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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF8N50L-E3

Name: SIHF8N50L-E3
Brand: Vishay Siliconix
SKU: SIHF8N50L-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF8N50L-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SIHF8N50L-E3.pdf

Description:: MOSFET N-CH 500V 8A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF8N50L-E3 from Vishay Siliconix is a 500 V, 8 A N-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 1 Ω at V_GS = 10 V, Q_g = 34 nC, and 100 % avalanche tested for ruggedness. It serves as a high-voltage switching element in offline SMPS, AC-DC adapters, and industrial motor controls requiring reliable unclamped inductive switching.

For engineers reviewing the SIHF8N50L-E3 datasheet, SIHF8N50L-E3 pinout, SIHF8N50L-E3 application, or SIHF8N50L-E3 equivalent, this page delivers verified electrical parameters, thermal resistance (R_thJC = 3.1 °C/W), body diode recovery metrics (t_rr = 63 ns, Q_rr = 114 nC), and real-world design implications for hard-switched flyback and LLC resonant converters.

Technical Context

This device employs planar vertical DMOS technology with optimized gate charge distribution (Q_gd/Q_g = 30.6 %) to reduce switching losses in high-frequency power conversion. Its low C_iss (873 pF) and Cr_ss (11 pF) support fast turn-on/turn-off with td(on) = 17.3 ns and tf = 17 ns under standardized test conditions (V_DD = 250 V, I_D = 6 A, R_G = 14 Ω).

The integral body diode is characterized for reverse recovery (dI/dt ≤ 460 A/μs, V_SD = 1.5 V at I_S = 8 A) and rated for repetitive operation up to T_J = 150 °C. Maximum safe operating area (SOA) is defined for pulse widths down to 1 μs, limited by R_DS(on) at high V_DS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC bus designs with 25 % margin for voltage transients in universal-input offline converters
R_DS(on)	1 Ω @ V_GS = 10 V - enables <1 W conduction loss at 8 A continuous drain current in thermally constrained layouts
Q_g	34 nC - determines gate drive power requirement; ~340 mW average drive loss at 100 kHz with 10 V swing
E_AS	180 mJ - withstands single-pulse inductive energy without failure in unclamped switching applications
t_rr	63 ns - limits diode reverse recovery stress on synchronous rectifiers and adjacent switches in bridge topologies
R_thJC	3.1 °C/W - allows 40 W dissipation with ≤124 °C junction rise above case, enabling compact heatsink integration
I_D cont	8 A @ T_C = 25 °C - defines maximum steady-state current before thermal derating begins at 0.32 W/°C

Pinout & Package

TO-220 FULLPAK package with isolated drain tab, 3-pin through-hole mounting, and exposed copper thermal pad on underside for direct heatsink attachment. Package dimensions per Vishay Doc. #91359: D = 15.87 mm (length), E = 10.10 mm (width), L = 13.10 mm (height), ØR = 3.18 mm (mounting hole).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold V_GS(th) = 3.0–5.0 V ensures reliable turn-on with standard PWM controllers
D (Drain)	High-side power terminal	Internally connected to metal tab; requires electrical isolation when mounted to heatsink due to full 500 V potential
S (Source)	Reference node / return path	Common connection point for gate drive return, current sensing, and low-side switching reference; ties to PCB ground plane

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	34 Ω·nC - balances conduction and switching losses for optimal efficiency in 65–100 kHz SMPS designs
100 % avalanche rated	180 mJ single-pulse energy - eliminates need for external snubbers in flyback and forward converter primary switches
Improved trr/Qrr	t_rr = 63 ns, Q_rr = 114 nC - reduces cross-conduction losses and EMI in half-bridge configurations
Peak dV/dt immunity	24 V/ns - sustains rapid voltage transitions during hard switching without false turn-on or latch-up
RoHS-compliant lead-free finish	E3 suffix denotes matte tin plating - meets JEDEC J-STD-020 reflow profile requirements for Pb-free assembly

