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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF9640S-GE3

Name: SIHF9640S-GE3
Brand: Vishay Siliconix
SKU: SIHF9640S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF9640S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHF9640S-GE3.pdf

Description:: MOSFET P-CH 200V 11A D2PAK

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Product details

Overview

SIHF9640S-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the SIHF9640S-GE3 datasheet, SIHF9640S-GE3 pinout, SIHF9640S-GE3 application, or SIHF9640S-GE3 equivalent, key selection criteria include its -200 V blocking capability, 44 nC total gate charge, 700 mJ single-pulse avalanche energy, thermal resistance of 1.0 °C/W junction-to-case, and compatibility with standard D2PAK PCB footprints and reflow profiles.

Technical Context

This device employs third-generation trench-gate silicon technology to achieve low on-resistance while maintaining ruggedness against unclamped inductive switching. Its gate threshold voltage range of -2.0 V to -4.0 V ensures reliable turn-on with standard -10 V gate drive and stable operation across -55 °C to +150 °C junction temperature.

The SIHF9640S-GE3 integrates a fast-recovery body diode with 250–300 ns reverse recovery time and 2.9–3.6 μC Q_rr, enabling efficient synchronous rectification and freewheeling in high-frequency topologies. Its dynamic dV/dt rating of -5.0 V/ns and 150 A/μs di/dt capability support robust operation in noisy industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-voltage bus isolation in industrial power supplies and motor drives.
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at 11 A, reducing heatsink requirements.
Q_g	44 nC - Determines gate driver power and switching speed; compatible with common isolated gate drivers.
E_AS	700 mJ - Allows safe operation under unclamped inductive load conditions without external snubbers.
R_thJC	1.0 °C/W - Enables high-power dissipation (125 W) when mounted on a heatsink via the exposed drain tab.
I_D (cont.)	-11 A @ T_C = 25 °C - Sustains full-rated current in compact surface-mount designs with adequate thermal management.
V_GS(th)	-2.0 to -4.0 V - Ensures clean turn-on with standard logic-level negative gate bias and avoids spurious conduction.

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline conforming to JEDEC TO-263AB standard; recommended footprint per Vishay AN826 (0.420" × 0.355" pad, 0.145" lead pitch).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Electrically and thermally connected to exposed copper tab; must be soldered to large copper pour or heatsink.
Pin 2	Gate (G)	High-impedance control terminal; requires low-inductance gate loop to minimize ringing during fast switching.
Pin 3	Source (S)	Reference node for gate drive and load return path; connects to system ground or floating rail depending on topology.

Key Features

Feature	Design Value
Repetitive avalanche rated	13 mJ per pulse - Enables reliable operation in hard-switched flyback and forward converters without derating.
Dynamic dV/dt immunity	-5.0 V/ns - Suppresses false turn-on in high-noise gate-drive environments such as motor phase-legs.
Fast switching	14 ns turn-on delay, 38 ns fall time - Reduces switching losses in 100–500 kHz SMPS designs.
Surface-mount packaging	D2PAK (TO-263) - Delivers highest power density among SMT packages with 125 W thermal capability.
RoHS-compliant & halogen-free	SiHF9640S-GE3 suffix - Meets IPC-1752A material declaration requirements for industrial and automotive end equipment.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: Half-bridge high-side switch in 48–100 V BLDC motor gate drivers. IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor phase voltage with bootstrap-free operation. Use Value: Eliminates need for high-side gate driver ICs; leverages -200 V rating to withstand back-EMF transients up to 150 V.	Use Scenario: Primary-side synchronous rectifier in isolated 200 V input telecom power supply. IC Role / Device Role / Timing Role: High-voltage secondary-side switch in active clamp forward or LLC resonant converter. Use Value: 700 mJ E_AS absorbs leakage inductance energy without snubber losses; 0.50 Ω R_DS(on) maintains >95% efficiency at full load.
Uninterruptible Power Supplies	Industrial PLC Output Modules
Use Scenario: Battery disconnect switch in 120 VDC UPS backup stage. IC Role / Device Role / Timing Role: Solid-state high-voltage isolation switch replacing mechanical relays. Use Value: Repetitive avalanche rating ensures survival during battery short-circuit events; -11 A rating supports 1 kVA output capacity.	Use Scenario: Isolated digital output driver for 24–48 V DC field devices in programmable logic controllers. IC Role / Device Role / Timing Role: Load-switching MOSFET providing overcurrent-protected, fast-turnoff outputs. Use Value: Fast 38 ns fall time enables precise timing control; body diode Q_rr < 3.6 μC minimizes cross-conduction risk in multiplexed outputs.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: Half-bridge high-side switch in 48–100 V BLDC motor gate drivers.

IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor phase voltage with bootstrap-free operation.

Use Value: Eliminates need for high-side gate driver ICs; leverages -200 V rating to withstand back-EMF transients up to 150 V.

Use Scenario: Primary-side synchronous rectifier in isolated 200 V input telecom power supply.

IC Role / Device Role / Timing Role: High-voltage secondary-side switch in active clamp forward or LLC resonant converter.

Use Value: 700 mJ E_AS absorbs leakage inductance energy without snubber losses; 0.50 Ω R_DS(on) maintains >95% efficiency at full load.

Uninterruptible Power Supplies

Industrial PLC Output Modules

Use Scenario: Battery disconnect switch in 120 VDC UPS backup stage.

