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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF8N50D-E3

Name: SIHF8N50D-E3
Brand: Vishay Siliconix
SKU: SIHF8N50D-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF8N50D-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF8N50D-E3.pdf

Description:: MOSFET N-CH 500V 8.7A TO220

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Product details

Overview

SIHF8N50D-E3 from Vishay Siliconix is a 500 V, 8.7 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in offline SMPS and industrial motor drives. It delivers R_DS(on) ≤ 0.85 Ω at V_GS = 10 V, Q_g ≤ 30 nC, and avalanche-rated (E_AS = 56 mJ), enabling efficient hard-switched flyback and LLC resonant converters.

For engineers reviewing the SIHF8N50D-E3 datasheet, SIHF8N50D-E3 pinout, SIHF8N50D-E3 application, or SIHF8N50D-E3 equivalent, key selection criteria include its 500 V V_DS rating, low gate charge for fast turn-on/turn-off, rugged body diode with t_rr = 308 ns, and thermal resistance R_thJC = 3.8 °C/W - critical for thermally constrained 100–300 W power stages.

Technical Context

This MOSFET employs planar vertical DMOS technology with optimized cell pitch and gate oxide design to achieve low area-specific R_DS(on) and reduced C_iss (527 pF) and C_oss (52 pF). Its gate threshold voltage (V_GS(th) = 3–5 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device integrates an avalanche-energy-rated body diode (E_AS = 56 mJ) and supports unclamped inductive switching up to I_AS = 7 A. Its dV/dt immunity of 24 V/ns at T_J = 125 °C and reverse diode dV/dt rating of 0.37 V/ns enable robust operation in noisy high-di/dt environments like welding inverters and induction heating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V AC input rectified systems with 25 % margin for line surges and ringing
R_DS(on) max @ 10 V	0.85 Ω - enables ≤ 29 W conduction loss at 8.7 A continuous drain current
Q_g max	30 nC - reduces gate drive power and allows use of low-cost 1 W gate drivers
E_AS	56 mJ - withstands repetitive unclamped inductive energy without failure in motor drive freewheeling
t_rr	308 ns - limits diode recovery losses and EMI in hard-switched topologies
R_thJC	3.8 °C/W - permits 33 W dissipation with ≤ 128 °C junction rise over 25 °C case temperature
I_D cont @ 100 °C	5.5 A - defines usable current derating in enclosed industrial enclosures with limited airflow

Pinout & Package

SIHF8N50D-E3 uses the TO-220 FULLPAK package - a modified TO-220 with exposed drain paddle on the backside and insulated tab, enabling direct heatsinking without insulating washers. Package dimensions conform to Vishay drawing 91359 (Option 1 or 2), with 3.8 °C/W junction-to-case thermal resistance measured from die to drain paddle.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 4 nC Q_gs enables fast Miller plateau crossing
D (Drain)	High-side power terminal	Internally connected to exposed copper paddle; primary thermal path and high-voltage node
S (Source)	Reference and return path	Common return for gate drive and load current; ties to PCB ground plane for EMI control

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	≤ 25.5 Ω·nC - improves efficiency in both conduction and switching domains simultaneously
Avalanche energy rated	56 mJ single-pulse - eliminates need for external snubbers in inductive load switching
Rugged body diode	t_rr = 308 ns, Q_rr = 1.8 μC - reduces cross-conduction loss and dv/dt-induced shoot-through risk
High dV/dt immunity	24 V/ns at 125 °C - prevents false turn-on during fast voltage transients in high-noise environments
Lead (Pb)-free TO-220 FULLPAK	RoHS-compliant, reflow-solderable up to 300 °C peak - supports automated SMT assembly with no lead contamination

