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Vishay Siliconix SIHFR9024TR-GE3
- Part No.:
- SIHFR9024TR-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR9024TR-GE3.pdf
- Description:
- MOSFET P-CH 60V 8.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:774
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Product details
Overview
SIHFR9024TR-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -60 V drain-source voltage, 0.28 Ω RDS(on) at VGS = -10 V, and -8.8 A continuous drain current at TC = 25 °C. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, load switches, and high-side power control in industrial power supplies.
For engineers reviewing the SIHFR9024TR-GE3 datasheet, SIHFR9024TR-GE3 pinout, SIHFR9024TR-GE3 application, or SIHFR9024TR-GE3 equivalent, key selection criteria include its -60 V VDS, low 0.28 Ω on-resistance, 19 nC total gate charge, -5.6 A current rating at 100 °C case temperature, and DPAK thermal performance with RthJC = 3.0 °C/W.
Technical Context
This device uses third-generation trench MOSFET technology to achieve ruggedized avalanche capability and stable gate threshold voltage (-2.0 to -4.0 V). Its dynamic dV/dt rating of -4.5 V/ns and body diode reverse recovery time of 100–200 ns support reliable operation in inductive switching circuits.
The SIHFR9024TR-GE3 integrates a monolithic p-n junction body diode with -6.3 V forward voltage at -8.8 A and 0.32–0.64 μC reverse recovery charge, enabling synchronous rectification and freewheeling functions without external diodes in half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum blocking voltage for high-side switch or reverse polarity protection |
| RDS(on) @ VGS = -10 V | 0.28 Ω - Low conduction loss enabling <1.5 W dissipation in typical SMT layouts |
| ID (continuous, TC = 25 °C) | -8.8 A - Supports medium-power load switching up to ~50 W at 12 V input |
| Qg | 19 nC - Gate drive energy requirement compatible with standard logic-level drivers |
| EAS | 300 mJ - Single-pulse avalanche robustness for unclamped inductive turn-off |
| RthJC | 3.0 °C/W - Enables high-power density thermal design when mounted on heatsinked PCB copper |
| VGS(th) | -2.0 to -4.0 V - Ensures clean turn-on with -5 V or -10 V gate drive, avoiding partial enhancement |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for automated assembly and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or low-side return path |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <100 nA leakage current drive |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper area |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands -8.8 A repetitive avalanche current and 5.0 mJ energy without degradation |
| Dynamic dV/dt rating | -4.5 V/ns - Resists false turn-on during high-speed voltage transients in motor drives |
| Fast switching | 13 ns turn-on delay + 68 ns rise time enables >100 kHz PWM operation |
| Pb-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E material definitions |
| Surface-mount (DPAK) | Compatible with vapor phase, infrared, and wave soldering per IPC-J-STD-020 |
Applications
| DC-DC Buck Converter High-Side Switch | Reverse Polarity Protection |
|---|---|
Use Scenario: Used as high-side switch in non-synchronous buck regulators delivering 3.3 V/5 V from 12–24 V input rails. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active high-side switch; controlled by dedicated gate driver or microcontroller GPIO with level-shifting. Use Value: 0.28 Ω RDS(on) minimizes conduction loss at 3–5 A loads; -60 V rating provides margin against input surge and inductive kickback. | Use Scenario: Placed in series with VIN to block reverse voltage connections in battery-powered instrumentation and field devices. IC Role / Device Role / Timing Role: Unidirectional power path controller; conducts only when VIN is correctly polarized relative to system ground. Use Value: Low 0.28 Ω on-resistance ensures <100 mV drop at 350 mA, preserving battery runtime and reducing heat generation. |
| Motor Drive High-Side Load Switch | Industrial PLC Output Stage |
Use Scenario: Controls power delivery to brushed DC motors in 12–24 V industrial actuators and valve drivers. IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional motor control when paired with N-channel low-side FETs. Use Value: Repetitive avalanche rating absorbs inductive energy during PWM commutation; -4.5 V/ns dV/dt immunity prevents shoot-through in noisy environments. | Use Scenario: Drives 24 V DC solenoids, relays, and indicator LEDs in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay contacts; switched via isolated digital outputs. Use Value: 300 mJ single-pulse avalanche energy protects against inductive load turn-off spikes; -55 to +150 °C operating range suits harsh cabinet environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9024TRPbF-BE3 | Same silicon die, identical RDS(on), Qg, and avalanche specs; lead-free but not halogen-free | No functional difference in circuit operation; differs only in material compliance documentation | Select if RoHS-compliant Pb-free only is required, without halogen-free certification |
| SiHFU9024-GE3 | Same electrical specs but IPAK (TO-251) through-hole package; no exposed drain pad | Requires PCB through-hole mounting and lacks direct thermal path to heatsink copper | Choose for legacy through-hole designs where DPAK rework is impractical |
Compared with SIHFR9024TR-GE3, IRFR9024TRPbF-BE3 offers identical performance with different environmental compliance, while SiHFU9024-GE3 trades surface-mount thermal efficiency for through-hole mechanical robustness-neither is pin-compatible due to differing packages.
