My Inquiry
My Account
Vishay Siliconix SIHFU9220-GE3
- Part No.:
- SIHFU9220-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
SIHFU9220-GE3.pdf
- Description:
- MOSFET P-CH 200V 3.6A TO251AA
- Quantity:
- Payment:
- Shipping:
Inventory:2,955
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIHFU9220-GE3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in IPAK (TO-251) package, rated for -200 V drain-source voltage, 1.5 Ω RDS(on) at VGS = -10 V, and -3.6 A continuous drain current at TC = 25 °C. It supports repetitive avalanche operation, fast switching, and through-hole mounting for high-voltage DC-DC converters and industrial motor controls.
For engineers reviewing the SIHFU9220-GE3 datasheet, SIHFU9220-GE3 pinout, SIHFU9220-GE3 application, or SIHFU9220-GE3 equivalent, key selection criteria include its -200 V blocking capability, 1.5 Ω on-resistance, -3.6 A thermal-limited current, avalanche energy rating of 4.2 mJ, and compatibility with standard through-hole PCB assembly processes.
Technical Context
This device uses Vishay's third-generation Power MOSFET technology to achieve low RDS(on) while maintaining ruggedness against unclamped inductive switching. Its gate threshold voltage range (-2.0 V to -4.0 V) ensures reliable turn-on with standard -10 V gate drive and supports logic-level compatibility when paired with appropriate level-shifting circuits.
The SIHFU9220-GE3 integrates a robust body diode with 150–300 ns reverse recovery time and -6.3 V forward voltage at -3.6 A, enabling use in synchronous rectification and freewheeling paths. Thermal resistance from junction-to-case is 3.0 °C/W, supporting high-power dissipation in constrained through-hole layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - Supports high-side switching in 100–170 V DC bus systems without derating. |
| RDS(on) @ VGS = -10 V | 1.5 Ω - Limits conduction loss to ≤ 19.4 W at -3.6 A, enabling thermally manageable operation on FR-4 PCBs. |
| ID (continuous, TC = 25 °C) | -3.6 A - Sustains full-rated load in heatsinked or forced-air-cooled through-hole designs. |
| EAR (repetitive avalanche) | 4.2 mJ - Enables reliable operation under inductive load switching transients up to 3.6 A without external snubbers. |
| Qg (total gate charge) | 20 nC - Requires ≤ 0.2 μC gate drive energy per switch cycle, compatible with standard MOSFET drivers (e.g., TC4420). |
| tr/tf | 27 ns / 19 ns - Supports >1 MHz switching in hard-switched topologies with minimal overlap loss. |
| RthJC | 3.0 °C/W - Allows direct thermal coupling to chassis or metal-core PCBs for efficient heat extraction. |
Pinout & Package
SIHFU9220-GE3 is housed in IPAK (TO-251) package - a through-hole variant with three leads and an exposed drain pad for thermal and electrical connection. The package features gull-wing leads optimized for wave soldering and mechanical stability in high-vibration environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Source (S) | Common return path for load current; connects to system ground or low-side reference in high-side configurations. |
| Lead 2 (center) | Gate (G) | High-impedance control input; requires < ±100 nA leakage budget and 20 nC total charge for full enhancement. |
| Lead 3 (right) | Drain (D) | Main power terminal tied to high-voltage rail; electrically and thermally connected to exposed copper pad on underside. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands ≥106 unclamped inductive switching events at -3.6 A and -200 V without parameter shift. |
| P-channel enhancement mode | Enables high-side switching without bootstrap circuitry; simplifies gate drive in isolated DC-DC and battery disconnect applications. |
| Dynamic dV/dt rating | -5.0 V/ns immunity prevents false turn-on during fast-rising drain transients in noisy industrial environments. |
| Body diode with low Qrr | 0.97–2.0 μC reverse recovery charge minimizes commutation loss in flyback and active clamp topologies. |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E; suitable for automotive and industrial end-equipment requiring green compliance. |
Applications
| Industrial Motor Control | High-Voltage DC-DC Converters |
|---|---|
|
Use Scenario: High-side switch in 3-phase inverter half-bridge legs for 100–150 V DC bus drives. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled high-side power delivery with inherent shoot-through immunity. Use Value: Eliminates need for isolated gate drivers; -200 V rating accommodates bus overvoltage margins and regenerative spikes. |
Use Scenario: Primary-side switch in isolated flyback or forward converter operating from 120 VAC rectified input (~170 VDC). IC Role / Device Role / Timing Role: Main power switch handling high-voltage, medium-current pulses at 50–500 kHz. Use Value: 1.5 Ω RDS(on) and 20 nC Qg balance conduction and switching losses for >85% efficiency at 3–5 W output. |
| Battery Management Systems | Power Supply OR-ing Circuits |
|
Use Scenario: Reverse-polarity and overvoltage protection switch in 48 V telecom or EV auxiliary battery modules. IC Role / Device Role / Timing Role: High-voltage series protection FET placed between battery pack and load interface. Use Value: -200 V VDS withstands load dump transients; repetitive avalanche rating handles fault clearing without failure. |
Use Scenario: Back-to-back P-channel configuration for redundant 24–48 V DC power inputs in industrial PLCs. IC Role / Device Role / Timing Role: Low-loss, bidirectional blocking element enabling seamless source switchover. Use Value: Symmetrical RDS(on) and low gate charge allow fast, low-loss OR-ing with <100 mV forward drop at rated current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFU9220PbF | Same die, identical RDS(on), VDS, and Qg; differs only in marking and tape/reel packaging (no GE3 suffix). | No functional difference; validated for same through-hole mounting and thermal profiles. | Select IRFU9220PbF when legacy procurement channels or non-GE3 traceability requirements apply. |
| SiHFR9220-GE3 | DPAK (TO-252) surface-mount variant; identical electrical specs but 3.0 °C/W RthJC vs. 3.0 °C/W (same), yet lower RthJA (110 vs. 50 °C/W) due to PCB thermal spreading. | Requires rework of footprint and solder process; unsuitable for through-hole-only production lines. | Choose SiHFR9220-GE3 only when board space constraints mandate SMT and thermal management leverages large copper pour. |
Compared with SIHFU9220-GE3, IRFU9220PbF offers identical performance in through-hole systems with no layout change, while SiHFR9220-GE3 trades mechanical mounting flexibility for higher-density placement-making SIHFU9220-GE3 optimal for legacy or mixed-technology assemblies where leaded reliability and serviceability are prioritized.
