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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFRC20TR-GE3

Name: SIHFRC20TR-GE3
Brand: Vishay Siliconix
SKU: SIHFRC20TR-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFRC20TR-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SIHFRC20TR-GE3.pdf

Description:: MOSFET N-CHANNEL 600V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHFRC20TR-GE3 from Vishay Siliconix is a 600 V, 2.0 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 4.4 Ω R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS primary switches, and industrial motor control drivers.

For engineers reviewing the SIHFRC20TR-GE3 datasheet, SIHFRC20TR-GE3 pinout, SIHFRC20TR-GE3 application, or SIHFRC20TR-GE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and direct-mount PCB layout guidance per Vishay's recommended DPAK pad dimensions.

Technical Context

This third-generation silicon power MOSFET employs planar V-groove technology to achieve ruggedized avalanche performance and stable dV/dt immunity up to 3.0 V/ns. Its 600 V V_DS rating and 74 mJ single-pulse avalanche energy support reliable operation in unclamped inductive switching circuits.

The device exhibits low gate charge (Q_g = 18 nC, Q_gd = 8.9 nC) and fast switching times (t_d(on) = 10 ns, t_f = 25 ns), enabling high-frequency operation while maintaining low conduction loss (R_DS(on) = 4.4 Ω) and thermally efficient PCB mounting with R_thJA = 50 °C/W on 1" FR-4 board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V AC-input offline power supplies
R_DS(on)	4.4 Ω @ V_GS = 10 V - enables <2.0 W conduction loss at 2.0 A continuous drain current
Q_g	18 nC - reduces gate drive power requirement in 100–500 kHz SMPS designs
E_AS	74 mJ - ensures robustness against inductive load transients without external snubbers
I_D (T_C = 25 °C)	2.0 A - defines maximum continuous current under heatsink-cooled conditions
t_r/t_f	23 ns / 25 ns - minimizes switching transition losses in hard-switched topologies
V_SD	1.6 V @ I_S = 2.0 A - sets forward voltage drop of integrated body diode during synchronous rectification or freewheeling
R_thJC	3.0 °C/W - confirms efficient heat transfer from die to DPAK drain tab for thermal interface design

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration optimized for high-current, high-voltage PCB routing and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive to fully enhance channel; threshold voltage 2.0–4.0 V enables compatibility with standard PWM controllers
D (Drain)	High-side power output	Connected to exposed copper tab; carries full load current and dissipates heat directly into PCB copper pour or heatsink
S (Source)	Reference node	Common return path for gate drive and load current; establishes local ground reference for driver IC placement

Key Features

Feature	Design Value
Dynamic dV/dt rating	3.0 V/ns - prevents false turn-on during high-slew-rate voltage transients in bridge configurations
Repetitive avalanche rated	2.0 A I_AR, 4.2 mJ E_AR - allows safe operation under repeated inductive energy dump without degradation
Fast switching	t_d(on) = 10 ns, t_f = 25 ns - reduces overlap loss and improves efficiency in high-frequency converters
Surface-mount (DPAK)	Compatible with vapor-phase, infrared, and wave soldering - supports high-volume SMT manufacturing
Low Q_gd/Q_g ratio	8.9/18 = 49% - enhances Miller immunity and enables stable operation with minimal gate resistance
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709E - compliant for industrial and consumer end equipment

Applications

AC-DC Adapter Primary Switch	Industrial Motor Drive Half-Bridge
Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz with active clamp reset. IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer from bulk capacitor to transformer primary. Use Value: 600 V rating withstands reflected output voltage plus leakage spike; 4.4 Ω R_DS(on) limits conduction loss to <1.8 W at full load.	Use Scenario: 24 V DC bus driving 100 W BLDC motor via 3-phase inverter with discrete gate drivers. IC Role / Device Role / Timing Role: Upper-leg N-channel MOSFET in half-bridge leg, switched by isolated gate driver. Use Value: Repetitive avalanche rating absorbs shoot-through energy; 3.0 V/ns dV/dt immunity prevents spurious turn-on during cross-conduction events.
LED Driver Constant-Current Regulator	Telecom DC-DC Intermediate Bus Converter
Use Scenario: 48 V input, 36 V/0.7 A constant-current LED driver using buck topology with analog dimming. IC Role / Device Role / Timing Role: Main power switch regulating average inductor current through duty-cycle control. Use Value: Low Q_g (18 nC) enables clean gate drive with low-power controller; 1.6 V body diode V_SD minimizes freewheeling loss during off-time.	Use Scenario: 48 V to 12 V non-isolated intermediate bus converter in telecom shelf powering multiple point-of-load regulators. IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter secondary side (when used in dual-MOSFET configuration). Use Value: Fast trr (290–580 ns) and low Q_rr (0.67–1.3 μC) reduce reverse recovery loss and EMI generation at 300 kHz switching frequency.

AC-DC Adapter Primary Switch

Industrial Motor Drive Half-Bridge

Use Scenario: 65 W universal-input offline flyback converter operating at 65 kHz with active clamp reset.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer from bulk capacitor to transformer primary.

Use Value: 600 V rating withstands reflected output voltage plus leakage spike; 4.4 Ω R_DS(on) limits conduction loss to <1.8 W at full load.

Use Scenario: 24 V DC bus driving 100 W BLDC motor via 3-phase inverter with discrete gate drivers.

IC Role / Device Role / Timing Role: Upper-leg N-channel MOSFET in half-bridge leg, switched by isolated gate driver.

Use Value: Repetitive avalanche rating absorbs shoot-through energy; 3.0 V/ns dV/dt immunity prevents spurious turn-on during cross-conduction events.

LED Driver Constant-Current Regulator

Telecom DC-DC Intermediate Bus Converter

Use Scenario: 48 V input, 36 V/0.7 A constant-current LED driver using buck topology with analog dimming.

IC Role / Device Role / Timing Role: Main power switch regulating average inductor current through duty-cycle control.

Use Value: Low Q_g (18 nC) enables clean gate drive with low-power controller; 1.6 V body diode V_SD minimizes freewheeling loss during off-time.

Use Scenario: 48 V to 12 V non-isolated intermediate bus converter in telecom shelf powering multiple point-of-load regulators.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter secondary side (when used in dual-MOSFET configuration).

Use Value: Fast trr (290–580 ns) and low Q_rr (0.67–1.3 μC) reduce reverse recovery loss and EMI generation at 300 kHz switching frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFRC20TRPbF	Same silicon die and DPAK package; Pb-containing termination vs. Pb-free GE3 marking	No functional difference; not suitable for RoHS-compliant designs requiring lead-free finish	Select IRFRC20TRPbF only if legacy Pb-based assembly process is mandated and compliance documentation permits
STP6NK60ZFP	600 V, 6 A, 1.2 Ω R_DS(on), TO-220FP package; higher current, lower R_DS(on), but through-hole mount	Requires PCB through-hole routing and manual or wave soldering; unsuitable for pure SMT lines	Choose STP6NK60ZFP when higher current capability and thermal margin are needed and board assembly supports through-hole components

Compared with SIHFRC20TR-GE3, IRFRC20TRPbF offers identical electrical performance but lacks RoHS compliance, while STP6NK60ZFP provides superior conduction efficiency and current handling at the cost of surface-mount compatibility and increased footprint.

Availability

SIHFRC20TR-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor drives, LED drivers, and telecom DC-DC converters requiring stable component supply across production lifecycles.

Supply support for SIHFRC20TR-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The SIHFRC20TR-GE3 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for demanding offline power conversion and industrial motor control where avalanche robustness and surface-mount scalability are critical.

FAQ

What is the maximum continuous drain current for SIHFRC20TR-GE3 at 100 °C case temperature?

The SIHFRC20TR-GE3 supports 1.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB copper area and ambient conditions in the final design.

Does SIHFRC20TR-GE3 have a built-in body diode, and what are its key parameters?

Yes, SIHFRC20TR-GE3 integrates a parasitic body diode with V_SD = 1.6 V at I_S = 2.0 A and T_J = 25 °C, reverse recovery time t_rr = 290–580 ns, and Q_rr = 0.67–1.3 μC. These values are measured under standardized conditions (I_F = 2.0 A, dI/dt = 100 A/μs) and define freewheeling behavior in buck or bridge topologies.

What is the gate threshold voltage range for SIHFRC20TR-GE3, and how does it affect drive requirements?

The gate-source threshold voltage V_GS(th) for SIHFRC20TR-GE3 is specified from 2.0 V to 4.0 V at I_D = 250 μA. This range confirms compatibility with standard 5 V and 10 V gate drivers, but full enhancement requires ≥10 V to achieve the rated 4.4 Ω R_DS(on); operation below 5 V may result in significantly higher on-resistance and thermal stress.

Can SIHFRC20TR-GE3 be paralleled with identical units, and what design considerations apply?

Yes, SIHFRC20TR-GE3 is designed for ease of paralleling due to positive temperature coefficient of R_DS(on), which promotes current sharing. Key considerations include matched gate drive impedance, symmetrical PCB layout, and thermal coupling-Vishay recommends individual 10–25 Ω gate resistors and shared source inductance minimization to avoid oscillation in the SIHFRC20TR-GE3 array.

What is the recommended minimum PCB pad layout for SIHFRC20TR-GE3 in DPAK (TO-252) package?

Vishay specifies minimum DPAK pads per Application Note 826: drain pad 0.224" × 0.420" (5.69 mm × 10.67 mm), source pad 0.087" × 0.243" (2.20 mm × 6.18 mm), and gate pad 0.055" × 0.180" (1.40 mm × 4.57 mm). Thermal relief and copper pour under the drain tab are essential to achieve the rated 2.5 W PCB-mount power dissipation for SIHFRC20TR-GE3.

SIHFRC20TR-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SIHFRC20TR-GE3 FAQ

1.How can I place an order for SIHFRC20TR-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFRC20TR-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFRC20TR-GE3 reliable?

The price and inventory of SIHFRC20TR-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFRC20TR-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFRC20TR-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFRC20TR-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFRC20TR-GE3?

SIHFRC20TR-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFRC20TR-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFRC20TR-GE3?

For technical support, including SIHFRC20TR-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFRC20TR-GE3 requirements.

6.How does Aetrix verify that SIHFRC20TR-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFRC20TR-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFRC20TR-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFRC20TR-GE3?

All SIHFRC20TR-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFRC20TR-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFRC20TR-GE3 part is unused and in its original packaging.

Return procedure for SIHFRC20TR-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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