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Vishay Siliconix SIHFR220TRL-GE3
- Part No.:
- SIHFR220TRL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR220TRL-GE3.pdf
- Description:
- MOSFET N-CH 200V 4.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,301
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Product details
Overview
SIHFR220TRL-GE3 from Vishay Siliconix is a 200 V, 4.8 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating - used in DC-DC converters, motor control stages, and industrial power switches.
For engineers reviewing the SIHFR220TRL-GE3 datasheet, SIHFR220TRL-GE3 pinout, SIHFR220TRL-GE3 application, or SIHFR220TRL-GE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and surface-mount layout guidance for reliable high-voltage switching design.
Technical Context
This third-generation TrenchFET® MOSFET employs optimized cell geometry and process tuning to achieve low conduction loss while maintaining rugged unclamped inductive switching capability. Its 161 mJ single-pulse avalanche energy and 4.8 A repetitive avalanche current support robust operation under transient overloads.
The device integrates a fast-recovery body diode with 150–300 ns reverse recovery time and 0.91–1.8 μC Qrr, enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Gate drive requirements are defined by 3.0 nC Qgs and 7.9 nC Qgd, supporting clean turn-on/turn-off with minimal Miller-induced oscillation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports input rails up to 170 V DC in offline or industrial SMPS designs |
| RDS(on) @ VGS = 10 V | 0.80 Ω - yields ≤11.5 W conduction loss at 3.4 A continuous drain current |
| ID (TC = 25 °C) | 4.8 A - maximum steady-state current with heatsink; derates linearly at 0.33 W/°C above 25 °C |
| Qg | 14 nC - determines gate driver current requirement (~1.4 A peak for 10 ns rise time) |
| EAS | 161 mJ - enables safe operation during 100 μs inductive turn-off transients without snubbers |
| RthJC | 3.0 °C/W - defines minimum thermal interface resistance needed to hold TJ < 150 °C at full power |
| VSD | 1.8 V - forward voltage of integrated body diode at 4.8 A, critical for freewheeling efficiency |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction; lead-free and halogen-free per JEDEC J-STD-020; recommended PCB pad layout per Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires ≥10 V to fully enhance; ±20 V absolute max rating |
| D | Drain | Main high-side power terminal; electrically connected to exposed thermal pad |
| S | Source | Power return and reference node; ties to gate driver ground for proper level shifting |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 4.8 A IAR and 4.2 mJ EAR - eliminates need for external clamping in inductive load switching |
| Dynamic dV/dt rated | 5.0 V/ns - prevents false turn-on during high-slew-rate voltage transients across drain-source |
| Fast switching | 7.2 ns td(on), 22 ns tr, 19 ns td(off), 13 ns tf - reduces switching losses in 100–500 kHz converters |
| Low Qgd/Qg ratio | 7.9/14 = 56% - improves controllability during Miller plateau and reduces risk of shoot-through |
| Surface-mount (DPAK) | Compatible with vapor-phase, infrared, and wave soldering - supports automated assembly and high-power density layouts |
Applications
| Industrial Motor Drives | DC-DC Converter Switches |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors. IC Role / Device Role / Timing Role: High-side or low-side switching element handling 4.8 A continuous current with 200 V bus tolerance. Use Value: Rugged avalanche rating absorbs back-EMF spikes during commutation; low RDS(on) minimizes I²R heating in enclosed enclosures. |
Use Scenario: Primary-side switch in non-isolated buck or buck-boost converters for industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Pulse-width modulated power switch operating at 200–300 kHz with 100 ns–1 μs dead time. Use Value: Fast turn-on/off times reduce transition losses; 5.0 V/ns dV/dt immunity prevents spurious conduction during high-frequency ringing. |
| LED Driver Circuits | Power Supply OR-ing |
Use Scenario: Constant-current switch in high-brightness LED string drivers for signage and machine vision lighting. IC Role / Device Role / Timing Role: PWM-controlled current regulator with duty cycle adjusted for brightness control. Use Value: Low gate charge enables precise dimming resolution; integrated body diode supports asynchronous flyback operation without external diode. |
Use Scenario: Reverse-polarity protection and redundancy switch in dual-input 12–24 V power supplies for embedded systems. IC Role / Device Role / Timing Role: Low-loss ideal diode replacement with source-drain conduction path controlled by gate bias. Use Value: 1.8 V VSD ensures minimal forward drop vs. Schottky; fast trr allows rapid switchover between inputs without output sag. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR220PbF | Same die, Pb-free but not halogen-free; identical RDS(on), Qg, and avalanche ratings | No RoHS exemption required; suitable where halogen content is unrestricted | Prefer SIHFR220TRL-GE3 for full environmental compliance; IRFR220PbF acceptable for legacy industrial PCBs |
| STP20NM20 | 200 V, 20 A, 0.13 Ω RDS(on); TO-220 package; higher current, lower RDS(on), larger footprint | Requires through-hole mounting and heatsink; better for >10 A continuous loads | Select STP20NM20 only when higher current or thermal mass is needed; SIHFR220TRL-GE3 preferred for space-constrained SMT designs |
Compared with IRFR220PbF, SIHFR220TRL-GE3 adds halogen-free compliance without performance trade-offs; versus STP20NM20, it trades current capacity and thermal mass for compact DPAK surface-mount integration and lower assembly cost.
