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Vishay Siliconix SIHFZ48RS-GE3
- Part No.:
- SIHFZ48RS-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SIHFZ48RS-GE3.pdf
- Description:
- MOSFET N-CH 60V 50A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,857
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Product details
Overview
SIHFZ48RS-GE3 from Vishay Siliconix is a 60 V, 50 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 175 °C maximum junction temperature, 0.018 Ω RDS(on) at VGS = 10 V, and full avalanche rating - designed for high-current linear and audio amplifier output stages.
For engineers reviewing the SIHFZ48RS-GE3 datasheet, SIHFZ48RS-GE3 pinout, SIHFZ48RS-GE3 application, or SIHFZ48RS-GE3 equivalent, key selection criteria include its low on-resistance, fast switching (250 ns rise/fall), rugged unclamped inductive switching capability (100 mJ EAS), and drop-in compatibility with legacy IRFZ48/SiHFZ48 in thermal-limited linear-mode designs.
Technical Context
This device employs Vishay's advanced silicon process to achieve ultra-low RDS(on) per die area while maintaining robust safe operating area (SOA) up to 175 °C. Its body diode exhibits 120–180 ns reverse recovery time and 0.50–0.80 μC Qrr, enabling reliable operation in hard-switched inductive loads.
The D2PAK package delivers 0.8 °C/W junction-to-case thermal resistance and supports 190 W continuous power dissipation at TC = 25 °C. Internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) are specified to aid layout-aware switching loss estimation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; defines upper limit for DC bus or rail voltage in motor drive or SMPS primary-side switches. |
| RDS(on) | 0.018 Ω @ VGS = 10 V - Enables ≤0.8 W conduction loss at 50 A; critical for thermal management in linear amplifiers and high-current DC-DC phases. |
| Qg | 110 nC - Total gate charge determines driver strength requirement; mandates ≥2 A peak gate current for <100 ns switching transitions. |
| EAS | 100 mJ - Single-pulse avalanche energy rating allows safe operation during inductive turn-off transients without external snubbers. |
| TJ(max) | 175 °C - Extended junction temperature enables sustained operation in sealed enclosures or high-ambient industrial environments. |
| dV/dt Rating | 4.5 V/ns - Confirmed peak diode recovery dV/dt capability; ensures immunity to parasitic turn-on in high-speed half-bridge configurations. |
| ID(cont) | 50 A @ TC = 25 °C - Continuous drain current limited by package thermal resistance (RthJC = 0.8 °C/W), not die capability (72 A). |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated thermal pad; 3-pin configuration optimized for high-power density PCB layouts and heatsink mounting via backside thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; ±20 V absolute max rating prevents oxide damage. |
| Pin 2 (D) | Drain | Main current-carrying terminal connected to exposed copper tab; electrically tied to heatsink in standard mounting. |
| Pin 3 (S) | Source | Power return path; internal bond wires define LS = 7.5 nH - impacts gate drive loop inductance and shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | 100 mJ single-pulse EAS validated per JEDEC JESD24-11 - eliminates need for external clamping in relay drivers or solenoid controls. |
| Linear-mode optimized | Drop-in replacement for IRFZ48/SiHFZ48 in Class-AB audio outputs; stable SOA up to 100 V × 5 A with 175 °C TJ limit. |
| Low RDS(on) / die area | 0.018 Ω achieved via advanced trench process - reduces conduction loss and thermal footprint vs. planar equivalents. |
| Fast switching | 250 ns rise/fall times with 9.1 Ω gate resistor - enables >100 kHz PWM in synchronous rectifiers without excessive switching loss. |
| RoHS-compliant & halogen-free | SiHFZ48RS-GE3 suffix denotes lead-free (Pb-free) and halogen-free construction per Vishay Doc. #99912 - meets IPC/JEDEC J-STD-609B Class 1. |
Applications
| High-Fidelity Audio Amplifiers | DC Motor Drives |
|---|---|
Use Scenario: Output stage in Class-AB solid-state power amplifiers delivering 50–200 W into 4–8 Ω loads. IC Role / Device Role / Timing Role: Linear-mode power switch handling continuous bidirectional current with precise bias control. Use Value: Low RDS(on) minimizes thermal drift and distortion; 175 °C TJ rating sustains reliability during sustained clipping events. |
Use Scenario: H-bridge or half-bridge driver for brushed DC motors in industrial automation (e.g., conveyor positioning, valve actuation). IC Role / Device Role / Timing Role: High-side/low-side switching element controlling direction and speed via PWM. Use Value: Fast switching (250 ns) enables efficient 20–50 kHz PWM; avalanche rating absorbs inductive kickback without snubbers. |
| Switched-Mode Power Supplies | Uninterruptible Power Systems |
Use Scenario: Primary-side switch in 300–500 W offline flyback or forward converters. IC Role / Device Role / Timing Role: High-voltage, high-current switching transistor in hard-switched topologies. Use Value: 60 V VDS supports 48 V input rails with margin; 110 nC Qg balances drive loss and switching speed. |
Use Scenario: Battery disconnect and inverter output stage in 48 V UPS systems with backup runtime >5 min. IC Role / Device Role / Timing Role: Bidirectional power switch managing battery charging and AC inversion paths. Use Value: Body diode VSD = 2.0 V enables low-loss freewheeling; 290 A pulsed ID capability handles surge loads during transfer. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ48RSPbF | Same die and specs, but Pb-containing terminations; RoHS non-compliant; identical RDS(on), Qg, and SOA. | Restricted to legacy industrial equipment where Pb exemption applies; not suitable for new EU/China RoHS designs. | Select IRFZ48RSPbF only if Pb-based soldering or regulatory exemptions are required; otherwise prefer SiHFZ48RS-GE3. |
| STP55NF06L | 60 V, 55 A, 0.014 Ω RDS(on), but logic-level (2.5 V) gate; higher Ciss (3200 pF); no published EAS rating. | Better suited for microcontroller-driven low-voltage gate drive; lacks validated avalanche ruggedness for linear/audio use. | Choose STP55NF06L when gate drive voltage is ≤5 V and avalanche stress is absent; avoid in audio output or unclamped inductive loads. |
Compared with IRFZ48RSPbF, SIHFZ48RS-GE3 offers RoHS/halogen-free compliance without performance trade-offs; versus STP55NF06L, SIHFZ48RS-GE3 provides superior avalanche immunity and proven linear-mode stability at the cost of higher gate drive voltage requirement.
