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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR1N60A-GE3

Name: SIHFR1N60A-GE3
Brand: Vishay Siliconix
SKU: SIHFR1N60A-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR1N60A-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR1N60A-GE3.pdf

Description:: MOSFET N-CH 600V 1.4A TO252AA

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Product details

Overview

SIHFR1N60A-GE3 from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS.

For engineers reviewing the SIHFR1N60A-GE3 datasheet, SIHFR1N60A-GE3 pinout, SIHFR1N60A-GE3 application, or SIHFR1N60A-GE3 equivalent, key selection considerations include its 600 V blocking capability, thermally robust DPAK footprint, body diode recovery time of 290–440 ns, and suitability for unclamped inductive switching in offline AC/DC converters.

Technical Context

This MOSFET employs planar VDMOS technology optimized for high-voltage ruggedness, with fully characterized C_iss (229 pF), C_oss (32.6 pF), and C_rss (2.4 pF) enabling accurate snubber and EMI design. Its gate threshold voltage range (2.0–4.0 V) ensures stable turn-on under varying drive conditions.

The device supports repetitive avalanche operation up to 1.4 A and 3.6 mJ, with peak diode recovery dV/dt rated at 3.8 V/ns - critical for reliable operation in discontinuous conduction mode (DCM) flyback topologies where secondary-side diode reverse recovery stresses the primary switch.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 V_AC) with sufficient margin for reflected transients in flyback designs
R_DS(on) max	7.0 Ω @ V_GS = 10 V - determines conduction loss at 1.4 A ID; enables <1 W dissipation in low-power SMPS
Q_g max	14 nC - defines gate driver current requirement; allows use of low-cost bipolar or CMOS drivers
E_AS	93 mJ - specifies single-pulse unclamped inductive switching capability without failure
T_J range	–55 °C to +150 °C - supports operation in sealed industrial or telecom power enclosures
R_thJC	3.5 °C/W - enables thermal design with minimal heatsinking when mounted on PCB copper pour
trr / Q_rr	290–440 ns / 510–760 µC - quantifies body diode recovery stress during hard-switching transitions

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal conduction; standard 3-pin surface-mount outline measuring 6.22 mm × 6.73 mm × 2.39 mm (L × W × H), compatible with IPC-7351B SO-252 footprint.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; 2.7 nC Q_gs enables fast turn-on with minimal Miller effect
D (Drain)	High-voltage output terminal	Connected to primary winding and bulk capacitor; electrically tied to thermal pad for heat sinking
S (Source)	Reference node / return path	Forms common connection with driver ground and current-sense resistor; body diode anode

Key Features

Feature	Design Value
Low Q_g	14 nC total gate charge reduces driver power loss and simplifies gate drive circuitry
Avalanche ruggedness	93 mJ single-pulse and 3.6 mJ repetitive avalanche energy enable robust operation in inductive load switching
Characterized capacitances	C_iss/C_oss/C_rss values provided across voltage range support precise snubber and EMI filter design
Body diode performance	1.6 V V_SD and 290–440 ns trr allow predictable recovery behavior in DCM flyback freewheeling
Thermal resistance	3.5 °C/W junction-to-case enables >36 W power dissipation with moderate heatsinking

Applications

Offline Flyback Converter	Power Factor Correction (PFC)
Use Scenario: Primary-side switch in 5–25 W AC/DC adapter operating in discontinuous conduction mode (DCM) with universal input. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from primary to secondary; turns off at zero current to minimize switching loss. Use Value: 600 V rating accommodates 400 V DC bus plus 100 V transient margin; 7.0 Ω R_DS(on) limits conduction loss to <1 W at full load.	Use Scenario: Boost switch in active PFC stage for LED drivers or industrial power supplies requiring >0.95 PF. IC Role / Device Role / Timing Role: Fast-switching boost transistor handling line-frequency ripple current and high-voltage stress during hold-up time. Use Value: 3.8 V/ns peak diode recovery dV/dt rating prevents false triggering during diode commutation; 1.4 A I_D supports typical 10–15 W PFC stages.
Uninterruptible Power Supply (UPS)	Industrial DC-DC Converter
Use Scenario: Inverter bridge switch in standby UPS systems converting 12–48 V battery to 120/230 V AC output. IC Role / Device Role / Timing Role: Low-duty-cycle high-voltage switch operating in square-wave or modified sine-wave topology. Use Value: –55 °C to +150 °C operating range ensures reliability in temperature-cycled battery cabinets; 93 mJ E_AS withstands load dump events.	Use Scenario: Primary-side switch in isolated 24 V to 5/12 V DC-DC converter for PLC I/O modules or sensor interfaces. IC Role / Device Role / Timing Role: Energy-transfer switch in forward or flyback topology with reinforced isolation requirements. Use Value: Fully characterized C_oss (32.6 pF) enables accurate calculation of capacitive turn-off loss; TO-252 package supports automated assembly and reflow compatibility.

Offline Flyback Converter

Power Factor Correction (PFC)

Use Scenario: Primary-side switch in 5–25 W AC/DC adapter operating in discontinuous conduction mode (DCM) with universal input.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from primary to secondary; turns off at zero current to minimize switching loss.

Use Value: 600 V rating accommodates 400 V DC bus plus 100 V transient margin; 7.0 Ω R_DS(on) limits conduction loss to <1 W at full load.

