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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR9014-GE3

Name: SIHFR9014-GE3
Brand: Vishay Siliconix
SKU: SIHFR9014-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR9014-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR9014-GE3.pdf

Description:: MOSFET P-CH 60V 5.1A DPAK

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Product details

Overview

SIHFR9014-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.50 Ω R_DS(on) at V_GS = -10 V, and -5.1 A continuous drain current at T_C = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switching, and reverse polarity protection circuits.

For engineers reviewing the SIHFR9014-GE3 datasheet, SIHFR9014-GE3 pinout, SIHFR9014-GE3 application, or SIHFR9014-GE3 equivalent, key selection criteria include its -60 V rating, 0.50 Ω on-resistance, 12 nC total gate charge, thermal resistance of 5.0 °C/W junction-to-case, and DPAK footprint compatibility with standard PCB mount thermal management.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized operation under unclamped inductive switching and dynamic dV/dt stress. Its P-channel topology enables high-side switching without level-shifting circuitry, and its low Q_gd/Q_g ratio (5.1/12 nC) supports efficient turn-off control in synchronous buck and OR-ing applications.

The SIHFR9014-GE3 integrates a robust body diode with 80–160 ns reverse recovery time and -5.5 V forward voltage at -5.1 A, enabling reliable freewheeling in flyback and half-bridge topologies. Its 140 mJ single-pulse avalanche energy rating confirms suitability for transient overvoltage conditions in industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage for high-side switch in 48 V systems
R_DS(on)	0.50 Ω @ V_GS = -10 V - Enables <1.3 W conduction loss at 5.1 A
I_D (continuous)	-5.1 A @ T_C = 25 °C - Supports medium-power load switching with heatsink
Q_g	12 nC - Determines gate drive power and switching speed in PWM circuits
R_thJC	5.0 °C/W - Allows direct thermal path to PCB copper or heatsink for 25 W dissipation
E_AS	140 mJ - Withstands single-event inductive energy spikes without failure
V_GS(th)	-2.0 to -4.0 V - Ensures reliable turn-on with standard -5 V or -10 V logic-level gate drivers

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for automated assembly and PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to system ground or low-side rail in high-side switch
Pin 2 (Gate)	Control input	Accepts negative V_GS to turn on; requires <12 nC charge for full enhancement
Pin 3 (Drain)	Power output / high-voltage node	Exposed metal pad on bottom surface - must be connected to PCB copper pour for thermal and current handling

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands repeated -5.1 A inductive current spikes up to 2.5 mJ without degradation
Dynamic dV/dt rated	Stable operation at -4.5 V/ns, preventing false turn-on in noisy high-speed switching
Fast switching	11 ns turn-on delay + 63 ns rise time enables >500 kHz operation in SMPS
Pb-free and halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile requirements
Surface mount (DPAK)	Compatible with vapor phase, infrared, and wave soldering; supports 1" FR-4 PCB thermal derating

Applications

DC-DC Converter High-Side Switch	Reverse Polarity Protection
Use Scenario: Used as upper FET in non-synchronous buck converter for 12 V to 5 V conversion in industrial controllers. IC Role / Device Role / Timing Role: P-channel high-side switch controlling power delivery; operates in hard-switched mode at 250 kHz. Use Value: Low 0.50 Ω R_DS(on) minimizes conduction loss; -60 V rating provides 2× safety margin over 24 V input rails.	Use Scenario: Placed in series with power input to prevent damage from accidental reverse battery connection in automotive telematics units. IC Role / Device Role / Timing Role: Always-on protection FET; conducts only when polarity is correct and V_GS < V_GS(th). Use Value: Fast body diode recovery (80 ns) avoids latch-up during polarity reversal transients; rugged avalanche rating handles surge events.
Load Switch for 24 V Systems	OR-ing Diode Replacement
Use Scenario: Enables/disables 24 V power rail to peripheral modules in programmable logic controllers. IC Role / Device Role / Timing Role: Controlled load switch; driven by microcontroller GPIO with -10 V gate driver. Use Value: -5.1 A continuous rating supports typical module loads; DPAK package allows compact layout with minimal thermal vias.	Use Scenario: Replaces Schottky diode in redundant 48 V power supply OR-ing configuration for telecom shelf systems. IC Role / Device Role / Timing Role: Active OR-ing FET; body diode conducts until gate is pulled low to reduce forward drop. Use Value: -5.5 V V_SD and low R_DS(on) cut conduction loss by >70% vs. 0.45 V Schottky; Q_rr = 0.096 μC limits reverse recovery stress.

DC-DC Converter High-Side Switch

Reverse Polarity Protection

Use Scenario: Used as upper FET in non-synchronous buck converter for 12 V to 5 V conversion in industrial controllers.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling power delivery; operates in hard-switched mode at 250 kHz.

