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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFB20N50K-E3

Name: SIHFB20N50K-E3
Brand: Vishay Siliconix
SKU: SIHFB20N50K-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFB20N50K-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SIHFB20N50K-E3.pdf

Description:: MOSFET N-CH 500V 20A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHFB20N50K-E3 from Vishay Siliconix is a 500 V, 20 A N-channel power MOSFET in TO-220AB package, featuring 0.21 Ω R_DS(on) at V_GS = 10 V, 110 nC total gate charge, and 330 mJ single-pulse avalanche energy-designed for hard-switched SMPS and UPS output stages.

For engineers reviewing the SIHFB20N50K-E3 datasheet, SIHFB20N50K-E3 pinout, SIHFB20N50K-E3 application, or SIHFB20N50K-E3 equivalent, key selection criteria include its 500 V blocking capability, low Q_g/Q_gd ratio for fast switching control, rugged dV/dt rating (10 V/ns), and validated unclamped inductive switching performance under 20 A I_AS.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage, medium-current switching with enhanced avalanche robustness. Its gate threshold voltage (3.0–5.0 V) ensures compatibility with standard 10 V gate drivers while maintaining noise immunity.

Dynamic parameters-including C_iss = 2870 pF, C_oss = 320 pF, and C_rss = 34 pF at V_DS = 25 V-are fully characterized to support accurate snubber design and EMI prediction in 100–500 kHz SMPS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus and 380 V AC input SMPS without derating
R_DS(on)	0.21 Ω max at V_GS = 10 V, I_D = 12 A - enables <1.0 W conduction loss at 20 A RMS in continuous conduction mode
Q_g	110 nC max - determines gate drive power requirement (~1.1 mW per MHz at 10 V swing) and influences switching speed control
E_AS	330 mJ single-pulse - guarantees safe operation during transformer leakage energy discharge in flyback and forward converters
dV/dt rating	10 V/ns - ensures reliable commutation in high-dI/dt circuits without spurious turn-on, validated per JEDEC JESD47
T_J range	−55 °C to +150 °C - supports industrial and telecom power systems operating under extended thermal conditions

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical mounting configuration. Thermal resistance R_thJC = 0.45 °C/W enables 280 W dissipation at T_C = 25 °C with minimal heatsink interface resistance.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; low 0.3–2.9 Ω gate input resistance minimizes resonance risk with PCB trace inductance
D (Drain)	High-side power terminal	Internally connected to metal tab; requires electrical isolation when mounted to heatsink; rated for 500 V transient overvoltage
S (Source)	Power return and reference node	Serves as local ground reference for gate driver; body diode anode; must be routed with low-inductance path to minimize switching overshoot

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio (110/54 nC)	Enables precise Miller plateau control and reduces switching transition time uncertainty in ZVS/ZCS resonant designs
Fully characterized C_oss vs. V_DS	Supports accurate calculation of turn-off energy loss and snubber capacitor sizing across 1–400 V drain voltage range
Body diode t_rr = 520–780 ns	Minimizes reverse recovery loss in synchronous rectification and bidirectional DC-DC applications up to 200 kHz
100 % UIS tested	Each unit validated for unclamped inductive switching at I_AS = 20 A, ensuring production-line robustness against load dump transients

