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Vishay Siliconix SIHFL9110TR-GE3
- Part No.:
- SIHFL9110TR-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
SIHFL9110TR-GE3.pdf
- Description:
- MOSFET P-CH 100V 1.1A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:964
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Product details
Overview
SIHFL9110TR-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in SOT-223 package, rated for -100 V drain-source voltage, 1.2 Ω RDS(on) at VGS = -10 V, 8.7 nC total gate charge, and -1.1 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for high-side load switching in industrial power supplies and DC-DC converters.
For engineers reviewing the SIHFL9110TR-GE3 datasheet, SIHFL9110TR-GE3 pinout, SIHFL9110TR-GE3 application, or SIHFL9110TR-GE3 equivalent, key selection criteria include its -100 V blocking capability, low gate charge for efficient gate drive, thermal performance on PCB mount (RthJA = 60 °C/W), and ruggedized avalanche rating for inductive load handling.
Technical Context
This device implements a third-generation trench-gate P-channel MOSFET architecture with optimized cell layout for reduced RDS(on) and improved dv/dt immunity. Its dynamic characteristics-8.7 nC Qg, 4.1 nC Qgd, and 27 ns rise time-are tuned for high-frequency switching up to several hundred kHz in non-synchronous buck or load-switch topologies.
The SOT-223 package integrates an enlarged drain tab for enhanced thermal conduction, enabling >1.25 W power dissipation on standard FR-4 PCBs. Its body diode exhibits 80–160 ns reverse recovery time and 0.15–0.30 μC Qrr, supporting moderate-speed freewheeling in unidirectional power paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - Supports high-side switching in 48 V and 60 V industrial bus systems without derating. |
| RDS(on) @ VGS = -10 V | 1.2 Ω max - Limits conduction loss to ≤1.6 W at -1.1 A, enabling compact thermal design. |
| Qg | 8.7 nC max - Reduces gate driver power requirement and enables use of low-current logic-level drivers. |
| ID (continuous, TC = 25 °C) | -1.1 A - Suitable for low-power load switching and always-on auxiliary rails. |
| EAS | 100 mJ - Withstands unclamped inductive energy in relay or solenoid drive circuits without external snubbers. |
| dv/dt rating | -5.5 V/ns - Resists false turn-on during high-noise transients in motor control or power tool applications. |
| TJ range | -55 to +150 °C - Qualified for extended temperature operation in automotive under-hood and industrial enclosures. |
Pinout & Package
SOT-223 package with exposed drain tab for thermal conduction; standardized JEDEC TO-261AA outline; lead (Pb)-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab/Drain) | Drain (D) | Primary high-current path and thermal interface; must be soldered to copper pour for thermal management. |
| Pin 2 (Source) | Source (S) | Reference node for gate drive; connects to system ground or positive rail in high-side configuration. |
| Pin 3 (Gate) | Gate (G) | Control input; requires negative VGS for turn-on; sensitive to ESD (±20 V absolute max). |
| Pin 4 (Source) | Source (S) | Second source connection for lower parasitic inductance; electrically tied to Pin 2 internally. |
Key Features
| Feature | Design Value |
|---|---|
| P-channel enhancement mode | Enables high-side switching without level-shifting circuitry; simplifies gate drive in 3.3 V/5 V logic-controlled loads. |
| Repetitive avalanche rated | Rated for 0.31 mJ EAR pulses, allowing reliable operation in inductive load switching without external clamping. |
| Dynamic dv/dt immunity | Specified -5.5 V/ns ensures stable operation during fast voltage transients in noisy industrial environments. |
| SOT-223 thermal design | 60 °C/W RthJA on 1"² FR-4 PCB enables >2 W dissipation without heatsink in space-constrained designs. |
| Low Qgd/Qg ratio | 4.1/8.7 ≈ 47% - Improves Miller immunity and reduces risk of shoot-through in half-bridge configurations. |
Applications
| Industrial Power Sequencing | Telecom DC-DC Auxiliary Rail |
|---|---|
Use Scenario: Controlled power-up of FPGA I/O banks or analog front-end subsystems requiring precise voltage ramp timing. IC Role / Device Role / Timing Role: High-side load switch providing enable-controlled power delivery with soft-start via gate RC network. Use Value: -100 V rating accommodates 48 V backplane inputs; 1.2 Ω RDS(on) limits dropout to <1.3 V at 1.1 A, preserving downstream voltage margins. |
Use Scenario: Standby power management for remote radio units (RRUs) where low quiescent current and robustness against voltage surges are critical. IC Role / Device Role / Timing Role: Always-on P-channel switch isolating backup 3.3 V supply from main converter during fault conditions. Use Value: -55 to +150 °C operating range ensures reliability in outdoor telecom cabinets; 100 mJ EAS withstands lightning-induced transients on power lines. |
| Automotive Body Control Module | Smart Home Actuator Driver |
Use Scenario: Driving window lift motors or seat position actuators using PWM-controlled high-side switching. IC Role / Device Role / Timing Role: Low-duty-cycle P-channel switch handling peak currents up to -8.8 A during motor stall events. Use Value: Repetitive avalanche rating eliminates need for external TVS; -1.1 A continuous rating matches typical actuator hold current requirements. |
