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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF9Z24STRR-GE3

Name: SIHF9Z24STRR-GE3
Brand: Vishay Siliconix
SKU: SIHF9Z24STRR-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF9Z24STRR-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHF9Z24STRR-GE3.pdf

Description:: MOSFET P-CHANNEL 60V

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Product details

Overview

SIHF9Z24STRR-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V V_DS, 0.28 Ω R_DS(on) at V_GS = -10 V, and -11 A continuous drain current at T_C = 25 °C. It delivers fast switching, full avalanche ruggedness, and 175 °C junction operation-used in DC-DC synchronous rectification, high-side load switching, and industrial motor control.

For engineers reviewing the SIHF9Z24STRR-GE3 datasheet, SIHF9Z24STRR-GE3 pinout, SIHF9Z24STRR-GE3 application, or SIHF9Z24STRR-GE3 equivalent, key selection criteria include its -60 V blocking capability, low gate charge (19 nC), body diode recovery performance (t_rr = 100–200 ns), thermal resistance (R_thJC = 2.5 °C/W), and RoHS-compliant lead-free/halogen-free construction.

Technical Context

This device employs third-generation trench MOSFET process technology to achieve low on-resistance per die area while maintaining robust avalanche energy rating (E_AS = 240 mJ) and high dV/dt immunity (-4.5 V/ns). Its P-channel topology enables high-side switching without level-shifting circuitry in buck converters and OR-ing applications.

The D2PAK package provides low thermal resistance to case (2.5 °C/W) and supports up to 60 W power dissipation at T_C = 25 °C. Gate drive requirements are defined by V_GS(th) = -2.0 to -4.0 V and total gate charge Q_g = 19 nC, enabling compatibility with standard logic-level controllers operating down to -10 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum reverse-blocking voltage for high-side switch or reverse-polarity protection circuits
R_DS(on) @ V_GS = -10 V	0.28 Ω - Enables ≤ 3.4 W conduction loss at -11 A, critical for thermally constrained PCB layouts
Q_g	19 nC - Determines gate driver power requirement and switching transition time in hard-switched topologies
I_D (continuous, T_C = 25 °C)	-11 A - Sustained current handling capacity under heatsink-cooled conditions
E_AS	240 mJ - Single-pulse unclamped inductive switching energy tolerance, supporting reliable operation in relay/snubberless designs
t_rr (body diode)	100–200 ns - Fast reverse recovery minimizes cross-conduction losses in synchronous rectifiers
R_thJC	2.5 °C/W - Enables direct thermal path to heatsink, supporting high-power density board-level integration

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) in standard pin order: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control electrode	Receives negative V_GS to turn on; requires <19 nC charge for full enhancement; threshold -2.0 to -4.0 V
Drain (Pin 2 / Tab)	High-side power terminal	Electrically and thermally connected to exposed copper tab; must be soldered to large copper pour or heatsink
Source (Pin 3)	Reference node / return path	Connected to system ground or floating rail; carries full load current and defines V_GS reference

Key Features

Feature	Design Value
P-channel enhancement mode	Enables high-side switching without bootstrap or isolated gate drive; simplifies power stage layout in buck and OR-ing circuits
175 °C maximum junction temperature	Supports operation in harsh environments (industrial, automotive under-hood) with derated current above 100 °C
Fully avalanche rated	Guarantees single-pulse survivability up to 240 mJ, eliminating need for external snubbers in inductive load switching
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709B, suitable for green manufacturing and export compliance
Low C_iss (570 pF) and C_oss (360 pF)	Reduces capacitive switching losses and improves EMI behavior in high-frequency DC-DC converters (>100 kHz)

Applications

Industrial Motor Control	DC-DC Synchronous Rectification
Use Scenario: High-side gate drive for brushed DC motor H-bridge or BLDC phase-leg upper switch. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with no level shifter required. Use Value: Leverages -60 V rating and 0.28 Ω R_DS(on) to minimize conduction loss and thermal rise during continuous 11 A operation.	Use Scenario: Secondary-side synchronous rectifier in isolated flyback or forward converter. IC Role / Device Role / Timing Role: Body diode and channel conduct current during freewheeling phase; driven by transformer-coupled or controller-synchronized gate signal. Use Value: 100–200 ns t_rr and low Q_g reduce switching loss and improve efficiency over Schottky diodes at >24 V output.
Reverse Polarity Protection	Hot-Swap / OR-ing Circuit
Use Scenario: Input protection for 24–48 V industrial power supplies against accidental battery reversal. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive rail; conducts only when V_IN polarity is correct. Use Value: -60 V V_DS withstands transients; low R_DS(on) limits voltage drop to <320 mV at 11 A, reducing heat generation.	Use Scenario: Redundant power supply OR-ing in telecom or server backplanes. IC Role / Device Role / Timing Role: High-side switch controlling power path from each supply; body diode blocks reverse current when inactive. Use Value: Fast t_rr and low Q_gd (11 nC) enable rapid turn-off to prevent backfeed during supply switchover.

Industrial Motor Control

DC-DC Synchronous Rectification

Use Scenario: High-side gate drive for brushed DC motor H-bridge or BLDC phase-leg upper switch.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with no level shifter required.

Use Value: Leverages -60 V rating and 0.28 Ω R_DS(on) to minimize conduction loss and thermal rise during continuous 11 A operation.

