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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHF9Z34STRL-GE3

Name: SIHF9Z34STRL-GE3
Brand: Vishay Siliconix
SKU: SIHF9Z34STRL-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHF9Z34STRL-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHF9Z34STRL-GE3.pdf

Description:: MOSFET P-CHANNEL 60V

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Product details

Overview

SIHF9Z34STRL-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for -60 V V_DS, 18 A continuous drain current at T_C = 25 °C, and 0.14 Ω R_DS(on) at V_GS = -10 V. It operates up to 175 °C junction temperature and is fully avalanche rated for robustness in inductive switching applications such as DC-DC synchronous rectification and high-side load switching.

For engineers reviewing the SIHF9Z34STRL-GE3 datasheet, SIHF9Z34STRL-GE3 pinout, SIHF9Z34STRL-GE3 application, or SIHF9Z34STRL-GE3 equivalent, key selection criteria include its -60 V blocking capability, low gate charge (34 nC), fast switching (18 ns turn-on delay), rugged body diode (100–200 ns t_rr), and surface-mount D2PAK thermal performance (R_thJC = 1.7 °C/W).

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for low R_DS(on)/area and fast switching. Its P-channel architecture enables high-side configuration without level-shifting circuitry, and its fully avalanche-rated design supports unclamped inductive energy absorption up to 370 mJ per pulse.

The D2PAK package provides low thermal resistance (1.7 °C/W junction-to-case) and high power dissipation (88 W at T_C = 25 °C), making it suitable for thermally constrained PCB layouts where copper area is limited. Gate drive requirements are compatible with standard -10 V logic-level sources, with Q_g = 34 nC and Q_gd/Q_gs ratio of ~1.6 indicating moderate Miller effect control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum reverse-blocking voltage before breakdown; defines use in ≤60 V bus systems.
R_DS(on) @ V_GS = -10 V	0.14 Ω - Conduction loss of 45 mW at 18 A; enables <1 W total I²R loss in high-current paths.
Q_g	34 nC - Total gate charge determines driver strength requirement; ~1.7 mA average current needed for 20 ns switching.
t_d(on)	18 ns - Turn-on delay time under standard test conditions; supports >1 MHz switching in hard-switched topologies.
E_AS	370 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without snubbers.
T_J max	175 °C - Maximum operating junction temperature; supports extended thermal margin in sealed enclosures or high ambient environments.
I_D continuous @ T_C = 25 °C	-18 A - Continuous current capability with heatsink; derates linearly to -13 A at 100 °C case temperature.

Pinout & Package

D2PAK (TO-263) package: surface-mount, single-ended power package with exposed drain tab for thermal conduction and mechanical anchoring. Dimensions per JEDEC TO-263AB outline; recommended minimum pad layout provided in Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Power output / heat sink interface	Electrically connected to internal die drain; must be soldered to large copper pour for thermal management and EMI control.
Source	Reference node for gate drive and current return	Connected to system ground or negative rail; defines V_GS reference; carries full load current.
Gate	Control input	High-impedance MOS control terminal; requires <100 nA leakage current; sensitive to ESD and ringing; needs local RC damping if driven by long traces.

Key Features

Feature	Design Value
Fully avalanche rated	370 mJ single-pulse E_AS ensures reliable operation during inductive turn-off without external protection components.
175 °C maximum junction temperature	Enables deployment in automotive engine compartments, industrial motor drives, and sealed power supplies without derating penalties.
Low R_DS(on) × Q_g figure-of-merit	0.14 Ω × 34 nC = 4.76 Ω·nC - balances conduction and switching losses for high-efficiency SMPS and motor control.
Rugged body diode	t_rr = 100–200 ns, Q_rr = 280–520 nC - supports synchronous rectification and freewheeling in buck converters and H-bridges.
RoHS-compliant, halogen-free	Meets IPC-1752A material declarations; GE3 suffix indicates lead-free and halogen-free construction per Vishay Doc. 99912.

Applications

DC-DC Synchronous Rectifier	High-Side Load Switch
Use Scenario: Secondary-side rectification in isolated 48 V input DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: P-channel MOSFET used as active rectifier replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: 0.14 Ω R_DS(on) cuts conduction loss by >60% vs. 0.5 V Schottky at 15 A, enabling >95% converter efficiency at full load.	Use Scenario: Controlled power-up sequencing for FPGA or ASIC core rails in industrial PLCs. IC Role / Device Role / Timing Role: High-side switch isolating downstream circuitry from main supply until enable signal is asserted. Use Value: -60 V V_DS rating and 175 °C operation ensure reliability during hot-swap events and overvoltage transients on 24–48 V rails.
Motor Drive Half-Bridge	Reverse Polarity Protection
Use Scenario: Upper switch in 24 V brushed DC motor H-bridge for robotic actuators. IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side switch; driven directly from microcontroller GPIO. Use Value: No level shifter required due to P-channel topology; 18 A continuous rating supports peak motor currents up to 72 A (pulsed).	Use Scenario: Input protection for battery-powered medical devices accepting 12–36 V DC inputs. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive input rail to block reverse-connected batteries or adapters. Use Value: Low 0.14 Ω R_DS(on) limits voltage drop to <2.5 mV/A, preserving >99% input voltage under full load while eliminating diode heat.

DC-DC Synchronous Rectifier

High-Side Load Switch

Use Scenario: Secondary-side rectification in isolated 48 V input DC-DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: P-channel MOSFET used as active rectifier replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: 0.14 Ω R_DS(on) cuts conduction loss by >60% vs. 0.5 V Schottky at 15 A, enabling >95% converter efficiency at full load.