Availability
SIHFR220TRL-GE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter switches, LED driver circuits, and power supply OR-ing requiring stable component supply and long-term manufacturing continuity.
Supply support for SIHFR220TRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive environments.
The SIHFR220TRL-GE3 belongs to Vishay's TrenchFET® Gen III family, engineered for high-voltage, medium-current switching in space-constrained surface-mount power systems where ruggedness and manufacturability are critical.
FAQ
What is the maximum continuous drain current for SIHFR220TRL-GE3 at 100 °C case temperature?
The SIHFR220TRL-GE3 supports 3.0 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This reflects linear derating from 4.8 A at 25 °C using the specified 0.33 W/°C factor. Designers must ensure thermal interface resistance and heatsinking maintain TC ≤ 100 °C under worst-case ambient and power dissipation conditions to sustain this current in SIHFR220TRL-GE3-based circuits.
Does SIHFR220TRL-GE3 have a qualified body diode for freewheeling applications?
Yes, SIHFR220TRL-GE3 includes an integral body diode characterized for 4.8 A continuous source-drain current and 19 A pulsed current. Its reverse recovery time (trr) is 150–300 ns at 25 °C with 100 A/μs dI/dt, and Qrr is 0.91–1.8 μC - making SIHFR220TRL-GE3 suitable for asynchronous flyback, buck converter freewheeling, and inductive load commutation where external diode omission is desired.
What is the gate threshold voltage range for SIHFR220TRL-GE3?
The gate-source threshold voltage (VGS(th)) for SIHFR220TRL-GE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range confirms logic-level compatibility with 3.3 V and 5 V microcontroller outputs, though full enhancement to 4.8 A requires VGS ≥ 10 V. The SIHFR220TRL-GE3 does not qualify as a true "logic-level" MOSFET for sub-5 V drive, but operates reliably with standard 10 V gate drivers.
Can SIHFR220TRL-GE3 be paralleled with identical units for higher current handling?
Yes, SIHFR220TRL-GE3 is explicitly designed for ease of paralleling, as noted in its Features section. Its positive RDS(on) temperature coefficient ensures current sharing stability across multiple devices. To achieve balanced operation, SIHFR220TRL-GE3 units require matched gate drive paths, symmetrical PCB layout, and shared thermal coupling - especially critical given its 3.0 °C/W junction-to-case thermal resistance.
What is the meaning of "-GE3" in SIHFR220TRL-GE3?
The "-GE3" suffix in SIHFR220TRL-GE3 denotes a lead-free and halogen-free construction compliant with JEDEC J-STD-020 moisture sensitivity level 1 and RoHS Directive 2011/65/EU. It also indicates packaging in tape-and-reel format ("TRL") and adherence to Vishay's green materials standard - distinct from earlier "PbF" (lead-free only) or "BE3" (alternate manufacturing location) variants. SIHFR220TRL-GE3 meets both environmental and assembly reliability requirements for modern industrial electronics.
SIHFR220TRL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR220TRL-GE3 FAQ
1.How can I place an order for SIHFR220TRL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR220TRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR220TRL-GE3 reliable?
The price and inventory of SIHFR220TRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR220TRL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR220TRL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR220TRL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR220TRL-GE3?
SIHFR220TRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR220TRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR220TRL-GE3?
For technical support, including SIHFR220TRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR220TRL-GE3 requirements.
6.How does Aetrix verify that SIHFR220TRL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR220TRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR220TRL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR220TRL-GE3?
All SIHFR220TRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR220TRL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR220TRL-GE3 part is unused and in its original packaging.
Return procedure for SIHFR220TRL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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