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Vishay Siliconix SIHFR9310-GE3
- Part No.:
- SIHFR9310-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR9310-GE3.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,704
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Product details
Overview
SiHFR9310-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It features fully avalanche-rated ruggedness, fast switching (td(off) = 25 ns), and integrated body diode with 170–260 ns reverse recovery time - used in high-voltage DC-DC converters, industrial motor controls, and offline SMPS hold-up circuits.
For engineers reviewing the SiHFR9310-GE3 datasheet, SiHFR9310-GE3 pinout, SiHFR9310-GE3 application, or SiHFR9310-GE3 equivalent, key selection criteria include its -400 V blocking capability, DPAK thermal performance (RthJC = 2.5 °C/W), avalanche energy rating (EAS = 92 mJ), and compatibility with gate drivers delivering -10 V logic-level drive.
Technical Context
This device belongs to Vishay's third-generation high-voltage P-channel MOSFET family, fabricated using advanced silicon processing to minimize on-resistance per die area while maintaining robust avalanche performance. Its design targets high-reliability, high-voltage switching where unidirectional current control and transient overvoltage tolerance are critical.
The SiHFR9310-GE3 operates as a high-side switch in buck-derived topologies and offline flyback snubber circuits, leveraging its negative threshold voltage (-2.0 to -4.0 V), low Qgd (5.0 nC), and controlled dV/dt immunity (-24 V/ns peak diode recovery rate). It is not logic-level optimized - full enhancement requires VGS ≤ -10 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - supports primary-side switching in 380 V DC bus and 230 V AC rectified applications without derating. |
| RDS(on) | 7.0 Ω @ VGS = -10 V - enables <1.8 A continuous conduction with <22 W conduction loss at TC = 25 °C. |
| Qg | 13 nC - determines gate driver current demand; compatible with standard ±12 V drivers delivering ≥0.5 A peak. |
| EAS | 92 mJ - allows single-pulse inductive energy absorption without failure in unclamped inductive switching (e.g., relay driving). |
| RthJC | 2.5 °C/W - enables 50 W power dissipation with ≤125 °C junction rise above 25 °C case temperature. |
| tr/tf | 10 ns / 24 ns - supports >1 MHz hard-switching in resonant or quasi-resonant converters with minimal switching loss trade-off. |
| VGS(th) | -2.0 to -4.0 V - ensures reliable turn-on only with negative gate bias; prevents accidental activation in floating-gate noise environments. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard lead finish: Pb-free and halogen-free (GE3 suffix). Mounting compatible with vapor-phase, infrared, and wave soldering per Vishay recommendations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to load return or ground in high-side configuration. |
| Pin 2 (Gate) | Control terminal (G) | High-impedance input requiring negative voltage relative to source to turn on; 100 nA leakage max. |
| Pin 3 (Drain) | Power output (D) | High-voltage power node; electrically and thermally connected to exposed copper pad on bottom of package. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse EAS - eliminates need for external clamping in inductive load switching. |
| P-channel enhancement mode | VGS(th) = -2.0 to -4.0 V - enables direct interface with isolated negative-bias gate drivers in high-side configurations. |
| Low Qgd/Qg ratio | 5.0/13 nC = 38 % - improves Miller immunity and reduces risk of spurious turn-on during high dV/dt transitions. |
| Fast body diode recovery | trr = 170–260 ns - minimizes commutation loss and ringing in synchronous rectifier or freewheeling paths. |
| DPAK thermal efficiency | RthJC = 2.5 °C/W - supports >40 W sustained power dissipation with moderate heatsinking in PCB-mounted designs. |
Applications
| Industrial Motor Control | Offline SMPS Hold-Up |
|---|---|
|
Use Scenario: High-side switching of 24–48 V DC motors in PLC I/O modules with regenerative braking. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high enable switch controlling motor phase voltage; handles bidirectional current via body diode during decay. Use Value: Avalanche rating absorbs inductive kickback without snubbers; 7.0 Ω RDS(on) limits conduction loss to <1.5 W at 1.1 A motor stall current. |
Use Scenario: Backup hold-up switch maintaining 12 V rail during AC mains interruption in telecom power supplies. IC Role / Device Role / Timing Role: High-voltage P-channel switch isolating main DC bus from backup capacitor bank; activated only during outage. Use Value: -400 V VDS withstands full rectified 230 V AC surge; low IDSS (<100 μA) prevents capacitor self-discharge over hours. |
| High-Voltage DC-DC Converter | AC-DC Flyback Snubber |
|
Use Scenario: Primary-side switch in 400 V input, 24 V output isolated flyback converter for industrial sensors. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz; body diode conducts during MOSFET off-time in discontinuous conduction mode. Use Value: 13 nC total gate charge enables efficient drive with low-power gate transformer; 24 ns fall time reduces switching loss by ~18 % vs. legacy equivalents. |
Use Scenario: Clamping switch in RCD snubber network across flyback transformer primary winding. IC Role / Device Role / Timing Role: Fast-turning P-channel switch absorbing leakage inductance energy during MOSFET turn-off edge. Use Value: 92 mJ EAS sustains repeated 30 mJ snubber pulses without degradation; -24 V/ns dV/dt rating prevents false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9310PbF | Same silicon die, identical VDS, RDS(on), Qg, and package; Pb-containing termination (non-GE3). | No functional difference; restricted in RoHS-compliant production due to lead content. | Select IRFR9310PbF only if legacy compliance or non-RoHS assembly is required. |
| STP4NK40ZFP | Zener-protected N-channel device; +400 V VDS, 3.5 Ω RDS(on), but requires high-side gate driver with level shift. | Not directly substitutable: N-channel topology demands bootstrap or isolated gate drive; higher conduction efficiency but added complexity. | Choose STP4NK40ZFP only when redesign permits N-channel layout and driver changes for lower RDS(on). |
Compared with IRFR9310PbF, SiHFR9310-GE3 offers identical electrical performance with Pb-free/halogen-free compliance; versus STP4NK40ZFP, it avoids gate-drive complexity but trades higher on-resistance for simpler high-side integration.
