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Vishay Siliconix SIHF9520S-GE3
- Part No.:
- SIHF9520S-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHF9520S-GE3.pdf
- Description:
- MOSFET P-CH 100V 6.8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:688
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Product details
Overview
SIHF9520S-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -100 V drain-source voltage, 0.60 Ω RDS(on) at VGS = -10 V, and -6.8 A continuous drain current at TC = 25 °C. It delivers ruggedized switching performance in high-side DC-DC converters, motor control H-bridge upper switches, and industrial power supply OR-ing circuits.
For engineers reviewing the SIHF9520S-GE3 datasheet, SIHF9520S-GE3 pinout, SIHF9520S-GE3 application, or SIHF9520S-GE3 equivalent, key selection criteria include its -100 V blocking capability, repetitive avalanche rating (6.0 mJ), fast turn-off delay (21 ns), 175 °C maximum junction temperature, and surface-mount D2PAK thermal performance with 2.5 °C/W RthJC.
Technical Context
This device operates as a high-voltage P-channel switch requiring negative gate drive relative to source. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard -10 V logic-level drive while maintaining low leakage (< ±100 nA IGSS). The integrated body diode supports bidirectional current flow in synchronous rectification and flyback recovery paths.
Designed for unclamped inductive switching, SIHF9520S-GE3 features dynamic dV/dt immunity (-5.5 V/ns) and single-pulse avalanche energy rating of 300 mJ. Its 390 pF input capacitance (Ciss) and 18 nC total gate charge enable efficient gate driver sizing for <30 ns rise/fall times under 18 Ω gate resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V and 72 V industrial bus systems without derating |
| RDS(on) | 0.60 Ω @ VGS = -10 V - Enables ≤4.6 W conduction loss at -6.8 A continuous current |
| Qg | 18 nC - Determines gate driver peak current requirement (~0.9 A for 20 ns rise time) |
| EAS | 300 mJ - Allows safe operation in unclamped inductive load transients up to -6.8 A |
| TJ(max) | +175 °C - Permits operation in sealed enclosures or high-ambient environments without forced cooling |
| RthJC | 2.5 °C/W - Enables 60 W power dissipation with minimal heatsink when mounted on copper plane |
| ID(cont) | -6.8 A @ TC = 25 °C - Sustains full-rated current in PCB-mounted thermal designs with 1"² FR-4 |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring. Standard 3-lead configuration: Gate (G), Drain (D), Source (S), with drain connected to the large backside metal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires negative voltage relative to source to turn on; 3.0 nC Qgs defines Miller plateau timing |
| D | Drain | Main high-side power terminal; electrically and thermally tied to exposed backside pad; handles full load current and avalanche energy |
| S | Source | Reference node for gate drive; carries return current; forms cathode of integral body diode for reverse recovery path |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting gate drivers in buck or half-bridge topologies |
| Repetitive avalanche rated | Withstands 6.0 mJ repeated inductive spikes without degradation-critical for relay/snubberless motor drives |
| Dynamic dV/dt immunity | -5.5 V/ns rating prevents false turn-on during fast voltage transients in noisy industrial environments |
| 175 °C operating temperature | Supports extended lifetime in sealed power supplies and automotive under-hood applications |
| RoHS-compliant, halogen-free | Meets IPC-1752A material declaration requirements for industrial and medical end equipment |
Applications
| Industrial Power Supply OR-ing | High-Side Load Switch |
|---|---|
|
Use Scenario: Parallel redundant 48 V DC power modules feeding common bus with automatic fault isolation. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode controller switch, placed between module output and shared bus. Use Value: Eliminates 0.6–1.2 V forward drop of Schottky diodes, reducing heat generation by >70 % and enabling higher power density. |
Use Scenario: Remote-controlled power sequencing for FPGA I/O banks or sensor subsystems in factory automation PLCs. IC Role / Device Role / Timing Role: High-side switch controlling 24–48 V rail delivery; driven by microcontroller GPIO via simple inverter stage. Use Value: Provides clean hot-swap capability with <25 ns turn-off delay, preventing bus droop during load insertion/removal. |
| H-Bridge Motor Control (Upper Arm) | DC-DC Buck Converter High-Side Switch |
|
Use Scenario: Bidirectional 24 V brushed DC motor drive in robotic joint actuators with regenerative braking. IC Role / Device Role / Timing Role: Upper-arm P-channel switch in half-bridge; body diode conducts reverse current during PWM off-time. Use Value: 98 ns body diode reverse recovery time enables efficient freewheeling at 20–50 kHz PWM frequencies without snubbers. |
Use Scenario: Non-synchronous buck converter stepping 72 V battery down to 12 V for vehicle infotainment systems. IC Role / Device Role / Timing Role: High-side synchronous rectifier replacement; operated with fixed 50–100 kHz duty cycle. Use Value: 0.60 Ω RDS(on) limits conduction loss to <2.8 W at 6.8 A, permitting compact heatsink-less design in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9520SPbF | Same die and specs, but leaded (Pb-containing) terminations; RthJA = 62 °C/W vs. 40 °C/W for PCB mount | Not suitable for RoHS-compliant production; requires Pb-compatible reflow profile and exemption documentation | Select only if legacy compliance waivers apply and thermal budget allows higher ambient rise |
| IXTP10P10P | Higher RDS(on) (1.0 Ω), lower Qg (12 nC), TO-220 package; no avalanche rating specified | Limited to lower-current (<4 A), non-avalanche-critical applications; requires through-hole assembly and larger heatsink | Choose when cost sensitivity outweighs thermal performance and ruggedness requirements |
Compared with IRF9520SPbF and IXTP10P10P, SIHF9520S-GE3 provides superior thermal resistance (2.5 °C/W RthJC), guaranteed repetitive avalanche capability, and RoHS/halogen-free compliance-making it the preferred choice for modern industrial and transportation power systems demanding reliability and regulatory alignment.
