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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR420A-GE3

Name: SIHFR420A-GE3
Brand: Vishay Siliconix
SKU: SIHFR420A-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR420A-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR420A-GE3.pdf

Description:: MOSFET N-CH 500V 3.3A DPAK

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Product details

Overview

SIHFR420A-GE3 from Vishay Siliconix is a 500 V, 3.3 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS and UPS systems.

For engineers reviewing the SIHFR420A-GE3 datasheet, SIHFR420A-GE3 pinout, SIHFR420A-GE3 application, or SIHFR420A-GE3 equivalent, key selection criteria include its 500 V V_DS, rugged unclamped inductive switching capability, low Q_g/Q_gd ratio for fast turn-on/turn-off control, and TO-252 thermal performance with R_thJC = 1.5 °C/W.

Technical Context

This MOSFET employs planar vertical DMOS technology optimized for high-voltage hard-switching applications. Its gate structure delivers low Q_g (17 nC max) and balanced Q_gs/Q_gd (4.3 nC / 8.5 nC), enabling clean voltage transitions under 400 V V_DS conditions with 2.5 A drain current.

It integrates a robust body diode with 330–500 ns reverse recovery time (t_rr) and 760–1140 μC Q_rr, rated for repetitive avalanche current up to 2.5 A and single-pulse EAS of 140 mJ - validated per Fig. 12 waveforms with L = 45 mH, R_g = 25 Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in universal-input AC/DC converters up to 400 V DC bus.
R_DS(on) @ V_GS = 10 V	3.0 Ω max - determines conduction loss in continuous 2.1 A operation at T_C = 100 °C.
Q_g max	17 nC - defines gate driver current requirement for <10 ns turn-on delay and 12 ns rise time at R_g = 21 Ω.
EAS	140 mJ - enables reliable unclamped inductive switching without external snubbers in flyback or forward topologies.
t_r/t_f	12 ns / 13 ns - supports >500 kHz switching frequency with minimal overlap loss in hard-switched designs.
T_J range	−55 °C to +150 °C - ensures operation across industrial ambient conditions with derated I_D above 100 °C.
R_thJC	1.5 °C/W - allows 83 W power dissipation at T_C = 25 °C; requires ≥2 cm² copper pour for thermal management.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction to PCB copper. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source (viewed from top, marking side up, leads down).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≤±30 V drive; low Q_g enables simple gate driver design.
D	Drain terminal	High-side switch node; connects to drain pad (exposed metal on bottom); carries full load current and 500 V transient stress.
S	Source terminal	Reference node for gate drive; ties to power ground; body diode anode; must be low-inductance path for dI/dt stability.

Key Features

Feature	Design Value
Low Q_g (17 nC)	Reduces gate drive power and enables use of low-cost SOT-23 MOSFET drivers in space-constrained SMPS designs.
Enhanced avalanche ruggedness	Validated 140 mJ EAS and 2.5 A I_AR allow operation without snubber circuits in inductive load switching.
Characterized C_{oss eff.}	28 pF effective output capacitance improves predictability of turn-off timing and voltage overshoot in hard-switched converters.
Peak dV/dt rating	3.4 V/ns - suppresses false turn-on during high dv/dt transients in high-frequency bridge configurations.
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's "Green" material policy (Doc. 99912).

Applications

Offline AC/DC Power Supplies	Uninterruptible Power Supplies (UPS)
Use Scenario: Primary-side switch in 65–300 W flyback or forward converter operating from 85–265 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer; operates at 65–130 kHz with zero-voltage switching assist. Use Value: 500 V V_DS margin accommodates 385 V DC link spikes; 140 mJ EAS prevents failure during output short-circuit events.	Use Scenario: Inverter stage H-bridge switch in line-interactive UPS delivering 500–1500 VA output. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional battery charging and AC inversion; driven by isolated gate driver. Use Value: 3.0 Ω R_DS(on) limits conduction loss at 3.3 A RMS; 150 °C T_J rating sustains operation during extended battery backup mode.
Industrial Motor Drives	LED Driver Circuits
Use Scenario: Half-bridge high-side switch in 100–500 W brushless DC motor controller for HVAC blowers. IC Role / Device Role / Timing Role: Fast-switching power device synchronized with complementary low-side FET; handles 400 V bus transients. Use Value: 12 ns rise time minimizes switching loss during PWM commutation; 3.4 V/ns dV/dt immunity prevents shoot-through in noisy EMI environments.	Use Scenario: Constant-current buck switch in outdoor LED streetlight driver with 300–400 V DC input. IC Role / Device Role / Timing Role: Main power switch regulating LED string current; thermally coupled to aluminum heatsink via DPAK drain pad. Use Value: R_thJC = 1.5 °C/W enables direct mounting to heatsink; 1.6 V V_SD body diode drop supports synchronous rectification during freewheeling.

Offline AC/DC Power Supplies

Uninterruptible Power Supplies (UPS)

Use Scenario: Primary-side switch in 65–300 W flyback or forward converter operating from 85–265 V AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer; operates at 65–130 kHz with zero-voltage switching assist.

Use Value: 500 V V_DS margin accommodates 385 V DC link spikes; 140 mJ EAS prevents failure during output short-circuit events.

Use Scenario: Inverter stage H-bridge switch in line-interactive UPS delivering 500–1500 VA output.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional battery charging and AC inversion; driven by isolated gate driver.

Use Value: 3.0 Ω R_DS(on) limits conduction loss at 3.3 A RMS; 150 °C T_J rating sustains operation during extended battery backup mode.

Industrial Motor Drives

LED Driver Circuits

Use Scenario: Half-bridge high-side switch in 100–500 W brushless DC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: Fast-switching power device synchronized with complementary low-side FET; handles 400 V bus transients.

Use Value: 12 ns rise time minimizes switching loss during PWM commutation; 3.4 V/ns dV/dt immunity prevents shoot-through in noisy EMI environments.

Use Scenario: Constant-current buck switch in outdoor LED streetlight driver with 300–400 V DC input.

IC Role / Device Role / Timing Role: Main power switch regulating LED string current; thermally coupled to aluminum heatsink via DPAK drain pad.

Use Value: R_thJC = 1.5 °C/W enables direct mounting to heatsink; 1.6 V V_SD body diode drop supports synchronous rectification during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 Ω R_DS(on), 12 nC Q_g, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g improves switching speed but lacks EAS characterization	Prefer when board space allows through-hole mounting and thermal mass compensates for higher on-resistance.
IXTP50N10P	100 V, 50 A, 0.022 Ω R_DS(on), TO-220 package	Lower voltage rating limits use to secondary-side or low-bus applications; unsuitable for 400 V DC input stages	Select only for low-voltage, high-current DC/DC stages where 500 V capability is unnecessary.

Compared with STP5NK50ZFP and IXTP50N10P, SIHFR420A-GE3 uniquely balances 500 V rating, 3.0 Ω on-resistance, and fully characterized avalanche performance in a surface-mount DPAK - making it optimal for compact, high-reliability offline power conversion where layout area and thermal interface efficiency are critical.

Availability

SIHFR420A-GE3 is available at Aetrix Electronics and suitable for offline AC/DC power supplies, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for SIHFR420A-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHFR420A-GE3 belongs to Vishay's high-voltage power MOSFET family engineered for rugged, high-efficiency switching in industrial and telecom power systems - emphasizing avalanche survivability, low gate charge, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for SIHFR420A-GE3 at 100 °C case temperature?

The SIHFR420A-GE3 has a continuous drain current rating of 2.1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; operation above this current requires active cooling or reduced duty cycle to maintain junction temperature below 150 °C. The SIHFR420A-GE3 datasheet confirms this value under linear derating conditions.

Does SIHFR420A-GE3 support logic-level gate drive?

No, SIHFR420A-GE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.5 V, and it is characterized for R_DS(on) at V_GS = 10 V. Driving it reliably at 5 V may result in incomplete turn-on and excessive conduction loss. The SIHFR420A-GE3 requires a 10 V gate drive for specified 3.0 Ω on-resistance and optimal switching performance.

What is the body diode reverse recovery charge (Q_rr) specification for SIHFR420A-GE3?

The SIHFR420A-GE3 specifies Q_rr = 760–1140 μC under test conditions of T_J = 25 °C, I_F = 2.5 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in hard-commutated topologies. The SIHFR420A-GE3 datasheet provides these values in the Drain-Source Body Diode Characteristics table on page 2.

Can SIHFR420A-GE3 be used in avalanche mode repeatedly?

Yes, SIHFR420A-GE3 is rated for repetitive avalanche operation with I_AR = 2.5 A and E_AR = 5.0 mJ per pulse, provided pulse width and duty cycle remain within limits defined in Note a (Fig. 11) and thermal constraints are observed. The SIHFR420A-GE3 datasheet explicitly characterizes this capability, distinguishing it from non-avalanche-rated MOSFETs.

What is the thermal resistance from junction to case (R_thJC) for SIHFR420A-GE3?

The SIHFR420A-GE3 has a maximum junction-to-case (drain) thermal resistance of 1.5 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to heat flow from the silicon die to the exposed drain pad, and assumes proper soldering to a minimum 2 cm² copper area. The SIHFR420A-GE3 package outline (TO-252) is optimized for this thermal path.

SIHFR420A-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR420A-GE3 FAQ

1.How can I place an order for SIHFR420A-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR420A-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR420A-GE3 reliable?

The price and inventory of SIHFR420A-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR420A-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR420A-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR420A-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR420A-GE3?

SIHFR420A-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR420A-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR420A-GE3?

For technical support, including SIHFR420A-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR420A-GE3 requirements.

6.How does Aetrix verify that SIHFR420A-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR420A-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR420A-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR420A-GE3?

All SIHFR420A-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR420A-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR420A-GE3 part is unused and in its original packaging.

Return procedure for SIHFR420A-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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