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Vishay Siliconix SIHFB11N50A-E3
- Part No.:
- SIHFB11N50A-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SIHFB11N50A-E3.pdf
- Description:
- MOSFET N-CH 500V 11A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,291
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Product details
Overview
SIHFB11N50A-E3 from Vishay Siliconix is a 500 V, 11 A N-channel power MOSFET in TO-220AB package, featuring 0.52 Ω RDS(on) at VGS = 10 V, 52 nC total gate charge, and 275 mJ single-pulse avalanche energy-designed for high-voltage switching in offline SMPS half-bridge and PFC boost stages.
For engineers reviewing the SIHFB11N50A-E3 datasheet, SIHFB11N50A-E3 pinout, SIHFB11N50A-E3 application, or SIHFB11N50A-E3 equivalent, key selection criteria include its 500 V VDS, 0.52 Ω on-resistance, 170 W power dissipation at TC = 25 °C, robust 6.9 V/ns diode recovery dV/dt rating, and TO-220AB thermal performance with RthJC = 0.75 °C/W.
Technical Context
This device implements a planar silicon vertical DMOS structure optimized for high-voltage hard-switching applications. Its gate charge profile (Qg = 52 nC, Qgd = 18 nC) supports efficient drive with standard gate drivers, while fully characterized Ciss/Coss/Crss values (1423 pF / 208 pF / 8.1 pF at VDS = 25 V) enable accurate snubber and layout design.
The integrated body diode delivers 11 A continuous source-drain current with 1.5 V forward voltage and 510–770 ns reverse recovery time, enabling reliable operation in freewheeling and synchronous rectification roles within bridge topologies where unclamped inductive switching occurs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands full mains-derived DC bus voltages up to 400 V with margin for transients in offline converters. |
| RDS(on) | 0.52 Ω @ VGS = 10 V - Enables low conduction loss at 11 A continuous drain current, supporting <1.5 W I²R loss at rated load. |
| Qg | 52 nC - Requires ~0.52 µC gate drive per switching cycle at 10 kHz; compatible with common 1-A peak gate drivers. |
| EAS | 275 mJ - Sustains unclamped inductive energy during fault conditions without failure, critical for PFC and forward converter reliability. |
| TJ Range | −55 °C to +150 °C - Supports industrial and telecom power supply operation across extended ambient and self-heating conditions. |
| RthJC | 0.75 °C/W - Enables 170 W power dissipation with ≤128 °C junction rise above heatsink at TC = 25 °C. |
Pinout & Package
SIHFB11N50A-E3 is housed in a TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The package provides 62 °C/W maximum junction-to-ambient thermal resistance under free-air conditions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures turn-on stability across temperature and process variation. |
| D (Drain) | Main current output terminal | Internally connected to metal tab; requires electrical isolation when mounted to heatsink unless system ground reference permits direct connection. |
| S (Source) | Reference and return path | Serves as local ground reference for gate drive; must be routed with low-inductance path to minimize switching noise and dV/dt coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | 52 nC total / 18 nC Miller charge - Reduces switching losses and improves controllability during hard commutation in bridge legs. |
| Fully characterized avalanche capability | 275 mJ EAS, 11 A IAR - Eliminates need for external clamping in many flyback and forward converter designs. |
| Enhanced dV/dt ruggedness | 6.9 V/ns peak diode recovery dV/dt - Prevents false turn-on during high-speed switching transitions in high-side configurations. |
| Thermally optimized TO-220AB | RthJC = 0.75 °C/W - Delivers 170 W power handling with minimal heatsink mass, reducing system size and cost. |
Applications
| Server PSU Primary Switch | PFC Boost Switch |
|---|---|
|
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge topology, conducting 11 A RMS with 500 V blocking capability. Use Value: 0.52 Ω RDS(on) minimizes conduction loss at full load; 275 mJ EAS withstands transient overloads without derating. |
Use Scenario: Active Power Factor Correction stage in industrial AC-DC front-end converting 230 VAC to 400 VDC. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz. Use Value: 6.9 V/ns dV/dt rating prevents spurious turn-on during fast voltage transitions; low Qgd enables clean zero-voltage switching (ZVS) assist. |
| UPS Inverter Stage | Industrial Motor Drive Half-Bridge |
|
Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from battery-backed DC bus. IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter leg, handling bidirectional current with body diode conduction. Use Value: 1.5 V VSD and 510–770 ns trr reduce freewheeling losses and EMI generation during dead-time commutation. |
Use Scenario: 3-phase inverter driving 1–3 kW induction motor in HVAC or pump control systems. IC Role / Device Role / Timing Role: Upper-leg switch in two-transistor forward or half-bridge configuration, subjected to repetitive avalanche stress. Use Value: 17 mJ EAR and 11 A IAR support safe operation under short-circuit and regenerative braking conditions without external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP11NM50N | RDS(on) = 0.55 Ω, Qg = 42 nC, EAS = 220 mJ, TO-220FP package (lower power dissipation) | Lower thermal capability (PD = 110 W) limits use in high-duty-cycle or high-ambient environments | Preferable where gate drive current budget is constrained and avalanche energy margin is secondary |
| IXTH11N50L | RDS(on) = 0.58 Ω, Qg = 48 nC, EAS = 300 mJ, TO-247 package (superior thermal performance) | Higher RthJC (0.45 °C/W) enables >250 W operation but requires larger PCB footprint and heatsink | Preferred for high-reliability industrial inverters requiring extended avalanche endurance and lower junction temperature rise |
Compared with STP11NM50N and IXTH11N50L, SIHFB11N50A-E3 balances thermal capability (170 W), avalanche robustness (275 mJ), and TO-220AB form factor-making it optimal for space-constrained offline SMPS where moderate power density and proven ruggedness are prioritized over extreme thermal or energy margins.