Applications

AC-DC Power Adapters	Industrial Motor Drives
Use Scenario: Universal-input (90–264 V_AC) 30–65 W adapter with active PFC and flyback secondary. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback controller. Use Value: 500 V rating accommodates 385 V DC link with margin; low Q_g enables efficient operation at 65 kHz without excessive gate drive loss.	Use Scenario: 3-phase inverter stage for 0.5–1 kW brushless DC motor control in HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge leg driving gate-commutated devices. Use Value: Avalanche ruggedness prevents failure during motor phase-current commutation spikes; SOA supports 10 ms overload pulses.
LED Street Lighting Drivers	Telecom DC-DC Converters
Use Scenario: Constant-current 100–200 W LED driver with boost PFC front-end and LLC resonant output stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC controller handling 400 V DC bus. Use Value: R_DS(on) = 1 Ω limits conduction loss to <6.4 W at 8 A peak, supporting >93 % PFC efficiency at full load.	Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom shelf power systems. IC Role / Device Role / Timing Role: Primary-side switch in forward converter topology operating at 200–300 kHz. Use Value: Fast t_r/t_f (35 ns/17 ns) minimizes dead-time losses; C_oss = 105 pF reduces capacitive turn-on loss at high frequency.

AC-DC Power Adapters

Industrial Motor Drives

Use Scenario: Universal-input (90–264 V_AC) 30–65 W adapter with active PFC and flyback secondary.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback controller.

Use Value: 500 V rating accommodates 385 V DC link with margin; low Q_g enables efficient operation at 65 kHz without excessive gate drive loss.

Use Scenario: 3-phase inverter stage for 0.5–1 kW brushless DC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge leg driving gate-commutated devices.

Use Value: Avalanche ruggedness prevents failure during motor phase-current commutation spikes; SOA supports 10 ms overload pulses.

LED Street Lighting Drivers

Telecom DC-DC Converters

Use Scenario: Constant-current 100–200 W LED driver with boost PFC front-end and LLC resonant output stage.

IC Role / Device Role / Timing Role: High-side switch in boost PFC controller handling 400 V DC bus.

Use Value: R_DS(on) = 1 Ω limits conduction loss to <6.4 W at 8 A peak, supporting >93 % PFC efficiency at full load.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom shelf power systems.

IC Role / Device Role / Timing Role: Primary-side switch in forward converter topology operating at 200–300 kHz.

Use Value: Fast t_r/t_f (35 ns/17 ns) minimizes dead-time losses; C_oss = 105 pF reduces capacitive turn-on loss at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	R_DS(on) = 0.75 Ω @ 10 V, Q_g = 32 nC, TO-220FP package with insulated tab	Lower R_DS(on) improves conduction efficiency but requires identical heatsink isolation; slightly faster t_r (25 ns)	Preferred where <0.5 W conduction loss is critical and layout permits same footprint
IRFBC40APBF	R_DS(on) = 0.85 Ω @ 10 V, Q_g = 42 nC, TO-220AB package without full isolation	Higher Q_g increases gate drive loss; non-FULLPAK construction lacks integrated thermal pad, requiring thermal compound interface	Selected when legacy board compatibility with standard TO-220 is required and thermal budget allows +20 % drive loss

Compared with STP8NK50ZFP and IRFBC40APBF, SIHF8N50L-E3 offers balanced trade-offs: its TO-220 FULLPAK construction provides superior thermal coupling over IRFBC40APBF, while its 1 Ω R_DS(on) remains within 13 % of STP8NK50ZFP's 0.75 Ω-making it ideal for cost-sensitive, thermally constrained 50–100 W designs where avalanche robustness is prioritized over marginal R_DS(on) reduction.