Use Scenario: Controlling solenoid valves in HVAC dampers or smart lock mechanisms powered from 24 V DC wall adapters. IC Role / Device Role / Timing Role: Logic-level compatible high-side switch interfaced directly with microcontroller GPIO pins. Use Value: Gate threshold of -2.0 to -4.0 V allows direct drive from 3.3 V MCU outputs with margin; SOT-223 footprint minimizes PCB area in compact IoT modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-side load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFL9110TRPbF | Same die, alternate manufacturing location; identical electrical specs and thermal ratings; marking code "FF" confirmed. | No functional difference; qualified for same industrial and automotive applications per Vishay documentation. | Select IRFL9110TRPbF when dual-sourcing or lead-time flexibility is required; fully interchangeable in BOMs. |
| DMN3026LFG-7 | 30 V VDS, 26 mΩ RDS(on), SOT-23 package; higher current density but lower voltage rating and no avalanche rating. | Limited to ≤24 V systems; unsuitable for 48 V industrial or automotive applications requiring -100 V blocking. | Choose DMN3026LFG-7 only for low-voltage, high-current portable electronics where board space is critical and voltage stress is minimal. |
Compared with IRFL9110TRPbF, SIHFL9110TR-GE3 offers identical performance and sourcing flexibility; versus DMN3026LFG-7, it trades off RDS(on) for essential -100 V capability and rugged avalanche behavior-making it the only viable option for 48 V+ high-side switching with inductive loads.
Availability
SIHFL9110TR-GE3 is available at Aetrix Electronics and suitable for industrial power sequencing, telecom DC-DC auxiliary rails, and automotive body control modules requiring stable component supply, long-term lifecycle support, and traceable Pb-free/halogen-free compliance.
Supply support for SIHFL9110TR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial, automotive, and computing markets.
The SIHFL9110TR-GE3 belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered specifically for high-side load switching in space-constrained, thermally demanding applications where avalanche robustness and gate drive simplicity are critical.
FAQ
What is the maximum continuous drain current for SIHFL9110TR-GE3 at 100 °C case temperature?
The SIHFL9110TR-GE3 supports -0.69 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-223 package and must be applied when ambient or board temperatures exceed 25 °C. Designers should verify junction temperature using RthJC = 40 °C/W and actual power dissipation to ensure safe operation below 150 °C.
Does SIHFL9110TR-GE3 require a gate driver IC for microcontroller interfacing?
SIHFL9110TR-GE3 can be driven directly by 3.3 V or 5 V microcontroller GPIO pins when used in low-frequency on/off applications, due to its -2.0 to -4.0 V gate threshold voltage. However, for fast switching (>10 kHz) or high-efficiency operation, a dedicated gate driver is recommended to deliver the full -10 V gate drive needed to achieve 1.2 Ω RDS(on) and minimize switching losses.
Is SIHFL9110TR-GE3 suitable for avalanche energy handling in relay coil suppression?
Yes, SIHFL9110TR-GE3 is explicitly repetitive avalanche rated with 0.31 mJ EAR and single-pulse rated for 100 mJ EAS. When used to suppress relay coil flyback, it safely clamps inductive kickback without external components-provided peak current stays within -1.1 A and pulse width remains within thermal limits defined in Figure 11 of the datasheet.
What is the thermal resistance from junction to ambient for SIHFL9110TR-GE3 on a standard PCB?
The maximum junction-to-ambient thermal resistance (RthJA) for SIHFL9110TR-GE3 is 60 °C/W when mounted on a 1" square FR-4 PCB, per the Thermal Resistance Ratings table. This value assumes standard copper pour practices and defines the upper bound for thermal design; actual performance improves with larger copper areas or internal layers.
How does the body diode performance of SIHFL9110TR-GE3 compare to standard rectifiers?
The SIHFL9110TR-GE3 body diode has a forward voltage of -5.5 V at -1.1 A and reverse recovery time of 80–160 ns, making it unsuitable as a primary rectifier. Its diode is optimized for freewheeling in low-duty-cycle switching applications-not continuous conduction. For rectification, discrete Schottky or fast recovery diodes remain superior in VF and trr.
SIHFL9110TR-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta), 3.1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
SIHFL9110TR-GE3 FAQ
1.How can I place an order for SIHFL9110TR-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFL9110TR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFL9110TR-GE3 reliable?
The price and inventory of SIHFL9110TR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFL9110TR-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFL9110TR-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFL9110TR-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFL9110TR-GE3?
SIHFL9110TR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFL9110TR-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFL9110TR-GE3?
For technical support, including SIHFL9110TR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFL9110TR-GE3 requirements.
6.How does Aetrix verify that SIHFL9110TR-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFL9110TR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFL9110TR-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFL9110TR-GE3?
All SIHFL9110TR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFL9110TR-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFL9110TR-GE3 part is unused and in its original packaging.
Return procedure for SIHFL9110TR-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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