Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFBF30S-GE3

Name: SIHFBF30S-GE3
Brand: Vishay Siliconix
SKU: SIHFBF30S-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHFBF30S-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHFBF30S-GE3.pdf

Description:: MOSFET N-CHANNEL 900V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:921

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHFBF30S-GE3 from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating up to 3.6 A - designed for high-voltage flyback, AC-DC adapters, and offline SMPS primary-side switching.

For engineers reviewing the SIHFBF30S-GE3 datasheet, SIHFBF30S-GE3 pinout, SIHFBF30S-GE3 application, or SIHFBF30S-GE3 equivalent, key selection criteria include its 900 V V_DS, dV/dt robustness (1.5 V/ns), low thermal resistance (R_thJC = 1.0 °C/W), and RoHS-compliant lead-free/halogen-free construction per Vishay S21-0932-Rev. E.

Technical Context

This third-generation high-voltage MOSFET uses planar silicon technology optimized for rugged unclamped inductive switching, with dynamic dV/dt immunity enabling stable operation in noisy high-di/dt environments. Its body diode exhibits 430–650 ns reverse recovery time and 1.4–2.1 μC Q_rr, supporting moderate-frequency hard-switched topologies.

The device integrates a monolithic N-channel enhancement-mode structure with gate oxide engineered for ±20 V V_GS tolerance and 2.0–4.0 V threshold voltage. Thermal design leverages the D2PAK's low R_thJC (1.0 °C/W) and PCB-mount R_thJA of 40 °C/W, enabling 125 W P_D at T_C = 25 °C without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports 720 V DC bus designs with 25 % safety margin for surge transients in offline power supplies
R_DS(on)	3.7 Ω @ V_GS = 10 V - determines conduction loss in primary switch; enables <1.5 W I²R loss at 2.2 A RMS
Q_g	78 nC - defines gate drive energy requirement; requires ≥1.5 W driver capability at 100 kHz switching
E_AS	250 mJ - specifies single-pulse avalanche energy handling; protects against transformer leakage spike failures
dV/dt Rating	1.5 V/ns - ensures immunity to parasitic turn-on during high-speed voltage transitions in high-side configurations
T_J Range	−55 to +150 °C - supports industrial and extended-temperature operation without derating below −40 °C

Pinout & Package

D2PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin surface-mount outline per JEDEC TO-263AB, 14.61 mm × 10.16 mm footprint, 4.45 mm height, and integral thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; input capacitance C_iss = 1200 pF affects driver sizing
D	Drain	Main high-voltage current path; electrically and thermally connected to exposed backside metal tab
S	Source	Reference node for gate drive; internal source inductance L_S = 7.5 nH impacts di/dt-induced ringing during switching

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 3.6 A I_AR and 13 mJ E_AR without degradation - eliminates need for external snubbers in inductive load circuits
Dynamic dV/dt rating	1.5 V/ns immunity - prevents false turn-on in high-side half-bridge or resonant LLC primary switches
Low R_thJC	1.0 °C/W junction-to-case - enables direct heatsink mounting via drain tab for efficient thermal management
Fast switching	td(on) = 14 ns, tr = 25 ns, td(off) = 90 ns - reduces switching losses in 65–130 kHz SMPS designs
RoHS/halogen-free	Lead (Pb)-free and halogen-free construction per Vishay Doc. 99912 - meets IPC-J-STD-609A Class 1 requirements

Applications

AC-DC Adapter Primary Switch	Industrial Flyback Converter
Use Scenario: 36 W universal-input (90–264 VAC) adapter for medical peripherals operating at 65 kHz. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; synchronized to PWM controller timing. Use Value: 900 V V_DS withstands 380 VDC bulk voltage plus line surges; 3.7 Ω R_DS(on) limits conduction loss to <0.9 W at 1.8 A peak.	Use Scenario: 75 W isolated flyback supplying 24 V/3 A to PLC I/O modules in factory automation. IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM); handles 100% duty cycle during startup overload. Use Value: Repetitive avalanche rating absorbs leakage inductance spikes without clamping; 150 °C T_J rating sustains ambient >70 °C cabinet temperatures.
Offline LED Driver	High-Voltage DC-DC Converter
Use Scenario: 40 W constant-current LED driver for street lighting using quasi-resonant flyback topology. IC Role / Device Role / Timing Role: High-side switch modulating primary current; gate driven by QR controller with valley-switching detection. Use Value: 1.5 V/ns dV/dt rating prevents spurious turn-on during high dv/dt transitions at drain node; low Q_gd/Q_g ratio improves switching efficiency.	Use Scenario: 120 VDC input to 400 VDC boost converter for energy storage systems. IC Role / Device Role / Timing Role: Boost switch operating at 50 kHz with 40% duty cycle; handles 12 A peak inductor current. Use Value: 250 mJ single-pulse avalanche energy safely absorbs inductive kickback during fault conditions; D2PAK thermal pad lowers case temperature by >15 °C vs. TO-220.

AC-DC Adapter Primary Switch

Industrial Flyback Converter

Use Scenario: 36 W universal-input (90–264 VAC) adapter for medical peripherals operating at 65 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; synchronized to PWM controller timing.

Use Value: 900 V V_DS withstands 380 VDC bulk voltage plus line surges; 3.7 Ω R_DS(on) limits conduction loss to <0.9 W at 1.8 A peak.