Availability
SiHFR9310-GE3 is available at Aetrix Electronics and suitable for industrial motor control, offline SMPS hold-up, and high-voltage DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SiHFR9310-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage performance.
The SiHFR9310-GE3 belongs to Vishay's high-voltage P-channel power MOSFET product line, engineered for robust operation in industrial, telecom, and automotive auxiliary systems where avalanche tolerance and thermal stability are mandatory.
FAQ
What is the maximum continuous drain current rating for SiHFR9310-GE3 at 100 °C case temperature?
The SiHFR9310-GE3 supports -1.1 A continuous drain current at TC = 100 °C, derated linearly from -1.8 A at 25 °C using the specified 0.40 W/°C derating factor. This reflects thermal limitation rather than silicon current capacity, and actual usable current depends on PCB copper area and heatsinking. The SiHFR9310-GE3 must be mounted on ≥1"² FR-4 PCB per Vishay's thermal test condition to achieve this rating.
Does SiHFR9310-GE3 support logic-level gate drive?
No, SiHFR9310-GE3 is not a logic-level MOSFET. Its gate-source threshold voltage ranges from -2.0 V to -4.0 V, and full enhancement (RDS(on) = 7.0 Ω) requires VGS = -10 V. Driving it with 0/+5 V logic signals will not turn it on reliably. The SiHFR9310-GE3 requires a dedicated negative gate driver or level-shifting circuit to achieve specified on-state performance.
Can SiHFR9310-GE3 replace IRFR9310PbF in an existing design?
Yes - SiHFR9310-GE3 is a direct drop-in replacement for IRFR9310PbF in terms of pinout, package (DPAK), and all electrical specifications including VDS, RDS(on), Qg, and avalanche rating. The only difference is the GE3 suffix indicating Pb-free and halogen-free construction. No layout or schematic changes are needed when migrating from IRFR9310PbF to SiHFR9310-GE3.
What is the body diode forward voltage of SiHFR9310-GE3 at -1.1 A and 25 °C?
The body diode forward voltage (VSD) of SiHFR9310-GE3 is -4.0 V maximum at IS = -1.1 A and TJ = 25 °C with VGS = 0 V. This relatively high drop is typical for high-voltage P-channel devices and must be accounted for in freewheeling path loss calculations. The SiHFR9310-GE3 body diode is not intended for continuous conduction but for transient recovery and clamping.
Is SiHFR9310-GE3 suitable for use in automotive applications?
The SiHFR9310-GE3 is not AEC-Q101 qualified and is not recommended for automotive powertrain or safety-critical systems. While it meets industrial temperature range (-55 to +150 °C) and has robust avalanche performance, Vishay does not specify automotive-grade screening, PPAP documentation, or zero-defect manufacturing for the SiHFR9310-GE3. For automotive use, consult Vishay's AEC-Q101-qualified P-channel alternatives.
SIHFR9310-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR9310-GE3 FAQ
1.How can I place an order for SIHFR9310-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR9310-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR9310-GE3 reliable?
The price and inventory of SIHFR9310-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR9310-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR9310-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR9310-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR9310-GE3?
SIHFR9310-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR9310-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR9310-GE3?
For technical support, including SIHFR9310-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR9310-GE3 requirements.
6.How does Aetrix verify that SIHFR9310-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR9310-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR9310-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR9310-GE3?
All SIHFR9310-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR9310-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR9310-GE3 part is unused and in its original packaging.
Return procedure for SIHFR9310-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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