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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFR9310TRR-GE3

Name: SIHFR9310TRR-GE3
Brand: Vishay Siliconix
SKU: SIHFR9310TRR-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFR9310TRR-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFR9310TRR-GE3.pdf

Description:: MOSFET P-CHANNEL 400V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHFR9310TRR-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for -400 V drain-source voltage, 7.0 Ω R_DS(on) at V_GS = -10 V, and -1.8 A continuous drain current at T_C = 25 °C. It delivers fully avalanche-rated ruggedness and fast switching for high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the SIHFR9310TRR-GE3 datasheet, SIHFR9310TRR-GE3 pinout, SIHFR9310TRR-GE3 application, or SIHFR9310TRR-GE3 equivalent, key selection criteria include its -400 V blocking capability, low gate charge (13 nC), body diode reverse recovery performance (trr = 170–260 ns), thermal resistance (R_thJC = 2.5 °C/W), and DPAK footprint compatibility with standard PCB layout practices.

Technical Context

This device employs third-generation silicon process technology to achieve low on-resistance per die area while maintaining high-voltage integrity. Its P-channel architecture enables high-side switching without level-shifting circuitry in buck or flyback topologies.

The MOSFET features an integral fast-recovery body diode (V_SD = -4.0 V at I_S = -1.1 A, trr = 170–260 ns) and is fully rated for unclamped inductive switching (E_AS = 92 mJ), supporting robust operation in relay driving and solenoid control where inductive kickback is present.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-400 V - Supports high-voltage DC bus isolation up to 400 V in industrial power supplies and battery management systems.
R_DS(on)	7.0 Ω @ V_GS = -10 V - Enables efficient conduction with <1.4 W conduction loss at -1.1 A, suitable for low-duty-cycle high-voltage switching.
Q_g	13 nC - Low total gate charge reduces drive power requirements and supports >100 kHz switching in isolated gate driver designs.
I_D (cont.)	-1.8 A @ T_C = 25 °C - Specifies maximum continuous current under ideal heatsinking; derates linearly to -1.1 A at 100 °C case temperature.
E_AS	92 mJ - Single-pulse avalanche energy rating ensures survivability during transient overvoltage events without external snubbers.
R_thJC	2.5 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for sustained power dissipation up to 50 W.
trr	170–260 ns - Body diode reverse recovery time impacts commutation losses in synchronous rectification and bidirectional power flow applications.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. Standard three-terminal configuration optimized for high-voltage PCB layout and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal (connected to internal die substrate)	Exposed metal pad on bottom of package - must be soldered to large copper pour for thermal management and low-inductance high-current return path.
Gate (G)	Control electrode for channel formation	High-impedance input requiring <±100 nA leakage; sensitive to ESD - requires gate resistor (21 Ω typical) and clamping for reliable turn-on/turn-off timing.
Source (S)	Reference terminal for gate drive and current return	Connected to system ground or floating reference; defines V_GS bias - source inductance (L_S = 7.5 nH) affects switching waveform ringing and dI/dt control.

Key Features

Feature	Design Value
Fully avalanche rated	92 mJ single-pulse E_AS and 5.0 mJ repetitive EAR enable operation in unclamped inductive loads without external protection components.
P-channel enhancement mode	Enables high-side switch configuration with simple gate drive referenced to load supply rail - eliminates need for bootstrap or isolated gate drivers.
Fast switching with low Q_g	13 nC total gate charge and 11 ns turn-on delay support clean edge transitions and reduced switching losses in high-frequency SMPS designs.
Integral fast-recovery body diode	trr = 170–260 ns and Q_rr = 640–960 nC allow controlled commutation in flyback and resonant converters without external diode substitution.
DPAK (TO-252) surface-mount	Standardized footprint compatible with IPC-7351B land patterns; supports vapor-phase and IR reflow with peak temperature ≤300 °C for 10 s.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules with inductive load switching. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor direction and braking via PWM duty cycle modulation. Use Value: -400 V V_DS rating provides margin against back-EMF spikes; fully rated avalanche capability prevents failure during sudden load disconnection.	Use Scenario: Primary-side high-voltage switch in isolated flyback converters powering industrial sensors and field transmitters. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with zero-voltage switching assistance from body diode recovery characteristics. Use Value: Low Q_g (13 nC) and fast tr/tf (10/24 ns) minimize gate drive losses; R_thJC = 2.5 °C/W allows direct heatsink mounting for stable thermal performance.
Relay and Solenoid Drivers	Battery Management Systems
Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels and building automation systems. IC Role / Device Role / Timing Role: High-side switch managing 24–125 V AC/DC coil loads with integrated flyback energy handling. Use Value: 92 mJ E_AS absorbs inductive energy during coil de-energization; -400 V rating accommodates worst-case line transients and surge standards.	Use Scenario: Cell balancing or pre-charge/disconnect switch in 48–300 V lithium-ion battery packs for energy storage and EV auxiliary systems. IC Role / Device Role / Timing Role: High-voltage isolation switch enabling safe pack connection/disconnection and fault current interruption. Use Value: -400 V V_DS and -1.8 A I_D support Class II insulation requirements; lead (Pb)-free and halogen-free construction meets RoHS and REACH compliance mandates.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: Driving 24–48 V brushed DC motors in programmable logic controller (PLC) output modules with inductive load switching.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor direction and braking via PWM duty cycle modulation.

Use Value: -400 V V_DS rating provides margin against back-EMF spikes; fully rated avalanche capability prevents failure during sudden load disconnection.

Use Scenario: Primary-side high-voltage switch in isolated flyback converters powering industrial sensors and field transmitters.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with zero-voltage switching assistance from body diode recovery characteristics.

Use Value: Low Q_g (13 nC) and fast tr/tf (10/24 ns) minimize gate drive losses; R_thJC = 2.5 °C/W allows direct heatsink mounting for stable thermal performance.

Relay and Solenoid Drivers

Battery Management Systems

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels and building automation systems.

IC Role / Device Role / Timing Role: High-side switch managing 24–125 V AC/DC coil loads with integrated flyback energy handling.

Use Value: 92 mJ E_AS absorbs inductive energy during coil de-energization; -400 V rating accommodates worst-case line transients and surge standards.

Use Scenario: Cell balancing or pre-charge/disconnect switch in 48–300 V lithium-ion battery packs for energy storage and EV auxiliary systems.

IC Role / Device Role / Timing Role: High-voltage isolation switch enabling safe pack connection/disconnection and fault current interruption.

Use Value: -400 V V_DS and -1.8 A I_D support Class II insulation requirements; lead (Pb)-free and halogen-free construction meets RoHS and REACH compliance mandates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR9310TRPbF	Same silicon die and DPAK package; Pb-containing termination vs. Pb-free GE3 suffix.	No functional difference in electrical or thermal performance; differs only in RoHS compliance status and solderability profile.	Select IRFR9310TRPbF only if legacy Pb-based assembly processes are used and RoHS exemption applies.
SiHFU9310-GE3	Identical electrical specs but IPAK (TO-251) through-hole package - no exposed drain pad, higher R_thJA (110 °C/W).	Suitable for prototyping or low-volume through-hole boards; not interchangeable without PCB redesign due to different footprint and thermal path.	Choose SiHFU9310-GE3 when manual assembly or board-level reliability testing requires through-hole mounting.

Compared with SIHFR9310TRR-GE3, IRFR9310TRPbF offers identical performance with Pb-based terminations for non-RoHS environments, while SiHFU9310-GE3 provides the same silicon in a through-hole IPAK package-requiring layout changes but enabling easier thermal validation and hand-soldering during development.

Availability

SIHFR9310TRR-GE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, relay/solenoid drivers, and battery management systems requiring stable component supply across extended product lifecycles.

Supply support for SIHFR9310TRR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The SIHFR9310TRR-GE3 belongs to Vishay's high-voltage P-channel power MOSFET family designed for industrial-grade switching applications demanding high breakdown voltage, avalanche robustness, and surface-mount manufacturability.

FAQ

What is the maximum continuous drain current rating for SIHFR9310TRR-GE3 at 100 °C case temperature?

The SIHFR9310TRR-GE3 has a maximum continuous drain current of -1.1 A at T_C = 100 °C, derived from linear derating of its -1.8 A rating at 25 °C using a factor of 0.40 W/°C. This reflects real-world thermal limits when mounted on standard FR-4 PCBs with limited copper area.

Does SIHFR9310TRR-GE3 require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

SIHFR9310TRR-GE3 has a gate threshold voltage range of -2.0 V to -4.0 V and requires -10 V for full enhancement. A standard 3.3 V or 5 V microcontroller GPIO cannot provide sufficient negative gate drive; a dedicated P-channel gate driver or level-shifting circuit is required to ensure reliable turn-on and minimize R_DS(on).

What is the significance of the "TRR" suffix in SIHFR9310TRR-GE3?

The "TRR" suffix in SIHFR9310TRR-GE3 indicates tape-and-reel packaging with 2,000 units per reel, optimized for automated SMT placement. The "GE3" denotes lead (Pb)-free and halogen-free construction compliant with RoHS Directive 2011/65/EU and JEDEC JS709 standards.

How does the body diode performance of SIHFR9310TRR-GE3 impact its use in flyback converter designs?

The SIHFR9310TRR-GE3 body diode exhibits trr = 170–260 ns and Q_rr = 640–960 nC, which directly influences switching losses and EMI during discontinuous conduction mode (DCM) flyback operation. These values allow predictable commutation but necessitate careful snubber design to manage voltage overshoot during diode recovery.

Can SIHFR9310TRR-GE3 be used in parallel configurations to increase current handling?

Parallel operation of SIHFR9310TRR-GE3 devices is not recommended due to positive temperature coefficient of R_DS(on) being insufficient to ensure current sharing - mismatched threshold voltages and layout-induced gate inductance differences cause uneven current distribution and thermal runaway risk without individual gate resistors and matched PCB routing.

SIHFR9310TRR-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 270 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFR9310TRR-GE3 FAQ

1.How can I place an order for SIHFR9310TRR-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFR9310TRR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFR9310TRR-GE3 reliable?

The price and inventory of SIHFR9310TRR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFR9310TRR-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFR9310TRR-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFR9310TRR-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFR9310TRR-GE3?

SIHFR9310TRR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFR9310TRR-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFR9310TRR-GE3?

For technical support, including SIHFR9310TRR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFR9310TRR-GE3 requirements.

6.How does Aetrix verify that SIHFR9310TRR-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFR9310TRR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFR9310TRR-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFR9310TRR-GE3?

All SIHFR9310TRR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFR9310TRR-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFR9310TRR-GE3 part is unused and in its original packaging.

Return procedure for SIHFR9310TRR-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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