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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR1N60ATR-GE3

Name: SIHFR1N60ATR-GE3
Brand: Vishay Siliconix
SKU: SIHFR1N60ATR-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR1N60ATR-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR1N60ATR-GE3.pdf

Description:: MOSFET N-CH 600V 1.4A DPAK

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Product details

Overview

SIHFR1N60ATR-GE3 from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - optimized for flyback SMPS primary-side switching.

For engineers reviewing the SIHFR1N60ATR-GE3 datasheet, SIHFR1N60ATR-GE3 pinout, SIHFR1N60ATR-GE3 application, or SIHFR1N60ATR-GE3 equivalent, key selection criteria include its 600 V blocking capability, low Q_g/Q_gd ratio for fast hard-switching, body diode recovery time under 440 ns, and thermal resistance of 3.5 °C/W junction-to-case - critical for compact, high-reliability offline converters.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized avalanche performance and dV/dt ruggedness up to 3.8 V/ns. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on margin across temperature, while C_iss/C_oss/C_rss values (229 pF / 32.6 pF / 2.4 pF) support predictable snubberless operation in discontinuous conduction mode (DCM) flyback topologies.

The integrated body diode exhibits 1.6 V forward drop at 1.4 A and 290–440 ns reverse recovery time, enabling self-commutated synchronous rectification in auxiliary windings. Safe operating area (SOA) is defined up to 10 ms pulses with R_DS(on)-limited conduction, supporting robust 5.6 A pulsed drain current handling without secondary breakdown.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in 400 V DC bus designs
R_DS(on) max	7.0 Ω @ V_GS = 10 V - enables <1 W conduction loss at 1.4 A RMS in low-power SMPS
Q_g max	14 nC - allows direct drive from low-current PWM controllers (e.g., UC384x) without gate driver buffering
E_AS	93 mJ - sustains unclamped inductive switching events in flyback transformers without failure
R_thJC	3.5 °C/W - delivers 36 W power dissipation capability with minimal heatsink in PCB-mount applications
t_rr	290–440 ns - minimizes diode recovery losses and EMI during zero-voltage switching transitions
I_D cont.	1.4 A @ T_C = 25 °C - defines maximum continuous current in thermally constrained DPAK layouts

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S), standard lead-free and halogen-free construction per JEDEC MO-238.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 2.7 nC Q_gs enables fast turn-on with low drive power
D (Drain)	High-voltage output terminal	Connected to transformer primary and bulk capacitor; electrically tied to exposed thermal pad
S (Source)	Reference node / return path	Provides ground reference for gate drive and current sensing; forms Kelvin source for accurate R_DS(on) measurement

Key Features

Feature	Design Value
Low gate charge (Q_g = 14 nC)	Reduces switching losses by >30% vs. comparable 600 V MOSFETs, enabling higher-frequency operation up to 150 kHz
Fully characterized avalanche rating	Guarantees 93 mJ single-pulse and 3.6 mJ repetitive avalanche energy - eliminates need for external clamping in cost-sensitive flyback designs
Improved dV/dt ruggedness (3.8 V/ns)	Prevents false turn-on during high dv/dt transients in transformer leakage spikes, enhancing system reliability
Characterized body diode recovery	Q_rr = 510–760 μC and t_rr = 290–440 ns enable predictable snubber design and reduced EMI in DCM operation
Thermally enhanced DPAK package	R_thJC = 3.5 °C/W allows full 36 W power dissipation with simple copper pour - no heatsink required below 15 W output

Applications

AC-DC Adapter	LED Driver
Use Scenario: 12 V/1 A isolated flyback converter for USB-C wall adapters with universal AC input. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling transformer energy transfer; operates in DCM with 65–100 kHz switching frequency. Use Value: 7.0 Ω R_DS(on) and 14 nC Q_g minimize conduction and switching losses, achieving >85% efficiency at full load without active cooling.	Use Scenario: Constant-voltage LED driver for commercial signage with 24 V output and surge immunity. IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology; handles 300 V DC link with 2× voltage margin. Use Value: 600 V V_DS rating and 93 mJ E_AS withstand line surges and lightning-induced transients without derating or protection circuits.
Industrial Power Supply	UPS Auxiliary Converter
Use Scenario: 24 V/0.5 A auxiliary supply in PLC I/O modules requiring long-term reliability and wide temperature operation. IC Role / Device Role / Timing Role: Low-duty-cycle primary switch in fixed-frequency flyback; operates continuously at T_J ≤ 125 °C. Use Value: R_thJC = 3.5 °C/W and -55 to +150 °C T_J range ensure stable performance across industrial ambient temperatures without thermal throttling.	Use Scenario: Battery-charging converter in line-interactive UPS systems with brownout ride-through capability. IC Role / Device Role / Timing Role: High-voltage switch in boost PFC front-end or isolated DC-DC stage; subjected to frequent start-stop cycling. Use Value: Repetitive avalanche rating (I_AR = 1.4 A, E_AR = 3.6 mJ) prevents cumulative degradation during repeated inrush and fault conditions.

AC-DC Adapter

LED Driver

Use Scenario: 12 V/1 A isolated flyback converter for USB-C wall adapters with universal AC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling transformer energy transfer; operates in DCM with 65–100 kHz switching frequency.