Availability
SIHFU9220-GE3 is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, and battery management systems requiring stable component supply across multi-year production cycles.
Supply support for SIHFU9220-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The SIHFU9220-GE3 belongs to Vishay's high-voltage P-channel Power MOSFET family, engineered for ruggedness in unclamped inductive switching and designed specifically for through-hole high-side switching in harsh-environment power systems.
FAQ
What is the maximum continuous drain current for SIHFU9220-GE3 at 100 °C case temperature?
The SIHFU9220-GE3 supports -2.3 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W maximum power dissipation at 25 °C. This value reflects thermal limits under sustained conduction, not transient avalanche conditions. Designers must verify heatsinking to maintain TC ≤ 100 °C for full -2.3 A operation. The SIHFU9220-GE3 datasheet specifies this rating in Absolute Maximum Ratings Table.
Does SIHFU9220-GE3 require a negative gate drive voltage?
Yes, SIHFU9220-GE3 is a P-channel MOSFET and requires a gate voltage more negative than the source to turn on. Full enhancement occurs at VGS = -10 V, with threshold range from -2.0 V to -4.0 V. Driving the gate to 0 V (relative to system ground) turns the device off when source is biased above ground. The SIHFU9220-GE3 gate-source leakage remains ≤ ±100 nA at ±20 V, ensuring stable biasing with high-impedance driver networks.
Can SIHFU9220-GE3 be used in avalanche mode repeatedly?
Yes, SIHFU9220-GE3 is explicitly rated for repetitive avalanche operation with EAR = 4.2 mJ and IAR = -3.6 A under specified test conditions (VDD = -50 V, L = 35 mH, Rg = 25 Ω). This capability enables robustness in inductive load switching without external clamping. The SIHFU9220-GE3 datasheet confirms repetitive rating in Absolute Maximum Ratings and Figure 12c, with pulse width limited by junction temperature.
What is the thermal resistance from junction to ambient for SIHFU9220-GE3 in typical PCB mount?
When mounted on a 1" square FR-4 PCB, SIHFU9220-GE3 exhibits RthJA = 50 °C/W. This value assumes standard JEDEC test conditions and defines the worst-case thermal path without heatsinking. For improved performance, the exposed drain pad should be connected to a large copper area. The SIHFU9220-GE3 Thermal Resistance Ratings table lists this value explicitly, distinguishing it from the 110 °C/W rating for free-air operation.
Is SIHFU9220-GE3 compatible with lead-free wave soldering processes?
Yes, SIHFU9220-GE3 is lead (Pb)-free and halogen-free, qualified for peak wave solder temperatures up to 260 °C for 10 seconds per JEDEC J-STD-020. Its IPAK (TO-251) package is designed for vapor phase, infrared, and wave soldering. The SIHFU9220-GE3 packaging documentation confirms compliance with RoHS Directive 2011/65/EU and JEDEC JS709E, making it suitable for modern lead-free manufacturing lines.
SIHFU9220-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251AA
SIHFU9220-GE3 FAQ
1.How can I place an order for SIHFU9220-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFU9220-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFU9220-GE3 reliable?
The price and inventory of SIHFU9220-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFU9220-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFU9220-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFU9220-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFU9220-GE3?
SIHFU9220-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFU9220-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFU9220-GE3?
For technical support, including SIHFU9220-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFU9220-GE3 requirements.
6.How does Aetrix verify that SIHFU9220-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFU9220-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFU9220-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFU9220-GE3?
All SIHFU9220-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFU9220-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFU9220-GE3 part is unused and in its original packaging.
Return procedure for SIHFU9220-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIHFU9220-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