Use Value: Low 0.50 Ω R_DS(on) minimizes conduction loss; -60 V rating provides 2× safety margin over 24 V input rails.

Use Scenario: Placed in series with power input to prevent damage from accidental reverse battery connection in automotive telematics units.

IC Role / Device Role / Timing Role: Always-on protection FET; conducts only when polarity is correct and V_GS < V_GS(th).

Use Value: Fast body diode recovery (80 ns) avoids latch-up during polarity reversal transients; rugged avalanche rating handles surge events.

Load Switch for 24 V Systems

OR-ing Diode Replacement

Use Scenario: Enables/disables 24 V power rail to peripheral modules in programmable logic controllers.

IC Role / Device Role / Timing Role: Controlled load switch; driven by microcontroller GPIO with -10 V gate driver.

Use Value: -5.1 A continuous rating supports typical module loads; DPAK package allows compact layout with minimal thermal vias.

Use Scenario: Replaces Schottky diode in redundant 48 V power supply OR-ing configuration for telecom shelf systems.

IC Role / Device Role / Timing Role: Active OR-ing FET; body diode conducts until gate is pulled low to reduce forward drop.

Use Value: -5.5 V V_SD and low R_DS(on) cut conduction loss by >70% vs. 0.45 V Schottky; Q_rr = 0.096 μC limits reverse recovery stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9014PbF-BE3	Same die, alternate manufacturing location; identical V_DS, R_DS(on), Q_g, and thermal specs	No functional difference; BE3 suffix indicates different fab site, same qualification level	Select when requiring legacy IR part number traceability or dual-sourcing across Vishay fabs
SiHFU9014-GE3	Identical silicon but IPAK (TO-251) through-hole package; same R_DS(on), Q_g, and avalanche ratings	Requires through-hole assembly; higher R_thJA (110 °C/W) limits power in compact layouts	Choose for prototyping, manual assembly, or legacy board designs where DPAK footprint is unavailable

Compared with SIHFR9014-GE3, IRFR9014PbF-BE3 offers identical electrical and thermal performance with no layout impact, while SiHFU9014-GE3 trades surface-mount convenience for through-hole reliability and simplified thermal design at lower power density.

Availability

SIHFR9014-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, reverse polarity protection circuits, and industrial load switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SIHFR9014-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHFR9014-GE3 belongs to Vishay's third-generation power MOSFET product line, designed specifically for high-reliability industrial and automotive power management where avalanche capability, fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current rating for SIHFR9014-GE3 at 100 °C case temperature?

The SIHFR9014-GE3 supports -3.2 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package; designers must ensure adequate PCB copper area or heatsinking to maintain case temperature within this limit during sustained operation.

Does SIHFR9014-GE3 have a specified body diode reverse recovery charge (Q_rr)?

Yes, the SIHFR9014-GE3 has a body diode reverse recovery charge of 0.096–0.19 μC, measured at T_J = 25 °C, I_F = -6.7 A, and dI/dt = 100 A/μs. This parameter is critical for minimizing switching losses and voltage overshoot in freewheeling and OR-ing applications.

Is SIHFR9014-GE3 suitable for logic-level gate drive?

The SIHFR9014-GE3 has a gate-source threshold voltage range of -2.0 V to -4.0 V, making it compatible with -5 V logic-level drivers. However, full enhancement (0.50 Ω R_DS(on)) requires V_GS = -10 V; for optimal conduction loss, a dedicated -10 V gate driver is recommended over marginal -5 V drive.

What is the thermal resistance from junction to ambient for SIHFR9014-GE3 in standard PCB mount?

When mounted on a 1" square FR-4 PCB, the SIHFR9014-GE3 exhibits a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W. This value assumes standard copper pour and via placement per Vishay Application Note 826; actual performance depends on PCB layout and airflow.

Can SIHFR9014-GE3 replace IRFR9014PbF-BE3 in an existing design?

Yes, SIHFR9014-GE3 is a direct replacement for IRFR9014PbF-BE3: both share identical die characteristics, DPAK packaging, pinout, and all electrical specifications including V_DS, R_DS(on), Q_g, and avalanche ratings. No PCB or schematic changes are required.

SIHFR9014-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR9014-GE3 FAQ

1.How can I place an order for SIHFR9014-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR9014-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR9014-GE3 reliable?

The price and inventory of SIHFR9014-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR9014-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR9014-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR9014-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR9014-GE3?

SIHFR9014-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR9014-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR9014-GE3?

For technical support, including SIHFR9014-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR9014-GE3 requirements.

6.How does Aetrix verify that SIHFR9014-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR9014-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR9014-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR9014-GE3?

All SIHFR9014-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR9014-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR9014-GE3 part is unused and in its original packaging.

Return procedure for SIHFR9014-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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