	48 nC - reduces gate drive power and allows use of low-cost 10 V gate drivers without excessive dissipation
E_AS	56 mJ - rated for single-pulse unclamped inductive switching, enhancing reliability in flyback snubberless designs
R_thJC	4.0 °C/W - enables 31 W continuous power dissipation with modest heatsinking (e.g., 20 °C rise at 25 W)
I_D cont @ T_C = 100 °C	5 A - defines usable current limit in thermally constrained enclosures such as server PSUs
C_iss	820 pF typical - impacts gate drive loop stability and Miller effect during high dV/dt transitions

Pinout & Package

TO-220 FULLPAK package with exposed drain tab for enhanced thermal conduction and mechanical robustness; lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; requires <48 nC charge for full turn-on
D (Drain)	High-side power output	Connected to HV DC bus (up to 650 V); electrically tied to metal tab for low-inductance heat path
S (Source)	Power return / reference node	Common return for load current and gate driver ground; source inductance directly affects switching speed and ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Enables high-efficiency operation in 100–300 kHz SMPS by minimizing combined conduction and switching losses
Avalanche energy rating (E_AS)	56 mJ single-pulse capability improves system robustness against inductive kickback without external clamping
Ultra-low Q_gd/Q_g ratio	~23 % (11/48 nC) reduces Miller plateau duration, enabling faster, more controllable turn-off in hard-switched topologies
Low C_iss and C_oss	820 pF C_iss and 40 pF C_oss minimize capacitive loading on gate driver and reduce switching node oscillation
Body diode t_rr and Q_rr	237 ns t_rr and 2.2 μC Q_rr support DCM PFC operation with predictable reverse recovery behavior

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switch in 80+ Gold-certified 500 W server PSU using active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100–200 kHz switching frequency. Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >94 % efficiency at full load while meeting thermal limits on compact PCBs.	Use Scenario: Boost PFC stage in -48 V telecom rectifier converting 230 V AC input to 400 V DC bus. IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: Avalanche rating and low Q_rr ensure stable operation under line transients and light-load conditions without diode stress.
Solar PV Inverters	Industrial Motor Drives
Use Scenario: DC-DC isolation stage in string-level solar microinverter interfacing PV panel output (~60–150 V) to H-bridge inverter. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck or flyback regulator feeding gate driver supply rails. Use Value: 650 V V_DS provides margin for 1000 V PV open-circuit voltage surges; TO-220 FULLPAK simplifies thermal management in sealed enclosures.	Use Scenario: Brake chopper switch in 3 kW industrial servo drive dissipating regenerative energy into braking resistor. IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration events. Use Value: 56 mJ E_AS rating handles repetitive inductive energy dumps without derating; 5 A continuous rating supports 10 s duty cycles.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switch in 80+ Gold-certified 500 W server PSU using active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus with 100–200 kHz switching frequency.

Use Value: 0.6 Ω R_DS(on) and 48 nC Q_g enable >94 % efficiency at full load while meeting thermal limits on compact PCBs.

Use Scenario: Boost PFC stage in -48 V telecom rectifier converting 230 V AC input to 400 V DC bus.

IC Role / Device Role / Timing Role: Critical switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: Avalanche rating and low Q_rr ensure stable operation under line transients and light-load conditions without diode stress.

Solar PV Inverters

Industrial Motor Drives

Use Scenario: DC-DC isolation stage in string-level solar microinverter interfacing PV panel output (~60–150 V) to H-bridge inverter.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck or flyback regulator feeding gate driver supply rails.

Use Value: 650 V V_DS provides margin for 1000 V PV open-circuit voltage surges; TO-220 FULLPAK simplifies thermal management in sealed enclosures.

Use Scenario: Brake chopper switch in 3 kW industrial servo drive dissipating regenerative energy into braking resistor.

IC Role / Device Role / Timing Role: Unidirectional energy dump switch activated during deceleration events.

Use Value: 56 mJ E_AS rating handles repetitive inductive energy dumps without derating; 5 A continuous rating supports 10 s duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DS, R_DS(on) = 0.75 Ω, Q_g = 32 nC, TO-220FP package (no exposed drain)	Limited to ≤400 V DC bus; lower Q_g but higher R_DS(on) increases conduction loss above 2 A	Prefer when gate drive power is critical and bus voltage stays below 450 V; avoid for 650 V designs requiring avalanche margin
IXTH6N65X2	650 V V_DS, R_DS(on) = 0.55 Ω, Q_g = 34 nC, TO-247AC package	Lower R_DS(on) and Q_g, but larger footprint and higher cost; no FULLPAK thermal advantage	Choose for highest efficiency in space-unconstrained industrial inverters; SIHF6N65E-GE3 preferred where TO-220 footprint and thermal coupling are prioritized

Compared with STP6NK60ZFP and IXTH6N65X2, SIHF6N65E-GE3 uniquely balances 650 V rating, TO-220 FULLPAK thermal performance (R_thJC = 4.0 °C/W), and avalanche ruggedness - making it optimal for cost-sensitive, thermally constrained telecom and server power supplies where layout area and reliability under transient stress are decisive.

Availability

SIHF6N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for SIHF6N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHF6N65E-GE3 belongs to Vishay's E Series high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in offline AC-DC conversion and industrial power systems.

FAQ

What is the maximum continuous drain current for SIHF6N65E-GE3 at 100 °C case temperature?

The SIHF6N65E-GE3 supports 5 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 7 A rating at T_C = 25 °C and must be validated with actual heatsink performance and ambient conditions in the final design. The SIHF6N65E-GE3's R_thJC = 4.0 °C/W enables this current level with appropriate thermal interface and finned aluminum heatsinking.

Does SIHF6N65E-GE3 have avalanche capability, and how is it rated?

Yes, the SIHF6N65E-GE3 is avalanche energy rated with E_AS = 56 mJ (single-pulse, test condition: V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2 A). This rating confirms ruggedness against unclamped inductive switching events common in flyback and resonant converters. The SIHF6N65E-GE3's UIS capability is integral to its qualification and does not require external snubbers in many standard topologies.

What is the gate threshold voltage range for SIHF6N65E-GE3, and why does it matter?

The SIHF6N65E-GE3 has a gate threshold voltage V_GS(th) of 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin to prevent spurious conduction from dv/dt coupling. The SIHF6N65E-GE3 is not a logic-level device; operation below 8 V V_GS results in significantly increased R_DS(on) and must be avoided for full performance.

How does the TO-220 FULLPAK package of SIHF6N65E-GE3 improve thermal performance over standard TO-220?

The TO-220 FULLPAK package used by SIHF6N65E-GE3 features an exposed copper drain tab that serves as both electrical connection and primary thermal path, achieving R_thJC = 4.0 °C/W - up to 30 % better than standard insulated TO-220 variants. This allows the SIHF6N65E-GE3 to dissipate 31 W continuously with minimal heatsink mass, critical for dense server and telecom power modules where airflow and board space are constrained.

Can SIHF6N65E-GE3 be used in PFC boost circuits, and what body diode parameters support this?

Yes, the SIHF6N65E-GE3 is widely deployed in continuous conduction mode (CCM) PFC boost stages. Its body diode exhibits t_rr = 237 ns and Q_rr = 2.2 μC at T_J = 25 °C, IS = 3 A, enabling predictable reverse recovery with low associated loss and EMI. The SIHF6N65E-GE3's low Q_gd/Q_g ratio further minimizes shoot-through risk during diode commutation, supporting stable PFC operation across universal AC input ranges.

SIHF6N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 820 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF6N65E-GE3 FAQ

1.How can I place an order for SIHF6N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF6N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF6N65E-GE3 reliable?

The price and inventory of SIHF6N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF6N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF6N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF6N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF6N65E-GE3?

SIHF6N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF6N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF6N65E-GE3?

For technical support, including SIHF6N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF6N65E-GE3 requirements.

6.How does Aetrix verify that SIHF6N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF6N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF6N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF6N65E-GE3?

All SIHF6N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF6N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF6N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHF6N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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