My Inquiry
My Account
Vishay Siliconix SIHF9630STRL-GE3
- Part No.:
- SIHF9630STRL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHF9630STRL-GE3.pdf
- Description:
- MOSFET P-CH 200V 6.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:783
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHF9630STRL-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V drain-source voltage, 0.80 Ω RDS(on) at VGS = -10 V, and -6.5 A continuous drain current at TC = 25 °C. It delivers ruggedized switching performance in high-voltage DC-DC converters and industrial motor control circuits.
For engineers reviewing the SIHF9630STRL-GE3 datasheet, SIHF9630STRL-GE3 pinout, SIHF9630STRL-GE3 application, or SIHF9630STRL-GE3 equivalent, key selection criteria include its repetitive avalanche rating (7.4 mJ), fast turn-off delay (28 ns), low gate charge (29 nC), and compatibility with standard D2PAK thermal pad layouts on FR-4 PCBs.
Technical Context
This device operates as a high-side switch in negative-rail configurations, leveraging its P-channel architecture to simplify gate drive design in buck regulators and polarity-reversal circuits. Its -200 V VDS rating and -4.0 V typical VGS(th) enable reliable blocking in 120–170 VDC bus systems.
The MOSFET integrates a robust body diode with 200–300 ns reverse recovery time and 1.9–2.9 μC Qrr, supporting synchronous rectification in flyback topologies. Its dV/dt immunity of -5.0 V/ns and 500 mJ single-pulse avalanche energy ensure resilience against inductive switching transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports operation in 170 VDC nominal bus applications with 30 V margin. |
| RDS(on) @ VGS = -10 V | 0.80 Ω - Enables ≤ 34 W conduction loss at -6.5 A, suitable for medium-power switching. |
| Qg | 29 nC - Low gate charge reduces driver power demand and enables <100 kHz PWM operation. |
| ID (continuous, TC = 25 °C) | -6.5 A - Delivers stable output in heatsinked 50–75 W power stages. |
| EAS | 500 mJ - Withstands unclamped inductive energy spikes without failure in relay drivers. |
| RthJC | 1.7 °C/W - Allows direct thermal coupling to heatsinks for sustained >40 W dissipation. |
| Body diode VSD | -6.5 V @ IS = -6.5 A - Limits forward conduction loss during freewheeling in half-bridge legs. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-pin configuration optimized for high-current PCB mounting and thermal management on 1" FR-4 squares.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab/Drain) | Drain (D) | Primary high-current path and thermal interface; electrically connected to metal tab for heatsinking. |
| Pin 2 (Source) | Source (S) | Reference node for gate drive and load return; connects to negative rail in high-side switch topology. |
| Pin 3 (Gate) | Gate (G) | Control input requiring -10 V for full enhancement; sensitive to ESD with ±20 V absolute max rating. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting gate drivers in negative-rail systems. |
| Repetitive avalanche rated | 7.4 mJ energy handling allows safe operation under repeated inductive turn-off stress. |
| Dynamic dV/dt rating | -5.0 V/ns immunity prevents false turn-on during fast voltage transients in noisy environments. |
| Surface-mount D2PAK | Combines 74 W power dissipation capability with automated assembly compatibility and PCB thermal relief. |
| RoHS-compliant, halogen-free | Meets IPC-1752A material declarations; GE3 suffix indicates lead-free and halogen-free construction. |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
|
Use Scenario: Bidirectional H-bridge driver for 100–150 VDC brushed motors in factory automation. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor phase voltage with precise dead-time management. Use Value: -200 V VDS rating ensures margin against back-EMF spikes; 0.80 Ω RDS(on) limits I²R heating at 6 A stall current. |
Use Scenario: Primary-side synchronous rectifier in isolated 120 VDC input flyback converter for industrial sensors. IC Role / Device Role / Timing Role: Freewheeling switch conducting during transformer reset phase with controlled body diode recovery. Use Value: 200–300 ns trr and 1.9–2.9 μC Qrr minimize switching losses and EMI during diode commutation. |
| Power Supply OR-ing Circuits | Relay and Solenoid Drivers |
|
Use Scenario: Redundant 48 VDC power supply combiner in telecom shelf systems. IC Role / Device Role / Timing Role: Back-to-back P-channel MOSFET pair implementing low-loss, bidirectional OR-ing function. Use Value: Low RDS(on) reduces voltage drop across each device; -200 V rating accommodates transient surges up to ±150 V. |
Use Scenario: Solid-state replacement for electromechanical relays driving 24–48 VDC solenoids in HVAC actuators. IC Role / Device Role / Timing Role: Inductive load switch with integrated avalanche energy absorption during coil de-energization. Use Value: 500 mJ single-pulse EAS safely clamps inductive kickback without external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9630STRLPbF | Same die and specs, but Pb-containing terminations; not RoHS-compliant. | Restricted to legacy industrial designs where leaded solder is mandated. | Select only if compliance with RoHS Directive 2011/65/EU is not required. |
| IXTP10P20P | Higher RDS(on) (1.2 Ω), lower Qg (16 nC), same -200 V rating and TO-220 package. | Lower conduction loss not critical; prioritizes faster switching over thermal efficiency. | Prefer when board space allows TO-220 and gate drive strength is limited. |
Compared with SIHF9630STRL-GE3, IRF9630STRLPbF offers identical electrical performance but lacks RoHS compliance, while IXTP10P20P trades higher on-resistance for reduced gate charge and different packaging-making it suitable for less thermally constrained, higher-frequency designs.
Availability
SIHF9630STRL-GE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, and relay/solenoid driver applications requiring stable component supply and long-term manufacturing continuity.
Supply support for SIHF9630STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The SIHF9630STRL-GE3 belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered for demanding industrial and power conversion applications where avalanche robustness and surface-mount thermal efficiency are critical.
FAQ
What is the maximum continuous drain current for SIHF9630STRL-GE3 at 100 °C case temperature?
The SIHF9630STRL-GE3 supports -4.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated with actual PCB layout and heatsinking. The SIHF9630STRL-GE3 datasheet confirms this value under standard test conditions with proper thermal management.
Does SIHF9630STRL-GE3 have a built-in body diode, and what are its key parameters?
Yes, SIHF9630STRL-GE3 integrates a body diode inherent to its vertical P-channel structure. Key parameters include VSD = -6.5 V at IS = -6.5 A, trr = 200–300 ns, and Qrr = 1.9–2.9 μC at TJ = 25 °C. These values are measured with VGS = 0 V and define freewheeling behavior in inductive switching applications involving SIHF9630STRL-GE3.
Can SIHF9630STRL-GE3 be used in avalanche mode, and what is its rated energy?
Yes, SIHF9630STRL-GE3 is explicitly rated for repetitive avalanche operation with EAR = 7.4 mJ per pulse and single-pulse EAS = 500 mJ. These ratings assume specified test conditions: VDD = -50 V, IAS = -6.5 A, L = 17 mH, and Rg = 25 Ω. Operation beyond these limits requires validation using the SIHF9630STRL-GE3 SOA curves and thermal models.
What is the gate threshold voltage range for SIHF9630STRL-GE3, and how does it affect drive requirements?
The SIHF9630STRL-GE3 has a gate-source threshold voltage VGS(th) ranging from -2.0 V to -4.0 V at ID = -250 μA. This means logic-level gate drive (e.g., -5 V) fully enhances the device, while -3 V may yield marginal conduction. For reliable switching, -10 V is recommended to achieve the specified 0.80 Ω RDS(on), as confirmed in the SIHF9630STRL-GE3 datasheet.
Is SIHF9630STRL-GE3 compatible with standard D2PAK footprint and thermal pad layouts?
Yes, SIHF9630STRL-GE3 uses the JEDEC-standard TO-263AB (D2PAK) outline with documented pad dimensions: 0.420" × 0.355" source/drain pads and 0.145" gate pad spacing. Vishay's recommended minimum pads (Document 73397) apply directly to SIHF9630STRL-GE3, ensuring manufacturability and thermal performance on FR-4 PCBs.
SIHF9630STRL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHF9630STRL-GE3 FAQ
1.How can I place an order for SIHF9630STRL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHF9630STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHF9630STRL-GE3 reliable?
The price and inventory of SIHF9630STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF9630STRL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHF9630STRL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF9630STRL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHF9630STRL-GE3?
SIHF9630STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHF9630STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHF9630STRL-GE3?
For technical support, including SIHF9630STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF9630STRL-GE3 requirements.
6.How does Aetrix verify that SIHF9630STRL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHF9630STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF9630STRL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHF9630STRL-GE3?
All SIHF9630STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF9630STRL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHF9630STRL-GE3 part is unused and in its original packaging.
Return procedure for SIHF9630STRL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHF9630STRL-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