Availability

SIHF8N50L-E3 is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial motor drives, and LED street lighting drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHF8N50L-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SIHF8N50L-E3 belongs to Vishay's high-voltage power MOSFET product line designed for rugged, high-efficiency switching in offline power conversion, offering optimized gate charge and avalanche performance for industrial and consumer-grade SMPS.

FAQ

What is the maximum continuous drain current rating for SIHF8N50L-E3 at 100 °C case temperature?

The SIHF8N50L-E3 has a continuous drain current rating of 8 A at T_C = 25 °C, with linear derating of 0.32 W/°C. At T_C = 100 °C, the allowable power dissipation drops to 17.6 W. Using R_DS(on) = 1 Ω, the corresponding I_D is √(17.6 W / 1 Ω) ≈ 4.2 A. Therefore, the maximum continuous drain current for SIHF8N50L-E3 at 100 °C case temperature is approximately 4.2 A.

Does SIHF8N50L-E3 support logic-level gate drive?

No, SIHF8N50L-E3 is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 3.0 V to 5.0 V, and it is specified for R_DS(on) at V_GS = 10 V. While it may partially turn on with 5 V drive, full enhancement requires ≥10 V to achieve rated 1 Ω on-resistance. For true logic-level operation, consider Vishay's SiHF10N50C-E3 (V_GS(th) max = 3.5 V, R_DS(on) = 0.65 Ω @ 5 V).

What is the thermal resistance from junction to case (R_thJC) for SIHF8N50L-E3, and how does it impact heatsink selection?

The SIHF8N50L-E3 has a maximum junction-to-case thermal resistance R_thJC of 3.1 °C/W. This value directly determines the minimum heatsink thermal resistance needed to maintain T_J ≤ 150 °C. For example, at 40 W dissipation and T_C = 70 °C, the required heatsink-to-ambient resistance is ≤ (150 − 70)/40 − 3.1 = 0.9 °C/W. The TO-220 FULLPAK's exposed copper pad enables low-interface resistance, making SIHF8N50L-E3 compatible with compact extruded or stamped heatsinks.

How is the body diode performance of SIHF8N50L-E3 characterized, and where is it most relevant?

The SIHF8N50L-E3 body diode is characterized with t_rr = 63 ns, Q_rr = 114 nC, and V_SD = 1.5 V at I_S = 8 A. These parameters are critical in topologies where the MOSFET conducts reverse current-such as synchronous rectification in LLC converters or freewheeling in half-bridge motor drives. Low Q_rr minimizes recovery-related switching losses and EMI, while the 100 % avalanche rating ensures reliability during diode commutation stress.

Is SIHF8N50L-E3 suitable for use in automotive applications?

The SIHF8N50L-E3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. Its operating temperature range (−55 to +150 °C) and avalanche rating support industrial and commercial applications, but Vishay does not specify automotive-grade qualification, PPAP documentation, or extended lifetime testing for SIHF8N50L-E3. For automotive use, consider Vishay's SQ series (e.g., SQM85N50) which are AEC-Q101 qualified and thermally enhanced.

SIHF8N50L-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 0 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 873 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220 Full Pack

SIHF8N50L-E3 FAQ

1.How can I place an order for SIHF8N50L-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF8N50L-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF8N50L-E3 reliable?

The price and inventory of SIHF8N50L-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF8N50L-E3 is usually 5 days.

3.What payment methods are accepted for SIHF8N50L-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF8N50L-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF8N50L-E3?

SIHF8N50L-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF8N50L-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF8N50L-E3?

For technical support, including SIHF8N50L-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF8N50L-E3 requirements.

6.How does Aetrix verify that SIHF8N50L-E3 is sourced from the original manufacturer or authorized distributors?

All SIHF8N50L-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF8N50L-E3 meets industry standards.

7.What is the process for return or replacement of SIHF8N50L-E3?

All SIHF8N50L-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF8N50L-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF8N50L-E3 part is unused and in its original packaging.

Return procedure for SIHF8N50L-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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