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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR320-GE3

Name: SIHFR320-GE3
Brand: Vishay Siliconix
SKU: SIHFR320-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR320-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR320-GE3.pdf

Description:: MOSFET N-CH 400V 3.1A DPAK

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Product details

Overview

SIHFR320-GE3 from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω R_DS(on) at V_GS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS primary-side switching, and industrial motor control.

For engineers reviewing the SIHFR320-GE3 datasheet, SIHFR320-GE3 pinout, SIHFR320-GE3 application, or SIHFR320-GE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and real-world mounting guidance for PCB layout and thermal management.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon process and packaging to achieve rugged unclamped inductive switching performance (E_AS = 160 mJ), fast dV/dt immunity (4.0 V/ns), and low gate charge for efficient hard-switching operation up to 200 kHz. Its 1.8 Ω on-resistance balances conduction loss and die size for cost-sensitive high-voltage applications.

The device integrates a robust intrinsic body diode with t_rr = 270–600 ns and Q_rr = 1.4–3.0 μC, enabling reliable freewheeling in flyback and resonant topologies. Thermal resistance R_thJC = 3.0 °C/W supports direct heatsink attachment via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Withstands full mains-referenced voltage spikes in 230 VAC offline designs without clamping.
R_DS(on)	1.8 Ω @ V_GS = 10 V - Enables <2.5 W conduction loss at 3.1 A continuous drain current under typical thermal conditions.
Q_g	20 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
E_AS	160 mJ - Supports single-pulse energy absorption during transformer reset or fault events without failure.
t_r/t_f	14 ns / 13 ns - Enables fast transition through Miller plateau, reducing switching losses in high-frequency SMPS.
R_thJC	3.0 °C/W - Allows direct thermal path to heatsink; junction-to-case temperature rise stays below 126 °C at 42 W dissipation.
I_D (T_C = 100 °C)	2.0 A - Specifies usable continuous current when case temperature reaches 100 °C, critical for sealed enclosure designs.

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; surface-mount compatible with vapor-phase, infrared, or wave soldering per JEDEC standards.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V enables compatibility with standard microcontroller GPIOs.
D (Drain)	High-side power switch node	Connected to exposed copper pad; carries full load current and must be routed over large copper area for thermal and EMI control.
S (Source)	Reference return path	Provides ground reference for gate drive; source inductance LS = 7.5 nH impacts switching speed and ringing in high-dI/dt circuits.

Key Features

Feature	Design Value
Dynamic dV/dt rating	4.0 V/ns - Prevents false turn-on during high-slew-rate transients in bridge or flyback configurations.
Repetitive avalanche rated	I_AR = 3.1 A, E_AR = 4.2 mJ - Sustains repeated inductive energy dump without parameter shift, enabling robust protection in unregulated systems.
Fast switching	t_d(on) = 10 ns, t_d(off) = 30 ns - Reduces overlap loss in hard-switched topologies; optimized for <200 kHz operation.
Low Q_gd/Q_gs ratio	11 nC / 3.3 nC ≈ 3.3 - Minimizes Miller effect, improving gate drive efficiency and noise immunity during switching transitions.
Surface-mount (DPAK)	Compatible with automated assembly; thermal pad enables >2.5 W dissipation on 1" FR-4 PCB without heatsink.

Applications

Offline AC-DC Adapters	Industrial Motor Drives
Use Scenario: Primary-side switch in 15–30 W universal-input flyback converters powering IoT gateways and smart home hubs. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from bulk capacitor to transformer primary; operates at 65–130 kHz. Use Value: 400 V V_DS and 160 mJ E_AS eliminate need for external snubbers in cost-sensitive adapters meeting IEC 61000-4-5 surge immunity.	Use Scenario: Half-bridge upper switch driving 24–48 V brushed DC motors in factory automation actuators and conveyor modules. IC Role / Device Role / Timing Role: High-side power switch modulated via PWM from motor controller IC; handles 3.1 A continuous load with 12 A pulsed capability. Use Value: Repetitive avalanche rating ensures survival during motor stall or rapid direction reversal without external protection circuitry.
DC-DC Boost Converters	LED Driver Power Stages
Use Scenario: Step-up switch in 12 V to 48 V telecom boost converters feeding PoE++ PSE controllers. IC Role / Device Role / Timing Role: Main power transistor conducting during duty cycle; subjected to 400 V transient stress during output short-circuit events. Use Value: 1.8 Ω R_DS(on) limits conduction loss to <1.8 W at 3.1 A, while 20 nC Q_g enables efficient gate drive with minimal driver IC overhead.	Use Scenario: Constant-current switch in outdoor LED streetlight drivers operating from rectified 230 VAC input. IC Role / Device Role / Timing Role: High-voltage buck or buck-boost switch regulating LED string current; endures line surges and lightning-induced transients. Use Value: 4.0 V/ns dV/dt immunity prevents spurious turn-on during EFT bursts, maintaining stable dimming and avoiding visible flicker.

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: Primary-side switch in 15–30 W universal-input flyback converters powering IoT gateways and smart home hubs.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer from bulk capacitor to transformer primary; operates at 65–130 kHz.

Use Value: 400 V V_DS and 160 mJ E_AS eliminate need for external snubbers in cost-sensitive adapters meeting IEC 61000-4-5 surge immunity.