Use Scenario: 75 W isolated flyback supplying 24 V/3 A to PLC I/O modules in factory automation.

IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM); handles 100% duty cycle during startup overload.

Use Value: Repetitive avalanche rating absorbs leakage inductance spikes without clamping; 150 °C T_J rating sustains ambient >70 °C cabinet temperatures.

Offline LED Driver

High-Voltage DC-DC Converter

Use Scenario: 40 W constant-current LED driver for street lighting using quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: High-side switch modulating primary current; gate driven by QR controller with valley-switching detection.

Use Value: 1.5 V/ns dV/dt rating prevents spurious turn-on during high dv/dt transitions at drain node; low Q_gd/Q_g ratio improves switching efficiency.

Use Scenario: 120 VDC input to 400 VDC boost converter for energy storage systems.

IC Role / Device Role / Timing Role: Boost switch operating at 50 kHz with 40% duty cycle; handles 12 A peak inductor current.

Use Value: 250 mJ single-pulse avalanche energy safely absorbs inductive kickback during fault conditions; D2PAK thermal pad lowers case temperature by >15 °C vs. TO-220.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW9NK90Z	900 V, 7.5 Ω R_DS(on), 30 nC Q_g, TO-247 package	Higher on-resistance increases conduction loss; larger TO-247 requires more PCB area and thermal interface material	Preferred where lower gate charge reduces driver complexity but higher R_DS(on) is acceptable for lower-power designs
IXTH3N90L	900 V, 5.5 Ω R_DS(on), 45 nC Q_g, TO-247 package	Lower Q_g eases gate drive design; lacks specified dV/dt rating and avalanche data in public datasheet	Consider when fast switching dominates over ruggedness; verify avalanche capability separately for reliability-critical use

Compared with STW9NK90Z and IXTH3N90L, SIHFBF30S-GE3 offers superior thermal performance (R_thJC = 1.0 °C/W vs. ~1.5 °C/W), confirmed dV/dt immunity, and documented repetitive avalanche behavior - making it optimal for compact, thermally constrained, and transient-heavy offline power stages.

Availability

SIHFBF30S-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback converters, and high-voltage DC-DC boost stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIHFBF30S-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The SIHFBF30S-GE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for demanding offline power conversion applications where avalanche robustness, dV/dt immunity, and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current for SIHFBF30S-GE3 at 100 °C case temperature?

The SIHFBF30S-GE3 supports 2.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when ambient or heatsink conditions raise case temperature above 25 °C. Designers should verify junction temperature using R_thJC = 1.0 °C/W and actual power dissipation to ensure T_J remains ≤150 °C.

Does SIHFBF30S-GE3 have a specified body diode reverse recovery charge (Q_rr)?

Yes, SIHFBF30S-GE3 specifies Q_rr = 1.4–2.1 μC under test conditions of T_J = 25 °C, I_F = 3.6 A, and dI/dt = 100 A/μs. This parameter is critical for estimating commutation losses in synchronous rectification or bidirectional topologies. The body diode's trr (430–650 ns) and Q_rr values are measured per standard JEDEC methods and published in the "Drain-Source Body Diode Characteristics" section of the datasheet.

Can SIHFBF30S-GE3 be used in parallel configurations?

Yes, SIHFBF30S-GE3 is explicitly designed for ease of paralleling, as noted in its Features list. Its positive temperature coefficient of R_DS(on) (confirmed by Fig. 4: Normalized On-Resistance vs. Temperature) promotes current sharing across multiple devices. To ensure stability, match gate drive loop inductance and use individual gate resistors; layout symmetry and thermal coupling between paralleled SIHFBF30S-GE3 units are essential for balanced current distribution.

What is the gate-source threshold voltage range for SIHFBF30S-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHFBF30S-GE3 is 2.0–4.0 V, measured at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity against spurious gate excursions. The typical value falls near 3.0 V, and designers must ensure gate drive exceeds 4.0 V to guarantee full enhancement across process and temperature extremes.

Is SIHFBF30S-GE3 suitable for use in automotive applications?

No, SIHFBF30S-GE3 is not qualified for automotive applications. Its datasheet specifies an operating junction temperature range of −55 to +150 °C but does not include AEC-Q101 stress testing, PPAP documentation, or automotive-specific failure-in-time (FIT) data. Vishay positions this part for commercial and industrial power supplies only; automotive-grade alternatives require explicit AEC-Q101 certification and qualification reports not provided for SIHFBF30S-GE3.

SIHFBF30S-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7Ohm @ 2.2A, 100V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHFBF30S-GE3 FAQ

1.How can I place an order for SIHFBF30S-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFBF30S-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFBF30S-GE3 reliable?

The price and inventory of SIHFBF30S-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFBF30S-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFBF30S-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFBF30S-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFBF30S-GE3?

SIHFBF30S-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFBF30S-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFBF30S-GE3?

For technical support, including SIHFBF30S-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFBF30S-GE3 requirements.

6.How does Aetrix verify that SIHFBF30S-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFBF30S-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFBF30S-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFBF30S-GE3?

All SIHFBF30S-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFBF30S-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFBF30S-GE3 part is unused and in its original packaging.

Return procedure for SIHFBF30S-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …