Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF9630S-GE3

Name: SIHF9630S-GE3
Brand: Vishay Siliconix
SKU: SIHF9630S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHF9630S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHF9630S-GE3.pdf

Description:: MOSFET P-CH 200V 6.5A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,645

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHF9630S-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -200 V drain-source voltage, 0.80 Ω on-resistance at V_GS = -10 V, and -6.5 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and high-current DC/DC converter and motor control applications.

For engineers reviewing the SIHF9630S-GE3 datasheet, SIHF9630S-GE3 pinout, SIHF9630S-GE3 application, or SIHF9630S-GE3 equivalent, key selection criteria include its -200 V blocking capability, ruggedized avalanche rating, surface-mount D2PAK thermal performance, gate charge profile (Q_g = 29 nC), and body diode recovery characteristics (t_rr = 200–300 ns).

Technical Context

This device implements a third-generation planar vertical DMOS structure optimized for high-voltage P-channel operation. Its design integrates low R_DS(on) with robust unclamped inductive switching (E_AS = 500 mJ) and controlled dV/dt immunity (-5.0 V/ns peak diode recovery rate).

The MOSFET features a fully isolated gate with ±20 V V_GS rating, threshold voltage range of -2.0 to -4.0 V, and intrinsic body diode with V_SD = -6.5 V at I_S = -6.5 A and T_J = 25 °C - enabling synchronous rectification and reverse polarity protection without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-side switching in industrial 170 V AC-derived rails and telecom -48 V backup systems.
R_DS(on) @ V_GS = -10 V	0.80 Ω - Enables <1.5 W conduction loss at -6.5 A, suitable for thermally constrained PCB-mount designs.
Q_g	29 nC - Dictates gate driver power requirement; compatible with standard logic-level drivers (e.g., TC4427) at ≤100 kHz switching.
E_AS	500 mJ - Allows reliable unclamped inductive turn-off in motor drive H-bridge freewheeling paths without snubbers.
t_r/t_f	27 ns / 24 ns - Supports >500 kHz PWM in Class-D audio amplifiers and high-frequency DC/DC converters.
R_thJC	1.7 °C/W - Permits 74 W power dissipation with minimal heatsink when mounted on copper-clad D2PAK footprint.
I_D (T_C = 100 °C)	-4.0 A - Defines usable current derating in enclosed industrial enclosures with limited airflow.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-pin configuration (Drain, Gate, Source) in standard G-D-S pin order when viewed from top with marking side up and tab facing away.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left, marked)	Source (S)	Reference node for gate drive; connects to system ground or low-side return path in high-side switch configurations.
Pin 2 (Center)	Gate (G)	High-impedance control input; requires <±20 V rating and 29 nC charge delivery for full enhancement.
Pin 3 (Right, tab)	Drain (D)	Main power terminal and thermal interface; electrically and thermally tied to large copper pour via exposed metal pad.

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under transient overloads (I_AR = -6.4 A, E_AR = 7.4 mJ) without derating or external clamping.
Dynamic dV/dt immunity	-5.0 V/ns peak diode recovery dV/dt prevents false turn-on during fast commutation in half-bridge topologies.
Low Q_gd/Q_g ratio	15/29 ≈ 52 % - Improves switching efficiency and reduces Miller-induced oscillation risk in hard-switched converters.
RoHS-compliant, halogen-free	Meets IPC-1752A material declaration requirements; lead (Pb)-free terminations with matte tin plating.
PCB-mount power rating	3.0 W at T_A = 25 °C - Validated for compact power supplies using 1" FR-4 board area without heatsink.

Applications

Reverse Polarity Protection	High-Voltage DC/DC Converter
Use Scenario: Input protection circuit for industrial PLC I/O modules powered from -48 V telecom supplies. IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power rail entry; activated only during correct polarity insertion. Use Value: Eliminates need for series Schottky diode, reducing forward drop from ~0.4 V to <0.1 V at 5 A, improving efficiency by >1.5 %.	Use Scenario: Synchronous rectifier in isolated flyback converter delivering 24 V/3 A from 200 V DC bus. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing output diode; driven with complementary gate signal referenced to secondary ground. Use Value: Reduces conduction loss by 65 % vs. 100 V Schottky (e.g., SB5100), enabling >92 % efficiency at full load.
Motor Drive Freewheeling	AC-DC Power Supply Standby Switch
Use Scenario: Freewheeling path in brushed DC motor H-bridge driving 120 V DC motors in automated gate systems. IC Role / Device Role / Timing Role: Body diode and channel conduction path during inductive current recirculation; handles repetitive avalanche energy. Use Value: Withstands 500 mJ single-pulse avalanche events, allowing elimination of external TVS/clamp circuits and reducing BOM count by one component.	Use Scenario: Main power switch disconnecting auxiliary standby circuitry in enterprise server PSUs after AC loss detection. IC Role / Device Role / Timing Role: High-voltage hold-off switch isolating -12 V standby rail from primary-side fault conditions. Use Value: -200 V V_DS rating ensures safe operation during line surges up to 170 V RMS, exceeding EN 61000-4-5 Level 4 immunity requirements.

Reverse Polarity Protection

High-Voltage DC/DC Converter

Use Scenario: Input protection circuit for industrial PLC I/O modules powered from -48 V telecom supplies.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power rail entry; activated only during correct polarity insertion.