Applications

Server SMPS	Induction Heating
Use Scenario: Primary-side switch in 200–300 W half-bridge resonant LLC converters powering server VRMs. IC Role / Device Role / Timing Role: High-voltage synchronous rectifier switch handling 400 V DC bus with 100 kHz–300 kHz switching. Use Value: Low Q_g (30 nC) and fast t_f (22 ns) minimize dead-time losses and improve ZVS margin across load range.	Use Scenario: Half-bridge inverter stage driving 20–50 kHz resonant tank for domestic induction cooktops. IC Role / Device Role / Timing Role: Fast-switching high-current switch managing 8–12 A peak load current with high di/dt. Use Value: Avalanche rating (56 mJ) and rugged body diode withstand repeated unclamped inductive energy during zero-crossing commutation.
Welding Inverters	Battery Chargers
Use Scenario: Output stage switch in 5–10 kW IGBT-assisted inverter welders operating at 15–25 kHz. IC Role / Device Role / Timing Role: High-reliability main switch handling repetitive 18 A pulsed drain current and high thermal cycling. Use Value: R_thJC = 3.8 °C/W and 150 °C max T_J enable stable operation under 100 % duty-cycle intermittent loads.	Use Scenario: Primary-side switch in universal-input 150–250 W flyback chargers for EV auxiliary systems. IC Role / Device Role / Timing Role: 500 V-rated switch supporting 265 V AC input with surge tolerance and low standby loss. Use Value: Ultra-low I_DSS (1 μA at 500 V) minimizes no-load input power and meets Energy Star Level VI requirements.

Server SMPS

Induction Heating

Use Scenario: Primary-side switch in 200–300 W half-bridge resonant LLC converters powering server VRMs.

IC Role / Device Role / Timing Role: High-voltage synchronous rectifier switch handling 400 V DC bus with 100 kHz–300 kHz switching.

Use Value: Low Q_g (30 nC) and fast t_f (22 ns) minimize dead-time losses and improve ZVS margin across load range.

Use Scenario: Half-bridge inverter stage driving 20–50 kHz resonant tank for domestic induction cooktops.

IC Role / Device Role / Timing Role: Fast-switching high-current switch managing 8–12 A peak load current with high di/dt.

Use Value: Avalanche rating (56 mJ) and rugged body diode withstand repeated unclamped inductive energy during zero-crossing commutation.

Welding Inverters

Battery Chargers

Use Scenario: Output stage switch in 5–10 kW IGBT-assisted inverter welders operating at 15–25 kHz.

IC Role / Device Role / Timing Role: High-reliability main switch handling repetitive 18 A pulsed drain current and high thermal cycling.

Use Value: R_thJC = 3.8 °C/W and 150 °C max T_J enable stable operation under 100 % duty-cycle intermittent loads.

Use Scenario: Primary-side switch in universal-input 150–250 W flyback chargers for EV auxiliary systems.

IC Role / Device Role / Timing Role: 500 V-rated switch supporting 265 V AC input with surge tolerance and low standby loss.

Use Value: Ultra-low I_DSS (1 μA at 500 V) minimizes no-load input power and meets Energy Star Level VI requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, R_DS(on) = 0.95 Ω, Q_g = 32 nC, TO-220FP package (no insulated tab)	Lacks full-pak insulation; requires mounting insulator; slightly higher R_DS(on) increases conduction loss by ~12 %	Prefer SIHF8N50D-E3 where direct heatsink mounting without isolation is required and lower Q_g improves light-load efficiency.
IXTH8N50L	500 V, 8 A, R_DS(on) = 0.85 Ω, Q_g = 27 nC, TO-247AC package	Larger TO-247 footprint; superior R_thJC (1.7 °C/W) but higher cost and board space; same V_GS(th) range	Choose IXTH8N50L only when thermal budget is extremely tight and PCB layout accommodates TO-247; otherwise SIHF8N50D-E3 offers better cost/performance in TO-220 footprint.

