Vishay Siliconix SIHFR320TR-GE3
- Part No.:
- SIHFR320TR-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR320TR-GE3.pdf
- Description:
- MOSFET N-CHANNEL 400V
- Quantity:
- Payment:

- Shipping:

Inventory:598
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Product details
Overview
SIHFR320TR-GE3 from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and industrial motor control snubbers.
For engineers reviewing the SIHFR320TR-GE3 datasheet, SIHFR320TR-GE3 pinout, SIHFR320TR-GE3 application, or SIHFR320TR-GE3 equivalent, key selection criteria include its 400 V VDS, 1.8 Ω on-resistance, 20 nC Qg, 160 mJ single-pulse avalanche energy, and DPAK thermal performance with RthJC = 3.0 °C/W.
Technical Context
This third-generation silicon power MOSFET uses planar V-groove technology optimized for rugged unclamped inductive switching. Its dynamic dV/dt rating of 4.0 V/ns and body diode reverse recovery time of 270–600 ns support reliable operation in hard-switched flyback and resonant topologies.
The device integrates a fast-recovery intrinsic body diode (VSD = 1.6 V at 3.1 A) and is characterized for linear derating (0.33 W/°C) up to 150 °C junction temperature, enabling stable operation in compact PCB-mounted designs without heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 400 V - supports primary-side switching in 380 V DC bus and universal-input offline SMPS |
| RDS(on) | 1.8 Ω @ VGS = 10 V - enables low conduction loss in <5 W auxiliary supplies and bias rails |
| Qg | 20 nC - balances switching speed and gate drive loss in 50–500 kHz applications |
| EAS | 160 mJ - sustains unclamped inductive energy during startup/fault in relay drivers and solenoid controls |
| ID (TC = 25 °C) | 3.1 A - delivers full rated current with minimal derating when mounted on 1" FR-4 PCB |
| RthJC | 3.0 °C/W - allows direct thermal coupling to copper pour or heatsink for >30 W pulsed dissipation |
| trr | 270–600 ns - limits diode recovery loss in discontinuous conduction mode (DCM) flyback converters |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated assembly and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures robust turn-on margin |
| D (Drain) | High-side switch node | Exposed metal tab connects directly to PCB copper pour for thermal management and low-inductance return path |
| S (Source) | Power reference / return | Provides Kelvin sense point for accurate current monitoring; ties to ground plane with low-impedance trace |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 3.1 A IAR and 4.2 mJ EAR indefinitely under controlled pulse conditions-eliminates need for external clamping in inductive load switching |
| Dynamic dV/dt immunity | Rated 4.0 V/ns-prevents false turn-on in high dv/dt environments like half-bridge leg commutation |
| Fast switching | td(on) = 10 ns, tr = 14 ns, td(off) = 30 ns, tf = 13 ns-reduces transition losses in high-frequency SMPS |
| Surface-mount (DPAK) | Compatible with vapor-phase and IR reflow; footprint matches JEDEC TO-252 standard for drop-in replacement and layout reuse |
| Lead (Pb)-free and halogen-free | Meets RoHS 2011/65/EU and Vishay's material categorization per doc. 99912-qualified for automotive and industrial end equipment |
Applications
| AC-DC Auxiliary Power Supply | Industrial Relay Driver |
|---|---|
Use Scenario: Provides isolated 12 V/5 V bias supply for PWM controllers and gate drivers in offline SMPS. IC Role / Device Role / Timing Role: Primary-side high-side switch in DCM flyback topology operating at 65–130 kHz. Use Value: 1.8 Ω RDS(on) minimizes standby loss; 160 mJ EAS absorbs leakage inductance spikes during MOSFET turn-off. | Use Scenario: Drives 24 VDC industrial relays and solenoids in PLC output modules. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switching element with integrated freewheeling diode. Use Value: Repetitive avalanche rating (IAR = 3.1 A) eliminates external flyback diode; 400 V VDS accommodates 2× supply transients. |
| DC-DC Converter Snubber | High-Voltage LED Driver |
Use Scenario: Active clamp or passive snubber switch in 48–380 V input DC-DC converters. IC Role / Device Role / Timing Role: Fast-turning switch absorbing transformer leakage energy during reset phase. Use Value: 20 nC Qg enables precise timing control; 4.0 V/ns dV/dt rating prevents spurious triggering in noisy high-dv/dt nodes. | Use Scenario: Constant-current switch in series-string LED drivers for street lighting and signage. IC Role / Device Role / Timing Role: High-side current regulator controlling 100–200 V LED strings in buck or buck-boost topology. Use Value: 3.1 A continuous drain current supports >35 W string power; 150 °C TJ(max) ensures reliability in enclosed luminaires. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR320TRPbF-BE3 | Same die, identical RDS(on), Qg, and avalanche specs; Pb-free variant with BE3 suffix and different tape/reel packaging | No functional difference; compatible in all SIHFR320TR-GE3 designs requiring lead-free compliance | Select when sourcing from legacy IR brand channels or where BE3 packaging is specified in BOM |
| STP4NK40Z | 400 V, 3.5 A, RDS(on) = 1.7 Ω, Qg = 19 nC-but uses TO-220 package and lacks repetitive avalanche rating | Requires through-hole mounting and external avalanche protection; higher RthJA (62 °C/W) limits PCB-only thermal performance | Choose only if DPAK footprint is not required and discrete avalanche clamping is acceptable |
Compared with IRFR320TRPbF-BE3, SIHFR320TR-GE3 offers identical electrical performance with Vishay's updated material coding and GE3 tape/reel standard; versus STP4NK40Z, SIHFR320TR-GE3 provides superior surface-mount integration, lower thermal resistance, and built-in avalanche ruggedness-critical for space-constrained and high-reliability industrial systems.
