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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF9620S-GE3

Name: SIHF9620S-GE3
Brand: Vishay Siliconix
SKU: SIHF9620S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF9620S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHF9620S-GE3.pdf

Description:: MOSFET P-CHANNEL 200V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHF9620S-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -200 V drain-source voltage, 1.5 Ω on-resistance at V_GS = -10 V, and -3.5 A continuous drain current at T_C = 25 °C. It delivers rugged clamped inductive switching with -14 A pulsed drain current and supports high-voltage DC-DC converters and motor control circuits.

For engineers reviewing the SIHF9620S-GE3 datasheet, SIHF9620S-GE3 pinout, SIHF9620S-GE3 application, or SIHF9620S-GE3 equivalent, key selection criteria include its -200 V breakdown rating, low gate charge (22 nC), fast switching (15 ns turn-on delay), body diode recovery time (300–450 ns), and thermal resistance of 3.1 °C/W junction-to-case - critical for high-reliability industrial power stages.

Technical Context

This device uses planar vertical DMOS technology optimized for high-voltage P-channel operation, featuring a negative temperature coefficient for V_DS(on) and stable gate threshold voltage (-2.0 to -4.0 V). Its dynamic dV/dt rating (-5.0 V/ns) and robust avalanche capability support reliable operation in hard-switched topologies.

The D2PAK package enables high-power surface-mount mounting with low R_thJC (3.1 °C/W) and integrates a monolithic body diode with 7.0 V forward drop at -3.5 A. Gate drive simplicity is ensured by low input capacitance (350 pF C_iss) and moderate gate input resistance (0.9–5.7 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - supports high-side switching in 100–200 V DC bus applications without derating
R_DS(on)	1.5 Ω @ V_GS = -10 V - limits conduction loss to ≤ 18.4 W at -3.5 A, enabling compact heatsinking
Q_g	22 nC - determines gate driver power requirement and switching speed in PWM circuits
I_D (cont.)	-3.5 A @ T_C = 25 °C - defines maximum steady-state load current with active case cooling
t_r/t_f	25 ns / 15 ns - enables >1 MHz switching in resonant or soft-switching converters
trr / Q_rr	300–450 ns / 1.9–2.9 nC - quantifies reverse recovery burden in synchronous rectification or freewheeling paths
R_thJC	3.1 °C/W - allows direct thermal coupling to heatsink for 40 W power dissipation at ΔT = 124 °C

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; recommended PCB pad layout per Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to load return or ground in high-side configuration
Pin 2 (Gate)	Control terminal (G)	High-impedance input requiring < ±100 nA leakage; driven negative relative to source for turn-on
Pin 3 (Drain)	Power output (D)	Exposed metal tab - electrically and thermally connected to drain; must be isolated from other potentials

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without level-shifting circuitry in buck or half-bridge topologies
Dynamic dV/dt rating	-5.0 V/ns immunity prevents false turn-on during fast voltage transients in noisy power systems
Low Q_gd/Q_g ratio	10/22 = 45% - improves Miller immunity and reduces switching instability in high-dV/dt environments
Body diode with defined Q_rr	1.9–2.9 nC reverse recovery charge - enables predictable snubber design in inductive clamp circuits
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements for industrial and automotive end equipment

Applications

Motor Drive Inverter Stage	Industrial DC-DC Converter
Use Scenario: High-side switch in 3-phase BLDC inverter leg operating from 160 V DC bus. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side conduction with integrated body diode freewheeling. Use Value: -200 V V_DS rating ensures 20% margin over 160 V bus; 1.5 Ω R_DS(on) limits I²R loss to 18.4 W at full load.	Use Scenario: Primary-side switch in isolated flyback converter for 24 V industrial control supply. IC Role / Device Role / Timing Role: High-voltage P-channel switch enabling simplified gate drive in low-frequency (<100 kHz) topology. Use Value: -5.0 V/ns dV/dt rating suppresses spurious turn-on during transformer reset; 3.1 °C/W R_thJC supports 40 W dissipation with minimal heatsink.
AC-DC Power Supply OR-ing	Telecom Hot-Swap Circuit
Use Scenario: Reverse-polarity protection and OR-ing diode replacement in dual-input 48 V telecom rectifier. IC Role / Device Role / Timing Role: Low-loss P-channel pass transistor replacing Schottky diode in redundant power path. Use Value: 1.5 Ω R_DS(on) cuts conduction loss by >70% vs. 0.5 V Schottky; body diode V_SD = -7.0 V enables safe reverse-bias blocking.	Use Scenario: Inrush current limiter and fault isolation switch in 48 V hot-swap card cage. IC Role / Device Role / Timing Role: High-side power switch controlling board insertion with controlled slew rate and overcurrent shutdown. Use Value: -14 A pulsed rating handles surge currents; -200 V V_DS withstands line transients up to ±150 V per GR-1089-CORE.

Motor Drive Inverter Stage

Industrial DC-DC Converter

Use Scenario: High-side switch in 3-phase BLDC inverter leg operating from 160 V DC bus.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side conduction with integrated body diode freewheeling.

Use Value: -200 V V_DS rating ensures 20% margin over 160 V bus; 1.5 Ω R_DS(on) limits I²R loss to 18.4 W at full load.

Use Scenario: Primary-side switch in isolated flyback converter for 24 V industrial control supply.

IC Role / Device Role / Timing Role: High-voltage P-channel switch enabling simplified gate drive in low-frequency (<100 kHz) topology.