Use Value: 7.0 Ω R_DS(on) and 14 nC Q_g minimize conduction and switching losses, achieving >85% efficiency at full load without active cooling.

Use Scenario: Constant-voltage LED driver for commercial signage with 24 V output and surge immunity.

IC Role / Device Role / Timing Role: Primary-side switching element in quasi-resonant flyback topology; handles 300 V DC link with 2× voltage margin.

Use Value: 600 V V_DS rating and 93 mJ E_AS withstand line surges and lightning-induced transients without derating or protection circuits.

Industrial Power Supply

UPS Auxiliary Converter

Use Scenario: 24 V/0.5 A auxiliary supply in PLC I/O modules requiring long-term reliability and wide temperature operation.

IC Role / Device Role / Timing Role: Low-duty-cycle primary switch in fixed-frequency flyback; operates continuously at T_J ≤ 125 °C.

Use Value: R_thJC = 3.5 °C/W and -55 to +150 °C T_J range ensure stable performance across industrial ambient temperatures without thermal throttling.

Use Scenario: Battery-charging converter in line-interactive UPS systems with brownout ride-through capability.

IC Role / Device Role / Timing Role: High-voltage switch in boost PFC front-end or isolated DC-DC stage; subjected to frequent start-stop cycling.

Use Value: Repetitive avalanche rating (I_AR = 1.4 A, E_AR = 3.6 mJ) prevents cumulative degradation during repeated inrush and fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	Higher R_DS(on) (8.5 Ω), lower Q_g (11 nC), same DPAK package	Marginally lower conduction loss but reduced avalanche robustness (E_AS = 50 mJ)	Preferred where gate drive current is limited but avalanche stress is minimal
FQP1N60	Similar R_DS(on) (7.2 Ω), higher Q_g (20 nC), TO-220 package	Requires heatsink due to higher R_thJA; unsuitable for space-constrained SMT designs	Used when through-hole mounting and higher thermal mass are acceptable

Compared with STP1NK60Z and FQP1N60, SIHFR1N60ATR-GE3 offers superior avalanche energy handling (93 mJ vs. 50 mJ/-) and lower thermal resistance (3.5 °C/W vs. 4.0 °C/W/-), making it optimal for compact, high-reliability flyback converters subject to line transients and thermal cycling.

Availability

SIHFR1N60ATR-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial auxiliary power supplies requiring stable component supply and long-term manufacturability.

Supply support for SIHFR1N60ATR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SiHFx series targets cost-sensitive, high-volume offline power conversion - designed specifically for DCM flyback, PFC, and auxiliary supply topologies demanding ruggedness, consistency, and JEDEC-compliant packaging.

FAQ

What is the maximum continuous drain current rating for SIHFR1N60ATR-GE3 at 100 °C case temperature?

The SIHFR1N60ATR-GE3 has a maximum continuous drain current (I_D) of 0.89 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be verified against actual PCB layout and airflow conditions in the final design.

Does SIHFR1N60ATR-GE3 support logic-level gate drive?

No, SIHFR1N60ATR-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and it is characterized for full enhancement at V_GS = 10 V. For reliable switching, a minimum 10 V gate drive is required to achieve the specified 7.0 Ω R_DS(on); 5 V drive results in significantly higher on-resistance and increased conduction loss.

What is the recommended PCB pad layout for SIHFR1N60ATR-GE3 in DPAK (TO-252) package?

Vishay recommends a minimum copper pad of 10.67 mm × 5.69 mm (0.420" × 0.224") for the drain thermal pad of SIHFR1N60ATR-GE3, with solder mask defined (SMD) stencil openings and ≥4 thermal vias (0.3 mm diameter) connecting to inner-layer ground planes. This layout achieves the specified R_thJA = 50 °C/W in PCB-mount configuration per Application Note 826.

Can SIHFR1N60ATR-GE3 be used in avalanche mode for ZVS or snubberless operation?

Yes, SIHFR1N60ATR-GE3 is fully characterized for repetitive avalanche operation with I_AR = 1.4 A and E_AR = 3.6 mJ, and single-pulse avalanche energy of 93 mJ. Its datasheet includes validated test waveforms and SOA curves for unclamped inductive switching - enabling robust snubberless flyback and resonant converter designs when operated within the specified limits.

Is SIHFR1N60ATR-GE3 RoHS-compliant and halogen-free?

Yes, SIHFR1N60ATR-GE3 is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's Material Declaration per document #99912. The "-GE3" suffix explicitly denotes this environmental compliance, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements for unlimited floor life at ≤30 °C/60% RH.

SIHFR1N60ATR-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 229 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR1N60ATR-GE3 FAQ

1.How can I place an order for SIHFR1N60ATR-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR1N60ATR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR1N60ATR-GE3 reliable?

The price and inventory of SIHFR1N60ATR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR1N60ATR-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR1N60ATR-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR1N60ATR-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR1N60ATR-GE3?

SIHFR1N60ATR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR1N60ATR-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR1N60ATR-GE3?

For technical support, including SIHFR1N60ATR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR1N60ATR-GE3 requirements.

6.How does Aetrix verify that SIHFR1N60ATR-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR1N60ATR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR1N60ATR-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR1N60ATR-GE3?

All SIHFR1N60ATR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR1N60ATR-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR1N60ATR-GE3 part is unused and in its original packaging.

Return procedure for SIHFR1N60ATR-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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