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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFPS40N60K-GE3

Name: SIHFPS40N60K-GE3
Brand: Vishay Siliconix
SKU: SIHFPS40N60K-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFPS40N60K-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: SIHFPS40N60K-GE3.pdf

Description:: POWER MOSFET SUPER-247, 130 M @

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Product details

Overview

SIHFPS40N60K-GE3 from Vishay Siliconix is a 600 V, 40 A N-channel Power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.110 Ω at V_GS = 10 V, Q_g = 330 nC, and enhanced avalanche ruggedness. It serves as a hard-switching primary or PFC switch in high-efficiency SMPS and UPS systems operating up to 150 °C junction temperature.

For engineers reviewing the SIHFPS40N60K-GE3 datasheet, SIHFPS40N60K-GE3 pinout, SIHFPS40N60K-GE3 application, or SIHFPS40N60K-GE3 equivalent, key selection criteria include its 600 V blocking capability, low gate charge for simplified gate drive, robust dV/dt immunity (7.5 V/ns), and validated unclamped inductive switching performance up to 600 mJ.

Technical Context

This device uses planar high-voltage silicon technology optimized for fast, reliable hard switching in offline power converters. Its fully characterized C_iss (7970 pF), C_oss (750 pF), and C_rss (75 pF) enable accurate snubber and EMI design, while the body diode supports synchronous rectification with t_rr = 630–1090 ns across -55 to +125 °C.

The MOSFET delivers stable R_DS(on) over temperature (0.63 V/°C V_DS tempco) and supports repetitive avalanche operation at I_AR = 40 A, with thermal resistance R_thJC = 0.22 °C/W enabling high-power dissipation in compact heatsinked layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Enables direct use in 400 V DC bus applications with 50 % safety margin against transients.
R_DS(on)	0.110 Ω @ V_GS = 10 V - Delivers ≤ 12.7 W conduction loss at 38 A, critical for high-efficiency PFC stages.
Q_g	330 nC - Requires ≥ 1.5 A peak gate drive for <100 ns switching transitions with 4.3 Ω gate resistor.
E_AS	600 mJ - Supports single-pulse unclamped inductive energy handling without failure in flyback or LLC resonant designs.
dV/dt rating	7.5 V/ns - Ensures noise-immune operation during fast voltage transitions in high-frequency SMPS topologies.
t_r/t_f	110 ns / 60 ns - Enables >100 kHz switching with controlled EMI and minimal overlap loss in bridge configurations.
T_J range	-55 to +150 °C - Qualified for industrial and telecom power supplies requiring extended thermal operating envelope.

Pinout & Package

Package: Super-247 (TO-274AA), isolated drain tab, surface-mount compatible with standard TO-274 footprint and thermal pad soldering per JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path	Electrically connected to metal tab - must be thermally and electrically tied to heatsink/ground plane.
G (Gate)	Control input	High-impedance MOS gate requiring low-inductance routing and local 0.1 µF bypass near package.
S (Source)	Reference node for gate drive	Common return for load current and gate driver ground - critical for minimizing shoot-through risk.

Key Features

Feature	Design Value
Low Q_g / Q_gd ratio	330 nC / 150 nC = 2.2 - Reduces Miller-induced turn-on risk and improves controllability in high-dV/dt environments.
Enhanced body diode dV/dt capability	7.5 V/ns - Prevents false turn-on during reverse recovery, enabling reliable operation without external diode.
Characterized C_{oss eff.}	260 pF (0–480 V) - Enables precise soft-switching timing prediction in ZVS/ZCS resonant converters.
Repetitive avalanche rated	I_AR = 40 A, E_AR = 57 mJ - Allows robust operation under transient overloads without derating or external clamping.
Lead (Pb)-free & halogen-free	RoHS-compliant per Vishay Doc. 99912 - Meets IPC/JEDEC J-STD-609A Class 1 requirements for green manufacturing.

Applications

Industrial SMPS	Uninterruptible Power Supply
Use Scenario: Primary-side switch in 1–3 kW offline flyback or forward converters with universal AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding. Use Value: 600 V rating and 600 mJ E_AS withstand capability eliminate need for external RCD clamp in cost-sensitive designs.	Use Scenario: Bidirectional DC-link switch in double-conversion UPS inverters with battery backup. IC Role / Device Role / Timing Role: Fast-turning main power switch managing AC-to-DC and DC-to-AC conversion paths. Use Value: Low Q_g enables efficient 50–100 kHz PWM control with minimal gate driver losses and thermal stress.
PFC Boost Converter	Motor Drive Inverter
Use Scenario: Active boost switch in continuous conduction mode (CCM) PFC front-end for server PSUs. IC Role / Device Role / Timing Role: High-current, high-voltage switch shaping input current waveform to match AC voltage. Use Value: 40 A continuous current and 0.110 Ω R_DS(on) minimize conduction loss at full load, improving efficiency to >98 %.	Use Scenario: Phase-leg switch in 3-phase inverter driving 5–10 HP industrial AC induction motors. IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive surge currents and motor back-EMF spikes. Use Value: Validated 160 A pulsed current and 150 °C T_J rating support high-torque startup and overload conditions without derating.

Industrial SMPS

Uninterruptible Power Supply

Use Scenario: Primary-side switch in 1–3 kW offline flyback or forward converters with universal AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding.

Use Value: 600 V rating and 600 mJ E_AS withstand capability eliminate need for external RCD clamp in cost-sensitive designs.

Use Scenario: Bidirectional DC-link switch in double-conversion UPS inverters with battery backup.

