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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHFU024-GE3

Name: SIHFU024-GE3
Brand: Vishay Siliconix
SKU: SIHFU024-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHFU024-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: SIHFU024-GE3.pdf

Description:: LOGIC MOSFET N-CHANNEL 60V

Quantity:: RFQ Add To RFQ list

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Inventory:7,731

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Product details

Overview

SIHFU024-GE3 from Vishay Siliconix is a 60 V, 14 A N-channel power MOSFET in IPAK (TO-251) through-hole package with 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy-designed for DC-DC converters, motor control, and power supply switching stages.

For engineers reviewing the SIHFU024-GE3 datasheet, SIHFU024-GE3 pinout, SIHFU024-GE3 application, or SIHFU024-GE3 equivalent, this page delivers verified electrical specs, thermal derating behavior, diode recovery characteristics, and real-world mounting guidance for through-hole PCB integration.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining rugged unclamped inductive switching capability. Its 1.5 A continuous diode current rating and 88–180 ns body diode reverse recovery time support moderate-frequency hard-switched topologies.

The device features a dynamic dV/dt rating of 5.5 V/ns and operates across –55 °C to +150 °C junction temperature range. Thermal resistance from junction-to-case is 3.0 °C/W, enabling efficient heat transfer to PCB copper when mounted on 1" FR-4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 24 V and 48 V bus applications
R_DS(on)	0.10 Ω @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 14 A continuous drain current
Q_g	25 nC - Determines gate drive power requirement and switching speed in PWM circuits
E_AS	91 mJ - Supports reliable operation under unclamped inductive load transients without external snubbers
I_D (T_C = 100 °C)	9.0 A - Derated current limit reflecting thermal constraints in high-ambient environments
V_GS(th)	2.0–4.0 V - Threshold range compatible with standard 5 V and 3.3 V logic-level gate drivers
R_thJC	3.0 °C/W - Confirms effective thermal path from die to case for heatsink or copper pour attachment

Pinout & Package

SIHFU024-GE3 is housed in IPAK (TO-251) package-a straight-lead, through-hole variant with isolated drain tab for direct PCB thermal coupling. The package measures 6.22 mm × 6.73 mm × 9.65 mm (L × W × H), with 3.0 mm lead pitch and 1.14–1.52 mm lead length (L3).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤±20 V bias; 5.8 nC gate-source charge enables fast turn-on with low driver current
D	Drain	Main high-side power terminal; electrically connected to exposed metal tab for thermal and current path integrity
S	Source	Reference node for gate drive and current sensing; internal source inductance of 7.5 nH affects high-di/dt switching behavior

Key Features

Feature	Design Value
Dynamic dV/dt rating	5.5 V/ns - Prevents false turn-on during high-speed voltage transients in half-bridge configurations
Fast switching performance	13 ns turn-on delay + 58 ns rise time - Reduces switching losses in 100–500 kHz SMPS designs
Body diode recovery	88–180 ns trr with 0.29–0.64 μC Q_rr - Limits reverse recovery spikes in synchronous rectifier and freewheeling paths
Ruggedized construction	91 mJ E_AS at I_AS = 14 A - Withstands repetitive inductive energy without degradation in motor drive fault conditions
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - Suitable for industrial and consumer end-equipment

Applications

DC-DC Converters	Motor Control
Use Scenario: Step-down regulation in 24 V input industrial power supplies delivering up to 10 A output. IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology operating at 250 kHz. Use Value: Low R_DS(on) minimizes conduction loss; 25 nC Q_g allows clean gate drive with TC4427-class drivers.	Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and regenerative braking. Use Value: 91 mJ avalanche rating absorbs inductive kickback; 14 A continuous ID supports peak stall currents.
Power Supply Protection	LED Driver Circuits
Use Scenario: Electronic fuse in 48 V telecom power distribution unit with overcurrent shutdown. IC Role / Device Role / Timing Role: Current-controlled series pass element responding within 100 ns to fault events. Use Value: Fast dV/dt immunity prevents nuisance tripping; 5.5 V/ns rating ensures stability during line surges.	Use Scenario: Constant-current switch in high-brightness LED string driver for signage lighting. IC Role / Device Role / Timing Role: PWM dimming transistor modulating 1–3 A LED current at 1–5 kHz. Use Value: Low gate charge reduces driver power consumption; 1.5 V V_SD forward drop limits diode conduction loss during off-cycle.

DC-DC Converters

Motor Control

Use Scenario: Step-down regulation in 24 V input industrial power supplies delivering up to 10 A output.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology operating at 250 kHz.