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 3.3 kW modular server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch handling 20 A peak primary current; synchronized to controller's 100 kHz PWM signal with 50 ns dead-time margin. Use Value: 0.21 Ω R_DS(on) limits conduction loss to 84 W at full load; 330 mJ E_AS absorbs clamp capacitor discharge energy without failure.	Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid outage, using full-bridge inverter stage. IC Role / Device Role / Timing Role: High-side bridge arm switch; driven by isolated gate driver with 10 V supply; switching at 16 kHz with soft-commutation assist. Use Value: 10 V/ns dV/dt rating prevents false triggering during bus transients; body diode Q_rr = 5.3–8.0 μC enables low-loss freewheeling during zero-voltage transitions.
Telecom Rectifier Module	EV Charger Auxiliary Power Supply
Use Scenario: 48 V telecom rectifier with PFC front-end and LLC resonant DC-DC stage powering base station RF amplifiers. IC Role / Device Role / Timing Role: LLC resonant switch operating in ZVS region; gate driven with 10 V square wave at 300 kHz. Use Value: Low C_rss = 34 pF minimizes capacitive feedthrough during high dV/dt transitions; 2870 pF C_iss sets practical gate drive strength requirement.	Use Scenario: 12 V auxiliary power supply inside 22 kW on-board EV charger, converting 400 V battery voltage to power MCU and gate drivers. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter; subjected to 600 V reflected transients during MOSFET turn-off. Use Value: 500 V V_DS rating provides 20 % margin above worst-case reflected voltage; 330 mJ E_AS withstands leakage inductance spikes without avalanche degradation.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW modular server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch handling 20 A peak primary current; synchronized to controller's 100 kHz PWM signal with 50 ns dead-time margin.

Use Value: 0.21 Ω R_DS(on) limits conduction loss to 84 W at full load; 330 mJ E_AS absorbs clamp capacitor discharge energy without failure.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output during grid outage, using full-bridge inverter stage.

IC Role / Device Role / Timing Role: High-side bridge arm switch; driven by isolated gate driver with 10 V supply; switching at 16 kHz with soft-commutation assist.

Use Value: 10 V/ns dV/dt rating prevents false triggering during bus transients; body diode Q_rr = 5.3–8.0 μC enables low-loss freewheeling during zero-voltage transitions.

Telecom Rectifier Module

EV Charger Auxiliary Power Supply

Use Scenario: 48 V telecom rectifier with PFC front-end and LLC resonant DC-DC stage powering base station RF amplifiers.

IC Role / Device Role / Timing Role: LLC resonant switch operating in ZVS region; gate driven with 10 V square wave at 300 kHz.

Use Value: Low C_rss = 34 pF minimizes capacitive feedthrough during high dV/dt transitions; 2870 pF C_iss sets practical gate drive strength requirement.

Use Scenario: 12 V auxiliary power supply inside 22 kW on-board EV charger, converting 400 V battery voltage to power MCU and gate drivers.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter; subjected to 600 V reflected transients during MOSFET turn-off.

Use Value: 500 V V_DS rating provides 20 % margin above worst-case reflected voltage; 330 mJ E_AS withstands leakage inductance spikes without avalanche degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50	R_DS(on) = 0.24 Ω (higher), Q_g = 95 nC (lower), TO-220FP package with insulated tab	Limited to lower-power SMPS (<2 kW) due to higher conduction loss; better suited for space-constrained layouts requiring footprint compatibility	Prefer SIHFB20N50K-E3 where avalanche energy margin and dV/dt immunity are critical; STP20NM50 fits where gate drive power is constrained
IXFH20N50P	R_DS(on) = 0.22 Ω, Q_g = 125 nC (higher), TO-247AC package with higher thermal mass	Better thermal performance (R_thJC = 0.35 °C/W) but larger footprint; higher Q_g increases driver complexity in high-frequency designs	Select SIHFB20N50K-E3 for cost-sensitive TO-220-based designs needing proven 330 mJ E_AS; choose IXFH20N50P only when junction temperature must stay below 125 °C at >25 A peak

Compared with STP20NM50 and IXFH20N50P, SIHFB20N50K-E3 delivers superior avalanche ruggedness (330 mJ vs. 220 mJ and 260 mJ) and tighter dV/dt immunity (10 V/ns vs. 8 V/ns and 9 V/ns), making it optimal for unclamped inductive loads and high-noise industrial environments.

Availability

SIHFB20N50K-E3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-frequency hard-switched converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SIHFB20N50K-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHFB20N50K-E3 belongs to Vishay's high-voltage TrenchFET® Gen IV family, engineered specifically for industrial-grade SMPS, UPS, and telecom rectifiers where avalanche endurance and dynamic ruggedness are non-negotiable.

