Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFPS38N60L-GE3

Name: SIHFPS38N60L-GE3
Brand: Vishay Siliconix
SKU: SIHFPS38N60L-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIHFPS38N60L-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: SIHFPS38N60L-GE3.pdf

Description:: POWER MOSFET SUPER-247, 150 M @

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,658

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIHFPS38N60L-GE3 from Vishay Siliconix is a 600 V, 38 A N-channel Power MOSFET in Super-247 (TO-274AA) package, featuring 0.12 Ω R_DS(on) at V_GS = 10 V, 320 nC total gate charge, and enhanced dV/dt ruggedness up to 19 V/ns - optimized for zero-voltage-switching (ZVS) SMPS in telecom and UPS systems.

For engineers reviewing the SIHFPS38N60L-GE3 datasheet, SIHFPS38N60L-GE3 pinout, SIHFPS38N60L-GE3 application, or SIHFPS38N60L-GE3 equivalent, key selection criteria include avalanche energy rating (680 mJ), superfast body diode recovery (170–250 ns at 25 °C), gate threshold voltage range (3.0–5.0 V), thermal resistance R_thJC = 0.22 °C/W, and lead-free/halogen-free compliance per ordering code -GE3.

Technical Context

This device employs a high-voltage trench-gate process enabling stable 600 V blocking with low on-resistance and fast switching. Its superfast intrinsic body diode supports ZVS operation without external diodes, while elevated V_GS(th) (3.0–5.0 V) improves noise immunity in noisy power-conversion environments.

The MOSFET delivers 540 W maximum power dissipation at T_C = 25 °C and sustains repetitive avalanche current of 38 A. Its C_{oss eff.} = 350 pF (voltage-related) and C_{oss eff.}(ER) = 260 pF (energy-related) enable predictable soft-switching behavior in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Enables use in 400 V DC bus systems with 50 % safety margin for transient overvoltage handling.
R_DS(on) @ V_GS = 10 V	0.12 Ω (max) - Delivers <1.1 W conduction loss at 38 A, critical for high-efficiency 1–3 kW SMPS designs.
Q_g	320 nC - Determines gate drive power requirement; necessitates ≥2 W driver capability for 100 kHz switching.
E_AS	680 mJ - Supports unclamped inductive switching events without failure, enabling robust hard-switched flyback or forward converters.
dV/dt Rating	19 V/ns - Ensures reliable operation under high dv/dt stress in phase-shifted full-bridge or LLC resonant converters.
T_J Range	–55 to +150 °C - Allows deployment in industrial and telecom power supplies with extended ambient temperature requirements.
R_thJC	0.22 °C/W - Enables direct heatsink mounting with minimal thermal interface resistance for high-power density layouts.

Pinout & Package

Package: Super-247 (TO-274AA), JEDEC-compliant high-voltage outline with isolated drain tab, tin-plated leads, and 0.22 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path and thermal interface	Electrically connected to case; requires insulated mounting or isolation pad when referenced to non-ground potentials.
Gate	Control terminal for channel modulation	High-impedance input requiring ≤±30 V drive; 3.0–5.0 V threshold enables compatibility with standard 10 V gate drivers.
Source	Reference node for gate drive and current return	Low-inductance connection essential for minimizing switching oscillation; ties directly to power ground in half-bridge configurations.

Key Features

Feature	Design Value
Superfast body diode	trr = 170–250 ns (25 °C), Qrr = 830–1240 nC - Eliminates need for parallel SiC/Schottky diodes in ZVS LLC and phase-shifted full-bridge converters.
Enhanced dV/dt ruggedness	19 V/ns rated - Prevents false turn-on during high-speed switching transitions in high-frequency resonant topologies.
Higher gate threshold voltage	V_GS(th) = 3.0–5.0 V - Reduces susceptibility to noise-induced shoot-through in multi-MOSFET bridge configurations.
Low effective output capacitance	C_{oss eff.} = 350 pF - Enables precise timing control in resonant tank circuits and reduces dead-time sensitivity.
Lead (Pb)-free & halogen-free	-GE3 suffix - Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 moisture sensitivity level.

Applications

Telecom Rectifiers	Uninterruptible Power Supplies (UPS)
Use Scenario: High-efficiency AC/DC front-end rectification in 48 V telecom systems with 3–5 kW output. IC Role / Device Role / Timing Role: Primary-side switching element in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: 680 mJ single-pulse avalanche energy ensures reliability during line surges; 0.12 Ω R_DS(on) minimizes conduction loss at full load.	Use Scenario: Bidirectional DC/AC inversion stage in online double-conversion UPS with battery backup. IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET hybrid inverter leg, handling 38 A continuous current. Use Value: 19 V/ns dV/dt rating prevents spurious turn-on during fast bus transients; TO-274AA package enables >500 W/in² power density.
Server PSU Units	Industrial Motor Drives
Use Scenario: Secondary-side synchronous rectification and primary-side ZVS switching in 1U server PSUs (80 PLUS Titanium). IC Role / Device Role / Timing Role: Main switch in LLC resonant converter, leveraging superfast body diode for zero-current turn-on. Use Value: trr = 170 ns and Qrr = 830 nC reduce reverse recovery losses by >40 % vs. standard MOSFETs, improving efficiency above 96 %.	Use Scenario: Inverter output stage in 3–7.5 kW HVAC and pump drives with field-oriented control. IC Role / Device Role / Timing Role: Low-side switching device in three-phase bridge, commutating inductive motor currents up to 38 A RMS. Use Value: R_thJC = 0.22 °C/W allows direct bolt-down heatsinking; 150 A pulsed ID rating accommodates motor startup surges.

Telecom Rectifiers

Uninterruptible Power Supplies (UPS)

Use Scenario: High-efficiency AC/DC front-end rectification in 48 V telecom systems with 3–5 kW output.

