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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF7N60E-E3

Name: SIHF7N60E-E3
Brand: Vishay Siliconix
SKU: SIHF7N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF7N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF7N60E-E3.pdf

Description:: MOSFET N-CH 600V 7A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF7N60E-E3 from Vishay Siliconix is a 600 V, 7 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in offline SMPS and PFC stages. It features R_DS(on) ≤ 0.6 Ω at V_GS = 10 V, Q_g ≤ 40 nC, and avalanche-rated (E_AS = 43 mJ), enabling efficient hard-switched operation in telecom rectifiers and solar inverters.

For engineers reviewing the SIHF7N60E-E3 datasheet, SIHF7N60E-E3 pinout, SIHF7N60E-E3 application, or SIHF7N60E-E3 equivalent, key selection criteria include its 600 V V_DS rating, low gate charge for reduced drive loss, TO-220 FULLPAK thermal performance (R_thJC = 4.0 °C/W), and body diode recovery characteristics (t_rr = 230 ns, Q_rr = 1.9 μC) critical for ZVS/ZCS design validation.

Technical Context

This MOSFET employs planar high-voltage silicon technology with optimized cell pitch and gate oxide thickness to achieve balanced conduction and switching losses. Its low C_iss (680 pF typ.) and ultra-low Q_gd/Q_g ratio (9/40 nC) support fast, controllable turn-on/turn-off transitions under 480 V bus conditions.

The integral body diode is rated for continuous 7 A source-drain current and exhibits controlled reverse recovery (dI/dt = 100 A/μs, I_RRM = 14 A) - essential for minimizing voltage overshoot in bridge-leg configurations used in industrial motor drives and induction heating inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input rectified to ~565 V DC with 6% margin for line surges in universal-input SMPS
R_DS(on) max @ 10 V	0.6 Ω - delivers ≤ 14.7 W conduction loss at 7 A, enabling thermally constrained PCB layouts
Q_g max	40 nC - reduces gate driver power demand and enables use of low-cost bipolar drivers in cost-sensitive PFC designs
E_AS	43 mJ - withstands unclamped inductive switching events without failure, critical for relay/snubberless flyback designs
t_r/t_f	13–26 ns / 14–28 ns - ensures clean edge control in 100–300 kHz switching applications with minimal EMI generation
R_thJC	4.0 °C/W - allows 25 W dissipation with 100 °C case temperature rise, supporting heatsink-free operation up to ~15 W
V_GS(th)	2–4 V - provides clear logic-level compatibility while avoiding spurious turn-on from noise in noisy industrial environments

Pinout & Package

TO-220 FULLPAK package with exposed drain tab for direct heatsinking; 3-pin through-hole configuration with G-D-S pin order (viewed from front, leads down).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V drive for full enhancement; requires < 100 nA leakage handling in high-impedance gate networks
D (Drain)	High-side power terminal	Connected to exposed copper tab - must be electrically isolated from heatsink unless referenced to same potential
S (Source)	Power return and reference node	Serves as local ground for gate driver; carries full load current and body diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	24 Ω·nC - directly improves efficiency in 100–250 kHz hard-switched topologies by reducing combined conduction + switching loss
Avalanche energy rating	43 mJ single-pulse - eliminates need for external clamping in non-resonant flyback and forward converters
Body diode t_rr and Q_rr	230 ns / 1.9 μC - enables reliable synchronous rectification in LLC half-bridge secondaries without snubbers
Low C_iss and C_oss	680 pF / 39 pF - minimizes Miller effect and improves gate drive stability in high-dV/dt (>70 V/ns) environments
Lead (Pb)-free and halogen-free	E3 suffix - complies with RoHS 2011/65/EU and JEDEC JS709B, suitable for automotive and medical end equipment

Applications

Server Power Supply	Photovoltaic Inverter
Use Scenario: Primary-side switch in active clamp forward converter for 1 kW telecom rectifier. IC Role / Device Role / Timing Role: High-voltage switching element handling 400–500 V DC bus with 200 kHz PWM. Use Value: Low Q_g enables efficient gate driving with discrete BJT-based drivers; avalanche rating protects against transformer leakage inductance spikes.	Use Scenario: DC-link switch in string-level PV inverter H-bridge stage. IC Role / Device Role / Timing Role: Main power switch operating at 16–20 kHz with bidirectional body diode conduction during freewheeling. Use Value: Controlled t_rr and low Q_rr reduce switching losses and EMI during zero-crossing transitions, improving inverter efficiency above 98.2%.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter feeding 0.75 kW induction motor. IC Role / Device Role / Timing Role: Hard-switched power device in 4–8 kHz V/f control topology with regenerative braking. Use Value: R_thJC = 4.0 °C/W allows direct mounting to shared heatsink with adjacent devices; dV/dt immunity (70 V/ns) prevents false triggering in noisy factory environments.	Use Scenario: Resonant switch in electronic fluorescent ballast operating above lamp ignition voltage (~600 V peak). IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) resonant switch sustaining repetitive 600 V drain stress during lamp warm-up. Use Value: 600 V V_DS rating with 575 V derated limit at -25 °C ensures margin during cold-start overvoltage transients.

Server Power Supply

Photovoltaic Inverter

Use Scenario: Primary-side switch in active clamp forward converter for 1 kW telecom rectifier.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400–500 V DC bus with 200 kHz PWM.