FAQ

What is the maximum continuous drain current rating for SIHFB20N50K-E3 at 100 °C case temperature?

The SIHFB20N50K-E3 has a continuous drain current rating of 12 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. The 20 A rating applies only at T_C = 25 °C and must be adjusted using the 2.2 W/°C linear derating factor for elevated temperatures. SIHFB20N50K-E3 maintains stable R_DS(on) performance across this range due to its positive temperature coefficient.

Does SIHFB20N50K-E3 have a fully characterized body diode for synchronous rectification use?

Yes, SIHFB20N50K-E3 includes full characterization of its intrinsic body diode, including reverse recovery time (t_rr = 520–780 ns), reverse recovery charge (Q_rr = 5.3–8.0 μC), and forward voltage (V_SD = 1.5 V at I_S = 20 A). These parameters are measured under standardized conditions (T_J = 25 °C, dI/dt = 100 A/μs) and enable accurate loss modeling in LLC and phase-shifted full-bridge topologies. SIHFB20N50K-E3's diode performance is consistent across production lots per Vishay's 100 % UIS testing protocol.

Is SIHFB20N50K-E3 RoHS-compliant and lead-free?

Yes, SIHFB20N50K-E3 is RoHS-compliant and lead-free, as confirmed by Vishay's material categorization documentation (www.vishay.com/doc?99912) and ordering code suffix "-E3". It meets EU RoHS Directive 2011/65/EU and China RoHS II requirements, with homogeneous lead content below 0.1 wt%. The device uses matte tin-plated leads and Pb-free solder-compatible terminations, verified through XRF analysis and process qualification per J-STD-020.

What is the gate threshold voltage range for SIHFB20N50K-E3, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) for SIHFB20N50K-E3 is specified from 3.0 V to 5.0 V at I_D = 250 μA, indicating strong turn-on consistency across temperature and process variation. This range allows reliable enhancement-mode operation with standard 10 V gate drivers while providing noise margin against spurious turn-on. SIHFB20N50K-E3 achieves full enhancement (R_DS(on) ≤ 0.25 Ω) at V_GS = 10 V, eliminating need for specialized high-voltage gate biasing. Drive circuits should maintain ≥1.5 V overdrive to ensure robust conduction under worst-case V_GS tolerance.

Can SIHFB20N50K-E3 replace IRFB20N50KPbF in existing designs?

Yes, SIHFB20N50K-E3 is the RoHS-compliant, lead-free replacement for IRFB20N50KPbF, sharing identical electrical specifications, thermal performance, pinout, and TO-220AB mechanical dimensions. Both parts meet the same product summary (V_DS = 500 V, R_DS(on) = 0.21 Ω, Q_g = 110 nC) and absolute maximum ratings. No PCB layout or drive circuit changes are required; SIHFB20N50K-E3 maintains full functional and form-factor compatibility while meeting modern environmental compliance mandates. SIHFB20N50K-E3 is qualified per the same S22-0560 datasheet revision.

SIHFB20N50K-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 280W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SIHFB20N50K-E3 FAQ

1.How can I place an order for SIHFB20N50K-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFB20N50K-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFB20N50K-E3 reliable?

The price and inventory of SIHFB20N50K-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFB20N50K-E3 is usually 5 days.

3.What payment methods are accepted for SIHFB20N50K-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFB20N50K-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFB20N50K-E3?

SIHFB20N50K-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFB20N50K-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFB20N50K-E3?

For technical support, including SIHFB20N50K-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFB20N50K-E3 requirements.

6.How does Aetrix verify that SIHFB20N50K-E3 is sourced from the original manufacturer or authorized distributors?

All SIHFB20N50K-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFB20N50K-E3 meets industry standards.

7.What is the process for return or replacement of SIHFB20N50K-E3?

All SIHFB20N50K-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFB20N50K-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFB20N50K-E3 part is unused and in its original packaging.

Return procedure for SIHFB20N50K-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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