IC Role / Device Role / Timing Role: Solid-state high-voltage isolation switch replacing mechanical relays.

Use Value: Repetitive avalanche rating ensures survival during battery short-circuit events; -11 A rating supports 1 kVA output capacity.

Use Scenario: Isolated digital output driver for 24–48 V DC field devices in programmable logic controllers.

IC Role / Device Role / Timing Role: Load-switching MOSFET providing overcurrent-protected, fast-turnoff outputs.

Use Value: Fast 38 ns fall time enables precise timing control; body diode Q_rr < 3.6 μC minimizes cross-conduction risk in multiplexed outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9640SPbF	Same silicon die and D2PAK package, but with leaded terminations (non-RoHS); identical R_DS(on), Q_g, and avalanche ratings.	Restricted to legacy industrial systems requiring Pb-based solder compatibility; not suitable for new RoHS-compliant designs.	Select IRF9640SPbF only if Pb-containing assembly process is mandated and no requalification is possible.
SIHF9640L-GE3	I2PAK (TO-262) through-hole package; same electrical specs but higher R_thJA (62 °C/W vs. 40 °C/W PCB mount) and lower PD (3.0 W vs. 125 W with heatsink).	Better suited for low-profile, low-power, or prototyping applications where D2PAK thermal performance is unnecessary.	Choose SIHF9640L-GE3 when board height constraints prohibit D2PAK or when manual assembly is required.

Compared with SIHF9640S-GE3, IRF9640SPbF offers identical performance but lacks RoHS compliance, while SIHF9640L-GE3 trades thermal capability for mechanical flexibility-neither is pin-compatible due to differing package outlines and mounting methods.

Availability

SIHF9640S-GE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC conversion, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHF9640S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHF9640S-GE3 belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered specifically for ruggedized switching in harsh-environment power conversion and motor drive systems.

FAQ

What is the maximum junction temperature rating for the SIHF9640S-GE3?

The SIHF9640S-GE3 has an operating junction and storage temperature range of -55 °C to +150 °C. This 150 °C maximum junction temperature enables reliable operation in high-ambient industrial environments when properly heatsinked. The device's R_thJC of 1.0 °C/W allows direct thermal coupling to a heatsink, and its SOA curve (Fig. 8) confirms safe operation up to this limit under pulsed conditions. Always verify actual T_J using measured case temperature and power dissipation in the final design.

Does the SIHF9640S-GE3 have a built-in body diode, and what are its key parameters?

Yes, the SIHF9640S-GE3 integrates a fast-recovery body diode inherent to its vertical P-channel MOSFET structure. Key diode parameters include a forward voltage V_SD of -5.0 V at I_S = -11 A and T_J = 25 °C, reverse recovery time t_rr of 250–300 ns, and reverse recovery charge Q_rr of 2.9–3.6 μC. These values are measured under standardized conditions (T_J = 25 °C, I_F = -11 A, dI/dt = 100 A/μs) and support use in freewheeling and synchronous rectification roles without external diodes.

Can the SIHF9640S-GE3 be used in avalanche mode, and what energy level is rated?

Yes, the SIHF9640S-GE3 is explicitly rated for repetitive avalanche operation with 13 mJ per pulse and single-pulse avalanche energy E_AS of 700 mJ. These ratings are validated per test conditions in the datasheet (V_DD = -50 V, L = 8.7 mH, R_g = 25 Ω, I_AS = -11 A). Avalanche capability allows safe clamping of inductive kickback in relay drivers, solenoid controls, and hard-switched converters-eliminating the need for external TVS or snubber networks in many cases.

What is the gate threshold voltage range for the SIHF9640S-GE3, and how does it affect drive requirements?

The SIHF9640S-GE3 has a gate-source threshold voltage V_GS(th) range of -2.0 V to -4.0 V, specified at V_DS = V_GS and I_D = -250 μA. This negative threshold confirms its P-channel enhancement-mode behavior and means the device turns on fully at V_GS ≤ -10 V. To ensure low R_DS(on) and avoid partial turn-on, gate drive must swing below -2 V (ideally to -10 V to -15 V) with sufficient current to charge 44 nC Q_g rapidly. Logic-level drivers are insufficient; dedicated negative-bias gate drivers are recommended.

Is the SIHF9640S-GE3 RoHS-compliant, and what does the "-GE3" suffix indicate?

Yes, the SIHF9640S-GE3 is RoHS-compliant and halogen-free. The "-GE3" suffix denotes Vishay's standard green, lead (Pb)-free, and halogen-free termination specification per IPC-1752A. It uses matte tin plating over copper leads and conforms to JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30 °C/60% RH). This makes SIHF9640S-GE3 suitable for modern automated SMT assembly lines and export-compliant industrial products without exemption requests.

SIHF9640S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHF9640S-GE3 FAQ

1.How can I place an order for SIHF9640S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF9640S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF9640S-GE3 reliable?

The price and inventory of SIHF9640S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF9640S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF9640S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF9640S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF9640S-GE3?

SIHF9640S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF9640S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF9640S-GE3?

For technical support, including SIHF9640S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF9640S-GE3 requirements.

6.How does Aetrix verify that SIHF9640S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF9640S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF9640S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF9640S-GE3?

All SIHF9640S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF9640S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF9640S-GE3 part is unused and in its original packaging.

Return procedure for SIHF9640S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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