Use Scenario: Controlled power-up sequencing for FPGA or ASIC core rails in industrial PLCs.

IC Role / Device Role / Timing Role: High-side switch isolating downstream circuitry from main supply until enable signal is asserted.

Use Value: -60 V V_DS rating and 175 °C operation ensure reliability during hot-swap events and overvoltage transients on 24–48 V rails.

Motor Drive Half-Bridge

Reverse Polarity Protection

Use Scenario: Upper switch in 24 V brushed DC motor H-bridge for robotic actuators.

IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side switch; driven directly from microcontroller GPIO.

Use Value: No level shifter required due to P-channel topology; 18 A continuous rating supports peak motor currents up to 72 A (pulsed).

Use Scenario: Input protection for battery-powered medical devices accepting 12–36 V DC inputs.

IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive input rail to block reverse-connected batteries or adapters.

Use Value: Low 0.14 Ω R_DS(on) limits voltage drop to <2.5 mV/A, preserving >99% input voltage under full load while eliminating diode heat.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34SPbF	Same silicon die and electrical specs; Pb-containing terminations (non-RoHS); D2PAK package identical.	Not suitable for RoHS-compliant designs; requires exemption documentation for EU/China markets.	Select only if legacy compliance or cost-driven non-RoHS production is mandated.
SiHF9Z34STRR-GE3	Identical specifications and RoHS/halogen-free status; differs only in tape-and-reel orientation (RR = reversed reel direction vs. TR = standard).	No functional or layout impact; reel direction affects pick-and-place machine setup only.	Choose based on SMT line feeder compatibility; electrically interchangeable with SIHF9Z34STRL-GE3.

Compared with IRF9Z34SPbF, SIHF9Z34STRL-GE3 offers RoHS/halogen-free compliance without trade-offs in performance or thermal behavior; compared with SiHF9Z34STRR-GE3, it shares identical electrical and mechanical characteristics but uses standard tape orientation for broader SMT equipment compatibility.

Availability

SIHF9Z34STRL-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and industrial power distribution systems requiring stable component supply, long-term lifecycle support, and verified thermal performance in surface-mount high-power applications.

Supply support for SIHF9Z34STRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHF9Z34STRL-GE3 belongs to Vishay's third-generation power MOSFET product line, engineered for ultra-low on-resistance and fast switching in high-current, high-temperature power conversion systems.

FAQ

What is the maximum continuous drain current rating for SIHF9Z34STRL-GE3 at 100 °C case temperature?

The SIHF9Z34STRL-GE3 supports -13 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and ensures safe operation within the 175 °C maximum junction temperature limit. At T_C = 25 °C, the rating is -18 A.

Does SIHF9Z34STRL-GE3 require a gate driver IC, or can it be driven directly from a microcontroller?

SIHF9Z34STRL-GE3 can be driven directly from a microcontroller GPIO if the MCU supports -10 V gate drive and delivers sufficient peak current (≥100 mA) to charge its 34 nC gate capacitance within required switching times. Most 3.3 V or 5 V MCUs lack negative output capability, so a simple inverting level-shifter or dedicated P-channel gate driver is typically used with SIHF9Z34STRL-GE3.

What is the thermal resistance from junction to case (R_thJC) for SIHF9Z34STRL-GE3, and how does it affect heatsink selection?

The SIHF9Z34STRL-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 1.7 °C/W. This value enables precise heatsink sizing: for example, to maintain T_J ≤ 125 °C at 88 W dissipation and T_C = 25 °C, the required heatsink-to-ambient resistance must be ≤ (125 − 25)/88 ≈ 1.14 °C/W, assuming negligible interface resistance.

Is SIHF9Z34STRL-GE3 suitable for avalanche energy handling in unclamped inductive switching?

Yes - SIHF9Z34STRL-GE3 is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 370 mJ and repetitive avalanche energy (E_AR) of 8.8 mJ. These ratings are validated per test condition V_DD = -25 V, I_AS = -18 A, confirming robustness in relay driving, solenoid control, and other unclamped inductive loads without external snubbers.

How does the body diode performance of SIHF9Z34STRL-GE3 compare to discrete Schottky diodes in synchronous rectification?

The SIHF9Z34STRL-GE3 body diode has t_rr = 100–200 ns and Q_rr = 280–520 nC, which is slower and higher-charge than most Schottky diodes but enables synchronous rectification with lower conduction loss than Schottky alternatives at high currents. Its V_SD = -6.3 V at -18 A is not forward-biased in normal operation; instead, the MOSFET channel conducts with 0.14 Ω R_DS(on), yielding far lower loss than any practical Schottky at >5 A.

SIHF9Z34STRL-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHF9Z34STRL-GE3 FAQ

1.How can I place an order for SIHF9Z34STRL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHF9Z34STRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHF9Z34STRL-GE3 reliable?

The price and inventory of SIHF9Z34STRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHF9Z34STRL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHF9Z34STRL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHF9Z34STRL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHF9Z34STRL-GE3?

SIHF9Z34STRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHF9Z34STRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHF9Z34STRL-GE3?

For technical support, including SIHF9Z34STRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHF9Z34STRL-GE3 requirements.

6.How does Aetrix verify that SIHF9Z34STRL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHF9Z34STRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHF9Z34STRL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHF9Z34STRL-GE3?

All SIHF9Z34STRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHF9Z34STRL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHF9Z34STRL-GE3 part is unused and in its original packaging.

Return procedure for SIHF9Z34STRL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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