Use Value: -5.0 V/ns dV/dt rating suppresses spurious turn-on during transformer reset; 3.1 °C/W R_thJC supports 40 W dissipation with minimal heatsink.

AC-DC Power Supply OR-ing

Telecom Hot-Swap Circuit

Use Scenario: Reverse-polarity protection and OR-ing diode replacement in dual-input 48 V telecom rectifier.

IC Role / Device Role / Timing Role: Low-loss P-channel pass transistor replacing Schottky diode in redundant power path.

Use Value: 1.5 Ω R_DS(on) cuts conduction loss by >70% vs. 0.5 V Schottky; body diode V_SD = -7.0 V enables safe reverse-bias blocking.

Use Scenario: Inrush current limiter and fault isolation switch in 48 V hot-swap card cage.

IC Role / Device Role / Timing Role: High-side power switch controlling board insertion with controlled slew rate and overcurrent shutdown.

Use Value: -14 A pulsed rating handles surge currents; -200 V V_DS withstands line transients up to ±150 V per GR-1089-CORE.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9620SPbF	Same die and specs; leaded (Pb) terminations instead of Pb-free; identical R_DS(on), Q_g, and V_DS	Not suitable for RoHS-compliant designs; requires exemption documentation for EU/China markets	Select only if legacy compliance or solderability testing mandates SnPb finish
STP20PF06	Lower V_DS (-60 V), higher I_D (-20 A), lower R_DS(on) (0.18 Ω); TO-220 package	Unsuitable for >100 V systems; requires through-hole assembly and larger heatsink footprint	Choose only for cost-sensitive 48 V applications where surface-mount is not required

Compared with SIHF9620S-GE3, IRF9620SPbF offers identical electrical performance but lacks RoHS compliance, while STP20PF06 trades voltage capability for higher current and lower on-resistance in a non-surface-mount package - making SIHF9620S-GE3 the sole D2PAK-packaged -200 V P-channel option with verified 3.1 °C/W thermal performance.

Availability

SIHF9620S-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and high-reliability DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHF9620S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHF9620S-GE3 belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for demanding industrial and telecom power conversion where high breakdown voltage, low gate charge, and robust avalanche performance are essential.

FAQ

What is the maximum continuous drain current rating for SIHF9620S-GE3 at 100 °C case temperature?

The SIHF9620S-GE3 has a continuous drain current rating of -2.0 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation and must be applied when heatsink ambient exceeds 75 °C. The SIHF9620S-GE3 maintains full functionality across its -55 to +150 °C junction temperature range.

Does SIHF9620S-GE3 support logic-level gate drive?

No, SIHF9620S-GE3 is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and it is characterized for R_DS(on) at V_GS = -10 V. Driving SIHF9620S-GE3 with only -5 V or -3.3 V will result in significantly elevated on-resistance (>5 Ω) and excessive conduction loss. The SIHF9620S-GE3 requires a dedicated negative gate driver capable of delivering -10 V to achieve its specified 1.5 Ω R_DS(on).

What is the peak diode recovery dV/dt rating for SIHF9620S-GE3 and how is it tested?

The SIHF9620S-GE3 has a peak diode recovery dV/dt rating of -5.0 V/ns, measured under conditions of I_SD ≤ -3.5 A, dI/dt ≤ 95 A/μs, V_DD ≤ V_DS, and T_J ≤ 150 °C. This rating is validated using the clamped inductive test circuit shown in Figure 15 of the datasheet, with gate grounded during recovery to simulate worst-case commutation stress. The SIHF9620S-GE3's -5.0 V/ns rating confirms immunity to false turn-on during fast voltage transients in high-side switching applications.

Can SIHF9620S-GE3 be paralleled with identical units for higher current handling?

Yes, SIHF9620S-GE3 is explicitly designed for ease of paralleling, as noted in its Features list. Its positive temperature coefficient of R_DS(on) ensures current sharing stability across multiple devices. To achieve balanced operation, use matched gate resistors (≤ 50 Ω), symmetrical PCB layout with equal trace lengths, and common-source Kelvin connections. The SIHF9620S-GE3's low gate charge (22 nC) and uniform threshold voltage distribution further support reliable parallel operation in high-current inverters or UPS systems.

What is the thermal resistance from junction to ambient for SIHF9620S-GE3 in a standard PCB mount configuration?

In a standard 1" square FR-4 PCB mount configuration, the SIHF9620S-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 40 °C/W, as listed in the Thermal Resistance Ratings table. This value assumes no external heatsink and accounts for conduction through the PCB copper and convection from the board surface. For higher power operation, the SIHF9620S-GE3's 3.1 °C/W R_thJC enables direct attachment of the drain tab to an external heatsink, bypassing PCB thermal bottlenecks entirely.

SIHF9620S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHF9620S-GE3 FAQ

1.How can I place an order for SIHF9620S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF9620S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF9620S-GE3 reliable?

The price and inventory of SIHF9620S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF9620S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF9620S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF9620S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF9620S-GE3?

SIHF9620S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF9620S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF9620S-GE3?

For technical support, including SIHF9620S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF9620S-GE3 requirements.

6.How does Aetrix verify that SIHF9620S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF9620S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF9620S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF9620S-GE3?

All SIHF9620S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF9620S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF9620S-GE3 part is unused and in its original packaging.

Return procedure for SIHF9620S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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