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Vishay Siliconix SIHFR320TRL-GE3

Part No.:
SIHFR320TRL-GE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSIHFR320TRL-GE3.pdf
Description:
MOSFET N-CHANNEL 400V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,784

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Product details

Overview

SIHFR320TRL-GE3 from Vishay Siliconix is a 400 V, 3.1 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 1.8 Ω RDS(on) at VGS = 10 V, 20 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and offline switch-mode power supplies.

For engineers reviewing the SIHFR320TRL-GE3 datasheet, SIHFR320TRL-GE3 pinout, SIHFR320TRL-GE3 application, or SIHFR320TRL-GE3 equivalent, key selection criteria include its 400 V drain-source breakdown voltage, 1.8 Ω on-resistance, 20 nC gate charge, avalanche energy rating of 4.2 mJ, and DPAK thermal performance with RthJC = 3.0 °C/W.

Technical Context

This third-generation power MOSFET employs planar V-groove technology to achieve ruggedized unclamped inductive switching capability and fast switching with low gate charge. Its dynamic dV/dt rating of 4.0 V/ns supports reliable operation in high-di/dt environments without spurious turn-on.

The device integrates a robust body diode with 270–600 ns reverse recovery time and 1.4–3.0 μC Qrr, enabling use in freewheeling and synchronous rectification roles where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

ParameterValue and Actual Design Meaning
VDS400 V - supports primary-side switching in 380 V DC bus and universal-input offline SMPS
RDS(on)1.8 Ω @ VGS = 10 V - enables low conduction loss at 3.1 A continuous drain current
Qg20 nC - determines gate drive power requirement and switching speed in hard-switched topologies
EAR4.2 mJ - specifies maximum repetitive avalanche energy per pulse, critical for snubberless flyback or RCD clamp designs
RthJC3.0 °C/W - defines junction-to-case thermal resistance, enabling direct heatsink mounting for 42 W PD dissipation
ID (TC = 100 °C)2.0 A - derated continuous current limit when case temperature reaches 100 °C
VGS(th)2.0–4.0 V - threshold voltage range ensures reliable turn-on with standard 10 V gate drivers while avoiding false triggering

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-power density PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control terminalReceives 10 V logic-level signal to fully enhance channel; requires <20 nC charge for full turn-on
D (Drain)High-side power outputConnected to high-voltage rail (up to 400 V); electrically and thermally tied to exposed copper pad
S (Source)Power return / reference nodeServes as local ground reference for gate drive; carries full load current and body diode conduction

Key Features

FeatureDesign Value
Dynamic dV/dt rating4.0 V/ns - prevents parasitic turn-on during high-slew-rate voltage transients in flyback or resonant converters
Repetitive avalanche rated4.2 mJ per pulse - eliminates need for external clamping in inductive load switching applications
Fast switching10 ns turn-on delay + 14 ns rise time - reduces switching losses in 100–500 kHz SMPS designs
Surface-mount (DPAK)TO-252 outline with thermal pad - supports vapor-phase reflow and delivers 2.5 W power dissipation on FR-4 PCB
Body diode recovery270–600 ns trr, 1.4–3.0 μC Qrr - enables efficient freewheeling in discontinuous conduction mode (DCM) topologies

Applications

Offline AC-DC AdaptersIndustrial DC-DC Converters

Use Scenario: 12–24 V output, 30–60 W universal-input flyback converter for industrial control panels.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65 kHz with self-supplied bias winding.

Use Value: 400 V VDS margin accommodates 380 V DC link plus line surges; 1.8 Ω RDS(on) minimizes conduction loss at 3.1 A peak current.

Use Scenario: 48 V input to 5/12 V isolated buck-derived converter in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or asymmetrical half-bridge topology.

Use Value: Repetitive avalanche rating absorbs leakage inductance energy without snubber, simplifying magnetics design.

LED Driver Power StagesAC Motor Control Auxiliary Supplies

Use Scenario: Constant-current LED driver with 300–400 V DC bus for streetlight or high-bay lighting.

IC Role / Device Role / Timing Role: Primary switch in buck-boost or SEPIC topology driving 1–3 A strings.

Use Value: 20 nC Qg enables efficient 100–200 kHz operation with minimal gate driver loss; body diode handles reverse recovery during duty-cycle transitions.

Use Scenario: Auxiliary 15 V/500 mA supply powering gate drivers and MCU in 3-phase IGBT inverter drives.

IC Role / Device Role / Timing Role: Regulated flyback switch supplying isolated bias rails under variable load and input conditions.

Use Value: 4.0 V/ns dV/dt immunity prevents false triggering during IGBT switching noise; DPAK thermal pad ensures stable 2.5 W operation on compact PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFR320TRLPbF-BE3Same die, identical RDS(on), Qg, and avalanche specs; Pb-free but non-halogen-free constructionNo functional difference in circuit operation or thermal performance; differs only in material complianceSelect when RoHS-6 compliance suffices without halogen-free requirement
STP4NK40ZFP400 V, 3.5 A, 2.2 Ω RDS(on), 22 nC Qg; TO-220FP package (not surface-mount)Higher RDS(on) and larger footprint; lacks DPAK thermal pad for PCB conduction coolingUse only if through-hole assembly is mandatory and board space permits larger package

Compared with SIHFR320TRL-GE3, IRFR320TRLPbF-BE3 offers identical electrical and thermal performance with different environmental compliance, while STP4NK40ZFP trades surface-mount convenience and lower on-resistance for through-hole reliability and higher current rating-but requires layout redesign due to TO-220FP footprint and thermal path.

Availability

SIHFR320TRL-GE3 is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply across extended production cycles.

Supply support for SIHFR320TRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and power applications.

The SIHFR320TRL-GE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness, fast switching, and cost-effective integration into compact, high-efficiency power conversion systems.

FAQ

What is the maximum continuous drain current for SIHFR320TRL-GE3 at 100 °C case temperature?

The SIHFR320TRL-GE3 supports 2.0 A continuous drain current when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be verified against actual PCB layout and heatsinking in the final design. The SIHFR320TRL-GE3 datasheet confirms this value under TC = 100 °C conditions.

Does SIHFR320TRL-GE3 have a built-in body diode, and what are its key recovery parameters?

Yes, the SIHFR320TRL-GE3 integrates a monolithic body diode with typical reverse recovery time (trr) of 270–600 ns and reverse recovery charge (Qrr) of 1.4–3.0 μC at TJ = 25 °C, IF = 3.3 A, and dI/dt = 100 A/μs. These values directly impact efficiency and EMI in freewheeling applications. The SIHFR320TRL-GE3 body diode is rated for 3.1 A continuous source-drain current.

Is SIHFR320TRL-GE3 suitable for avalanche operation, and what is its repetitive avalanche energy rating?

Yes, the SIHFR320TRL-GE3 is explicitly rated for repetitive avalanche operation with 4.2 mJ per pulse at TJ ≤ 150 °C. This allows safe operation in unclamped inductive switching scenarios such as snubberless flyback converters. The SIHFR320TRL-GE3 datasheet specifies this under "Repetitive avalanche energy" in the Absolute Maximum Ratings table.

What is the gate threshold voltage range for SIHFR320TRL-GE3, and how does it affect drive requirements?

The SIHFR320TRL-GE3 has a gate-source threshold voltage (VGS(th)) range of 2.0–4.0 V at ID = 250 μA, ensuring compatibility with standard 10 V gate drivers while preventing unintended turn-on from noise. This range guarantees full enhancement at VGS = 10 V, as confirmed by the SIHFR320TRL-GE3 specifications table.

What package type and thermal characteristics define the SIHFR320TRL-GE3 mounting approach?

The SIHFR320TRL-GE3 uses the DPAK (TO-252) surface-mount package with an exposed drain pad, supporting vapor-phase, infrared, or wave soldering. Its thermal resistance is RthJC = 3.0 °C/W (junction-to-case) and RthJA = 50 °C/W (junction-to-ambient on PCB), enabling 2.5 W dissipation on a 1" square FR-4 board. The SIHFR320TRL-GE3 package outline matches JEDEC TO-252AA standards.

SIHFR320TRL-GE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA

SIHFR320TRL-GE3 FAQ

1.How can I place an order for SIHFR320TRL-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR320TRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR320TRL-GE3 reliable?

The price and inventory of SIHFR320TRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR320TRL-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR320TRL-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR320TRL-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR320TRL-GE3?

SIHFR320TRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR320TRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR320TRL-GE3?

For technical support, including SIHFR320TRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR320TRL-GE3 requirements.

6.How does Aetrix verify that SIHFR320TRL-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR320TRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR320TRL-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR320TRL-GE3?

All SIHFR320TRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR320TRL-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR320TRL-GE3 part is unused and in its original packaging.

Return procedure for SIHFR320TRL-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SIHFR320TRL-GE3 Tags

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