Use Scenario: Half-bridge upper switch driving 24–48 V brushed DC motors in factory automation actuators and conveyor modules.

IC Role / Device Role / Timing Role: High-side power switch modulated via PWM from motor controller IC; handles 3.1 A continuous load with 12 A pulsed capability.

Use Value: Repetitive avalanche rating ensures survival during motor stall or rapid direction reversal without external protection circuitry.

DC-DC Boost Converters

LED Driver Power Stages

Use Scenario: Step-up switch in 12 V to 48 V telecom boost converters feeding PoE++ PSE controllers.

IC Role / Device Role / Timing Role: Main power transistor conducting during duty cycle; subjected to 400 V transient stress during output short-circuit events.

Use Value: 1.8 Ω R_DS(on) limits conduction loss to <1.8 W at 3.1 A, while 20 nC Q_g enables efficient gate drive with minimal driver IC overhead.

Use Scenario: Constant-current switch in outdoor LED streetlight drivers operating from rectified 230 VAC input.

IC Role / Device Role / Timing Role: High-voltage buck or buck-boost switch regulating LED string current; endures line surges and lightning-induced transients.

Use Value: 4.0 V/ns dV/dt immunity prevents spurious turn-on during EFT bursts, maintaining stable dimming and avoiding visible flicker.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR320PbF	Same silicon die, identical R_DS(on), Q_g, and avalanche ratings; Pb-free variant with legacy part marking.	No functional difference; RoHS-compliant but lacks GE3 suffix indicating Vishay's latest green packaging standard.	Select IRFR320PbF only if legacy BOM alignment or distributor stock availability requires non-GE3 marking.
STP3NK80ZFP	800 V V_DS, higher R_DS(on) (5.5 Ω), lower I_D (2.6 A); SuperMESH™ process, not avalanche-rated.	Higher voltage margin but reduced efficiency and no repetitive avalanche capability-requires external clamping in inductive loads.	Choose STP3NK80ZFP only when system-level overvoltage exceeds 400 V and avalanche robustness is handled externally.

Compared with IRFR320PbF, SIHFR320-GE3 offers identical electrical performance with enhanced green packaging compliance; versus STP3NK80ZFP, it trades voltage headroom for superior avalanche ruggedness, lower conduction loss, and proven reliability in unclamped inductive switching.

Availability

SIHFR320-GE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and DC-DC boost converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHFR320-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The SIHFR320-GE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered specifically for high-voltage, medium-current switching in cost-sensitive industrial and consumer power supplies where avalanche capability and surface-mount reliability are essential.

FAQ

What is the maximum continuous drain current for SIHFR320-GE3 at 100 °C case temperature?

The SIHFR320-GE3 supports 2.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be used for thermal design validation-not the 3.1 A rating at 25 °C. The linear derating factor is 0.33 W/°C above 25 °C case temperature.

Does SIHFR320-GE3 have a fully rated avalanche capability, and what are its limits?

Yes, SIHFR320-GE3 is repetitively avalanche rated with I_AR = 3.1 A and E_AR = 4.2 mJ per pulse, and single-pulse E_AS = 160 mJ. These values assume T_J ≤ 150 °C and are validated per test condition b (V_DD = 50 V, L = 29 mH, R_g = 25 Ω). Avalanche operation must remain within the Safe Operating Area curve and avoid exceeding maximum junction temperature.

What is the gate threshold voltage range for SIHFR320-GE3, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for SIHFR320-GE3 is 2.0–4.0 V at I_D = 250 μA. This range confirms logic-level compatibility-full enhancement occurs at 10 V, and the device can be driven directly by 3.3 V or 5 V microcontrollers with sufficient gate current. However, operation near the lower threshold limit increases R_DS(on) and switching time variability.

How does the body diode performance of SIHFR320-GE3 impact its use in synchronous rectification or freewheeling applications?

The SIHFR320-GE3 body diode has V_SD = 1.6 V at I_S = 3.1 A and T_J = 25 °C, with t_rr = 270–600 ns and Q_rr = 1.4–3.0 μC. While not optimized for synchronous rectification, it provides reliable freewheeling in flyback and buck converters. For high-efficiency synchronous designs, an external Schottky diode or dedicated SR controller is recommended due to Q_rr-induced switching loss.

What PCB layout considerations are critical for thermal and electrical performance of SIHFR320-GE3 in DPAK package?

For optimal performance, SIHFR320-GE3 requires a minimum 1" square copper pour (FR-4) connected to the exposed drain pad for thermal dissipation, achieving R_thJA ≈ 50 °C/W. Gate and source traces must be short and wide to minimize L_S = 7.5 nH and L_G, preventing oscillation. Recommended pad dimensions per Application Note 826 are 6.18 mm × 5.69 mm for the drain pad and 2.20 mm × 4.57 mm for source/gate lands.

SIHFR320-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR320-GE3 FAQ

1.How can I place an order for SIHFR320-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR320-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR320-GE3 reliable?

The price and inventory of SIHFR320-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR320-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR320-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR320-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR320-GE3?

SIHFR320-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR320-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR320-GE3?

For technical support, including SIHFR320-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR320-GE3 requirements.

6.How does Aetrix verify that SIHFR320-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR320-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR320-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR320-GE3?

All SIHFR320-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR320-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR320-GE3 part is unused and in its original packaging.

Return procedure for SIHFR320-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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