IC Role / Device Role / Timing Role: Fast-turning main power switch managing AC-to-DC and DC-to-AC conversion paths.

Use Value: Low Q_g enables efficient 50–100 kHz PWM control with minimal gate driver losses and thermal stress.

PFC Boost Converter

Motor Drive Inverter

Use Scenario: Active boost switch in continuous conduction mode (CCM) PFC front-end for server PSUs.

IC Role / Device Role / Timing Role: High-current, high-voltage switch shaping input current waveform to match AC voltage.

Use Value: 40 A continuous current and 0.110 Ω R_DS(on) minimize conduction loss at full load, improving efficiency to >98 %.

Use Scenario: Phase-leg switch in 3-phase inverter driving 5–10 HP industrial AC induction motors.

IC Role / Device Role / Timing Role: High-reliability power switch handling repetitive surge currents and motor back-EMF spikes.

Use Value: Validated 160 A pulsed current and 150 °C T_J rating support high-torque startup and overload conditions without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.085 Ω, Q_g = 220 nC, TO-247 package	Lower R_DS(on) but higher dV/dt sensitivity (5.0 V/ns); requires tighter gate layout control	Preferred when lower conduction loss dominates over gate drive simplicity and ruggedness.
IXFH40N60P	600 V, 40 A, R_DS(on) = 0.125 Ω, Q_g = 290 nC, TO-247 package	Higher R_DS(on), lower Q_g, no specified E_AS rating - limited avalanche capability	Selected where gate drive power is constrained and avalanche stress is not expected in final system.

Compared with STW48N60M2 and IXFH40N60P, the SIHFPS40N60K-GE3 offers superior dV/dt immunity and documented 600 mJ single-pulse avalanche energy - making it the preferred choice for unclamped inductive loads and noisy industrial environments where reliability under transient stress is non-negotiable.

Availability

SIHFPS40N60K-GE3 is available at Aetrix Electronics and suitable for industrial SMPS, uninterruptible power supply, and motor drive applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHFPS40N60K-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The SIHFPS40N60K-GE3 belongs to Vishay's Super-247 high-voltage MOSFET family, engineered for rugged, high-efficiency switching in industrial and telecom power systems where avalanche endurance and thermal stability are critical.

FAQ

What is the maximum continuous drain current for SIHFPS40N60K-GE3 at 100 °C case temperature?

The SIHFPS40N60K-GE3 supports 24 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Super-247 package and ensures safe operation within the 150 °C maximum junction temperature. The SIHFPS40N60K-GE3 maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does SIHFPS40N60K-GE3 have a fully characterized body diode, and what are its key recovery parameters?

Yes, the SIHFPS40N60K-GE3 features a fully characterized intrinsic body diode with t_rr = 630–950 ns (T_J = 25 °C) and Q_rr = 14–20 μC. These values are measured under standardized conditions (I_F = 38 A, dI/dt = 100 A/μs) and support design of snubbers and EMI filters. The SIHFPS40N60K-GE3 also specifies peak diode recovery dV/dt = 7.5 V/ns, confirming robust commutation behavior.

What is the gate threshold voltage range for SIHFPS40N60K-GE3, and how does it vary with temperature?

The SIHFPS40N60K-GE3 has a gate-source threshold voltage V_GS(th) of 3.0–5.0 V at T_J = 25 °C, with a typical value of ~4.0 V. As shown in Figure 12d, V_GS(th) decreases linearly with rising junction temperature - approximately 4.5 V at -55 °C, 4.0 V at 25 °C, and 3.2 V at 150 °C - enabling predictable turn-on behavior across the full operating range of the SIHFPS40N60K-GE3.

Is SIHFPS40N60K-GE3 suitable for zero-voltage switching (ZVS) topologies, and which capacitance parameters support that use?

Yes, the SIHFPS40N60K-GE3 is suitable for ZVS applications due to its fully characterized C_iss = 7970 pF, C_oss = 750 pF, and C_rss = 75 pF at V_DS = 25 V, plus C_{oss eff.} = 260 pF over 0–480 V. These values allow accurate resonant tank design and predictability of turn-on timing. The SIHFPS40N60K-GE3's low C_rss/C_iss ratio further minimizes voltage-dependent gate drive coupling during ZVS transitions.

What thermal resistance values are specified for SIHFPS40N60K-GE3, and how do they impact heatsink design?

The SIHFPS40N60K-GE3 specifies R_thJC = 0.22 °C/W (max) from junction to case and R_thCS = 0.24 °C/W (typ) from case to heatsink on a greased flat surface. With a maximum P_D = 570 W at T_C = 25 °C, these values indicate that a 0.5 °C/W heatsink can sustain ~300 W at T_C = 85 °C. The SIHFPS40N60K-GE3's low R_thJC enables compact thermal solutions in space-constrained industrial power modules.

SIHFPS40N60K-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7970 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 570W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

SIHFPS40N60K-GE3 FAQ

1.How can I place an order for SIHFPS40N60K-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFPS40N60K-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFPS40N60K-GE3 reliable?

The price and inventory of SIHFPS40N60K-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFPS40N60K-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFPS40N60K-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFPS40N60K-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFPS40N60K-GE3?

SIHFPS40N60K-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFPS40N60K-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFPS40N60K-GE3?

For technical support, including SIHFPS40N60K-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFPS40N60K-GE3 requirements.

6.How does Aetrix verify that SIHFPS40N60K-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFPS40N60K-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFPS40N60K-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFPS40N60K-GE3?

All SIHFPS40N60K-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFPS40N60K-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFPS40N60K-GE3 part is unused and in its original packaging.

Return procedure for SIHFPS40N60K-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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