Compared with STP8NK50ZFP and IXTH8N50L, SIHF8N50D-E3 uniquely combines TO-220 FULLPAK's insulated tab, 30 nC gate charge, and 56 mJ avalanche rating - making it optimal for space-constrained, thermally demanding, and inductive-load applications where reliability and ease of heatsinking are prioritized over ultra-low R_thJC.

Availability

SIHF8N50D-E3 is available at Aetrix Electronics and suitable for server SMPS, induction heating inverters, welding equipment, and industrial battery chargers requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHF8N50D-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The D Series power MOSFETs - including SIHF8N50D-E3 - were engineered for high-voltage, medium-power switching in industrial and consumer power supplies, emphasizing low FOM, avalanche robustness, and thermal efficiency in compact packages.

FAQ

What is the maximum continuous drain current rating for SIHF8N50D-E3 at 100 °C case temperature?

The SIHF8N50D-E3 has a maximum continuous drain current (I_D) of 5.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and ensures safe operation within the 150 °C maximum junction temperature limit. The SIHF8N50D-E3 must be mounted to an adequately sized heatsink to sustain this current continuously.

Does SIHF8N50D-E3 support logic-level gate drive?

No, SIHF8N50D-E3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 3 V to 5 V, and it is characterized for R_DS(on) at V_GS = 10 V. While it may partially turn on with 5 V drive, full enhancement requires ≥ 10 V to achieve the specified 0.85 Ω on-resistance. For reliable switching, the SIHF8N50D-E3 should be driven with a 10–15 V gate-source voltage.

What is the significance of the "FULLPAK" designation in SIHF8N50D-E3?

The "FULLPAK" in SIHF8N50D-E3 refers to Vishay's proprietary TO-220 variant with an insulated plastic body and electrically isolated metal tab - unlike standard TO-220 where the tab is internally connected to the drain. This allows direct mounting to a grounded heatsink without requiring an insulating pad, simplifying thermal design and improving reliability. The SIHF8N50D-E3 leverages this for lower thermal resistance and safer high-voltage system integration.

Can SIHF8N50D-E3 replace older SiHF8N50 in existing designs?

Yes, SIHF8N50D-E3 is a direct replacement for SiHF8N50, sharing identical pinout, package (TO-220 FULLPAK), and electrical specifications. The "-E3" suffix denotes lead (Pb)-free, RoHS-compliant construction per Vishay specification, with no performance or reliability trade-offs. Designers can migrate to SIHF8N50D-E3 without layout or firmware changes, maintaining full functional and thermal compatibility in legacy systems.

How does the body diode performance of SIHF8N50D-E3 impact its use in synchronous rectification?

The SIHF8N50D-E3 features a fast, rugged body diode with t_rr = 308 ns and Q_rr = 1.8 μC, enabling reliable freewheeling in non-synchronous topologies. However, it is not optimized for synchronous rectification due to relatively high V_SD (1.2 V) and lack of dedicated low-V_F diode co-design. For synchronous rectification, discrete Schottky or dedicated SR controllers paired with low-Q_rr MOSFETs are preferred - though the SIHF8N50D-E3 remains suitable for primary-side switching where its body diode handles clamp or snubber paths.

SIHF8N50D-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 527 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF8N50D-E3 FAQ

1.How can I place an order for SIHF8N50D-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF8N50D-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF8N50D-E3 reliable?

The price and inventory of SIHF8N50D-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF8N50D-E3 is usually 5 days.

3.What payment methods are accepted for SIHF8N50D-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF8N50D-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF8N50D-E3?

SIHF8N50D-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF8N50D-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF8N50D-E3?

For technical support, including SIHF8N50D-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF8N50D-E3 requirements.

6.How does Aetrix verify that SIHF8N50D-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF8N50D-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF8N50D-E3 meets industry standards.

7.What is the process for return or replacement of SIHF8N50D-E3?

All SIHF8N50D-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF8N50D-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF8N50D-E3 part is unused and in its original packaging.

Return procedure for SIHF8N50D-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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