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Vishay Siliconix SIHFR430ATRL-GE3
- Part No.:
- SIHFR430ATRL-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR430ATRL-GE3.pdf
- Description:
- MOSFET N-CH 500V 5A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,878
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Product details
Overview
SIHFR430ATRL-GE3 from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 1.7 Ω RDS(on) at VGS = 10 V, 24 nC total gate charge, and 130 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS and UPS systems.
For engineers reviewing the SIHFR430ATRL-GE3 datasheet, SIHFR430ATRL-GE3 pinout, SIHFR430ATRL-GE3 application, or SIHFR430ATRL-GE3 equivalent, key selection criteria include its 500 V VDS, rugged unclamped inductive switching capability, low Qg/Qgd ratio for fast turn-on/turn-off control, and TO-252 thermal performance with RthJC = 1.1 °C/W.
Technical Context
This MOSFET employs planar silicon technology optimized for high-voltage hard-switching applications. Its gate structure delivers low Qg (24 nC) and balanced Qgd/Qgs ratio (13 nC / 6.5 nC), enabling clean voltage transitions under high dV/dt stress up to 3.0 V/ns.
The device integrates a robust body diode with 410–620 ns reverse recovery time and 1.4–2.1 μC Qrr, supporting synchronous rectification and freewheeling in flyback and forward converters where controlled diode conduction is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports primary-side switching in universal-input AC/DC supplies up to 400 V DC bus. |
| RDS(on) @ VGS = 10 V | 1.7 Ω - limits conduction loss to ≤4.3 W at 5.0 A continuous drain current (TC = 25 °C). |
| Qg (max) | 24 nC - enables direct drive from standard PWM controllers without gate driver amplification. |
| EAS | 130 mJ - withstands unclamped inductive energy spikes in relay driving or transformer reset circuits. |
| RthJC | 1.1 °C/W - allows 110 W power dissipation with minimal junction-to-case temperature rise under heatsink mounting. |
| VGS(th) | 2.0–4.5 V - ensures reliable turn-on with 5 V logic-level gate drivers while avoiding spurious activation. |
| ID (continuous, TC = 100 °C) | 3.2 A - defines usable current derating for sustained operation in enclosed industrial enclosures. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; 3-terminal configuration (G, D, S) compatible with IPC-7351B footprint code SOT223-3_DPAK.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V gate drive to fully enhance channel; low 6.5 nC Qgs minimizes Miller-induced oscillation risk. |
| D (Drain) | High-side power terminal | Connected to 500 V DC bus; electrically tied to exposed copper pad for thermal path to PCB heatsink. |
| S (Source) | Reference and return path | Provides ground reference for gate drive and current sensing; source inductance must be minimized to suppress ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | 24 nC total gate charge with 13 nC Qgd enables precise timing control in high-frequency (>100 kHz) SMPS designs. |
| Characterized Coss eff. | 51 pF effective output capacitance ensures predictable turn-off loss and snubber design across 0–400 V VDS. |
| Avalanche-rated | 130 mJ single-pulse EAS and 11 mJ repetitive EAR allow safe operation during transient overloads without external clamping. |
| Body diode dV/dt ruggedness | Rated for 3.0 V/ns peak diode recovery dV/dt - prevents false turn-on during high-speed commutation in bridge topologies. |
| Lead (Pb)-free & halogen-free | Meets RoHS Directive 2011/65/EU and Vishay's material compliance standard #99912 for green manufacturing. |
Applications
| Offline AC/DC Adapters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Primary-side switch in 65–300 W flyback converters accepting 85–265 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary winding; operates at 65–130 kHz with hard switching. Use Value: 500 V VDS margin accommodates line surges and reflected transients; 1.7 Ω RDS(on) keeps conduction losses below 5% at full load. |
Use Scenario: Inverter stage H-bridge switch in 1–3 kVA double-conversion UPS systems. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current during battery backup mode; subjected to repetitive avalanche stress. Use Value: 130 mJ EAS rating absorbs inductive kickback from transformer leakage inductance without failure. |
| Industrial Motor Drives | LED Streetlight Drivers |
Use Scenario: Half-bridge high-side switch in 0.5–2 kW brushless DC motor controllers for HVAC blowers. IC Role / Device Role / Timing Role: Fast-switching power transistor gated by isolated gate driver; duty cycle modulated for speed control. Use Value: 3.0 V/ns dV/dt rating prevents parasitic turn-on during cross-conduction; 24 nC Qg supports <100 ns dead-time requirements. |
Use Scenario: Buck-boost PFC pre-regulator switch in outdoor LED luminaires operating at -40 to +85 °C ambient. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) switch managing sinusoidal input current shaping. Use Value: 150 °C max TJ and 1.1 °C/W RthJC enable stable operation on aluminum-core PCBs without active cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.4 Ω, Qg = 22 nC, TO-220FP package | Higher current density but through-hole mounting; lacks DPAK thermal interface efficiency | Prefer when board space permits leaded assembly and higher peak current is needed. |
| IXTP50N10P | 100 V, 50 A, RDS(on) = 0.022 Ω, Qg = 75 nC, TO-220 package | Lower voltage rating; unsuitable for 400 V bus applications; optimized for low-VDS high-current loads | Only viable in low-voltage DC-fed systems (<100 V); not interchangeable in AC/DC front-end designs. |
Compared with STP5NK50ZFP and IXTP50N10P, SIHFR430ATRL-GE3 provides optimal balance of 500 V rating, DPAK thermal performance, and gate drive simplicity for compact, surface-mounted high-voltage switching - making it uniquely suited for space-constrained offline power stages where TO-220 alternatives require additional layout area and thermal vias.
Availability
SIHFR430ATRL-GE3 is available at Aetrix Electronics and suitable for switch mode power supply (SMPS), uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIHFR430ATRL-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SIHFR430ATRL-GE3 belongs to Vishay's high-voltage power MOSFET family engineered for ruggedness in hard-switched offline power conversion - emphasizing avalanche energy handling, dV/dt immunity, and thermally efficient DPAK packaging.
FAQ
What is the maximum continuous drain current for SIHFR430ATRL-GE3 at 100 °C case temperature?
The SIHFR430ATRL-GE3 supports 3.2 A continuous drain current at TC = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; operation above this current requires active heatsinking or reduced ambient temperature to maintain TJ ≤ 150 °C. The SIHFR430ATRL-GE3 datasheet specifies linear derating beyond 25 °C at 0.91 W/°C.
Does SIHFR430ATRL-GE3 have avalanche capability, and how is it rated?
Yes, SIHFR430ATRL-GE3 is fully rated for avalanche operation: 130 mJ single-pulse avalanche energy (EAS) and 11 mJ repetitive avalanche energy (EAR) at TJ = 25 °C. These values are measured under standardized unclamped inductive test conditions (L = 11 mH, IAS = 5.0 A, Rg = 25 Ω) and are guaranteed per Vishay's characterization protocol. The SIHFR430ATRL-GE3 is designed to safely absorb such energy without parameter degradation.
What is the gate threshold voltage range for SIHFR430ATRL-GE3, and how does it affect drive compatibility?
The SIHFR430ATRL-GE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.5 V at ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V gate drivers while preventing accidental activation from noise or leakage. The SIHFR430ATRL-GE3 is not a logic-level MOSFET; it requires ≥10 V VGS to achieve its specified 1.7 Ω RDS(on), so 3.3 V microcontroller outputs cannot fully enhance it without level-shifting.
Can SIHFR430ATRL-GE3 be used in place of IRFR430APbF, and what are the key differences?
Yes, SIHFR430ATRL-GE3 is the RoHS-compliant, lead-free/halogen-free replacement for IRFR430APbF, sharing identical electrical specifications, pinout, and DPAK package dimensions. Key differences include Pb-free plating (GE3 suffix), tighter Qg distribution per Vishay's enhanced process control, and updated material compliance per Vishay document #99912. The SIHFR430ATRL-GE3 maintains full functional and mechanical interchangeability with IRFR430APbF in existing designs.
What is the recommended PCB pad layout for SIHFR430ATRL-GE3 in DPAK (TO-252) package?
Vishay recommends minimum copper pads per Application Note 826: 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain thermal pad, with 0.055" (1.397 mm) solder mask opening and ≥4 thermal vias (0.010" diameter) to inner ground plane. Gate and source pads should be ≥0.087" wide to minimize inductance. The SIHFR430ATRL-GE3 thermal performance depends critically on this layout - inadequate copper area increases RthJA beyond the rated 62 °C/W.
SIHFR430ATRL-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.7Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR430ATRL-GE3 FAQ
1.How can I place an order for SIHFR430ATRL-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR430ATRL-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR430ATRL-GE3 reliable?
The price and inventory of SIHFR430ATRL-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR430ATRL-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR430ATRL-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR430ATRL-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR430ATRL-GE3?
SIHFR430ATRL-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR430ATRL-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR430ATRL-GE3?
For technical support, including SIHFR430ATRL-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR430ATRL-GE3 requirements.
6.How does Aetrix verify that SIHFR430ATRL-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR430ATRL-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR430ATRL-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR430ATRL-GE3?
All SIHFR430ATRL-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR430ATRL-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR430ATRL-GE3 part is unused and in its original packaging.
Return procedure for SIHFR430ATRL-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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