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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFPS43N50K-GE3

Name: SIHFPS43N50K-GE3
Brand: Vishay Siliconix
SKU: SIHFPS43N50K-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFPS43N50K-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: SIHFPS43N50K-GE3.pdf

Description:: MOSFET N-CH 500V SUPER-247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHFPS43N50K-GE3 from Vishay Siliconix is a 500 V, 47 A N-channel enhancement-mode power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.078 Ω at V_GS = 10 V, Q_g = 350 nC, and 910 mJ single-pulse avalanche energy - designed for high-voltage, high-current hard-switched SMPS and UPS output stages.

For engineers reviewing the SIHFPS43N50K-GE3 datasheet, SIHFPS43N50K-GE3 pinout, SIHFPS43N50K-GE3 application, or SIHFPS43N50K-GE3 equivalent, key selection criteria include its 500 V V_DS, 0.23 °C/W R_thJC, 9.0 V/ns peak diode recovery dV/dt rating, and validated unclamped inductive switching capability up to 47 A.

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage ruggedness and low gate charge. Its dynamic parameters - C_iss = 8310 pF, C_oss = 960 pF, and C_rss = 120 pF at V_DS = 25 V - support stable operation in resonant and phase-shifted full-bridge topologies.

The integral body diode delivers t_rr = 620–940 ns and Q_rr = 14–21 μC at I_F = 47 A, enabling reliable freewheeling in synchronous rectification and active clamp circuits without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % voltage margin for transient spikes
R_DS(on)	0.078 Ω @ V_GS = 10 V - enables ≤ 12.5 W conduction loss at 40 A continuous drain current
Q_g	350 nC - requires ≥ 2 W gate driver average power at 100 kHz switching with 15 V drive
E_AS	910 mJ - withstands single-pulse inductive energy up to 0.82 mH × (47 A)²/2 without failure
R_thJC	0.23 °C/W - allows 540 W dissipation with ≤ 124 °C junction rise above 25 °C case temperature
dV/dt (diode)	9.0 V/ns - sustains fast voltage transients during body diode commutation without false turn-on
I_D (T_C = 100 °C)	29 A - defines maximum continuous current under forced-air-cooled heatsink conditions

Pinout & Package

Package: Super-247 (TO-274AA), isolated tab, lead (Pb)-free and halogen-free per JEDEC outline.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, electrically connected to package metal tab	Must be mounted to heatsink with thermal interface; serves as high-side switching node in TO-274AA layout
Source	Reference terminal for gate drive and current sensing	Low-inductance connection required to minimize V_GS noise during switching transitions
Gate	Control input for channel conduction	High-impedance node requiring <100 nA leakage control; sensitive to ESD and Miller-induced dv/dt coupling

Key Features

Feature	Design Value
Low Q_g / Q_gd ratio	350 nC total / 180 nC Miller charge → improves switching efficiency and reduces gate drive complexity
Characterized avalanche capability	910 mJ single-pulse E_AS with validated test circuit → eliminates need for external clamping in flyback/LLC primary switches
Enhanced dV/dt ruggedness	9.0 V/ns peak diode recovery dV/dt → prevents spurious turn-on during high-speed body diode reverse recovery
Thermally optimized package	0.23 °C/W R_thJC + isolated tab → enables direct mounting to heatsink without insulator, reducing thermal resistance by ~0.15 °C/W vs. insulated mounting
Full capacitance characterization	C_iss, C_oss, C_rss measured across 1–400 V V_DS range → supports accurate snubber and gate drive design for ZVS/ZCS topologies

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in phase-shifted full-bridge topology handling 47 A peak primary current. Use Value: 0.078 Ω R_DS(on) minimizes conduction loss at high load; 910 mJ E_AS ensures reliability during output short-circuit events.	Use Scenario: 5 kVA online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter bridge, switching at 8–16 kHz. Use Value: 500 V rating provides margin over 400 V bus; 9.0 V/ns dV/dt rating prevents false triggering during rapid bus polarity reversal.
EV Onboard Charger PFC Stage	High-Frequency Induction Heater
Use Scenario: Two-stage 6.6 kW OBC with boost PFC front-end operating at 65–135 kHz. IC Role / Device Role / Timing Role: Boost switch subjected to repetitive unclamped inductive stress during line-cycle zero-crossings. Use Value: Validated 47 A I_AR and 54 mJ E_AR enable robust operation without additional avalanche protection circuitry.	Use Scenario: 20 kW resonant induction heater using asymmetrical half-bridge topology at 50–100 kHz. IC Role / Device Role / Timing Role: Low-side switching element handling high di/dt currents and reverse recovery stress. Use Value: Body diode t_rr = 620–940 ns and Q_rr = 14–21 μC reduce switching losses and EMI generation during zero-voltage switching transitions.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in phase-shifted full-bridge topology handling 47 A peak primary current.

Use Value: 0.078 Ω R_DS(on) minimizes conduction loss at high load; 910 mJ E_AS ensures reliability during output short-circuit events.

