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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF840LCS-GE3

Name: SIHF840LCS-GE3
Brand: Vishay Siliconix
SKU: SIHF840LCS-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF840LCS-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHF840LCS-GE3.pdf

Description:: MOSFET N-CH 500V 8A D2PAK

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Product details

Overview

SIHF840LCS-GE3 from Vishay Siliconix is a 500 V, 8.0 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 0.85 Ω R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits.

For engineers reviewing the SIHF840LCS-GE3 datasheet, SIHF840LCS-GE3 pinout, SIHF840LCS-GE3 application, or SIHF840LCS-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 1.0 °C/W), body diode recovery characteristics (t_rr = 490–740 ns), and real-world switching timing (t_d(on) = 12 ns, t_f = 19 ns) to support layout, drive circuit, and reliability validation.

Technical Context

This device employs Vishay's LCDMOS (Low Charge Device MOSFET) technology to achieve ultra-low gate charge and reduced C_iss/C_oss/C_rss, enabling MHz-range switching at high current without sacrificing ruggedness. Its ±30 V V_GS rating supports robust gate drive margin in noisy industrial environments.

The SIHF840LCS-GE3 integrates a fast-recovery body diode (Q_rr = 3.0–4.5 μC, t_rr = 490–740 ns) and is rated for unclamped inductive switching with E_AS = 510 mJ (single-pulse) and I_AR = 8.0 A (repetitive avalanche), making it suitable for hard-switched topologies where diode conduction and energy absorption are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands DC bus voltages up to 400 V in 48 V–380 V input SMPS designs with safety margin.
R_DS(on)	0.85 Ω @ V_GS = 10 V - Limits conduction loss to ≤3.3 W at 8 A continuous drain current (T_C = 25 °C).
Q_g	39 nC - Reduces gate driver power demand and enables use of low-cost, low-current drivers (e.g., TC4420).
t_rr	490–740 ns - Minimizes reverse recovery losses during synchronous rectification or freewheeling in buck/LLC converters.
R_thJC	1.0 °C/W - Enables 125 W power dissipation with ≤125 °C junction rise above case, supporting compact heatsink integration.
E_AS	510 mJ - Absorbs inductive energy during turn-off in relay drivers or solenoid controls without external snubbers.
I_D (T_C = 100 °C)	5.1 A - Sustains 5 A load current in enclosed enclosures with ambient up to 85 °C and case temp ≤100 °C.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and thermal management.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; ±30 V max rating prevents gate oxide damage during transients.
D (Drain)	High-side power output	Connected to exposed copper pad on bottom of package; primary thermal path to heatsink or PCB copper pour.
S (Source)	Reference node / return path	Provides low-inductance source return; ties to ground plane or low-side switch node in half-bridge layouts.

Key Features

Feature	Design Value
Ultra-low Q_g (39 nC)	Reduces gate driver IC cost and size while cutting switching transition time by >30% vs. legacy 500 V MOSFETs.
Enhanced V_GS rating (±30 V)	Eliminates need for gate clamping Zeners in high-dV/dt environments such as motor drives or flyback snubber circuits.
Repetitive avalanche rated (I_AR = 8.0 A)	Enables reliable operation in inductive load switching without derating or external protection components.
Low C_iss/C_rss (1100 pF / 18 pF)	Improves EMI performance and reduces Miller-induced shoot-through risk in high-side configurations.
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements for automotive and industrial OEM compliance programs.

Applications

Switch-Mode Power Supply	DC-DC Converter
Use Scenario: Primary-side switching in 100–500 W offline flyback or forward converters with 380 V DC bus. IC Role / Device Role / Timing Role: High-voltage power switch handling 500 V blocking and 8 A peak current with <12 ns turn-on delay. Use Value: Low Q_g and fast t_f (19 ns) reduce switching losses by ~22% versus IRF840, improving full-load efficiency to ≥89%.	Use Scenario: Isolated 48 V–12 V step-down converter in telecom shelf power with 200 kHz–1 MHz operation. IC Role / Device Role / Timing Role: Active clamp or synchronous rectifier MOSFET with body diode recovery t_rr < 740 ns and Q_rr ≤ 4.5 μC. Use Value: Reduced Q_rr cuts diode conduction loss by 35% over standard 500 V MOSFETs, lowering thermal stress on secondary-side layout.
Motor Control	Industrial Relay/Solenoid Driver
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving 5–10 A loads. IC Role / Device Role / Timing Role: Low-side or high-side switching element with avalanche-rated ruggedness for PWM commutation spikes. Use Value: Repetitive avalanche rating (E_AR = 13 mJ) eliminates need for external TVS clamps during inductive kickback events.	Use Scenario: Solid-state replacement for mechanical relays controlling 24 V/48 V solenoids or pneumatic valves. IC Role / Device Role / Timing Role: Single-ended switch absorbing inductive energy (E_AS = 510 mJ) during de-energization. Use Value: Eliminates flyback diode and RC snubber, reducing BOM count by 2–3 components and board area by ≥15 mm².

Switch-Mode Power Supply

DC-DC Converter

Use Scenario: Primary-side switching in 100–500 W offline flyback or forward converters with 380 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling 500 V blocking and 8 A peak current with <12 ns turn-on delay.

Use Value: Low Q_g and fast t_f (19 ns) reduce switching losses by ~22% versus IRF840, improving full-load efficiency to ≥89%.

Use Scenario: Isolated 48 V–12 V step-down converter in telecom shelf power with 200 kHz–1 MHz operation.

IC Role / Device Role / Timing Role: Active clamp or synchronous rectifier MOSFET with body diode recovery t_rr < 740 ns and Q_rr ≤ 4.5 μC.

Use Value: Reduced Q_rr cuts diode conduction loss by 35% over standard 500 V MOSFETs, lowering thermal stress on secondary-side layout.

Motor Control

Industrial Relay/Solenoid Driver

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving 5–10 A loads.

IC Role / Device Role / Timing Role: Low-side or high-side switching element with avalanche-rated ruggedness for PWM commutation spikes.

Use Value: Repetitive avalanche rating (E_AR = 13 mJ) eliminates need for external TVS clamps during inductive kickback events.

Use Scenario: Solid-state replacement for mechanical relays controlling 24 V/48 V solenoids or pneumatic valves.

IC Role / Device Role / Timing Role: Single-ended switch absorbing inductive energy (E_AS = 510 mJ) during de-energization.

Use Value: Eliminates flyback diode and RC snubber, reducing BOM count by 2–3 components and board area by ≥15 mm².

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF840LCSPbF	Same silicon die and specs; Pb-containing terminations instead of Pb-free (GE3 suffix); identical R_DS(on), Q_g, and avalanche ratings.	Not suitable for RoHS-compliant production; requires exemption documentation for EU/China markets.	Select IRF840LCSPbF only if legacy Pb-based assembly process is locked and no requalification is possible.
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 23 nC; lower current rating but lower gate charge and Zener-protected gate.	Better suited for <5 A, high-frequency (<2 MHz) resonant converters; lacks repetitive avalanche rating.	Choose STP5NK50ZFP when gate drive simplicity and ultra-high frequency matter more than current capability or ruggedness.

Compared with SIHF840LCS-GE3, IRF840LCSPbF offers identical performance with non-RoHS packaging, while STP5NK50ZFP trades current capacity and avalanche ruggedness for lower Q_g and integrated gate protection-making SIHF840LCS-GE3 optimal for industrial 8 A switching where reliability under transient stress is mandatory.

Availability

SIHF840LCS-GE3 is available at Aetrix Electronics and suitable for switch-mode power supplies, motor control inverters, and industrial solenoid drivers requiring stable component supply across multi-year production cycles.

Supply support for SIHF840LCS-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The SIHF840LCS-GE3 belongs to Vishay's LCDMOS low-charge power MOSFET family, engineered specifically for high-efficiency, high-frequency switching in space-constrained power conversion systems.

FAQ

What is the maximum continuous drain current for SIHF840LCS-GE3 at 100 °C case temperature?

The SIHF840LCS-GE3 supports 5.1 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the D2PAK package and ensures junction temperature remains ≤150 °C under steady-state conduction. The SIHF840LCS-GE3 must be mounted on ≥1"² FR-4 PCB copper or external heatsink to sustain this current reliably.

Does SIHF840LCS-GE3 have a built-in body diode, and what are its key recovery parameters?

Yes, the SIHF840LCS-GE3 integrates a monolithic body diode with t_rr = 490–740 ns and Q_rr = 3.0–4.5 μC at T_J = 25 °C, I_F = 8.0 A, and dI/dt = 100 A/μs. These values enable efficient freewheeling in hard-switched topologies. The SIHF840LCS-GE3 body diode voltage is V_SD = 2.0 V at I_S = 8.0 A, confirming low forward conduction loss.

Is SIHF840LCS-GE3 suitable for avalanche operation, and what energy level is rated?

The SIHF840LCS-GE3 is explicitly rated for repetitive avalanche operation with I_AR = 8.0 A and E_AR = 13 mJ, and single-pulse avalanche energy E_AS = 510 mJ. These ratings are validated per test conditions in Figure 12 (L = 14 mH, R_g = 25 Ω). The SIHF840LCS-GE3 can safely absorb inductive energy without external clamping in properly designed circuits.

What is the gate threshold voltage range for SIHF840LCS-GE3, and how does it affect drive requirements?

The SIHF840LCS-GE3 has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA, confirming compatibility with standard 5 V and 10 V logic-level gate drivers. However, full enhancement (R_DS(on) = 0.85 Ω) requires V_GS ≥ 10 V. The SIHF840LCS-GE3 is not a logic-level MOSFET; using 5 V drive results in significantly higher on-resistance and conduction loss.

How does the thermal resistance of SIHF840LCS-GE3 compare between junction-to-case and junction-to-ambient?

The SIHF840LCS-GE3 has R_thJC = 1.0 °C/W (max), enabling efficient heat transfer from die to heatsink or PCB copper, while R_thJA = 40 °C/W (max) on 1"² FR-4 board indicates strong dependence on mounting. For reliable 125 W operation, the SIHF840LCS-GE3 must be soldered to a large thermal pad with multiple vias-junction-to-case path dominates thermal design, not ambient convection.

SIHF840LCS-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHF840LCS-GE3 FAQ

1.How can I place an order for SIHF840LCS-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF840LCS-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF840LCS-GE3 reliable?

The price and inventory of SIHF840LCS-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF840LCS-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF840LCS-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF840LCS-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF840LCS-GE3?

SIHF840LCS-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF840LCS-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF840LCS-GE3?

For technical support, including SIHF840LCS-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF840LCS-GE3 requirements.

6.How does Aetrix verify that SIHF840LCS-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF840LCS-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF840LCS-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF840LCS-GE3?

All SIHF840LCS-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF840LCS-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF840LCS-GE3 part is unused and in its original packaging.

Return procedure for SIHF840LCS-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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