Availability
SIHFR320TR-GE3 is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial relay drivers, and high-voltage LED drivers requiring stable component supply across extended production lifecycles.
Supply support for SIHFR320TR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SiHFx320 family delivers third-generation high-voltage power MOSFETs optimized for ruggedness, fast switching, and cost-effective surface-mount implementation in offline and intermediate-bus power conversion.
FAQ
What is the maximum continuous drain current for SIHFR320TR-GE3 at 100 °C case temperature?
The SIHFR320TR-GE3 supports 2.0 A continuous drain current at TC = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package mounted on standard FR-4 PCB; actual current capability may increase with enhanced copper pour or heatsinking. The SIHFR320TR-GE3 maintains safe operation up to 150 °C junction temperature.
Does SIHFR320TR-GE3 require a gate resistor for reliable switching?
Yes-SIHFR320TR-GE3 benefits from an external gate resistor (Rg) to control dI/dt and suppress ringing. Typical evaluation uses Rg = 18 Ω for switching tests (Fig. 10), and Rg = 25 Ω for avalanche testing. The SIHFR320TR-GE3 gate charge of 20 nC means Rg values between 10 Ω and 47 Ω balance speed and EMI in most 50–200 kHz applications.
Can SIHFR320TR-GE3 replace IRFR320 in existing designs?
Yes-SIHFR320TR-GE3 is a direct Vishay-branded replacement for IRFR320TRPbF-BE3 and IRFR320TRPbF, sharing identical die, pinout, RDS(on), Qg, and avalanche ratings. The SIHFR320TR-GE3 uses the same DPAK (TO-252) package and GE3 tape/reel standard, enabling drop-in substitution without layout or firmware changes.
What is the body diode forward voltage of SIHFR320TR-GE3 at 3.1 A and 25 °C?
The body diode forward voltage (VSD) of SIHFR320TR-GE3 is 1.6 V at IS = 3.1 A and TJ = 25 °C, as specified in the Drain-Source Body Diode Characteristics table. This value increases with temperature and current; at 125 °C, VSD rises to approximately 1.3 V due to negative temperature coefficient, supporting predictable freewheeling behavior in synchronous rectifier or bidirectional switch applications.
Is SIHFR320TR-GE3 suitable for use in automotive applications?
The SIHFR320TR-GE3 is not AEC-Q101 qualified and is not recommended for automotive safety-critical systems. However, it is widely used in non-safety automotive subsystems such as infotainment power supplies, body control module auxiliary rails, and HVAC fan drivers-provided system-level validation confirms thermal, EMI, and lifetime requirements. For SIHFR320TR-GE3 in automotive contexts, refer to Vishay's reliability data (doc. 91273) and consult application engineering support.
SIHFR320TR-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR320TR-GE3 FAQ
1.How can I place an order for SIHFR320TR-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR320TR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR320TR-GE3 reliable?
The price and inventory of SIHFR320TR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR320TR-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR320TR-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR320TR-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR320TR-GE3?
SIHFR320TR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR320TR-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR320TR-GE3?
For technical support, including SIHFR320TR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR320TR-GE3 requirements.
6.How does Aetrix verify that SIHFR320TR-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR320TR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR320TR-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR320TR-GE3?
All SIHFR320TR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR320TR-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR320TR-GE3 part is unused and in its original packaging.
Return procedure for SIHFR320TR-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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