Use Scenario: 5 kVA online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter bridge, switching at 8–16 kHz.

Use Value: 500 V rating provides margin over 400 V bus; 9.0 V/ns dV/dt rating prevents false triggering during rapid bus polarity reversal.

EV Onboard Charger PFC Stage

High-Frequency Induction Heater

Use Scenario: Two-stage 6.6 kW OBC with boost PFC front-end operating at 65–135 kHz.

IC Role / Device Role / Timing Role: Boost switch subjected to repetitive unclamped inductive stress during line-cycle zero-crossings.

Use Value: Validated 47 A I_AR and 54 mJ E_AR enable robust operation without additional avalanche protection circuitry.

Use Scenario: 20 kW resonant induction heater using asymmetrical half-bridge topology at 50–100 kHz.

IC Role / Device Role / Timing Role: Low-side switching element handling high di/dt currents and reverse recovery stress.

Use Value: Body diode t_rr = 620–940 ns and Q_rr = 14–21 μC reduce switching losses and EMI generation during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, 48 A I_D, R_DS(on) = 0.065 Ω, Q_g = 120 nC, TO-247 package	Lower gate charge but higher V_DS rating; not rated for 500 V bus with same margin	Preferable where lower switching loss dominates and 600 V rating aligns with system architecture
IXFH44N50P	500 V V_DS, 44 A I_D, R_DS(on) = 0.095 Ω, Q_g = 220 nC, TO-247 package	Higher R_DS(on) and lower I_D, but superior SOA and lower C_oss (720 pF)	Better suited for linear-mode or high-reliability industrial motor drives with extended safe operating area requirements

Compared with STW48N60M2 and IXFH44N50P, the SIHFPS43N50K-GE3 offers the highest single-pulse avalanche energy (910 mJ) and lowest thermal resistance (0.23 °C/W), making it optimal for high-stress, high-power-density SMPS where ruggedness and thermal performance are prioritized over minimal gate charge.

Availability

SIHFPS43N50K-GE3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-frequency industrial inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHFPS43N50K-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHFPS43N50K-GE3 belongs to Vishay's high-voltage Super-247 power MOSFET family, engineered for rugged, high-efficiency switching in telecom rectifiers, server PSUs, and industrial UPS systems where avalanche endurance and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current for SIHFPS43N50K-GE3 at 100 °C case temperature?

The SIHFPS43N50K-GE3 supports 29 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the Super-247 package and must be verified against actual heatsink performance and ambient conditions in the final design.

Does SIHFPS43N50K-GE3 have a fully characterized body diode, and what are its key recovery parameters?

Yes, the SIHFPS43N50K-GE3 features a fully characterized intrinsic body diode with t_rr = 620–940 ns, Q_rr = 14–21 μC, and peak recovery current I_RRM = 38 A at T_J = 25 °C, IF = 47 A, and dI/dt = 100 A/μs - data confirmed in the "Drain-source body diode characteristics" section of the datasheet.

What is the gate threshold voltage range for SIHFPS43N50K-GE3, and how does it affect drive circuit design?

The SIHFPS43N50K-GE3 has a V_GS(th) range of 3.0 V to 5.0 V at I_D = 250 μA. This wide threshold necessitates a minimum 10 V gate drive to ensure full enhancement and low R_DS(on); logic-level drivers are unsuitable without level-shifting.

Is SIHFPS43N50K-GE3 suitable for avalanche-rated operation, and what is its single-pulse energy rating?

Yes, the SIHFPS43N50K-GE3 is fully characterized for repetitive and single-pulse avalanche operation, with E_AS = 910 mJ (single-pulse) and I_AR = 47 A (repetitive), validated per the unclamped inductive test circuit in Figure 12a of the datasheet.

What thermal resistance values are specified for SIHFPS43N50K-GE3, and how do they impact heatsink selection?

The SIHFPS43N50K-GE3 specifies R_thJC = 0.23 °C/W (max) and R_thCS = 0.24 °C/W (typ), enabling precise junction temperature estimation. For example, at 540 W dissipation and T_C = 25 °C, T_J ≈ 150 °C - confirming operation at absolute maximum rating and guiding heatsink thermal resistance selection.

SIHFPS43N50K-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 350 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 8310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 540W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

SIHFPS43N50K-GE3 FAQ

1.How can I place an order for SIHFPS43N50K-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFPS43N50K-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFPS43N50K-GE3 reliable?

The price and inventory of SIHFPS43N50K-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFPS43N50K-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFPS43N50K-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFPS43N50K-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFPS43N50K-GE3?

SIHFPS43N50K-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFPS43N50K-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFPS43N50K-GE3?

For technical support, including SIHFPS43N50K-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFPS43N50K-GE3 requirements.

6.How does Aetrix verify that SIHFPS43N50K-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFPS43N50K-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFPS43N50K-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFPS43N50K-GE3?

All SIHFPS43N50K-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFPS43N50K-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFPS43N50K-GE3 part is unused and in its original packaging.

Return procedure for SIHFPS43N50K-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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