Availability
SIHF9520S-GE3 is available at Aetrix Electronics and suitable for industrial power supply OR-ing, high-side load switching, and H-bridge motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHF9520S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal efficiency, and high-reliability packaging.
The SIHF9520S-GE3 belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered specifically for high-current, high-temperature industrial and transportation power conversion where avalanche robustness and surface-mount thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for SIHF9520S-GE3 at 100 °C case temperature?
The SIHF9520S-GE3 supports -4.8 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be verified against actual board layout and heatsinking in the final design. SIHF9520S-GE3 maintains stable RDS(on) up to 175 °C junction temperature.
Does SIHF9520S-GE3 have a specified avalanche energy rating, and is it suitable for unclamped inductive switching?
Yes, SIHF9520S-GE3 is explicitly rated for repetitive avalanche energy of 6.0 mJ and single-pulse avalanche energy of 300 mJ, per test conditions in Figure 12. Its design includes ruggedized die construction and validated dV/dt immunity (-5.5 V/ns), making SIHF9520S-GE3 appropriate for unclamped inductive loads such as solenoid drivers and relay coils without external snubbers.
What is the gate threshold voltage range for SIHF9520S-GE3, and how does it affect drive circuit design?
The SIHF9520S-GE3 has a gate threshold voltage (VGS(th)) range of -2.0 V to -4.0 V at ID = -250 μA. This ensures full enhancement with -10 V gate drive while allowing compatibility with -5 V logic-level controllers. Designers must ensure gate drive stays below -20 V absolute maximum to avoid damage. SIHF9520S-GE3's 3.0 nC Qgs enables predictable Miller plateau timing in gate driver selection.
Can SIHF9520S-GE3 be used in surface-mount designs without a heatsink?
SIHF9520S-GE3 can operate without an external heatsink in low-duty-cycle or low-current applications, provided the PCB layout incorporates ≥1"² copper area per the recommended pads (Document 73397). At 3.7 W maximum power dissipation in PCB-mount configuration, thermal simulation is required to confirm junction temperature remains below 175 °C. SIHF9520S-GE3's 2.5 °C/W RthJC enables efficient heat transfer to internal copper planes.
Is SIHF9520S-GE3 RoHS-compliant and halogen-free?
Yes, SIHF9520S-GE3 is both RoHS-compliant and halogen-free, as confirmed in the Ordering Information table and Material Categorization note (www.vishay.com/doc?99912). The "-GE3" suffix denotes lead (Pb)-free and halogen-free terminations meeting JEDEC J-STD-609A Class 1 standards. SIHF9520S-GE3 is suitable for medical, industrial, and transportation equipment requiring strict environmental compliance.
SIHF9520S-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 60W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHF9520S-GE3 FAQ
1.How can I place an order for SIHF9520S-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHF9520S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHF9520S-GE3 reliable?
The price and inventory of SIHF9520S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF9520S-GE3 is usually 5 days.
3.What payment methods are accepted for SIHF9520S-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF9520S-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHF9520S-GE3?
SIHF9520S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHF9520S-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHF9520S-GE3?
For technical support, including SIHF9520S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF9520S-GE3 requirements.
6.How does Aetrix verify that SIHF9520S-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHF9520S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF9520S-GE3 meets industry standards.
7.What is the process for return or replacement of SIHF9520S-GE3?
All SIHF9520S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF9520S-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHF9520S-GE3 part is unused and in its original packaging.
Return procedure for SIHF9520S-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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