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Vishay Siliconix SIHFR420TRL-GE3
- Part No.:
- SIHFR420TRL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR420TRL-GE3.pdf
- Description:
- MOSFET N-CH 500V 2.4A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,244
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Product details
Overview
SIHFR420TRL-GE3 from Vishay Siliconix is a 500 V, 2.4 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 3.0 Ω RDS(on) at VGS = 10 V, 19 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC auxiliary supplies, and offline switch-mode power supplies.
For engineers reviewing the SIHFR420TRL-GE3 datasheet, SIHFR420TRL-GE3 pinout, SIHFR420TRL-GE3 application, or SIHFR420TRL-GE3 equivalent, key selection criteria include its 500 V blocking capability, 2.4 A continuous drain current at TC = 25 °C, 42 W maximum power dissipation, dV/dt ruggedness of 3.5 V/ns, and compatibility with standard vapor-phase and wave soldering processes.
Technical Context
This third-generation power MOSFET employs planar vertical DMOS technology optimized for fast switching and rugged unclamped inductive switching performance. Its dynamic dV/dt rating and 400 mJ single-pulse avalanche energy support reliable operation in flyback and forward converter topologies with high di/dt stress.
The device integrates a low-Qgd/Qg ratio (13/19 nC), enabling reduced Miller-induced turn-off delay and improved gate drive efficiency. Its body diode exhibits 260–520 ns reverse recovery time and 0.70–1.4 μC Qrr, making it suitable for freewheeling applications where controlled diode conduction is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in 230 VAC offline SMPS without derating |
| RDS(on) | 3.0 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 2.4 A ID |
| ID (continuous) | 2.4 A @ TC = 25 °C - defines thermal design margin for PCB-mounted heatsinking |
| Qg | 19 nC - determines gate driver current requirement (~1.9 mA avg. for 100 kHz fsw) |
| EAS | 400 mJ - allows safe operation under unclamped inductive load transients |
| dV/dt rating | 3.5 V/ns - prevents spurious turn-on in high-noise, high-dV/dt environments |
| TJ range | −55 to +150 °C - supports industrial and extended-temperature power supply designs |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; lead (Pb)-free and halogen-free per Vishay specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard PWM controllers |
| D (Drain) | High-side power output | Connected to exposed thermal pad; carries full switched current and must be routed over copper pour for thermal management |
| S (Source) | Reference node / return path | Provides ground reference for gate drive; internal source inductance (7.5 nH) affects switching waveform fidelity |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation in inductive load switching without external snubbers (IAR = 2.4 A, EAR = 4.2 mJ) |
| Dynamic dV/dt rating | 3.5 V/ns immunity prevents false triggering during high-slew-rate voltage transitions |
| Fast switching performance | Turn-on delay 8.0 ns, rise time 8.6 ns, turn-off delay 33 ns, fall time 16 ns at VDD = 250 V |
| Surface-mount (DPAK) | Compatible with automated assembly; thermal resistance RthJC = 3.0 °C/W enables compact heatsink integration |
| Low Qgd/Qg ratio | 68 % (13/19 nC) reduces Miller plateau duration and improves controllability during hard switching |
Applications
| AC-DC Auxiliary Power Supply | Offline Flyback Converter |
|---|---|
|
Use Scenario: Provides isolated bias supply for PWM controller ICs in universal-input (85–265 VAC) SMPS. IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating at 65–100 kHz with discontinuous conduction mode (DCM). Use Value: 500 V VDS rating eliminates need for voltage clamping; 2.4 A ID supports up to 15 W auxiliary output. |
Use Scenario: Main power switch in single-transistor isolated flyback converters for industrial control and IoT gateways. IC Role / Device Role / Timing Role: High-side switching element handling peak currents up to 8 A (IDM) during transient overload. Use Value: 400 mJ EAS withstands reflected output voltage spikes; dV/dt rating suppresses noise-induced turn-on. |
| DC-DC Boost Converter | LED Driver (High-Voltage String) |
|
Use Scenario: Step-up stage in battery-powered industrial sensors converting 12–24 V input to 300–400 V output. IC Role / Device Role / Timing Role: Synchronous or diode-based boost switch operating at fixed frequency with duty cycle >50 %. Use Value: Low RDS(on) minimizes conduction loss at high average current; 150 °C TJ(max) supports sealed enclosure operation. |