Use Scenario: Boost switch in active PFC stage for LED drivers or industrial power supplies requiring >0.95 PF.

IC Role / Device Role / Timing Role: Fast-switching boost transistor handling line-frequency ripple current and high-voltage stress during hold-up time.

Use Value: 3.8 V/ns peak diode recovery dV/dt rating prevents false triggering during diode commutation; 1.4 A I_D supports typical 10–15 W PFC stages.

Uninterruptible Power Supply (UPS)

Industrial DC-DC Converter

Use Scenario: Inverter bridge switch in standby UPS systems converting 12–48 V battery to 120/230 V AC output.

IC Role / Device Role / Timing Role: Low-duty-cycle high-voltage switch operating in square-wave or modified sine-wave topology.

Use Value: –55 °C to +150 °C operating range ensures reliability in temperature-cycled battery cabinets; 93 mJ E_AS withstands load dump events.

Use Scenario: Primary-side switch in isolated 24 V to 5/12 V DC-DC converter for PLC I/O modules or sensor interfaces.

IC Role / Device Role / Timing Role: Energy-transfer switch in forward or flyback topology with reinforced isolation requirements.

Use Value: Fully characterized C_oss (32.6 pF) enables accurate calculation of capacitive turn-off loss; TO-252 package supports automated assembly and reflow compatibility.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V, 1.05 A, R_DS(on) = 11.5 Ω, Q_g = 9.5 nC, TO-220 package	Lower current rating and higher R_DS(on); through-hole mounting only	Preferred where board space permits through-hole layout and lower cost outweighs SMT assembly benefits
FQP1N60CTF	600 V, 1.0 A, R_DS(on) = 11.5 Ω, Q_g = 10 nC, TO-220FP package	Same R_DS(on) and lower Q_g, but reduced current and thermal performance (R_thJC = 50 °C/W)	Selected when vertical mounting and simplified heatsink interface are prioritized over PCB area and thermal efficiency

Compared with SIHFR1N60A-GE3, STP1NK60Z offers lower gate charge but sacrifices 30 % current capability and requires through-hole assembly, while FQP1N60CTF trades off junction-to-case thermal resistance (50 °C/W vs. 3.5 °C/W) for a compact through-hole form factor - making SIHFR1N60A-GE3 optimal for thermally constrained, high-reliability SMT flyback designs.

Availability

SIHFR1N60A-GE3 is available at Aetrix Electronics and suitable for offline flyback converters, uninterruptible power supplies, and power factor correction circuits requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.

Supply support for SIHFR1N60A-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, precision, and high-voltage reliability.

The SIHFR1N60A-GE3 belongs to Vishay's high-voltage N-channel TrenchFET® family, engineered specifically for energy-efficient, compact AC/DC and DC/DC conversion in cost-sensitive industrial and consumer power supplies.

FAQ

What is the maximum continuous drain current rating for SIHFR1N60A-GE3 at 100 °C case temperature?

The SIHFR1N60A-GE3 has a maximum continuous drain current of 0.89 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be verified against actual PCB layout and airflow conditions in the final design.

Does SIHFR1N60A-GE3 support logic-level gate drive?

No, SIHFR1N60A-GE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. For reliable enhancement-mode operation with low on-resistance, a 10 V gate drive is required - not 3.3 V or 5 V logic levels.

What is the body diode reverse recovery time (trr) specification for SIHFR1N60A-GE3?

The SIHFR1N60A-GE3 body diode reverse recovery time is specified as 290–440 ns at T_J = 25 °C, I_F = 1.4 A, and dI/dt = 100 A/μs. This parameter is critical for estimating switching losses and voltage overshoot during hard-commutation in flyback and resonant topologies.

Can SIHFR1N60A-GE3 be used in avalanche mode for clamping applications?

Yes, SIHFR1N60A-GE3 is fully characterized for avalanche operation: it supports 93 mJ single-pulse avalanche energy and 3.6 mJ repetitive avalanche energy. However, avalanche use requires strict adherence to pulse width, duty cycle, and junction temperature limits defined in Figures 11–13 of the datasheet to ensure reliability.

What is the thermal resistance from junction to ambient (R_thJA) for SIHFR1N60A-GE3 on a standard PCB?

The SIHFR1N60A-GE3 has a maximum R_thJA of 110 °C/W when mounted on a 1" square FR-4 PCB, and 50 °C/W when using PCB mount (copper pour). These values assume specific test conditions - actual thermal performance depends on copper area, layer count, and airflow, and should be validated via thermal simulation or measurement.

SIHFR1N60A-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 229 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR1N60A-GE3 FAQ

1.How can I place an order for SIHFR1N60A-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR1N60A-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR1N60A-GE3 reliable?

The price and inventory of SIHFR1N60A-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR1N60A-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR1N60A-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR1N60A-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR1N60A-GE3?

SIHFR1N60A-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR1N60A-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR1N60A-GE3?

For technical support, including SIHFR1N60A-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR1N60A-GE3 requirements.

6.How does Aetrix verify that SIHFR1N60A-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR1N60A-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR1N60A-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR1N60A-GE3?

All SIHFR1N60A-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR1N60A-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR1N60A-GE3 part is unused and in its original packaging.

Return procedure for SIHFR1N60A-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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