Availability
SIHFB11N50A-E3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SIHFB11N50A-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SIHFB11N50A-E3 belongs to Vishay's high-voltage power MOSFET product line, engineered for demanding offline AC-DC conversion, PFC, and industrial motor control where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum continuous drain current for SIHFB11N50A-E3 at 100 °C case temperature?
The SIHFB11N50A-E3 supports 7.0 A continuous drain current at TC = 100 °C, reflecting linear derating from its 11 A rating at 25 °C. This value is defined in the Absolute Maximum Ratings table and verified under steady-state thermal conditions with proper heatsinking. Engineers must ensure junction temperature remains ≤150 °C using RthJC = 0.75 °C/W and actual heatsink thermal resistance. The SIHFB11N50A-E3 datasheet specifies this limit explicitly in Section 1.
Does SIHFB11N50A-E3 have a fully characterized body diode, and what are its key parameters?
Yes, the SIHFB11N50A-E3 features a fully characterized intrinsic body diode with VSD = 1.5 V at IS = 11 A and TJ = 25 °C, trr = 510–770 ns, and Qrr = 3.4–5.1 μC. These values are measured under controlled dI/dt = 100 A/μs conditions and documented in the "Drain-Source Body Diode Characteristics" section. The SIHFB11N50A-E3 body diode is suitable for freewheeling in hard-switched topologies but not optimized for synchronous rectification.
Is SIHFB11N50A-E3 RoHS-compliant and halogen-free?
Yes, SIHFB11N50A-E3 is both RoHS-compliant and halogen-free, as confirmed by Vishay's ordering nomenclature and material declarations. The "-E3" suffix denotes lead (Pb)-free and halogen-free construction per Vishay specification S21-0867-Rev. C. Full compliance documentation-including test reports and substance declarations-is available via Vishay's website using document number 91094. The SIHFB11N50A-E3 meets JEDEC JS709 and IEC 61249-2-21 standards.
What is the gate-source threshold voltage range for SIHFB11N50A-E3, and how does it affect drive design?
The SIHFB11N50A-E3 has a VGS(th) range of 2.0 V to 4.0 V at ID = 250 μA, ensuring reliable turn-on with standard 10 V gate drive while avoiding unintended conduction from noise. This range allows compatibility with TTL- and CMOS-level controllers but requires ≥6 V minimum drive for partial enhancement. The SIHFB11N50A-E3 gate leakage (±100 nA at ±30 V) further supports stable biasing in high-impedance drive circuits.
Can SIHFB11N50A-E3 be used in avalanche-mode operation, and what are the limits?
Yes, SIHFB11N50A-E3 is fully specified for repetitive and single-pulse avalanche operation: IAR = 11 A, EAR = 17 mJ (repetitive), and EAS = 275 mJ (single-pulse). These ratings assume TJ ≤ 150 °C and are validated per JEDEC JESD24-11. Operation beyond these limits risks parametric shift or failure. The SIHFB11N50A-E3 datasheet provides avalanche SOA curves in Figures 12c and 12d for design validation.
SIHFB11N50A-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 520mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 52 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1423 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SIHFB11N50A-E3 FAQ
1.How can I place an order for SIHFB11N50A-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFB11N50A-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFB11N50A-E3 reliable?
The price and inventory of SIHFB11N50A-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFB11N50A-E3 is usually 5 days.
3.What payment methods are accepted for SIHFB11N50A-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFB11N50A-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFB11N50A-E3?
SIHFB11N50A-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFB11N50A-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFB11N50A-E3?
For technical support, including SIHFB11N50A-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFB11N50A-E3 requirements.
6.How does Aetrix verify that SIHFB11N50A-E3 is sourced from the original manufacturer or authorized distributors?
All SIHFB11N50A-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFB11N50A-E3 meets industry standards.
7.What is the process for return or replacement of SIHFB11N50A-E3?
All SIHFB11N50A-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFB11N50A-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFB11N50A-E3 part is unused and in its original packaging.
Return procedure for SIHFB11N50A-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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