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Vishay Siliconix SIHFR9310TR-GE3
- Part No.:
- SIHFR9310TR-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SIHFR9310TR-GE3.pdf
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,638
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Product details
Overview
SIHFR9310TR-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω RDS(on) at VGS = -10 V, and -1.8 A continuous drain current at TC = 25 °C. It delivers fully avalanche-rated ruggedness and fast switching for high-voltage DC-DC converters and industrial motor control circuits.
For engineers reviewing the SIHFR9310TR-GE3 datasheet, SIHFR9310TR-GE3 pinout, SIHFR9310TR-GE3 application, or SIHFR9310TR-GE3 equivalent, key selection criteria include its -400 V blocking capability, low gate charge (13 nC), body diode reverse recovery time (170–260 ns), thermal resistance (RthJC = 2.5 °C/W), and DPAK-compatible PCB layout requirements.
Technical Context
This device uses Vishay's third-generation high-voltage silicon process to achieve low on-resistance per die area while maintaining robust avalanche performance. Its P-channel topology enables high-side switching without level-shifting circuitry in offline power supplies and battery protection systems.
The MOSFET features a fully rated unclamped inductive switching capability (EAS = 92 mJ), integrated body diode with controlled reverse recovery (Qrr = 640–960 nC), and gate threshold voltage range of -2.0 V to -4.0 V - supporting both standard (-10 V) and logic-level (-5 V) drive configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -400 V - supports primary-side switching in 380 V DC bus and 230 V AC rectified applications |
| RDS(on) | 7.0 Ω @ VGS = -10 V - determines conduction loss in high-side switch topologies |
| Qg | 13 nC - defines gate drive power requirement and switching speed in hard-switched converters |
| ID (cont.) | -1.8 A @ TC = 25 °C - sets maximum steady-state current handling with heatsink |
| EAS | 92 mJ - enables reliable operation under inductive load turn-off without external snubbers |
| RthJC | 2.5 °C/W - allows direct thermal path to PCB copper or heatsink for power dissipation up to 50 W |
| trr | 170–260 ns - impacts switching loss and EMI in flyback and resonant converters |
Pinout & Package
SIHFR9310TR-GE3 is housed in a DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package complies with JEDEC outline TO-252AA and supports vapor-phase, infrared, or wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to load return or ground in high-side configuration |
| Pin 2 (Gate) | Control input (G) | Receives negative gate voltage relative to source to turn on; requires -10 V for full enhancement |
| Pin 3 (Drain) | High-voltage output (D) | Exposed metal pad on bottom surface; electrically and thermally connected to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 92 mJ single-pulse energy withstand without failure - eliminates need for external clamping in inductive loads |
| P-channel high-side switch | No bootstrap or level-shifter required - simplifies gate drive design in offline SMPS and battery disconnect |
| Low Qgd/Qg ratio | 5.0/13 = 38% - improves hard-switching efficiency and reduces Miller-induced shoot-through risk |
| Controlled body diode recovery | Qrr = 640–960 nC with dV/dt rating of -24 V/ns - limits voltage overshoot during commutation |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard - suitable for automotive and industrial end equipment |
Applications
| Industrial Motor Control | Offline AC-DC Power Supplies |
|---|---|
|
Use Scenario: High-side switching in 3-phase inverter half-bridge legs for 24–48 V DC-fed brushless motors. IC Role / Device Role / Timing Role: P-channel MOSFET providing isolated high-side switching with no gate driver level shift. Use Value: Enables compact, cost-effective motor control using single-supply gate drivers and reduces BOM count by eliminating bootstrap capacitors. |
Use Scenario: Primary-side active clamp or auxiliary supply switch in 230 V AC-input flyback converters. IC Role / Device Role / Timing Role: High-voltage P-channel switch managing startup sequencing and overvoltage protection. Use Value: Withstands 380 V DC bus transients and provides fast, controlled turn-off during fault conditions via its 92 mJ avalanche rating. |
| Battery Management Systems | Telecom DC-DC Converters |
|
Use Scenario: Reverse polarity and overvoltage protection in 48 V telecom battery backup modules. IC Role / Device Role / Timing Role: High-side protection switch placed between battery terminals and system load. Use Value: Blocks reverse current flow and sustains -400 V transients during hot-swap events without latch-up or degradation. |
Use Scenario: Isolated bias supply switching in 48 V input telecom rectifiers feeding point-of-load regulators. IC Role / Device Role / Timing Role: Synchronous rectifier control element in auxiliary winding-driven gate drive circuits. Use Value: Low RDS(on) (7.0 Ω) minimizes conduction loss in low-duty-cycle auxiliary supplies, improving overall converter efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR9310TRPbF | Same die, Pb-containing version; identical RDS(on), Qg, and avalanche rating | Not compliant with RoHS or REACH; restricted in EU/China markets | Select only if legacy compliance or cost sensitivity outweighs environmental requirements |
| SiHFU9310-GE3 | IPAK (TO-251) through-hole variant; same electrical specs but higher RthJA (110 °C/W vs. 50 °C/W PCB mount) | Suitable for prototyping or low-volume through-hole assembly; less efficient thermal transfer than DPAK | Choose when manual assembly or board-level reliability testing requires leaded mounting |
Compared with SIHFR9310TR-GE3, IRFR9310TRPbF offers identical performance but lacks RoHS compliance, while SiHFU9310-GE3 trades surface-mount thermal efficiency for through-hole mechanical robustness - making SIHFR9310TR-GE3 optimal for volume production of thermally constrained industrial power modules.
Availability
SIHFR9310TR-GE3 is available at Aetrix Electronics and suitable for industrial motor control, offline AC-DC power supplies, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SIHFR9310TR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.
The SIHFR9310TR-GE3 belongs to Vishay's high-voltage P-channel power MOSFET family, engineered for rugged high-side switching in space-constrained, high-efficiency power conversion systems where avalanche tolerance and thermal performance are critical.
FAQ
What is the maximum junction temperature for SIHFR9310TR-GE3?
The SIHFR9310TR-GE3 has an operating junction temperature range of -55 °C to +150 °C. This upper limit must not be exceeded during continuous operation or transient events. Derating curves in the datasheet show that continuous drain current drops to -1.1 A at TC = 100 °C, and thermal design must ensure RthJC × PD + TC ≤ 150 °C. SIHFR9310TR-GE3 thermal performance is validated using JEDEC-standard PCB mount conditions.
Does SIHFR9310TR-GE3 require a negative gate drive voltage?
Yes, SIHFR9310TR-GE3 is a P-channel MOSFET and requires a gate voltage negative relative to the source to turn on. Full enhancement occurs at VGS = -10 V, with threshold range specified from -2.0 V to -4.0 V. Driving the gate to -5 V may yield partial conduction, but -10 V ensures minimum RDS(on) of 7.0 Ω. SIHFR9310TR-GE3 gate drive must avoid exceeding ±20 V absolute maximum rating.
Can SIHFR9310TR-GE3 replace N-channel MOSFETs in existing designs?
No, SIHFR9310TR-GE3 cannot directly replace N-channel MOSFETs due to opposite channel polarity, gate drive polarity, and pinout orientation. Substituting it would require redesigning gate drive circuitry, reversing PCB layout connections, and revalidating timing and protection schemes. SIHFR9310TR-GE3 is intended for high-side P-channel roles where N-channel alternatives demand complex level-shifting - not as a drop-in N-channel replacement.
What is the body diode forward voltage of SIHFR9310TR-GE3?
The body diode forward voltage (VSD) of SIHFR9310TR-GE3 is -4.0 V maximum at TJ = 25 °C and IS = -1.1 A with VGS = 0 V. This relatively high forward drop reflects its high-voltage P-channel construction and impacts conduction loss during freewheeling. SIHFR9310TR-GE3 body diode recovery time (170–260 ns) and charge (640–960 nC) are characterized for use in synchronous rectification or clamp circuits.
Is SIHFR9310TR-GE3 suitable for avalanche energy testing per JEDEC JESD24-1?
Yes, SIHFR9310TR-GE3 is fully avalanche rated with single-pulse energy EAS = 92 mJ and repetitive energy EAR = 5.0 mJ, tested per JEDEC JESD24-1 methodology. Test conditions include L = 57 mH, Rg = 25 Ω, and IAS = -1.8 A. SIHFR9310TR-GE3 avalanche capability is guaranteed across its full temperature range and does not require derating for pulse width within datasheet limits.
SIHFR9310TR-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 400 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
SIHFR9310TR-GE3 FAQ
1.How can I place an order for SIHFR9310TR-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFR9310TR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFR9310TR-GE3 reliable?
The price and inventory of SIHFR9310TR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR9310TR-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFR9310TR-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR9310TR-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFR9310TR-GE3?
SIHFR9310TR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFR9310TR-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFR9310TR-GE3?
For technical support, including SIHFR9310TR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR9310TR-GE3 requirements.
6.How does Aetrix verify that SIHFR9310TR-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFR9310TR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR9310TR-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFR9310TR-GE3?
All SIHFR9310TR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR9310TR-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFR9310TR-GE3 part is unused and in its original packaging.
Return procedure for SIHFR9310TR-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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