Use Scenario: Secondary-side synchronous rectifier in isolated flyback or forward converter.

IC Role / Device Role / Timing Role: Body diode and channel conduct current during freewheeling phase; driven by transformer-coupled or controller-synchronized gate signal.

Use Value: 100–200 ns t_rr and low Q_g reduce switching loss and improve efficiency over Schottky diodes at >24 V output.

Reverse Polarity Protection

Hot-Swap / OR-ing Circuit

Use Scenario: Input protection for 24–48 V industrial power supplies against accidental battery reversal.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive rail; conducts only when V_IN polarity is correct.

Use Value: -60 V V_DS withstands transients; low R_DS(on) limits voltage drop to <320 mV at 11 A, reducing heat generation.

Use Scenario: Redundant power supply OR-ing in telecom or server backplanes.

IC Role / Device Role / Timing Role: High-side switch controlling power path from each supply; body diode blocks reverse current when inactive.

Use Value: Fast t_rr and low Q_gd (11 nC) enable rapid turn-off to prevent backfeed during supply switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z24SPbF	Same silicon die and specs, but leaded (Pb-containing) terminations; not RoHS-compliant	Restricted to legacy or non-RoHS programs; incompatible with modern assembly processes requiring Pb-free reflow	Select only if RoHS exemption applies and legacy qualification is required
SiHF9Z24STRL-GE3	Identical electrical specs and package; differs only in tape-and-reel packaging (3.5 kW vs. 1.0 kW reel size)	No functional difference; reel size affects pick-and-place feeder compatibility and minimum order quantity	Prefer for high-volume SMT production where larger reels reduce changeover frequency

Compared with IRF9Z24SPbF and SiHF9Z24STRL-GE3, SIHF9Z24STRR-GE3 offers identical P-channel MOSFET performance in a RoHS-compliant, halogen-free D2PAK package on a 1.0 kW tape-and-reel-making it optimal for new designs requiring environmental compliance and standard SMT line integration.

Availability

SIHF9Z24STRR-GE3 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC synchronous rectification, and reverse polarity protection requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHF9Z24STRR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHF9Z24STRR-GE3 belongs to Vishay's third-generation power MOSFET family, engineered for high-current, high-temperature industrial and power conversion applications demanding low R_DS(on), fast switching, and avalanche robustness.

FAQ

What is the maximum continuous drain current for SIHF9Z24STRR-GE3 at 100 °C case temperature?

The SIHF9Z24STRR-GE3 supports -7.7 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify heatsinking to maintain T_C ≤ 100 °C when operating near this current level.

Does SIHF9Z24STRR-GE3 have avalanche capability, and how is it specified?

Yes, SIHF9Z24STRR-GE3 is fully avalanche rated with a single-pulse avalanche energy rating (E_AS) of 240 mJ under test conditions of V_DD = -25 V, I_AS = -11 A, and T_J = 25 °C. Repetitive avalanche is also supported at I_AR = -11 A and E_AR = 6.0 mJ, enabling reliable operation in inductive switching applications without external snubbers.

What is the gate threshold voltage range for SIHF9Z24STRR-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHF9Z24STRR-GE3 is specified from -2.0 V to -4.0 V at V_DS = V_GS and I_D = -250 μA. This range ensures consistent turn-on behavior across production lots and temperature, supporting reliable logic-level gate drive with controllers capable of delivering ≥ -4.0 V gate swing.

Can SIHF9Z24STRR-GE3 be used in synchronous rectifier applications, and what body diode parameters matter most?

Yes, SIHF9Z24STRR-GE3 is suitable for synchronous rectification due to its fast body diode with t_rr = 100–200 ns and Q_rr = 320–640 nC at T_J = 25 °C. These values directly impact commutation loss and EMI; lower t_rr reduces shoot-through risk during gate transitions, while low Q_rr minimizes stored charge-induced voltage spikes in high-frequency converters.

What is the thermal resistance from junction to case (R_thJC) for SIHF9Z24STRR-GE3, and how does it affect heatsink design?

The maximum junction-to-case thermal resistance (R_thJC) for SIHF9Z24STRR-GE3 is 2.5 °C/W. This value defines the thermal bottleneck between die and heatsink interface; for example, at 60 W power dissipation, ΔT = 150 °C implies T_J = T_C + 150 °C. Effective heatsinking must keep T_C ≤ 25 °C to avoid exceeding the 175 °C T_J(max) limit, requiring low-thermal-resistance mounting (e.g., thermal paste + flat copper base).

SIHF9Z24STRR-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHF9Z24STRR-GE3 FAQ

1.How can I place an order for SIHF9Z24STRR-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF9Z24STRR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF9Z24STRR-GE3 reliable?

The price and inventory of SIHF9Z24STRR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF9Z24STRR-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF9Z24STRR-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF9Z24STRR-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF9Z24STRR-GE3?

SIHF9Z24STRR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF9Z24STRR-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF9Z24STRR-GE3?

For technical support, including SIHF9Z24STRR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF9Z24STRR-GE3 requirements.

6.How does Aetrix verify that SIHF9Z24STRR-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF9Z24STRR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF9Z24STRR-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF9Z24STRR-GE3?

All SIHF9Z24STRR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF9Z24STRR-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF9Z24STRR-GE3 part is unused and in its original packaging.

Return procedure for SIHF9Z24STRR-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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