Use Value: Low Q_g enables efficient gate driving with discrete BJT-based drivers; avalanche rating protects against transformer leakage inductance spikes.

Use Scenario: DC-link switch in string-level PV inverter H-bridge stage.

IC Role / Device Role / Timing Role: Main power switch operating at 16–20 kHz with bidirectional body diode conduction during freewheeling.

Use Value: Controlled t_rr and low Q_rr reduce switching losses and EMI during zero-crossing transitions, improving inverter efficiency above 98.2%.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverter feeding 0.75 kW induction motor.

IC Role / Device Role / Timing Role: Hard-switched power device in 4–8 kHz V/f control topology with regenerative braking.

Use Value: R_thJC = 4.0 °C/W allows direct mounting to shared heatsink with adjacent devices; dV/dt immunity (70 V/ns) prevents false triggering in noisy factory environments.

Use Scenario: Resonant switch in electronic fluorescent ballast operating above lamp ignition voltage (~600 V peak).

IC Role / Device Role / Timing Role: High-frequency (25–65 kHz) resonant switch sustaining repetitive 600 V drain stress during lamp warm-up.

Use Value: 600 V V_DS rating with 575 V derated limit at -25 °C ensures margin during cold-start overvoltage transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK60ZFP	600 V, 6.5 A, R_DS(on) = 0.75 Ω, Q_g = 35 nC, TO-220FP package	Higher R_DS(on) increases conduction loss by ~25%; identical avalanche rating (43 mJ)	Preferred where lower gate charge is less critical than cost; not drop-in due to different thermal pad layout
IRFBC40APBF	600 V, 6.2 A, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220AB package	Higher R_DS(on) and no specified t_rr/Q_rr; lacks avalanche rating documentation	Acceptable for non-avalanche-critical linear or low-frequency switching; requires additional snubber design

Compared with STP7NK60ZFP and IRFBC40APBF, SIHF7N60E-E3 offers lower R_DS(on) and verified body diode recovery specs - making it preferable for high-efficiency, high-reliability PFC and inverter stages where thermal headroom and EMI control are design constraints.

Availability

SIHF7N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, photovoltaic inverters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for SIHF7N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The E Series power MOSFETs - including SIHF7N60E-E3 - were engineered for high-voltage, medium-current switching in offline power conversion, emphasizing low FOM, rugged avalanche capability, and consistent body diode performance across temperature.

FAQ

What is the maximum continuous drain current rating for SIHF7N60E-E3 at 100 °C case temperature?

The SIHF7N60E-E3 has a continuous drain current rating of 5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating from the 7 A rating at 25 °C reflects thermal limitations of the TO-220 FULLPAK package. Designers must ensure heatsink design maintains case temperature ≤ 100 °C under worst-case load to sustain this current without exceeding the 150 °C maximum junction temperature.

Does SIHF7N60E-E3 have a fully characterized body diode for synchronous rectification?

Yes, SIHF7N60E-E3 includes fully specified body diode parameters: t_rr = 230 ns, Q_rr = 1.9 μC, and I_RRM = 14 A, all measured at T_J = 25 °C with dI/dt = 100 A/μs. These values are documented in the Specifications table and support use in synchronous rectifier roles within LLC and phase-shifted full-bridge topologies where precise reverse recovery behavior is required for loss modeling.

What is the gate threshold voltage range for SIHF7N60E-E3, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHF7N60E-E3 is specified as 2–4 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while providing noise immunity - a V_GS below 2 V guarantees cutoff, preventing unintended conduction in electrically noisy industrial environments. Drive circuits should deliver ≥ 12 V to ensure full enhancement and minimize R_DS(on) variation across temperature.

Is SIHF7N60E-E3 suitable for use in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHF7N60E-E3 is explicitly rated for unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 43 mJ, tested per note b in the Absolute Maximum Ratings. This rating applies under defined conditions: V_DD = 50 V, starting T_J = 25 °C, L = 13.8 mH, R_g = 25 Ω, and I_AS = 2.5 A. It validates robustness in flyback, forward, and resonant converter designs where leakage inductance energy must be safely absorbed.

What thermal resistance values are specified for SIHF7N60E-E3, and how do they impact heatsink selection?

SIHF7N60E-E3 specifies R_thJC = 4.0 °C/W (max) from junction to case, and R_thJA = 65 °C/W (max) from junction to ambient. The low R_thJC confirms excellent thermal coupling between die and TO-220 FULLPAK drain tab - meaning heatsink interface quality (thermal paste, mounting pressure) dominates total thermal path. For 25 W dissipation, a heatsink with ≤ 21 °C/W (including interface resistance) is required to hold T_J ≤ 150 °C at T_A = 25 °C.

SIHF7N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF7N60E-E3 FAQ

1.How can I place an order for SIHF7N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF7N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF7N60E-E3 reliable?

The price and inventory of SIHF7N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF7N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHF7N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF7N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF7N60E-E3?

SIHF7N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF7N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF7N60E-E3?

For technical support, including SIHF7N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF7N60E-E3 requirements.

6.How does Aetrix verify that SIHF7N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF7N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF7N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHF7N60E-E3?

All SIHF7N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF7N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF7N60E-E3 part is unused and in its original packaging.

Return procedure for SIHF7N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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