Use Scenario: Constant-current switching element driving 20–40 V LED strings from 300–400 V DC bus in streetlight drivers. IC Role / Device Role / Timing Role: High-side PWM switch modulating LED current at 1–10 kHz with zero-crossing dimming. Use Value: Body diode VSD = 1.6 V enables efficient freewheeling; Qrr = 0.70–1.4 μC limits switching loss during diode recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR420PbF-BE3 | Same die, identical RDS(on), Qg, and avalanche specs; Pb-free variant with BE3 suffix; same DPAK package | No functional difference; qualified for identical use cases including flyback and boost topologies | Select when legacy IR part numbering is required in BOM or for cross-reference traceability |
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 22 nC, TO-220FP package - higher current, lower RDS(on), but through-hole and larger footprint | Better suited for higher-power (>25 W) applications requiring greater thermal mass; not surface-mount compatible | Choose only if board layout permits TO-220FP mounting and higher current headroom is needed |
Compared with SIHFR420TRL-GE3, IRFR420PbF-BE3 offers identical electrical and thermal performance in the same DPAK footprint, while STP5NK50ZFP delivers lower on-resistance and higher current but requires PCB redesign for through-hole placement and thermal relief.
Availability
SIHFR420TRL-GE3 is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, offline flyback converters, and high-voltage DC-DC boost stages requiring stable component supply across industrial, medical, and building automation programs.
Supply support for SIHFR420TRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SIHFR420TRL-GE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for rugged switching performance, fast transition times, and cost-effective implementation in space-constrained power conversion systems.
FAQ
What is the maximum continuous drain current rating for SIHFR420TRL-GE3 at 100 °C case temperature?
The SIHFR420TRL-GE3 has a continuous drain current rating of 1.5 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be used in conjunction with RthJC = 3.0 °C/W to calculate junction temperature rise in actual PCB layouts.
Does SIHFR420TRL-GE3 support logic-level gate drive?
No, SIHFR420TRL-GE3 is not a logic-level MOSFET. Its gate-source threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for RDS(on) at VGS = 10 V. For reliable enhancement-mode operation with low on-resistance, a 10 V gate drive is required-making it incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification.
What is the recommended PCB pad layout for SIHFR420TRL-GE3 in DPAK (TO-252) package?
Vishay recommends a minimum copper pad of 10.668 mm × 5.690 mm (0.420″ × 0.224″) for the drain thermal pad of SIHFR420TRL-GE3, per Application Note 826. Thermal vias under the pad (≥6×0.3 mm diameter) connected to inner-layer ground planes are strongly advised to achieve RthJA ≤ 50 °C/W in PCB-mount configurations.
Can SIHFR420TRL-GE3 be used in parallel configurations?
Yes, SIHFR420TRL-GE3 is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. However, matched gate resistors (≤18 Ω), symmetrical PCB routing, and individual gate drive paths are required to ensure balanced switching and avoid oscillation or shoot-through.
What is the body diode reverse recovery charge (Qrr) of SIHFR420TRL-GE3, and why does it matter?
The SIHFR420TRL-GE3 body diode has a reverse recovery charge Qrr of 0.70–1.4 μC, measured at TJ = 25 °C, IF = 2.1 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses during hard-commutation events-especially in flyback and boost converters-where excessive Qrr increases ESW and generates EMI via rapid diode turn-off current spikes.
SIHFR420TRL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR420TRL-GE3 FAQ
1.How can I place an order for SIHFR420TRL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR420TRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR420TRL-GE3 reliable?
The price and inventory of SIHFR420TRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR420TRL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR420TRL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR420TRL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR420TRL-GE3?
SIHFR420TRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR420TRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR420TRL-GE3?
For technical support, including SIHFR420TRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR420TRL-GE3 requirements.
6.How does Aetrix verify that SIHFR420TRL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR420TRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR420TRL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR420TRL-GE3?
All SIHFR420TRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR420TRL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR420TRL-GE3 part is unused and in its original packaging.
Return procedure for SIHFR420TRL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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