Use Value: Low R_DS(on) minimizes conduction loss; 25 nC Q_g allows clean gate drive with TC4427-class drivers.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and regenerative braking.

Use Value: 91 mJ avalanche rating absorbs inductive kickback; 14 A continuous ID supports peak stall currents.

Power Supply Protection

LED Driver Circuits

Use Scenario: Electronic fuse in 48 V telecom power distribution unit with overcurrent shutdown.

IC Role / Device Role / Timing Role: Current-controlled series pass element responding within 100 ns to fault events.

Use Value: Fast dV/dt immunity prevents nuisance tripping; 5.5 V/ns rating ensures stability during line surges.

Use Scenario: Constant-current switch in high-brightness LED string driver for signage lighting.

IC Role / Device Role / Timing Role: PWM dimming transistor modulating 1–3 A LED current at 1–5 kHz.

Use Value: Low gate charge reduces driver power consumption; 1.5 V V_SD forward drop limits diode conduction loss during off-cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFU024PbF	Same silicon die, identical R_DS(on), Q_g, and avalanche rating; differs only in lead finish (Pb-free vs. Pb-free/halogen-free GE3 marking)	No functional difference; IRFU024PbF lacks halogen-free certification per JEDEC JS709E	Select SIHFU024-GE3 for RoHS-compliant and halogen-free compliance-critical designs.
SiHFR024-GE3	DPAK (TO-252) surface-mount variant with identical electrical specs but different thermal interface and mounting method	Requires rework of PCB layout; better suited for automated assembly and higher power density layouts	Choose SIHFU024-GE3 when through-hole reliability, manual prototyping, or mechanical robustness is prioritized.

Compared with IRFU024PbF, SIHFU024-GE3 adds halogen-free compliance without electrical trade-offs; versus SiHFR024-GE3, it trades surface-mount scalability for through-hole mechanical stability and simplified thermal management on standard FR-4 boards.

Availability

SIHFU024-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and power supply protection circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SIHFU024-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The SIHFU024-GE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for optimal balance of low R_DS(on), fast switching, and rugged avalanche performance in cost-sensitive medium-power applications.

FAQ

What is the maximum continuous drain current for SIHFU024-GE3 at 100 °C case temperature?

The SIHFU024-GE3 supports 9.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the IPAK package under sustained high-temperature operation and must be validated against actual board layout and ambient conditions.

Does SIHFU024-GE3 have a built-in body diode, and what are its key parameters?

Yes, SIHFU024-GE3 integrates a parasitic body diode with 14 A continuous forward current rating, 1.5 V forward voltage at 14 A and 25 °C, and reverse recovery time of 88–180 ns. These values are measured under standardized conditions (I_F = 17 A, dI/dt = 100 A/μs) and directly impact freewheeling efficiency in inductive loads.

What is the gate threshold voltage range for SIHFU024-GE3, and how does it affect drive compatibility?

The SIHFU024-GE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This allows reliable turn-on with 3.3 V or 5 V logic-level drivers while avoiding unintended conduction near ground potential-critical for noise-immune gate control in noisy industrial environments.

Can SIHFU024-GE3 be used in avalanche-mode operation, and what is its rated energy?

Yes, SIHFU024-GE3 is rated for single-pulse avalanche energy (E_AS) of 91 mJ under defined test conditions (I_AS = 14 A, V_DD = 25 V). This capability enables robust operation in inductive switching applications like motor drives where voltage overshoot may occur during turn-off.

What is the thermal resistance from junction to case (R_thJC) for SIHFU024-GE3, and why does it matter?

The SIHFU024-GE3 has a maximum junction-to-case thermal resistance (R_thJC) of 3.0 °C/W. This low value confirms efficient heat transfer from the silicon die to the exposed drain tab, enabling effective thermal management via PCB copper pours or small heatsinks-especially important in sealed or high-ambient-temperature enclosures.

SIHFU024-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251AA

SIHFU024-GE3 FAQ

1.How can I place an order for SIHFU024-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHFU024-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHFU024-GE3 reliable?

The price and inventory of SIHFU024-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFU024-GE3 is usually 5 days.

3.What payment methods are accepted for SIHFU024-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFU024-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHFU024-GE3?

SIHFU024-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHFU024-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHFU024-GE3?

For technical support, including SIHFU024-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFU024-GE3 requirements.

6.How does Aetrix verify that SIHFU024-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHFU024-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFU024-GE3 meets industry standards.

7.What is the process for return or replacement of SIHFU024-GE3?

All SIHFU024-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFU024-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHFU024-GE3 part is unused and in its original packaging.

Return procedure for SIHFU024-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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