Availability
SIHFR9024TR-GE3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and reverse polarity protection circuits requiring stable component supply across multi-year production cycles.
Supply support for SIHFR9024TR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and ruggedized performance.
The SIHFR9024TR-GE3 belongs to Vishay's third-generation power MOSFET family designed specifically for high-efficiency, high-reliability DC-DC conversion and industrial load switching applications.
FAQ
What is the maximum continuous drain current for SIHFR9024TR-GE3 at 100 °C case temperature?
The SIHFR9024TR-GE3 supports -5.6 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and must be verified against actual board layout and heatsinking in the final design. The SIHFR9024TR-GE3 datasheet confirms this value under standard test conditions with proper PCB copper area.
Does SIHFR9024TR-GE3 have an integrated body diode, and what are its key parameters?
Yes, the SIHFR9024TR-GE3 includes an integral reverse p–n junction body diode. Key parameters include -6.3 V forward voltage at -8.8 A and 25 °C, 100–200 ns reverse recovery time, and 0.32–0.64 μC reverse recovery charge. These values are measured per the datasheet test conditions and define freewheeling behavior in inductive switching applications using the SIHFR9024TR-GE3.
Is SIHFR9024TR-GE3 suitable for logic-level gate drive?
No, the SIHFR9024TR-GE3 is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and full enhancement requires -10 V gate-source voltage to achieve the specified 0.28 Ω RDS(on). Driving the SIHFR9024TR-GE3 with only 3.3 V or 5 V logic signals results in significantly higher on-resistance and thermal stress. A dedicated negative gate driver or level shifter is required for reliable operation of the SIHFR9024TR-GE3.
What is the thermal resistance from junction to case (RthJC) for SIHFR9024TR-GE3?
The SIHFR9024TR-GE3 has a maximum junction-to-case (drain) thermal resistance of 3.0 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes proper soldering of the exposed drain pad to a minimum 1" square FR-4 PCB copper area. Actual thermal performance of the SIHFR9024TR-GE3 depends on PCB layout, copper thickness, and heatsinking implementation.
Can SIHFR9024TR-GE3 be used in avalanche mode, and what are the limits?
Yes, the SIHFR9024TR-GE3 is repetitively avalanche rated with IAR = -8.8 A and EAR = 5.0 mJ, and single-pulse rated for EAS = 300 mJ. These ratings assume pulse width and duty cycle limits defined in Figures 11 and 12 of the datasheet. Operation in avalanche mode must be carefully validated for each application, as sustained use affects long-term reliability of the SIHFR9024TR-GE3.
SIHFR9024TR-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR9024TR-GE3 FAQ
1.How can I place an order for SIHFR9024TR-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR9024TR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR9024TR-GE3 reliable?
The price and inventory of SIHFR9024TR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR9024TR-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR9024TR-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR9024TR-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR9024TR-GE3?
SIHFR9024TR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR9024TR-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR9024TR-GE3?
For technical support, including SIHFR9024TR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR9024TR-GE3 requirements.
6.How does Aetrix verify that SIHFR9024TR-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR9024TR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR9024TR-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR9024TR-GE3?
All SIHFR9024TR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR9024TR-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR9024TR-GE3 part is unused and in its original packaging.
Return procedure for SIHFR9024TR-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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