IC Role / Device Role / Timing Role: Primary-side switching element in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 680 mJ single-pulse avalanche energy ensures reliability during line surges; 0.12 Ω R_DS(on) minimizes conduction loss at full load.

Use Scenario: Bidirectional DC/AC inversion stage in online double-conversion UPS with battery backup.

IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET hybrid inverter leg, handling 38 A continuous current.

Use Value: 19 V/ns dV/dt rating prevents spurious turn-on during fast bus transients; TO-274AA package enables >500 W/in² power density.

Server PSU Units

Industrial Motor Drives

Use Scenario: Secondary-side synchronous rectification and primary-side ZVS switching in 1U server PSUs (80 PLUS Titanium).

IC Role / Device Role / Timing Role: Main switch in LLC resonant converter, leveraging superfast body diode for zero-current turn-on.

Use Value: trr = 170 ns and Qrr = 830 nC reduce reverse recovery losses by >40 % vs. standard MOSFETs, improving efficiency above 96 %.

Use Scenario: Inverter output stage in 3–7.5 kW HVAC and pump drives with field-oriented control.

IC Role / Device Role / Timing Role: Low-side switching device in three-phase bridge, commutating inductive motor currents up to 38 A RMS.

Use Value: R_thJC = 0.22 °C/W allows direct bolt-down heatsinking; 150 A pulsed ID rating accommodates motor startup surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N60M2	600 V, 38 A, R_DS(on) = 0.115 Ω, Q_g = 290 nC, TO-247 package, no specified dV/dt rating	Lacks documented dV/dt ruggedness and superfast body diode characterization; lower gate charge eases drive but reduces ZVS margin	Preferred where gate drive simplicity outweighs ZVS optimization; not recommended for high-dV/dt resonant topologies.
IXFH38N60P	600 V, 38 A, R_DS(on) = 0.13 Ω, Q_g = 340 nC, TO-247 package, 12 V gate threshold, no EAS spec	Higher V_GS(th) improves noise immunity but eliminates compatibility with 5 V logic-level drivers; no avalanche energy rating	Suitable for noise-sensitive industrial controls but unsuitable for unclamped inductive switching or ZVS designs requiring EAS margin.

Compared with STW38N60M2 and IXFH38N60P, SIHFPS38N60L-GE3 uniquely combines 19 V/ns dV/dt rating, 680 mJ EAS, and characterized superfast body diode - making it the only option among the three qualified for ZVS telecom SMPS and high-reliability UPS inverters.

Availability

SIHFPS38N60L-GE3 is available at Aetrix Electronics and suitable for telecom rectifiers, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant high-voltage switching performance.

Supply support for SIHFPS38N60L-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The SIHFPS38N60L-GE3 belongs to Vishay's Super-247 high-voltage MOSFET product line, engineered specifically for ZVS and high-reliability resonant power conversion in telecom, server, and industrial UPS applications.

FAQ

What is the maximum continuous drain current rating for SIHFPS38N60L-GE3 at 100 °C case temperature?

The SIHFPS38N60L-GE3 has a continuous drain current rating of 24 A at T_C = 100 °C, derated linearly from 38 A at 25 °C using a 4.3 W/°C factor. This reflects thermal limitations of the Super-247 package under sustained high-power operation, and must be validated against actual heatsink performance and ambient conditions in the final design.

Does SIHFPS38N60L-GE3 support zero-voltage switching (ZVS) operation?

Yes, SIHFPS38N60L-GE3 is explicitly designed for ZVS applications due to its superfast body diode (trr = 170–250 ns at 25 °C) and low Q_rr (830–1240 nC), which minimize reverse recovery losses and enable clean turn-on without external diodes in LLC and phase-shifted full-bridge converters.

What is the gate-source threshold voltage range for SIHFPS38N60L-GE3?

The gate-source threshold voltage (V_GS(th)) for SIHFPS38N60L-GE3 is specified from 3.0 V to 5.0 V at T_J = 25 °C and I_D = 250 μA. This higher minimum threshold improves noise immunity compared to standard MOSFETs and reduces risk of spurious turn-on in high-noise power-conversion environments.

Is SIHFPS38N60L-GE3 compliant with RoHS and halogen-free standards?

Yes, the -GE3 suffix confirms SIHFPS38N60L-GE3 is lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 requirements. The device uses tin-plated leads and complies with Vishay's material categorization standard documented at www.vishay.com/doc?99912.

What is the single-pulse avalanche energy rating for SIHFPS38N60L-GE3?

The SIHFPS38N60L-GE3 is rated for 680 mJ single-pulse avalanche energy (E_AS) under test conditions of T_J = 25 °C, L = 0.91 mH, R_g = 25 Ω, and I_AS = 38 A. This rating validates its ability to withstand unclamped inductive switching events common in flyback and forward converter designs.

SIHFPS38N60L-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 320 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7990 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 540W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

SIHFPS38N60L-GE3 FAQ

1.How can I place an order for SIHFPS38N60L-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFPS38N60L-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFPS38N60L-GE3 reliable?

The price and inventory of SIHFPS38N60L-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFPS38N60L-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFPS38N60L-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFPS38N60L-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFPS38N60L-GE3?

SIHFPS38N60L-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFPS38N60L-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFPS38N60L-GE3?

For technical support, including SIHFPS38N60L-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFPS38N60L-GE3 requirements.

6.How does Aetrix verify that SIHFPS38N60L-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFPS38N60L-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFPS38N60L-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFPS38N60L-GE3?

All SIHFPS38N60L-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFPS38N60L-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFPS38N60L-GE3 part is unused and in its original packaging.

Return procedure for SIHFPS38N60L-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …