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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFS9N60A-GE3

Name: SIHFS9N60A-GE3
Brand: Vishay Siliconix
SKU: SIHFS9N60A-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFS9N60A-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHFS9N60A-GE3.pdf

Description:: MOSFET N-CH 600V 9.2A TO263

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Product details

Overview

SIHFS9N60A-GE3 from Vishay Siliconix is a 600 V, 9.2 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.75 Ω at V_GS = 10 V, Q_g = 49 nC, and 290 mJ single-pulse avalanche energy - designed for high-voltage switching in offline SMPS main switch and active-clamped forward topologies.

For engineers reviewing the SIHFS9N60A-GE3 datasheet, SIHFS9N60A-GE3 pinout, SIHFS9N60A-GE3 application, or SIHFS9N60A-GE3 equivalent, key selection criteria include its 600 V V_DS, 0.75 Ω on-resistance at 10 V gate drive, 49 nC total gate charge, robust 5.0 V/ns peak diode recovery dV/dt rating, and D2PAK thermal performance with R_thJC = 0.75 °C/W.

Technical Context

This device employs planar stripe silicon technology optimized for high-voltage power switching, with fully characterized avalanche capability and dynamic dV/dt ruggedness validated per unclamped inductive test conditions (L = 6.8 mH, I_AS = 9.2 A). Its gate threshold voltage range (2.0–4.0 V) ensures reliable turn-on under industrial supply variations.

The MOSFET integrates a fast-recovery body diode (t_rr = 530–800 ns, Q_rr = 3.0–4.4 μC) and exhibits low C_oss eff. = 96 pF across 0–480 V, supporting efficient hard-switching operation in 50–100 kHz SMPS designs while maintaining stable SOA up to T_C = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC mains-derived DC bus with ≥50 % safety margin in offline converters
R_DS(on) max	0.75 Ω @ V_GS = 10 V - enables ≤43 W conduction loss at 9.2 A continuous drain current
Q_g max	49 nC - determines gate driver current requirement (~5 mA avg. for 100 kHz switching with 10 V swing)
E_AS	290 mJ - provides single-pulse avalanche robustness during transient overvoltage events without failure
t_r/t_f	25 ns / 22 ns - supports fast switching transitions with reduced switching losses in hard-switched topologies
T_J range	−55 to +150 °C - ensures operation in industrial ambient environments with derated power above 25 °C case temperature
R_thJC	0.75 °C/W - allows 170 W dissipation at ΔT = 127.5 °C (150 °C − 22.5 °C), enabling high-power density heatsink design

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); lead (Pb)-free and halogen-free construction per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 0–10 V logic-level signal; 13 nC Q_gs defines Miller plateau duration during turn-on/turn-off
D (Drain)	High-side power terminal	Connected to PCB thermal pad; carries full load current and withstands 600 V blocking; electrically tied to heatsink
S (Source)	Reference and return path	Provides ground reference for gate drive; source inductance directly impacts switching speed and ringing

Key Features

Feature	Design Value
Low Q_g (49 nC)	Reduces gate driver power consumption and simplifies drive circuit design for 5–15 V logic-compatible controllers
Enhanced dV/dt ruggedness (5.0 V/ns)	Prevents false turn-on during high-speed switching in noisy high-voltage node environments
Characterized avalanche energy (290 mJ)	Enables reliable operation without external snubbers in inductive load switching applications
Low C_oss eff. (96 pF)	Minimizes capacitive switching loss and improves efficiency in 50–200 kHz hard-switched converters
Body diode t_rr (530–800 ns)	Reduces reverse recovery loss and EMI generation compared to standard MOSFETs in freewheeling paths

Applications

Server PSU Main Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 1 kW+ server power supply operating from 380 V DC bus in active-clamped forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switching element handling 9.2 A continuous current at 100 kHz with 400 V V_DS stress. Use Value: 0.75 Ω R_DS(on) minimizes conduction loss; 290 mJ E_AS absorbs clamp circuit transients without derating.	Use Scenario: Bidirectional DC-AC inverter stage in 3 kVA industrial uninterruptible power supply with 480 V DC link. IC Role / Device Role / Timing Role: Low-side switching device in H-bridge leg, conducting 9.2 A RMS with fast 22 ns fall time for clean zero-crossing control. Use Value: 5.0 V/ns dV/dt rating prevents shoot-through during high dv/dt commutation; body diode Q_rr = 3.0–4.4 μC reduces inverter switching loss.
EV Charger Auxiliary SMPS	Telecom Rectifier Module
Use Scenario: 300 W auxiliary power supply in onboard EV charger, converting 800 V DC battery voltage to 12 V control rail. IC Role / Device Role / Timing Role: Main switch in flyback converter operating at 65 kHz with 600 V V_DS rating and 9.2 A peak current. Use Value: Fully characterized C_iss/C_oss/C_rss enables accurate snubber design; 150 °C T_J rating supports sealed enclosure thermal management.	Use Scenario: 1.5 kW telecom rectifier module converting 230 V AC to −48 V DC using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in LLC resonant converter with 9.2 A average output current. Use Value: Low Q_gd/Q_gs ratio (20/13) improves gate drive timing margin; D2PAK package enables direct heatsink mounting for 170 W dissipation.

Server PSU Main Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 1 kW+ server power supply operating from 380 V DC bus in active-clamped forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switching element handling 9.2 A continuous current at 100 kHz with 400 V V_DS stress.

Use Value: 0.75 Ω R_DS(on) minimizes conduction loss; 290 mJ E_AS absorbs clamp circuit transients without derating.

Use Scenario: Bidirectional DC-AC inverter stage in 3 kVA industrial uninterruptible power supply with 480 V DC link.

IC Role / Device Role / Timing Role: Low-side switching device in H-bridge leg, conducting 9.2 A RMS with fast 22 ns fall time for clean zero-crossing control.

Use Value: 5.0 V/ns dV/dt rating prevents shoot-through during high dv/dt commutation; body diode Q_rr = 3.0–4.4 μC reduces inverter switching loss.

EV Charger Auxiliary SMPS

Telecom Rectifier Module

Use Scenario: 300 W auxiliary power supply in onboard EV charger, converting 800 V DC battery voltage to 12 V control rail.

IC Role / Device Role / Timing Role: Main switch in flyback converter operating at 65 kHz with 600 V V_DS rating and 9.2 A peak current.

Use Value: Fully characterized C_iss/C_oss/C_rss enables accurate snubber design; 150 °C T_J rating supports sealed enclosure thermal management.

Use Scenario: 1.5 kW telecom rectifier module converting 230 V AC to −48 V DC using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in LLC resonant converter with 9.2 A average output current.

Use Value: Low Q_gd/Q_gs ratio (20/13) improves gate drive timing margin; D2PAK package enables direct heatsink mounting for 170 W dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK60ZFP	600 V, 8.5 A, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220FP package	Lower thermal resistance to ambient but no exposed drain pad; requires insulated mounting in high-voltage isolation designs	Preferred where through-hole assembly and lower gate charge are prioritized over surface-mount thermal performance
IXFH9N60P	600 V, 9 A, R_DS(on) = 0.75 Ω, Q_g = 52 nC, TO-247 package	Higher R_thJC (0.85 °C/W) and larger footprint; rated for higher repetitive avalanche (I_AR = 10 A)	Selected when mechanical robustness and higher surge current tolerance outweigh D2PAK's space and thermal advantages

Compared with STP9NK60ZFP and IXFH9N60P, SIHFS9N60A-GE3 delivers superior thermal performance via D2PAK's low 0.75 °C/W junction-to-case resistance and optimized surface-mount layout, while matching R_DS(on) and exceeding both alternatives in single-pulse avalanche energy (290 mJ vs. 220 mJ and 250 mJ).

Availability

SIHFS9N60A-GE3 is available at Aetrix Electronics and suitable for server power supplies, industrial UPS systems, EV charging auxiliary SMPS, and telecom rectifier modules requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for SIHFS9N60A-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The SIHFS9N60A-GE3 belongs to Vishay's high-voltage Power MOSFET product line, engineered for rugged offline switching in industrial, computing, and renewable energy systems where avalanche capability and thermal stability are critical.

FAQ

What is the maximum continuous drain current for SIHFS9N60A-GE3 at 100 °C case temperature?

The SIHFS9N60A-GE3 supports 5.8 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and ensures safe operation within the 150 °C maximum junction temperature. The full 9.2 A rating applies only at T_C = 25 °C.

Does SIHFS9N60A-GE3 have a fully characterized body diode for synchronous rectification?

Yes, SIHFS9N60A-GE3 includes fully characterized body diode parameters: V_SD = 1.5 V at I_S = 9.2 A and T_J = 25 °C, t_rr = 530–800 ns, and Q_rr = 3.0–4.4 μC. These values are measured under controlled conditions (dI/dt = 100 A/μs) and enable accurate loss modeling in freewheeling or synchronous rectifier configurations.

What is the gate threshold voltage range for SIHFS9N60A-GE3, and how does it affect drive compatibility?

The SIHFS9N60A-GE3 has a gate threshold voltage range of 2.0–4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding unintended conduction from noise. The wide V_GS(th) distribution supports robust operation across temperature and process variation without requiring precision biasing.

Can SIHFS9N60A-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHFS9N60A-GE3 is fully characterized for unclamped inductive switching with a rated single-pulse avalanche energy (E_AS) of 290 mJ at T_J = 25 °C, L = 6.8 mH, and I_AS = 9.2 A. This capability allows safe operation during transient overcurrent events without external protection components in properly designed circuits.

What package type and thermal characteristics define the SIHFS9N60A-GE3 mechanical interface?

The SIHFS9N60A-GE3 uses the D2PAK (TO-263AB) surface-mount package with an exposed drain pad. Its thermal resistance is R_thJC = 0.75 °C/W (max), enabling 170 W power dissipation at T_C = 25 °C. The package complies with JEDEC TO-263AB outlines and supports reflow soldering per Vishay's recommended profile.

SIHFS9N60A-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHFS9N60A-GE3 FAQ

1.How can I place an order for SIHFS9N60A-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFS9N60A-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFS9N60A-GE3 reliable?

The price and inventory of SIHFS9N60A-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFS9N60A-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFS9N60A-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFS9N60A-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFS9N60A-GE3?

SIHFS9N60A-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFS9N60A-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFS9N60A-GE3?

For technical support, including SIHFS9N60A-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFS9N60A-GE3 requirements.

6.How does Aetrix verify that SIHFS9N60A-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFS9N60A-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFS9N60A-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFS9N60A-GE3?

All SIHFS9N60A-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFS9N60A-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFS9N60A-GE3 part is unused and in its original packaging.

Return procedure for SIHFS9N60A-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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