Use Value: Eliminates need for series Schottky diode, reducing forward drop from ~0.4 V to <0.1 V at 5 A, improving efficiency by >1.5 %.

Use Scenario: Synchronous rectifier in isolated flyback converter delivering 24 V/3 A from 200 V DC bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing output diode; driven with complementary gate signal referenced to secondary ground.

Use Value: Reduces conduction loss by 65 % vs. 100 V Schottky (e.g., SB5100), enabling >92 % efficiency at full load.

Motor Drive Freewheeling

AC-DC Power Supply Standby Switch

Use Scenario: Freewheeling path in brushed DC motor H-bridge driving 120 V DC motors in automated gate systems.

IC Role / Device Role / Timing Role: Body diode and channel conduction path during inductive current recirculation; handles repetitive avalanche energy.

Use Value: Withstands 500 mJ single-pulse avalanche events, allowing elimination of external TVS/clamp circuits and reducing BOM count by one component.

Use Scenario: Main power switch disconnecting auxiliary standby circuitry in enterprise server PSUs after AC loss detection.

IC Role / Device Role / Timing Role: High-voltage hold-off switch isolating -12 V standby rail from primary-side fault conditions.

Use Value: -200 V V_DS rating ensures safe operation during line surges up to 170 V RMS, exceeding EN 61000-4-5 Level 4 immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9630SPbF	Same die and specs, but Pb-containing terminations; not RoHS-compliant.	Restricted to legacy military/aerospace programs requiring SnPb solder compatibility.	Select only if Pb-based assembly process is mandated and halogen-free compliance is waived.
STP20PF06	-60 V V_DS, 0.12 Ω R_DS(on), 20 A I_D; lower voltage, higher current, smaller TO-220 package.	Not suitable for >100 V applications; lacks avalanche rating and dV/dt immunity specs.	Choose only for low-voltage (<60 V), high-current linear regulator or battery disconnect use cases where voltage margin is sufficient.

Compared with SIHF9630S-GE3, IRF9630SPbF offers identical electrical performance but fails modern environmental compliance, while STP20PF06 trades voltage capability for current density and package size - making neither a drop-in replacement, but both viable alternatives within narrower voltage or regulatory constraints.

Availability

SIHF9630S-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and reverse polarity protection circuits requiring stable component supply, long-term lifecycle support, and RoHS/halogen-free compliance.

Supply support for SIHF9630S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive environments.

The SIHF9630S-GE3 belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for ruggedness in unclamped inductive switching and efficiency-critical high-side switching applications.

FAQ

What is the maximum junction temperature rating for SIHF9630S-GE3?

The SIHF9630S-GE3 has an operating junction temperature range of -55 °C to +150 °C. Its absolute maximum T_J is 150 °C, and thermal design must ensure this limit is not exceeded under worst-case power dissipation and ambient conditions. Derating curves in Figure 9 confirm -4.0 A continuous current at T_C = 100 °C, directly tied to this junction limit.

Does SIHF9630S-GE3 support logic-level gate drive?

No, SIHF9630S-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is -2.0 V to -4.0 V, and it requires -10 V V_GS to achieve R_DS(on) = 0.80 Ω. Driving it with 3.3 V or 5 V logic will result in incomplete enhancement and excessive conduction loss. A dedicated negative gate driver or level-shifting circuit is required for reliable operation.

What is the body diode reverse recovery time of SIHF9630S-GE3?

The SIHF9630S-GE3 body diode reverse recovery time (t_rr) is specified as 200–300 ns at T_J = 25 °C, I_F = -6.5 A, and dI/dt = 100 A/μs. This value is critical for synchronous rectifier designs, as faster t_rr reduces switching losses and EMI generation during commutation in DC/DC converters.

Can SIHF9630S-GE3 be paralleled for higher current handling?

Yes, SIHF9630S-GE3 is explicitly designed for ease of paralleling, as noted in its datasheet features. Its positive temperature coefficient of R_DS(on) (see Fig. 4) promotes current sharing across multiple devices. For stable operation, matched gate resistors and symmetrical PCB layout are required to minimize loop inductance and gate drive skew.

Is SIHF9630S-GE3 suitable for avalanche energy absorption in motor drive circuits?

Yes, SIHF9630S-GE3 is repetitively avalanche rated with E_AR = 7.4 mJ and single-pulse E_AS = 500 mJ. In motor drive freewheeling applications, it safely absorbs inductive energy during abrupt current interruption - verified per test condition c (V_DD = -50 V, L = 17 mH, I_AS = -6.5 A). This eliminates need for external snubbers in many H-bridge implementations.

SIHF9630S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHF9630S-GE3 FAQ

1.How can I place an order for SIHF9630S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF9630S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF9630S-GE3 reliable?

The price and inventory of SIHF9630S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF9630S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF9630S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF9630S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF9630S-GE3?

SIHF9630S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF9630S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF9630S-GE3?

For technical support, including SIHF9630S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF9630S-GE3 requirements.

6.How does Aetrix verify that SIHF9630S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF9630S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF9630S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF9630S-GE3?

All SIHF9630S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF9630S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF9630S-GE3 part is unused and in its original packaging.

Return procedure for SIHF9630S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …