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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR430ATRR-GE3

Name: SIHFR430ATRR-GE3
Brand: Vishay Siliconix
SKU: SIHFR430ATRR-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR430ATRR-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR430ATRR-GE3.pdf

Description:: MOSFET N-CH 500V 5A DPAK

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Product details

Overview

SIHFR430ATRR-GE3 from Vishay Siliconix is a 500 V, 5.0 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring R_DS(on) = 1.7 Ω at V_GS = 10 V, Q_g = 24 nC, and 130 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS and UPS systems.

For engineers reviewing the SIHFR430ATRR-GE3 datasheet, SIHFR430ATRR-GE3 pinout, SIHFR430ATRR-GE3 application, or SIHFR430ATRR-GE3 equivalent, key selection criteria include its 500 V V_DS, 1.7 Ω on-resistance at 10 V gate drive, 24 nC total gate charge, rugged dV/dt capability (3.0 V/ns), and TO-252 thermal performance (R_thJC = 1.1 °C/W).

Technical Context

This device operates as a unidirectional high-side or low-side switch with fully characterized C_iss (490 pF), C_oss (75 pF), and C_rss (4.5 pF) enabling accurate snubber and gate drive design. Its body diode exhibits t_rr = 410–620 ns and Q_rr = 1.4–2.1 μC under 5.0 A/100 A/μs conditions, supporting moderate-frequency hard-switched topologies.

The MOSFET delivers stable R_DS(on) over temperature (ΔR_DS(on)/T_J ~ +0.5%/°C), features V_GS(th) = 2.0–4.5 V for reliable turn-on margin, and sustains repetitive avalanche current I_AR = 5.0 A - confirming suitability for inductive load switching with unclamped energy handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V DC bus designs with 25 % safety margin for surge and ringing
R_DS(on) @ V_GS = 10 V	1.7 Ω - enables ≤1.7 W conduction loss at 5.0 A continuous drain current
Q_g	24 nC - determines gate driver current requirement (~1.2 A peak for 20 ns rise time)
I_D (continuous, T_C = 25 °C)	5.0 A - defines maximum steady-state current with heatsink at case temperature ≤25 °C
E_AS	130 mJ - quantifies single-pulse inductive energy absorption without failure
t_r / t_f	27 ns / 16 ns - sets minimum practical switching period for <1 MHz operation
dV/dt rating	3.0 V/ns - ensures immunity to parasitic turn-on in high-dV/dt environments like flyback primary

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal conduction and mechanical mounting; 3-terminal surface-mount configuration optimized for PCB heat spreading and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 6.5 nC Q_gs enables fast turn-on with low drive power
D (Drain)	High-voltage output terminal	Connected to exposed copper pad; carries full load current and dissipates heat to PCB
S (Source)	Reference node and current return	Provides ground reference for gate drive; used for current sensing in low-side configurations

Key Features

Feature	Design Value
Low Q_g (24 nC)	Reduces gate drive losses and simplifies driver selection for 100 kHz–500 kHz SMPS
Specified C_{oss eff.} (51 pF)	Enables accurate calculation of turn-off loss and resonant timing in LLC or flyback converters
130 mJ E_AS	Supports robust operation in unclamped inductive switching without external snubbers
3.0 V/ns dV/dt ruggedness	Prevents false triggering during high-slew-rate transients in high-voltage primary circuits
1.7 Ω R_DS(on) @ 10 V	Delivers low conduction loss while maintaining gate drive compatibility with standard 10 V controllers

Applications

Switch Mode Power Supply	Uninterruptible Power Supply
Use Scenario: Primary-side switching in 30–100 W offline flyback converters with universal AC input. IC Role / Device Role: High-voltage power switch controlling energy transfer from AC line to isolated DC output. Use Value: 500 V rating accommodates 400 V DC bus with margin; 1.7 Ω R_DS(on) limits conduction loss to ≤4.25 W at 5 A.	Use Scenario: Battery charging and inverter stage switching in 500–2000 VA line-interactive UPS units. IC Role / Device Role: Bidirectional power flow control between rectified AC and battery-backed DC bus. Use Value: 130 mJ E_AS handles inductive kickback during transfer switching; 5.0 A I_D supports typical 12–24 V/20–50 A battery interfaces.
DC-DC Converter	Industrial Motor Drive
Use Scenario: Isolated forward or half-bridge DC-DC stage converting 400 V DC bus to 12–48 V for control electronics. IC Role / Device Role: Synchronous rectifier or primary-side switch in fixed-frequency PWM topologies. Use Value: Low Q_gd (13 nC) minimizes Miller-induced delay; C_oss = 75 pF reduces capacitive turn-off loss.	Use Scenario: Gate driving of IGBTs or SiC MOSFETs in 3-phase inverter half-bridges for 0.5–2 kW pumps/fans. IC Role / Device Role: High-side level-shifted bootstrap switch supplying gate voltage to upper-leg drivers. Use Value: V_GS(th) = 2.0–4.5 V ensures clean turn-on with bootstrap voltage ≥8 V; dV/dt immunity prevents shoot-through.

Switch Mode Power Supply

Uninterruptible Power Supply

Use Scenario: Primary-side switching in 30–100 W offline flyback converters with universal AC input.

IC Role / Device Role: High-voltage power switch controlling energy transfer from AC line to isolated DC output.