Availability
SIHFZ48RS-GE3 is available at Aetrix Electronics and suitable for high-current audio amplifiers, industrial motor drives, and 48 V switched-mode power supplies requiring stable component supply and long-term manufacturing continuity.
Supply support for SIHFZ48RS-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The SIHFZ48RS-GE3 belongs to Vishay's high-current, high-temperature power MOSFET product line, engineered specifically for linear-mode audio output stages and industrial switching applications demanding avalanche tolerance and thermal resilience.
FAQ
What is the maximum continuous drain current rating for SIHFZ48RS-GE3 at 100 °C case temperature?
The SIHFZ48RS-GE3 maintains a continuous drain current rating of 50 A at TC = 100 °C, as confirmed in the Absolute Maximum Ratings table. This reflects package-limited current handling rather than die capability, which reaches 72 A under ideal thermal conditions. Derating beyond 100 °C follows the 1.3 W/°C linear factor.
Does SIHFZ48RS-GE3 support linear-mode (class-A/AB) operation, and what design considerations apply?
Yes, SIHFZ48RS-GE3 is explicitly qualified for linear-mode operation, with datasheet notes confirming it as a drop-in replacement for IRFZ48 and SiHFZ48 in audio applications. Key considerations include ensuring SOA compliance (Fig. 7), limiting power dissipation using RthJC = 0.8 °C/W, and maintaining TJ ≤ 175 °C via adequate heatsinking and bias control.
What is the gate threshold voltage range for SIHFZ48RS-GE3, and how does it affect drive circuit design?
The SIHFZ48RS-GE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This standard-level gate requires ≥10 V for full enhancement (RDS(on) = 0.018 Ω). Drive circuits must deliver clean, low-impedance 10–15 V gate swings with sufficient peak current to charge 110 nC Qg rapidly.
Is SIHFZ48RS-GE3 pin-compatible with IRFZ48RSPbF, and can they be interchanged on the same PCB?
Yes, SIHFZ48RS-GE3 and IRFZ48RSPbF share identical D2PAK (TO-263) package dimensions, pinout, and thermal pad layout per Vishay package drawings 91364 and 91367. They are mechanically and electrically interchangeable on the same PCB, differing only in termination composition (Pb-free vs. Pb-containing) and RoHS status.
What is the typical body diode reverse recovery charge (Qrr) for SIHFZ48RS-GE3, and why does it matter in bridge configurations?
The SIHFZ48RS-GE3 exhibits a typical Qrr of 0.65 μC (range 0.50–0.80 μC) at TJ = 25 °C, IF = 72 A, and dI/dt = 100 A/μs. In half-bridge or full-bridge topologies, this value directly impacts commutation losses and EMI generation during freewheeling; lower Qrr reduces voltage overshoot and gate ringing during diode turn-off.
SIHFZ48RS-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SIHFZ48RS-GE3 FAQ
1.How can I place an order for SIHFZ48RS-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHFZ48RS-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHFZ48RS-GE3 reliable?
The price and inventory of SIHFZ48RS-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHFZ48RS-GE3 is usually 5 days.
3.What payment methods are accepted for SIHFZ48RS-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHFZ48RS-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHFZ48RS-GE3?
SIHFZ48RS-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHFZ48RS-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHFZ48RS-GE3?
For technical support, including SIHFZ48RS-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHFZ48RS-GE3 requirements.
6.How does Aetrix verify that SIHFZ48RS-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHFZ48RS-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHFZ48RS-GE3 meets industry standards.
7.What is the process for return or replacement of SIHFZ48RS-GE3?
All SIHFZ48RS-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHFZ48RS-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHFZ48RS-GE3 part is unused and in its original packaging.
Return procedure for SIHFZ48RS-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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