Use Value: 500 V rating accommodates 400 V DC bus with margin; 1.7 Ω R_DS(on) limits conduction loss to ≤4.25 W at 5 A.

Use Scenario: Battery charging and inverter stage switching in 500–2000 VA line-interactive UPS units.

IC Role / Device Role: Bidirectional power flow control between rectified AC and battery-backed DC bus.

Use Value: 130 mJ E_AS handles inductive kickback during transfer switching; 5.0 A I_D supports typical 12–24 V/20–50 A battery interfaces.

DC-DC Converter

Industrial Motor Drive

Use Scenario: Isolated forward or half-bridge DC-DC stage converting 400 V DC bus to 12–48 V for control electronics.

IC Role / Device Role: Synchronous rectifier or primary-side switch in fixed-frequency PWM topologies.

Use Value: Low Q_gd (13 nC) minimizes Miller-induced delay; C_oss = 75 pF reduces capacitive turn-off loss.

Use Scenario: Gate driving of IGBTs or SiC MOSFETs in 3-phase inverter half-bridges for 0.5–2 kW pumps/fans.

IC Role / Device Role: High-side level-shifted bootstrap switch supplying gate voltage to upper-leg drivers.

Use Value: V_GS(th) = 2.0–4.5 V ensures clean turn-on with bootstrap voltage ≥8 V; dV/dt immunity prevents shoot-through.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 1.4 Ω, Q_g = 22 nC, TO-220FP package	Higher current density but through-hole; lacks DPAK thermal interface and surface-mount compatibility	Choose when board space allows through-hole mounting and lower R_DS(on) justifies larger footprint
IRFBC40APBF	600 V, 6.2 A, R_DS(on) = 1.2 Ω, Q_g = 32 nC, TO-220 package	Higher voltage rating and current, but higher gate charge increases driver complexity and switching loss	Choose only if 600 V rating is mandatory and thermal management supports TO-220 dissipation

Compared with STP5NK50ZFP and IRFBC40APBF, SIHFR430ATRR-GE3 offers optimal balance of DPAK mountability, 500 V capability, and 24 nC gate charge - making it preferred for compact, medium-power surface-mount SMPS where thermal coupling to PCB is critical and 600 V margin is unnecessary.

Availability

SIHFR430ATRR-GE3 is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply, RoHS-compliant packaging, and lead (Pb)-free/halogen-free construction.

Supply support for SIHFR430ATRR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SiHFx430A product line targets cost-sensitive, medium-power industrial and consumer power conversion - delivering rugged 500 V switching with optimized gate charge and avalanche performance in DPAK and IPAK packages.

FAQ

What is the maximum continuous drain current for SIHFR430ATRR-GE3 at 100 °C case temperature?

The SIHFR430ATRR-GE3 supports 3.2 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal resistance limitations (R_thJC = 1.1 °C/W) and ensures junction temperature remains within the -55 to +150 °C operating range. The 5.0 A rating applies only at T_C = 25 °C.

Does SIHFR430ATRR-GE3 have avalanche capability, and how is it specified?

Yes, SIHFR430ATRR-GE3 is fully rated for repetitive and single-pulse avalanche. It specifies 130 mJ single-pulse avalanche energy (E_AS) and 5.0 A repetitive avalanche current (I_AR) under defined test conditions (L = 11 mH, R_g = 25 Ω). These values are measured and guaranteed per Vishay's characterization methodology in document 91276.

What is the gate threshold voltage range for SIHFR430ATRR-GE3, and why does it matter?

The SIHFR430ATRR-GE3 has a V_GS(th) range of 2.0 V to 4.5 V at I_D = 250 μA. This wide threshold ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise or leakage - critical in high-voltage systems where false triggering could cause shoot-through or overvoltage events.

Can SIHFR430ATRR-GE3 be used in place of IRFR430ATRPbF?

Yes, SIHFR430ATRR-GE3 is the lead (Pb)-free and halogen-free replacement for IRFR430ATRPbF, sharing identical electrical specifications, pinout, and DPAK (TO-252) package dimensions. Both parts meet the same 500 V V_DS, 1.7 Ω R_DS(on), and 24 nC Q_g performance - with SIHFR430ATRR-GE3 conforming to modern environmental compliance standards.

What is the thermal resistance from junction to case (R_thJC) for SIHFR430ATRR-GE3, and how does it impact heatsinking?

The SIHFR430ATRR-GE3 has a maximum R_thJC of 1.1 °C/W, measured from junction to the drain pad (case). This low value confirms efficient heat transfer from die to PCB copper; effective heatsinking requires a low-thermal-resistance interface (e.g., soldered thermal pad, thermal vias) to maintain T_J ≤ 150 °C under full load.

SIHFR430ATRR-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.7Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 490 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR430ATRR-GE3 FAQ

1.How can I place an order for SIHFR430ATRR-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR430ATRR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR430ATRR-GE3 reliable?

The price and inventory of SIHFR430ATRR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR430ATRR-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR430ATRR-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR430ATRR-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR430ATRR-GE3?

SIHFR430ATRR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR430ATRR-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR430ATRR-GE3?

For technical support, including SIHFR430ATRR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR430ATRR-GE3 requirements.

6.How does Aetrix verify that SIHFR430ATRR-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR430ATRR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR430ATRR-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR430ATRR-GE3?

All SIHFR430ATRR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR430ATRR-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR430ATRR-GE3 part is unused and in its original packaging.

Return procedure for SIHFR430ATRR-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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